Abstract: Provided is a technique of forming a film containing a first element and a second element on a substrate by performing a cycle a predetermined number of times. The cycle includes: (a) supplying a hydro-based precursor containing the first element and a halogen-based precursor containing the second element into a process chamber accommodating a substrate to confine the hydro-based precursor and the halogen-based precursor in the process chamber; (b) maintaining a state where the hydro-based precursor and the halogen-based precursor are confined in the process chamber; and (c) exhausting the process chamber.

Abstract: A semiconductor device manufacturing method includes: accommodating a substrate in a processing chamber; and supplying a silicon-based gas and an amine-based gas into the processing chamber that is heated to form a film including silicon and carbon on the substrate. The forming of the film including silicon and carbon includes: supplying the silicon-based gas and the amine-based gas into the processing chamber and confining the silicon-based gas and the amine-based gas in the processing chamber; maintaining a state in which the silicon-based gas and the amine-based gas are confined in the processing chamber, and exhausting an inside of the processing chamber.

Abstract: A wiring method is provided in which an insulating layer is formed on a surface of a semiconductor device 1 of which a plurality of connecting terminals are exposed, a resin film is formed on a surface of the insulating layer, a groove of a depth equal to or exceeding a thickness of the resin film is formed from a surface side of the resin film so that the groove passes in a vicinity of connecting terminals that are to be connected, and furthermore communicating holes which reach the connecting terminals to be connected from this portion that groove passes in the vicinity thereof are formed.

Abstract: A method of manufacturing a semiconductor device includes forming thin films on substrates by performing a cycle a predetermined number of times. The cycle includes: supplying a process gas into a process container and confining the gas in the container including an outer reaction tube and an inner reaction tube having a flat top inner surface at an upper end portion covering a portion of a top surface of the support arranging and supporting the substrates and including a communication section connecting an inside of the inner reaction tube to an inside of the outer reaction tube, wherein the communication section is disposed at a region other than a region horizontally encompassing a substrate arrangement region; maintaining a state where the gas is confined in the container; and exhausting the gas from the container via the communication section and a space between the inner and outer reaction tubes.

Abstract: A semiconductor device manufacturing method includes: accommodating a substrate in a processing chamber; and supplying a silicon-based gas and an amine-based gas into the processing chamber that is heated to form a film including silicon and carbon on the substrate. The forming of the film including silicon and carbon includes: supplying the silicon-based gas and the amine-based gas into the processing chamber and confining the silicon-based gas and the amine-based gas in the processing chamber; maintaining a state in which the silicon-based gas and the amine-based gas are confined in the processing chamber, and exhausting an inside of the processing chamber.

Abstract: A method of manufacturing a semiconductor device, includes: alternately performing (i) a first step of alternately supplying a first raw material containing a first metal element and a halogen element and a second raw material containing a second metal element and carbon to a substrate by a first predetermined number of times, and (ii) a second step of supplying a nitridation raw material to the substrate, by a second predetermined number of times, wherein alternating the first and second steps forms a metal carbonitride film containing the first metal element having a predetermined thickness on the substrate.

Abstract: A method of manufacturing a semiconductor device, includes: alternately performing (i) a first step of alternately supplying a first raw material containing a first metal element and a halogen element and a second raw material containing a second metal element and carbon to a substrate by a first predetermined number of times, and (ii) a second step of supplying a nitridation raw material to the substrate, by a second predetermined number of times, wherein alternating the first and second steps forms a metal carbonitride film containing the first metal element having a predetermined thickness on the substrate.

Abstract: A method of manufacturing a semiconductor device, includes: alternately performing (i) a first step of alternately supplying a first raw material containing a first metal element and a halogen element and a second raw material containing a second metal element and carbon to a substrate by a first predetermined number of times, and (ii) a second step of supplying a nitridation raw material to the substrate, by a second predetermined number of times, wherein alternating the first and second steps forms a metal carbonitride film containing the first metal element having a predetermined thickness on the substrate.

Abstract: One aspect of the present invention is a three-dimensional structure that has a concave-convex form including a gutter for wiring having at least partially a width of 20 ?m or less, wherein at least a part of a wiring conductor is embedded in the gutter for wiring, and a wiring that extends in such a manner as to creep along the concave-convex form is provided.

Abstract: A wiring method is provided in which an insulating layer is formed on a surface of a semiconductor device 1 of which a plurality of connecting terminals are exposed, a resin film is formed on a surface of the insulating layer, a groove of a depth equal to or exceeding a thickness of the resin film is formed from a surface side of the resin film so that the groove passes in a vicinity of connecting terminals that are to be connected, and furthermore communicating holes which reach the connecting terminals to be connected from this portion that groove passes in the vicinity thereof are formed.

Abstract: One aspect of the present invention resides in a manufacturing method for a semiconductor package, including a covering step of forming a covering insulating layer that covers the surface of a semiconductor element, a film-forming step of forming a resin film on the surface of the covering insulating layer, a circuit pattern-forming step of forming a circuit pattern portion including recesses reaching the surfaces of electrodes of the semiconductor element and a circuit groove having a desired shape and a desired depth, a catalyst-depositing step of depositing a plating catalyst or a precursor thereof on the surface of the circuit pattern portion, a film-separating step of separating the resin film from the covering insulating layer, and a plating processing step of forming a circuit electrically connected to the electrodes, by applying electroless plating to the covering insulating layer, from which the resin film is separated.

Abstract: One aspect of the present invention is a three-dimensional structure in which a wiring is formed on a surface, the three-dimensional structure having an insulating resin layer that contains a filler formed from at least one element selected from typical non-metal elements and typical metal elements, wherein a recessed gutter for wiring is formed on a surface of the insulating resin layer, and at least a part of a wiring conductor is embedded in the recessed gutter for wiring.

Abstract: A circuit board includes an electric circuit having a wiring section and a pad section in the surface of an insulating base substrate. The electric circuit is configured such that a conductor is embedded in a circuit recess formed in the surface of the insulating base substrate, and the surface roughness of the conductor is different in the wiring section and the pad section of the electric circuit. In this case, it is preferable that the surface roughness of the conductor in the pad section is greater than the surface roughness of the conductor in the wiring section.

Abstract: Flame retardant synthetic leather having high flame retardancy and excellent physical properties (light resistance, heat resistance and feeling). The flame retardant synthetic leather contains an organic phosphorus compound (component A) represented by the following formula (1). (In the formula, X1 and X2 are the same or different and each an aromatic substituted alkyl group represented by the following formula (2).) —(AL)—(Ar)n ??(2) (In the formula, AL is a branched or linear aliphatic hydrocarbon group having 1 to 5 carbon atoms, and Ar is a phenyl group, riaphthyl group or anthryl group, all of which may have a substituent. “n” is an integer of 1 to 3, and Ar may be bonded to any carbon atom contained in AL.

Abstract: A copolycarbonate that is derived from a renewable resource, is excellent in heat resistance, flowability and transparency, and prevented from undergoing a dimensional change by water absorption and coloring during molding as well as a transparent molded article obtained therefrom. The copolycarbonate contains predetermined amounts of a unit (A) constituted of an ether diol residue represented by the formula (1), a unit (B) constituted of a bisphenol residue represented by the formula (2), and a unit (C) constituted of another diol residue, wherein the ratio of terminal groups falls within the ranges of the expressions (i) and (ii).

Abstract: A method of manufacturing a semiconductor device, includes: alternately performing (i) a first step of alternately supplying a first raw material containing a first metal element and a halogen element and a second raw material containing a second metal element and carbon to a substrate by a first predetermined number of times, and (ii) a second step of supplying a nitridation raw material to the substrate, by a second predetermined number of times, wherein alternating the first and second steps forms a metal carbonitride film containing the first metal element having a predetermined thickness on the substrate.

Abstract: A method of manufacturing a semiconductor device, includes: alternately performing (i) a first step of alternately supplying a first raw material containing a first metal element and a halogen element and a second raw material containing a second metal element and carbon to a substrate by a first predetermined number of times, and (ii) a second step of supplying a nitridation raw material to the substrate, by a second predetermined number of times, wherein alternating the first and second steps forms a metal carbonitride film containing the first metal element having a predetermined thickness on the substrate.

Abstract: One aspect of the present invention relates to a circuit board including an insulating base substrate; and a circuit layer that is formed of a conductor and that is provided on the surface of the insulating base substrate, wherein the insulating base substrate has a smooth surface having a surface roughness Ra of 0.5 ?m or less, and the conductor is at least partially embedded in a wiring groove formed in the surface of the insulating base substrate.

Abstract: The present invention relates to a manufacturing method of a molded article, including: a molded article forming step of forming a molded article by curing a resin composition on a main surface, on the side of a bendable first supporting medium, of a laminated supporting medium obtained by laminating the first supporting medium and a second supporting medium that is harder than the first supporting medium; a second-supporting medium peeling step of peeling the second supporting medium from the first supporting medium after the molded article forming step; and a first-supporting medium peeling step of peeling the first supporting medium from the molded article while bending the first supporting medium after the second-supporting medium peeling step. The shape of the first supporting medium can be maintained at a curing temperature at which the resin composition is cured in the molded article forming step.

Abstract: A flameproofing agent for fibers which has high flameproofness and excellent physical properties (light resistance, heat resistance, texture), a process for manufacturing a flameproof fiber product and a flameproof fiber product. The flameproofing agent comprises an organic phosphorus compound (component A) represented by the following formula (1). (In the above formula, X1 and X2 are the same or different and each an aromatic substituted alkyl group represented by the following formula (2).) ?AL??Ar)n??(2) (In the above formula, AL is a branched or linear aliphatic hydrocarbon group having 1 to 5 carbon atoms, Ar is a phenyl group, naphthyl group or anthryl group all of which may have a substituent, “n” is an integer of 1 to 3, and Ar may be bonded to any carbon atom contained in AL.