Abstract: To provide a RF generating apparatus that enables apparatus size to be decreased and the cost reduced thereby while also improving power efficiency by performing a stable matching operation, and to provide a plasma treatment apparatus using said apparatus. This RF generating apparatus comprises a plurality of RF generators and matching units, the matching units being provided with only variable-capacity capacitors connected in parallel, thereby reducing the number of elements in terms of the variable-capacity capacitors. A matching calculation section for the RF generators determines, on the basis of traveling waves and reflection waves detected by a detection circuit, the capacity values of the variable-capacity capacitors for the matching units, while adjusting and determining the oscillation frequencies for oscillation circuits in the RF generators so as to decrease the level of the reflection waves. The plasma treatment apparatus uses this RF generating apparatus.

Abstract: According to one aspect of the technique described herein, there is provided a technique including: a reaction tube defining a processing chamber wherein a substrate is processed; an electrode provided at an outer circumferential surface of the reaction tube and configured to generate plasma in the process chamber; an electrode fixing part configured to fix the electrode thereto; a heater provided at an outer circumferential surface of the electrode fixing part and configured to heat an inside of the reaction tube; and a spacer configured to provide a predetermined gap between the electrode and a surface of the electrode fixing part.

Abstract: There is provided a technique that includes: a reaction tube configured to process a plurality of substrates; a substrate support configured to support the plurality of substrates stacked in multiple stages; a buffer chamber that is at least located at a position of height from a lowermost substrate to an uppermost substrate supported by the substrate support, and is installed along an inner wall of the reaction tube; and an electrode for plasma generation that is inserted from a lower portion of the buffer chamber into an upper portion of the buffer chamber through a side surface of the reaction tube, the electrode being configured to activate the processing gas by plasma inside the buffer chamber thereby applying high-frequency power to the electrode by a power supply.

Abstract: A substrate processing apparatus includes: a reaction tube with a process chamber defined therein, the process chamber being configured to process a substrate; a heating device configured to heat the process chamber; a gas supply part configured to supply a process gas used in processing the substrate; and a plasma generating part including an electrode composed of a first electrode portion connected to a high frequency power supply and a second electrode portion grounded to the earth, which are installed to surround the entire circumference of an outer wall of the reaction tube. An inter-electrode distance between the first electrode portion and the second electrode portion is determined by at least a frequency of the high frequency power supply and a voltage applied across the electrode. The first and second electrode portions are installed based on the determined inter-electrode distance.

Abstract: Described herein is a technique capable of uniformly processing substrates. According to the technique described herein, there is provided a substrate processing apparatus including: a process chamber where a substrate is processed; a gas supply configured to supply a gas into the process chamber; a plasma generator configured to plasma-excite the gas supplied into the process chamber, the plasma generator including an electrode electrically connected to a high frequency power source; an impedance meter configured to measure an impedance of the plasma generator; a determiner configured to determine an amount of active species generated by the plasma generator based on the impedance measured by the impedance meter; and a controller configured to control the high frequency power source based on the amount of active species determined by the determiner.

Abstract: There is provided a technique that includes: imaging a gas supply hole configured to supply a plasma-converted gas into a process chamber by using an imaging device disposed in the process chamber; detecting a plasma emission intensity based on an image of the imaged gas supply hole; and determining at least one of whether abnormal plasma discharge has occurred and whether plasma flickering has occurred based on the detected plasma emission intensity.

Abstract: There is provided a technique that includes: high-frequency power sources supplying power to plasma generators; and matchers installed between the high-frequency power sources and the plasma generators and matching load impedances of the plasma generators with output impedances of the high-frequency power sources, wherein at least one of the high-frequency power sources includes: a high-frequency oscillator; a directional coupler at a subsequent stage of the high-frequency oscillator, which extracts a part of a traveling wave component from the high-frequency oscillator and a part of a reflected wave component from the matcher; a filter removing a noise signal in the reflected wave component extracted by the directional coupler; and a power monitor measuring the reflected wave component after passing through the filter and the traveling wave component extracted by the directional coupler and feedback-controlling the matcher to reduce a ratio between the reflected wave component and the traveling wave componen

Abstract: To provide a RF generating apparatus that enables apparatus size to be decreased and the cost reduced thereby while also improving power efficiency by performing a stable matching operation, and to provide a plasma treatment apparatus using said apparatus. This RF generating apparatus comprises a plurality of RF generators and matching units, the matching units being provided with only variable-capacity capacitors connected in parallel, thereby reducing the number of elements in terms of the variable-capacity capacitors. A matching calculation section for the RF generators determines, on the basis of traveling waves and reflection waves detected by a detection circuit, the capacity values of the variable-capacity capacitors for the matching units, while adjusting and determining the oscillation frequencies for oscillation circuits in the RF generators so as to decrease the level of the reflection waves. The plasma treatment apparatus uses this RF generating apparatus.

Abstract: There is provided a technique, which includes: a reaction tube configured to form a process chamber in which a substrate is processed; an electrode fixing jig installed outside the reaction tube and configured to fix at least two electrodes for forming plasma in the process chamber; and a heating device installed outside the electrode fixing jig and configured to heat the reaction tube, wherein the at least two electrodes include at least one electrode to which a predetermined potential is applied and at least one electrode to which a reference potential is applied, and wherein a surface area of the at least one electrode to which the predetermined potential is applied is two times or more than a surface area of the at least one electrode to which the reference potential is applied.

Abstract: A fluid control valve is connected to a wet gas flow passage in order to control a flow of a wet gas, and includes an introduction passage for introducing the wet gas into the fluid control valve, a filter including mesh for removing foreign matter contained in the wet gas flowing through the introduction passage, a discharge passage that includes a valve port disposed above the introduction passage and discharges the wet gas that has passed through the filter from the fluid control valve through the valve port, and a valve portion that opens and closes the valve port using a valve body. In this fluid control valve, the filter is disposed in a lowermost portion of the introduction passage.

Abstract: Provided is a flame-retardant polyolefin resin composition, which contains 1 to 100 parts by weight of an organic phosphorus compound (component B) represented by the following formula (1) per 100 parts by weight of the polyolefin resin (component A), realizing high flame retardancy, high heat resistance and excellent physical properties. wherein X1 and X2, which may be the same or different, are aromatic-substituted alkyl groups, represented by the following formula (2): ALAr)n??(2) wherein AL is a branched or linear aliphatic hydrocarbon group having 1 to 5 carbon atoms, Ar is a phenyl group, a naphthyl group, or an anthryl group optionally having a substituent in an aromatic ring, n represents an integer of 1 to 3, and Ar can be bonded to any carbon atom in AL.

Abstract: [Problem] The object of the invention is to provide the filter device disposed in the moist fluid passage of the fuel cell system in that, water is not adhered and never remains in the filter and when leaving it under the low temperature after the system stops, blockage by freezing the filter can surely be prevented, and the complex control and the heat source such as heaters for the decompression as conventional is unnecessary, and the filter device is cheap and compact.

Abstract: According to one aspect of the technique described herein, there is provided a technique including: a reaction tube defining a processing chamber wherein a substrate is processed; an electrode provided at an outer circumferential surface of the reaction tube and configured to generate plasma in the process chamber; an electrode fixing part configured to fix the electrode thereto; a heater provided at an outer circumferential surface of the electrode fixing part and configured to heat an inside of the reaction tube; and a spacer configured to provide a predetermined gap between the electrode and a surface of the electrode fixing part.

Abstract: A wire electric discharge machining apparatus includes: a processing tank, a lower-side wire guide assembly, a lower arm, a direction changing pulley, a winding roller, and a conveying device. The conveying device comprises a high-pressure jet flow generator and a suction pipe. The high-pressure jet flow generator is provided between the direction changing pulley and the winding roller on a side of a front end of a lower arm, and spouts a high-pressure jet flow toward a direction of the winding roller so that a wire electrode is guided only by a restraining force of the high-pressure jet flow and sent flying to the direction of the winding roller with the high-pressure jet flow. The suction pipe is provided on an exit side of the winding roller, and sucks and captures a tip of the wire electrode sent by the high-pressure jet flow.

Abstract: There is provided a plasma generating device that includes a first electrode connected to a high-frequency power supply, and a second electrode to be grounded, wherein the first electrode and the second electrode are alternately arranged such that a number of electrodes of the first electrode and the second electrode are in an odd number of three or more in total, and wherein the second electrode is used in common for two of the first electrode being respectively adjacent to the second electrode used in common.

Abstract: A flameproofing agent for fibers which has high flameproofness and excellent physical properties (light resistance, heat resistance, texture), a process for manufacturing a flameproof fiber product and a flameproof fiber product. The flameproofing agent comprises an organic phosphorus compound (component A) represented by the following formula (1). (In the above formula, X1 and X2 are the same or different and each an aromatic substituted alkyl group represented by the following formula (2).) ALAr)n??(2) (In the above formula, AL is a branched or linear aliphatic hydrocarbon group having 1 to 5 carbon atoms, Ar is a phenyl group, naphthyl group or anthryl group all of which may have a substituent, “n” is an integer of 1 to 3, and Ar may be bonded to any carbon atom contained in AL.

Abstract: Described herein is a technique capable of suppressing the effects of plasma on a film or a structure formed on a substrate. According to the technique, electrode for generating plasma includes protrusion provided with gas flow path inserted in holes of showerhead to uniformly supply gas in plasma state toward a substrate.

Abstract: A flame retardant resin composition containing 1 to 100 parts by weight of (B) an organophosphorus compound (component B) represented by the following formula (1) per 100 parts by weight of (A) a resin component (component A) containing at least 60 wt % of an acrylic resin has high flame retardancy, high transparency and satisfactory physical properties: wherein X1 and X2 are the same or different, and represent alkyl groups substituted with aromatic groups represented by the following formula (2): ALAr)n??(2) wherein AL represents a branched or linear aliphatic hydrocarbon group having 1 to 5 carbon atoms, Ar represents a phenyl group, a naphthyl group, or an anthryl group each optionally substituted, n represents an integer of 1 to 3, and Ar can be bonded to any carbon atom in AL.

Abstract: A method of manufacturing a semiconductor device includes: (a) loading into a process chamber a substrate including: a wiring layer including a first interlayer insulating film, a plurality of copper-containing films formed on the first interlayer insulating film and used as a wiring, an inter-wire insulating film electrically insulating the plurality of copper containing film and a recess formed between the plurality of copper-containing film; and a first diffusion barrier film formed on a first portion of a surface of the plurality of copper-containing films to suppress a diffusion of a component of the plurality of copper-containing film; and (b) supplying a silicon-containing gas into the process chamber to form a silicon-containing film on: a surface of the recess; and a second portion of the surface of the plurality of copper-containing films other than the first portion where the first diffusion barrier film is formed.