Abstract: A substrate processing method for performing a predetermined process on a substrate includes performing, a plurality of times, a cycle including (a) supplying a first processing gas into a processing container to which an exhaust pipe is connected and which accommodates the substrate and (b) supplying a second processing gas into the processing container, wherein at least one of (a) and (b) includes (c) introducing a ballast gas into the exhaust pipe and forming plasma of the processing gas supplied into the processing container.

Abstract: Provided are a substrate processing method and a substrate processing apparatus for forming a low-resistance metal-containing nitride film. The substrate processing method includes: a step of providing a substrate in a processing container; a step of forming a metal-containing nitride film on the substrate by repeating supplying an organic metal-containing gas and a nitrogen-containing gas alternately for a first predetermined number of cycles; a step of modifying the metal-containing nitride film by generating plasma in the processing container; and a step of repeating the step of forming the metal-containing nitride film and the step of modifying the metal-containing nitride film for a second predetermined number of cycles.

Abstract: A semiconductor device includes: a first conductivity type semiconductor of a nanostructure; a first electrode that is in ohmic junction with an end part of the first conductivity type semiconductor; a second electrode that is coupled to the first electrode and is provided over a side surface of the first conductivity type semiconductor; and a depletion constituent that controls expansion of a depletion layer inside the nanostructure, wherein the depletion layer is expanded inside the first conductivity type semiconductor by the depletion constituent in a direction intersecting a movement direction of a carrier.

Abstract: A semiconductor device includes: a semiconductor layer of a first conductivity type formed over a substrate; a plurality of semiconductor nanowires formed of a compound semiconductor of the first conductivity type extending above the semiconductor layer; and a gate electrode formed around the semiconductor nanowires in a connection portion between the semiconductor layer and the semiconductor nanowires.

Abstract: Provided is a blow molding machine including an injection molding unit and a blow molding unit, wherein the injection molding unit includes a preform mold and an injection device configured to supply resin to the preform mold, wherein the injection device is fixed to a support plate, and wherein the support plate includes a position adjustment mechanism capable of adjusting a position of the injection device in an upper and lower direction with respect to the preform mold.

Abstract: There is provided a shoe insole that facilitates a movement to grasp the ground with toes while ensuring stability and motility. A shoe insole 1 includes, in order to maintain an inner longitudinal arch 121, an outer longitudinal arch 122, and a transverse arch 120 of a foot, a calcaneal anterior-part support protrusion 90 that abuts a calcaneal anterior part 12A of the foot, and a toe ball support part 100 that supports a thenar 26A and a hypothenar 34A of the foot, with the calcaneal anterior-part support protrusion 90 maintaining the inner longitudinal arch 121, the outer longitudinal arch 122, and the transverse arch 120, wherein an insole front part 110 thinner than the toe ball support part 100 is provided in front of the toe ball support part 100.

Abstract: Provided is a blow molding machine including an injection molding unit and a blow molding unit, wherein the injection molding unit includes a preform mold and an injection device configured to supply resin to the preform mold, wherein the injection device is fixed to a support plate, and wherein the support plate includes a position adjustment mechanism capable of adjusting a position of the injection device in an upper and lower direction with respect to the preform mold.

Abstract: A semiconductor device includes: a first conductivity type semiconductor of a nanostructure; a first electrode that is in ohmic junction with an end part of the first conductivity type semiconductor; a second electrode that is coupled to the first electrode and is provided over a side surface of the first conductivity type semiconductor; and a depletion constituent that controls expansion of a depletion layer inside the nanostructure, wherein the depletion layer is expanded inside the first conductivity type semiconductor by the depletion constituent in a direction intersecting a movement direction of a carrier.

Abstract: A substrate processing method in substrate processing apparatus comprises repeating cycle including: supplying source gas into process container causing the source gas to be adsorbed to substrate; exhausting excess source gas from the process container; supplying reaction gas into the process container causing the reaction gas to react with the source gas; and exhausting excess reaction gas, wherein at least one of a gap width between placement stage and member forming processing space between the member and the stage and degree of opening of pressure adjustment valve in at least one of the supplying the source gas and the supplying the reaction gas is smaller than at least one of a gap width between the stage and the member and the degree of opening of the pressure adjustment valve in at least one of the exhausting the excess source gas and the exhausting the excess reaction gas, respectively.

Abstract: A step of constantly supplying first and second carrier gases into a processing container having a substrate therein through first and second carrier gas flow paths, respectively, and supplying a source gas into the processing container through a source gas flow path, a step of purging the source gas by supplying a purge gas into the processing container through a purge gas flow path provided separately from the carrier gas, a step of supplying a reactant gas into the processing container through a reactant gas flow path, and a step of purging the reactant gas by supplying a purge gas into the processing container through the purge gas flow path are performed in a predetermined cycle. An additive gas having a predetermined function is supplied as at least a part of the purge gas in at least one of the purging steps.

Abstract: A semiconductor device includes: a semiconductor layer of a first conductivity type formed over a substrate; a plurality of semiconductor nanowires formed of a compound semiconductor of the first conductivity type extending above the semiconductor layer; and a gate electrode formed around the semiconductor nanowires in a connection portion between the semiconductor layer and the semiconductor nanowires.

Abstract: A semiconductor device includes a semiconductor substrate composed of a compound semiconductor, a first semiconductor region disposed over a surface of the semiconductor substrate so as to extend upward from the surface of the semiconductor substrate, the first semiconductor region including a semiconductor nanowire composed of a compound semiconductor, a second semiconductor region disposed over the periphery of a side surface of the first semiconductor region, a gate electrode disposed over the periphery of the second semiconductor region, a drain electrode coupled to one end of the first semiconductor region, and a source electrode coupled to another end of the first semiconductor region, the first and second semiconductor regions being composed of different semiconductor materials.

Abstract: A game system configured to change game control and change control of perceived vibration to be fed back to a player via a first controller and a second controller, between a mounted state in which the first controller and the second controller are mounted to a gaming console and an unmounted state in which the first controller and the second controller are detached from the gaming console.

Abstract: A high-pressure hydrogen filling system with expansion turbine having a simple configuration, requiring less maintenance and control duties, capable of being operated at low costs including electric power consumption cost, and allowing the use of general-purpose materials for composing the components of a hydrogen gas supply unit, a cold accumulator is installed at the outlet of an expansion turbine in a system performing hydrogen gas enthalpy drop when pressurizing and filling highly-pressurized and accumulated hydrogen gas into a tank.

Abstract: A film forming apparatus includes a mounting table mounting a substrate thereon, a gas diffusion unit above the mounting table, gas dispersion units above the gas diffusion unit, and an evacuation unit to evacuate a processing chamber. The gas diffusion unit has gas injection holes for injecting a gas in a shower shape. Outermost gas injection holes are arranged outward of an outer circumference of the substrate when seen from the top. The gas dispersion units face the gas diffusion unit through a diffusion space therebetween. Each of the gas dispersion units has gas discharge holes formed along a circumferential direction thereof to disperse a gas horizontally into the diffusion space. The gas dispersion units include at least three first gas dispersion units along a first circle, and at least three second gas dispersion units along a second circle concentrically disposed at an outer side of the first circle.

Abstract: A method of forming a TiSiN film having a desired film characteristic includes: forming a TiN film by executing an operation of supplying, into a process container in which a substrate is accommodated, a Ti-containing gas and a nitrogen-containing gas in this order a number of times X, X being an integer of 1 or more; and forming a SiN film by executing an operation of supplying, into the process container, a Si-containing gas and a nitrogen-containing gas in this order a number of times Y, Y being an integer of 1 or more, wherein forming a TiN film and forming a SiN film are executed in this order a number of times Z, Z being an integer of 1 or more, and wherein, in forming a SiN film, a flow rate of the Si-containing gas is controlled to be a flow rate determined according to the desired film characteristic.

Abstract: A film-forming method for forming a metal nitride film on a substrate includes: forming the metal nitride film on the substrate by repeating a cycle a predetermined number of times, the cycle including: a first process of supplying a metal-containing gas into a process container configured to accommodate the substrate therein; a second process of supplying a purge gas into the process container; a third process of supplying a nitrogen-containing gas into the process container; and a fourth process of supplying the purge gas into the process container, wherein the fourth process includes: a first step of supplying a first purge gas having a first flow rate equal to or larger than a flow rate of the metal-containing gas of the first process; and a second step of supplying the first purge gas having a second flow rate smaller than the first flow rate.

Abstract: A high-pressure hydrogen filling system with expansion turbine having a simple configuration, requiring less maintenance and control duties, capable of being operated at low costs including electric power consumption cost, and allowing the use of general-purpose materials for composing the components of a hydrogen gas supply unit, a cold accumulator is installed at the outlet of an expansion turbine in a system performing hydrogen gas enthalpy drop when pressurizing and filling highly-pressurized and accumulated hydrogen gas into a tank.

Abstract: A semiconductor device includes a semiconductor substrate composed of a compound semiconductor, a first semiconductor region disposed over a surface of the semiconductor substrate so as to extend upward from the surface of the semiconductor substrate, the first semiconductor region including a semiconductor nanowire composed of a compound semiconductor, a second semiconductor region disposed over the periphery of a side surface of the first semiconductor region, a gate electrode disposed over the periphery of the second semiconductor region, a drain electrode coupled to one end of the first semiconductor region, and a source electrode coupled to another end of the first semiconductor region, the first and second semiconductor regions being composed of different semiconductor materials.

Abstract: A metal-containing film can be formed with high continuity with respect to a base when forming the metal-containing film on the base by CVD or ALD. A film forming method of forming, by ALD or CVD, a Ti-containing film on a base film of a processing target object having a SiO2 film as the base film includes performing a surface processing of accelerating formation of a silanol group on a surface of the SiO2 film by bringing a fluid containing O and H into contact with the surface of the SiO2 film; and performing a film forming processing of forming the Ti-containing film on the SiO2 film, on which the surface processing is performed, by the ALD or the CVD with a Ti source gas which reacts with the silanol group.