Abstract: When image reconstruction by retrospective scanning is performed, the cache hit ratio is lowered due to transfer of not-used projection data to a cache memory. Accordingly, a processor generates rearranged projection data in which a first plurality of segments are extracted from original projection data written in a memory for saving original projection data 205, and stores the generated rearranged projection data into a main memory 212. The processor generates second view weights in which first view weights are made to correspond with the rearranged projection data (209). The rearranged projection data stored in the main memory 212 is previously transferred to the cache memory 213. The processor generates first tomographic image data with the rearranged projection data and the second view weights (214).

Abstract: A magnetoresistive effect element includes a first ferromagnetic layer and a tunnel barrier layer. The tunnel barrier layer has a main body region and a first interface region. The main body region has an oxide material of a first spinel structure represented by a general formula LM2O4. The first interface region has at least one element X selected from a group consisting of elements having a valence of 2 and elements having a valence of 3 excluding Al and has an oxide material of a second spinel structure represented by a general formula DG2O4(D represents one or more kinds of elements including Mg or the element X, and G represents one or more kinds of elements including Al or the element X). A content of the element X contained in the first interface region is larger than that of the element X contained in the main body region.

Abstract: A group robot and a method for controlling a collective movement of a group robot that realize a combination of autonomous distributed control and centralized control according to the environment are provided.

Abstract: A magnetoresistive effect device includes an input port, an input-side signal line, an MR unit including a magnetoresistive effect element and a magnetic-field generating signal line, and an output unit including a magnetoresistive effect element, an output-side signal line, and an output port. The magnetoresistive effect device further includes a DC application terminal. The magnetoresistive effect element is connected to the output port via the output-side signal line in the output unit. The input-side signal line is arranged so that a high frequency magnetic field generated from the input-side signal line is applied to the magnetoresistive effect element in the MR unit. In the MR unit, the magnetoresistive effect element is connected to the magnetic-field generating signal line. The magnetic-field generating signal line is arranged so that a high-frequency magnetic field generated from magnetic-field generating signal line is applied to the magnetoresistive effect element in the output unit.

Abstract: Provided is a magnetoresistance effect device comprising a magnetoresistance effect element including a first ferromagnetic layer, a second ferromagnetic layer and a spacer layer, and a high-frequency signal line. The high-frequency signal line includes an overlapping part disposed at a position overlapping the magnetoresistance effect element and a non-overlapping part disposed at a position not overlapping the magnetoresistance effect element in a plan view from a stacking direction. At least a part of the non-overlapping part is disposed below the overlapping part in the stacking direction, assuming that the overlapping part is above the magnetoresistance effect element in the stacking direction.

Abstract: Provided is a cell packaging material having a high insulating performance and durability. A cell packaging material comprising a layered body provided with at least a substrate layer, a metal layer, an adhesive layer, and a heat-fusible resin layer in the stated order. The adhesive layer has a resin composition that contains an acid-modified polyolefin and an epoxy resin. In probe displacement amount measurements involving the use of a thermal mechanical analyzer, when a probe is placed on the surface of the adhesive layer at an end part of the cell packaging material and the probe is heated from 40° C. to 220° C., the position of the probe does not drop in relation to the initial value.

Abstract: A magnetoresistance effect device includes a first port, a second port, a first circuit unit and a second circuit unit which are connected in series between the first port and the second port, a shared reference electric potential terminal or a first reference electric potential terminal and a second reference electric potential terminal, and a shared DC application terminal or a first DC application terminal and a second DC application terminal, wherein the first circuit unit and the second circuit unit include a magnetoresistance effect element and a conductor connected to one end thereof, a first end portion of the conductor is connected to a high-frequency current input side, and a second end portion of the first conductor is connected to the shared reference electric potential terminal, the first reference electric potential terminal or the second reference electric potential terminal.

Abstract: A thermal transfer sheet includes a support film and a transfer layer provided on one surface of the support film. The transfer layer at least includes a decorative layer and an adhesive layer provided on an obverse side of the decorative layer. The adhesive layer includes a first adhesive layer and a second adhesive layer laminated on the first adhesive layer. The first adhesive layer is positioned on an obverse side of the second adhesive layer. The first adhesive layer is made of a first resin having thermal plasticity and has a lower viscosity than the second adhesive layer. The second adhesive layer is made of a second resin having thermal plasticity and has a higher glass-transition point than the first adhesive layer. Monomer units constituting the first resin and monomer units constituting the second resin are partly or entirely identical.

Abstract: A battery packaging material includes a laminate that includes at least a base material layer, a metal layer, an insulating layer, and a sealant layer laminated in this order. The insulating layer is formed of a resin composition containing a modified polyolefin resin modified with an unsaturated carboxylic acid or acid anhydride thereof and has a hardness, when measured by using a nanoindenter and pressing an indenter 5 ?m into the insulating layer from a cross-section of the laminate in the laminating direction thereof, that ranges from 10 MPa to 300 MPa. In the sealant layer, an elastic modulus, when measured by using a nanoindenter and pressing an indenter 5 ?m into the sealant layer from a cross-section of the laminate in the laminating direction thereof, ranges from 100 MPa to 1000 MPa.

Abstract: A magnetoresistance effect device includes first and second ports, first and second circuit units, and reference potential and DC applying terminals. The first and second circuit units respectively include first and second magnetoresistance effect elements and first and second conductors. In the second conductor, the positional relationship between first and second end faces respectively on the first and opposite conductor sides in the first magnetoresistance effect element with respect to a flowing direction of a direct current flowing inside the first magnetoresistance effect element and the positional relationship between first and second end faces respectively on the second and opposite conductor sides in the second magnetoresistance effect element with respect to a flowing direction of a direct current flowing in the second magnetoresistance effect element are opposite each other.

Abstract: A magnetoresistive effect element includes a first ferromagnetic layer and a tunnel barrier layer. The tunnel barrier layer has a main body region and a first interface region. The main body region has an oxide material of a first spinel structure represented by a general formula LM2O4. The first interface region has at least one element X selected from a group consisting of elements having a valence of 2 and elements having a valence of 3 excluding Al and has an oxide material of a second spinel structure represented by a general formula DG2O4(D represents one or more kinds of elements including Mg or the element X, and G represents one or more kinds of elements including Al or the element X). A content of the element X contained in the first interface region is larger than that of the element X contained in the main body region.

Abstract: When image reconstruction by retrospective scanning is performed, the cache hit ratio is lowered due to transfer of not-used projection data to a cache memory. Accordingly, a processor generates rearranged projection data in which a first plurality of segments are extracted from original projection data written in a memory for saving original projection data 205, and stores the generated rearranged projection data into a main memory 212. The processor generates second view weights in which first view weights are made to correspond with the rearranged projection data (209). The rearranged projection data stored in the main memory 212 is previously transferred to the cache memory 213. The processor generates first tomographic image data with the rearranged projection data and the second view weights (214).

Abstract: The magnetoresistance effect device includes first and second ports, a first circuit unit and a second circuit unit connected between the first port and the second port, a shared reference electric potential terminal or a first reference electric potential terminal and a second reference electric potential terminal, and a shared DC application terminal or a first DC application terminal and a second DC application terminal, the first circuit unit includes a first magnetoresistance effect element, the second circuit unit includes a second magnetoresistance effect element and a first conductor separated from the second magnetoresistance effect element with an insulating body therebetween and a first end portion of the first conductor is connected to an input side of high frequency current such that high frequency magnetic field generated by the high frequency current flowing through the first conductor is applied to the magnetization free layer of the second magnetoresistance effect element.

Abstract: A magnetoresistance effect device includes a first port, a second port, a magnetoresistance effect element, a first signal line that is connected to the first port and applies a high-frequency magnetic field to the magnetoresistance effect element, a second signal line that connects the second port to the magnetoresistance effect element, and a direct current application terminal that is connected to a power source configured to apply a direct current or a direct voltage in a lamination direction of the magnetoresistance effect element. The first signal line includes a plurality of high-frequency magnetic field application areas capable of applying a high-frequency magnetic field to the magnetoresistance effect element, and the plurality of high-frequency magnetic field application areas in the first signal line are disposed at positions at which high-frequency magnetic fields generated in the high-frequency magnetic field application areas reinforce each other in the magnetoresistance effect element.

Abstract: A magnetoresistance effect device includes: a first magnetoresistance effect element including a first ferromagnetic layer, a second ferromagnetic layer, and a first spacer layer, a metal layer, a first electrode, an input terminal, an output terminal, and a reference potential terminal, wherein the first ferromagnetic layer, the first spacer layer, the second ferromagnetic layer, and the first electrode are disposed in this order, the second ferromagnetic layer is in electrical contact with the first electrode, which is connected to the output terminal configured to output a high-frequency signal, the metal layer is connected to the input and reference potential terminals so that a high-frequency signal flowing from the input terminal to the metal layer flows to the reference potential terminal, which is in electrical contact with the first ferromagnetic layer, and the first magnetoresistance effect element has an application terminal configured to apply a DC current or a DC voltage.

Abstract: An electrode for biological information measurement is provided as an electrode for measuring biological information, such as an electrocardiogram, a pulse wave, or an electroencephalogram. The biological information can be stably obtained with the electrode without using a flowable electrolyte. The electrode for biological information measurement includes an electrode, at least a portion of which is made of a carbon material, and a terminal electrically connected to the electrode, wherein at least part of a surface of the portion of the electrode made of the carbon material can come into contact with a biological body, and part of the surface is modified with a cationic functional group.

Abstract: A vital sign information measuring electrode includes a substrate and an electrode layer disposed on a surface of the substrate, a part of the electrode layer serving as a contact portion that can come into contact with a living body. The contact portion of the electrode layer has a dispersion structure in which silver chloride and silver or a silver alloy are dispersed in a synthetic resin. In the contact portion of the electrode layer, the content of silver chloride on a surface side on which the contact portion comes into contact with the living body is higher than the content of silver chloride on an inner side.

Abstract: Arrangement to reduce a time until a first image is displayed, to reduce a standby time until the next imaging is started, and to uniformize a time interval in a case where a plurality of images are displayed. An X-ray CT device detects a dose of an X-ray, a storage unit that preserves image data, a calculation unit that generates, as the image data, projection data on the basis of the X-ray data in parallel to an imaging process in the scanner, preserves the projection data, notifies a display control unit of preservation information, performs a reconstruction process, a display unit that displays an image generated per the X-ray data, and the display control unit that controls a display timing of a reconstructed image to be displayed on the display unit on the basis of the preservation information and the reconstruction information.

Abstract: A magnetoresistive effect device including a magnetoresistive effect element with which a high-frequency filter can be realized is provided. Magnetoresistive effect device includes: at least one magnetoresistive effect element including a magnetization fixed layer, spacer layer, and magnetization free layer in which magnetization direction is changeable; first and second port; signal line; and direct-current input terminal. First and second ports are connected to each other via signal line. Magnetoresistive effect element is connected to signal line and is to be connected to ground in parallel to second port. Direct-current input terminal is connected to signal line. A closed circuit including magnetoresistive effect element, signal line, ground, and direct-current input terminal is to be formed.

Abstract: A group robot and a method for controlling a collective movement of a group robot that realize a combination of autonomous distributed control and centralized control according to the environment are provided.