Abstract: The present invention relates to a resin composition which includes a copolymer consisting of a first monomer containing a monomer unit having at least one carboxyl group and a second monomer copolymerizable with the first monomer, and also includes an ultraviolet absorber. The resin composition used is a resin composition for which, when ?1 represents an absorbance coefficient per unit weight of a resin film 2 in a solution prepared by dissolving, in a solvent, the resin film 2 formed by application of the resin composition as a liquid, ?1 at a light wavelength at which the resin film 2 is to be irradiated is at least 0.01 (L/(g·cm)).

Abstract: A circuit board includes an electric circuit having a wiring section and a pad section in the surface of an insulating base substrate. The electric circuit is configured such that a conductor is embedded in a circuit recess formed in the surface of the insulating base substrate, and the surface roughness of the conductor is different in the wiring section and the pad section of the electric circuit. In this case, it is preferable that the surface roughness of the conductor in the pad section is greater than the surface roughness of the conductor in the wiring section.

Abstract: The present invention relates to a resin composition which includes a copolymer consisting of a first monomer containing a monomer unit having at least one carboxyl group and a second monomer copolymerizable with the first monomer, and also includes an ultraviolet absorber. The resin composition used is a resin composition for which, when ?1 represents an absorbance coefficient per unit weight of a resin film 2 in a solution prepared by dissolving, in a solvent, the resin film 2 formed by application of the resin composition as a liquid, ?1 at a light wavelength at which the resin film 2 is to be irradiated is at least 0.01 (L/(g·cm)).

Abstract: A method of manufacturing a semiconductor device includes: accommodating a substrate in a processing chamber; and supplying an organosilicon-based gas into the processing chamber that is heated to form a film including silicon and carbon on the substrate. In the forming of the film including silicon and carbon, a cycle is performed a predetermined number of times. The cycle includes supplying the organosilicon-based gas into the processing chamber and confining the organosilicon-based gas in the processing chamber, maintaining a state in which the organosilicon-based gas is confined in the processing chamber, and exhausting an inside of the processing chamber.

Abstract: The present invention provides a copolycarbonate that has a low photoelastic constant and has fewer foamed cells and that is in particular suitable for use in optical fields. The present invention is a copolycarbonate containing 10 to 90 mol % of a unit (A) derived from spiroglycol and 90 to 10 mol % of a unit (B) derived from aromatic phenol and having terminals satisfying the following expressions (i) and (ii), 0.0001<(a)/(d)<0.1??(i) 0.02<(b)/(d)<0.8??(ii) wherein (a) is an amount of a terminal group derived from spiroglycol, (b) is an amount of a terminal group derived from aromatic phenol, and (d) is a total terminal group amount.

Abstract: [Problem] The object of the invention is to provide the filter device disposed in the moist fluid passage of the fuel cell system in that, water is not adhered and never remains in the filter and when leaving it under the low temperature after the system stops, blockage by freezing the filter can surely be prevented, and the complex control and the heat source such as heaters for the decompression as conventional is unnecessary, and the filter device is cheap and compact.

Abstract: One aspect of the present invention resides in a manufacturing method for a semiconductor package, including a covering step of forming a covering insulating layer that covers the surface of a semiconductor element, a film-forming step of forming a resin film on the surface of the covering insulating layer, a circuit pattern-forming step of forming a circuit pattern portion including recesses reaching the surfaces of electrodes of the semiconductor element and a circuit groove having a desired shape and a desired depth, a catalyst-depositing step of depositing a plating catalyst or a precursor thereof on the surface of the circuit pattern portion, a film-separating step of separating the resin film from the covering insulating layer, and a plating processing step of forming a circuit electrically connected to the electrodes, by applying electroless plating to the covering insulating layer, from which the resin film is separated.

Abstract: One aspect of the present invention is a three-dimensional structure that has a concave-convex form including a gutter for wiring having at least partially a width of 20 ?m or less, wherein at least a part of a wiring conductor is embedded in the gutter for wiring, and a wiring that extends in such a manner as to creep along the concave-convex form is provided.

Abstract: One aspect of the present invention is a three-dimensional structure in which a wiring is formed on a surface, the three-dimensional structure having an insulating resin layer that contains a filler formed from at least one element selected from typical non-metal elements and typical metal elements, wherein a recessed gutter for wiring is formed on a surface of the insulating resin layer, and at least a part of a wiring conductor is embedded in the recessed gutter for wiring.

Abstract: A method of manufacturing a semiconductor device, includes: alternately performing (i) a first step of alternately supplying a first raw material containing a first metal element and a halogen element and a second raw material containing a second metal element and carbon to a substrate by a first predetermined number of times, and (ii) a second step of supplying a nitridation raw material to the substrate, by a second predetermined number of times, wherein alternating the first and second steps forms a metal carbonitride film containing the first metal element having a predetermined thickness on the substrate.

Abstract: A copolycarbonate which is derived from a renewable resource and excellent in heat resistance, flowability and transparency and prevented from undergoing a dimensional change by water absorption and coloring during molding as well as a transparent molded article obtained therefrom. The copolycarbonate comprises predetermined amounts of a unit (A) constituted of an ether diol residue represented by the following formula (1), a unit (B) constituted of a bisphenol residue represented by the following formula (2), and a unit (C) constituted of another diol residue, wherein the ratio of terminal groups falls within the ranges of the following expressions (i) and (ii). (i) 0.001<total number of hydroxyl groups derived from the unit (A) and the unit (C)/total number of all terminal groups<0.3 (ii) 0.02<number of phenolic hydroxyl groups derived from the unit (B)/total number of all terminal groups<0.

Abstract: A method of manufacturing a semiconductor device includes forming thin films on substrates by performing a cycle a predetermined number of times. The cycle includes: supplying a process gas into a process container and confining the gas in the container including an outer reaction tube and an inner reaction tube having a flat top inner surface at an upper end portion covering a portion of a top surface of the support arranging and supporting the substrates and including a communication section connecting an inside of the inner reaction tube to an inside of the outer reaction tube, wherein the communication section is disposed at a region other than a region horizontally encompassing a substrate arrangement region; maintaining a state where the gas is confined in the container; and exhausting the gas from the container via the communication section and a space between the inner and outer reaction tubes.

Abstract: The present invention relates to a resin composition which includes a copolymer consisting of a first monomer containing a monomer unit having at least one carboxyl group and a second monomer copolymerizable with the first monomer, and also includes an ultraviolet absorber. The resin composition used is a resin composition for which, when ?1 represents an absorbance coefficient per unit weight of a resin film 2 in a solution prepared by dissolving, in a solvent, the resin film 2 formed by application of the resin composition as a liquid, ?1 at a light wavelength at which the resin film 2 is to be irradiated is at least 0.01 (L/(g·cm)).

Abstract: Disclosed is a method of manufacturing a semiconductor device. The method includes forming a film containing carbon on a substrate by repeating a cycle plural times. The cycle includes: in a state in which a substrate housed in a processing chamber is heated, supplying an organic-based gas into the processing chamber and confining the organic-based gas inside the processing chamber; maintaining a state in which the organic-based gas is confined inside the processing chamber; and exhausting an inside of the processing chamber.

Abstract: The present invention relates to electronic components assembly for electrically connecting electronic components to each other, wherein a wiring formed on a surface of a first electronic component and a wiring formed on a surface of a second electronic component face each other, and are bonded to each other with an electric conductor interposed therebetween, so as to electrically connect the first electronic component and the second electronic component. The electric conductor is a resin composition containing solder or conductive filler.

Abstract: The present invention provides a copolycarbonate that has a low photoelastic constant and has fewer foamed cells and that is in particular suitable for use in optical fields. The present invention is a copolycarbonate containing 10 to 90 mol % of a unit (A) derived from spiroglycol and 90 to 10 mol % of a unit (B) derived from aromatic phenol and having terminals satisfying the following expressions (i) and (ii), 0.0001<(a)/(d)<0.1??(i) 0.02<(b)/(d)<0.8??(ii) wherein (a) is an amount of a terminal group derived from spiroglycol, (b) is an amount of a terminal group derived from aromatic phenol, and (d) is a total terminal group amount.

Abstract: A method of manufacturing a semiconductor device, includes: alternately performing (i) a first step of alternately supplying a first raw material containing a first metal element and a halogen element and a second raw material containing a second metal element and carbon to a substrate by a first predetermined number of times, and (ii) a second step of supplying a nitridation raw material to the substrate, by a second predetermined number of times, wherein alternating the first and second steps forms a metal carbonitride film containing the first metal element having a predetermined thickness on the substrate.

Abstract: A wiring method is provided in which an insulating layer is formed on a surface of a semiconductor device 1 of which a plurality of connecting terminals are exposed, a resin film is formed on a surface of the insulating layer, a groove of a depth equal to or exceeding a thickness of the resin film is formed from a surface side of the resin film so that the groove passes in a vicinity of connecting terminals that are to be connected, and furthermore communicating holes which reach the connecting terminals to be connected from this portion that groove passes in the vicinity thereof are formed.

Abstract: A semiconductor device manufacturing method includes: accommodating a substrate in a processing chamber; and supplying a silicon-based gas and an amine-based gas into the processing chamber that is heated to form a film including silicon and carbon on the substrate. The forming of the film including silicon and carbon includes: supplying the silicon-based gas and the amine-based gas into the processing chamber and confining the silicon-based gas and the amine-based gas in the processing chamber; maintaining a state in which the silicon-based gas and the amine-based gas are confined in the processing chamber, and exhausting an inside of the processing chamber.

Abstract: A circuit board H10 according to the present invention is a circuit board H10 in which an electric circuit H6 including a wiring section H6a and a pad section H6b is provided in the surface of an insulating base substrate H1. The electric circuit H6 is configured such that a conductor H5 is embedded in a circuit recess H3 formed in the surface of the insulating base substrate H1, and the surface roughness of the conductor H5 is different in the wiring section H6a and the pad section H6b of the electric circuit H6. In this case, it is preferable that the surface roughness of the conductor H5 in the pad section H6b is greater than the surface roughness of the conductor H5 in the wiring section H6a.