Abstract: A dual node memory device and methods for fabricating the device are provided. In one embodiment the method comprises forming a layered structure with an insulator layer, a charge storage layer, a buffer layer, and a sacrificial layer on a semiconductor substrate. The layers are patterned to form two spaced apart stacks and an exposed substrate portion between the stacks. A gate insulator and a gate electrode are formed on the exposed substrate, and the sacrificial layer and buffer layer are removed. An additional insulator layer is deposited overlying the charge storage layer to form insulator-storage layer-insulator memory storage areas on each side of the gate electrode. Sidewall spacers are formed at the sidewalls of the gate electrode overlying the storage areas. Bit lines are formed in the substrate spaced apart from the gate electrode, and a word line is formed that contacts the gate electrode and the sidewall spacers.

Abstract: Methods of forming a top oxide around a charge storage material layer of a memory cell and methods of improving quality of a top oxide around a charge storage material layer of a memory cell are provided. The method can involve providing a charge storage layer on a semiconductor substrate, a nitride layer on the charge storage layer, and a first poly layer on the nitride layer, and converting at least a portion of the nitride layer to a top oxide. By converting at least a portion of a nitride layer to a top oxide layer, the quality of the resultant top oxide layer can be improved.

Abstract: An I2C/SPI control interface circuitry, an integrated circuit structure, and a bus structure thereof are provided. The I2C/SPI control interface circuitry includes an I2C control module and a SPI control module. The I2C control module has an I2C clock port and an I2C data port, and the SPI control module has a SPI clock port, a SPI data input port, a SPI data output port, and a SPI chip enable port. The I2C clock port is electrically connected with the SPI chip enable port to become an I2C clock/SPI chip enable input/output end. The I2C data port is electrically connected with the SPI data input port and the SPI data output port to become an I2C/SPI data input/output end. The SPI clock port is the SPI clock output end. The I2C and SPI control module are alternative to be enabled to avoid signal interference and lower the cost of the package and the manufacture of the integrated circuit.

Abstract: An image/audio data sensing module incorporated in a case of an electronic apparatus. The image/audio data sensing module comprises: at least one image sensor, for sensing an image datum; a plurality of audio sensors, for sensing at least one audio datum; a processor, for processing the image datum and the audio datum according to a control instruction set to generate a processed image data stream and at least one processed audio data stream, and combining the processed image data stream and the processed audio data stream to generate an output data stream following a transceiver interface standard; a transceiver interface, for receiving the control instruction set and transmitting the output data stream via a multiplexing process; and a circuit board, wherein the image sensor, the audio sensors and the transceiver interface are coupled to the circuit board, and the processor is provided on the circuit board.

Abstract: A universal serial bus (USB) apparatus for lowering power consumption is provided. The universal serial bus apparatus includes a universal serial bus circuitry, a monitor unit, and a system duty clock generator. The monitor unit is used to monitor a start of frame (SOF) packet generated by the universal serial bus circuitry and generates a clock control signal accordingly. The system duty clock generator receives the clock control signal and a reference clock signal to generate a system duty clock signal. The enable or disable status of the system duty clock signal can be determined according to the SOF packet monitored by the monitor unit so as to make the universal serial bus apparatus enter into runtime idle mode to lower the power consumption.

Abstract: A memory device comprising an optimization component that facilitates erasing memory cells in a substantially homogeneous electromagnetic field and methods that facilitate erasing memory cells in a substantially homogeneous electromagnetic field are presented. The optimization component facilitates selecting a subset of memory cells to be erased at the same time, such that a memory cell in the subset of memory cells has two neighbor memory cells adjacent thereto that are in the subset of memory, or one neighbor memory cell adjacent thereto when the memory cell is an end-row memory cell. The optimization component facilitates performing a Fowler-Nordheim channel erase to erase the subset of memory cells, and a predetermined voltage potential associated with an erase command is applied to each cell of the subset of memory cells to facilitate reducing fringing effect associated with the electromagnetic fields applied to the cells during the erase.

Abstract: A method for fabricating a memory device with a self-aligned trap layer which is optimized for scaling is disclosed. In the present invention, a non-conformal oxide is deposited over the charge trapping layer to form a thick oxide on top of the core source/drain region and a pinch off and a void at the top of the STI trench. An etch is performed on the pinch-off oxide and the thin oxide on the trapping layer on the STI oxide. The trapping layer is then partially etched between the core cells. A dip-off of the oxide on the trapping layer is performed. And a top oxide is formed. The top oxide converts the remaining trap layer to oxide and thus isolate the trap layer.

Abstract: A buffer board for a treadmill includes a bamboo strip portion and an endurable slide plate. The bamboo strip portion is composed of at least one longitudinal bamboo strip and at least one transverse bamboo strip. The longitudinal bamboo strip and the transverse bamboo strip are crosswise knitted to constitute a woven bamboo plate. The woven bamboo plate can be stacked one by one to constitute a stack of woven bamboo plates in a desired thickness for enhancing the strength of the buffer board. The longitudinal bamboo strips connected side by side and the transverse bamboo strips connected side by side are stacked up to constitute a laminated bamboo board. The upper woven bamboo plate or the laminated bamboo board is attached with the endurable slide board. After being applied with a press force, the surface of the endurable slide board is formed with concave-convex massage pattern according to the pattern of the woven bamboo plate or the laminated bamboo board.

Abstract: The mechanism of forming a metal bump structure described above resolves the delamination issues between a conductive layer on a substrate and a metal bump connected to the conductive layer. The conductive layer can be a metal pad, a post passivation interconnect (PPI) layer, or a top metal layer. By performing an in-situ deposition of a protective conductive layer over the conductive layer (or base conductive layer), the under bump metallurgy (UBM) layer of the metal bump adheres better to the conductive layer and reduces the occurrence of interfacial delamination. In some embodiments, a copper diffusion barrier sub-layer in the UBM layer can be removed. In some other embodiments, the UBM layer is not needed if the metal bump is deposited by a non-plating process and the metal bump is not made of copper.

Abstract: A dual node memory device and methods for fabricating the device are provided. In one embodiment the method comprises forming a layered structure with an insulator layer, a charge storage layer, a buffer layer, and a sacrificial layer on a semiconductor substrate. The layers are patterned to form two spaced apart stacks and an exposed substrate portion between the stacks. A gate insulator and a gate electrode are formed on the exposed substrate, and the sacrificial layer and buffer layer are removed. An additional insulator layer is deposited overlying the charge storage layer to form insulator-storage layer-insulator memory storage areas on each side of the gate electrode. Sidewall spacers are formed at the sidewalls of the gate electrode overlying the storage areas. Bit lines are formed in the substrate spaced apart from the gate electrode, and a word line is formed that contacts the gate electrode and the sidewall spacers.

Abstract: A NAND flash memory cell string having scaled down select gates. The NAND flash memory cell string includes a first select gate that has a width of 140 nm or less and a plurality of wordlines that are coupled to the first select gate. Gates associated with the plurality of wordlines are formed of p+ polysilicon. A second select gate that has a width of 140 nm or less is coupled to the plurality of wordlines.

Abstract: A method for fabricating a memory device with a self-aligned trap layer which is optimized for scaling is disclosed. In the present invention, a non-conformal oxide is deposited over the charge trapping layer to form a thick oxide on top of the core source/drain region and a pinch off and a void at the top of the STI trench. An etch is performed on the pinch-off oxide and the thin oxide on the trapping layer on the STI oxide. The trapping layer is then partially etched between the core cells. A dip-off of the oxide on the trapping layer is performed. And a top oxide is formed. The top oxide converts the remaining trap layer to oxide and thus isolate the trap layer.

Abstract: Memory devices having improved TPD characteristics and methods of making the memory devices are provided. The memory devices contain two or more memory cells on a semiconductor substrate and bit line dielectrics between the memory cells. The bit line dielectrics can extend into the semiconductor. The memory cell contains one or more charge storage nodes, a first poly gate, a pair of first bit lines, and a pair of second bit lines. The second bit line can be formed at a higher energy level, a higher concentration of dopants, or a combination thereof compared to an energy level and a concentration of dopants of the first bit line.

Abstract: A method for forming a memory device is provided. A nitride layer is formed over a substrate. The nitride layer and the substrate are etched to form a trench. The nitride layer is trimmed on opposite sides of the trench to widen the trench within the nitride layer. The trench is filled with an oxide material. The nitride layer is stripped from the memory device, forming a mesa above the trench.

Abstract: The invention provides a motherboard and an interface control method of a memory slot thereof. The motherboard includes a plurality of slot groups, a bus, and an interface controller. Each of the slot groups includes a first memory slot and a second memory slot connected with the bus. The first memory slot and the second memory slot form two different access addresses. The interface controller transmits a plurality of pin control signals to the corresponding slot groups to make the two access addresses of the first memory slot and the second memory slot of a using slot group of the slot groups different from the two access addresses of the first memory slot and the second memory slot of each of the other slot groups. Then, the interface controller accesses the using slot group via the bus.

Abstract: A gate driver on array of a display includes a substrate having a peripheral region, and a gate driver on array structure formed in the peripheral region. The gate driver on array structure includes a pull-down transistor, and the pull-down transistor has a gate electrode, an insulating layer, a semiconductor island, a source electrode, and a drain electrode. The semiconductor island extends out of both edges of the gate electrode, and extends out of an edge of the source electrode and an edge of the drain electrode.

Abstract: A method for fabricating a memory device with a self-aligned trap layer which is optimized for scaling is disclosed. In the present invention, a non-conformal oxide is deposited over the charge trapping layer to form a thick oxide on top of the core source/drain region and a pinch off and a void at the top of the STI trench. An etch is performed on the pinch-off oxide and the thin oxide on the trapping layer on the STI oxide. The trapping layer is then partially etched between the core cells. A dip-off of the oxide on the trapping layer is performed. And a top oxide is formed. The top oxide converts the remaining trap layer to oxide and thus isolate the trap layer.

Abstract: A method for fabricating a memory device with a self-aligned trap layer which is optimized for scaling is disclosed. In the present invention, a non-conformal oxide is deposited over the charge trapping layer to form a thick oxide on top of the core source/drain region and a pinch off and a void at the top of the STI trench. An etch is performed on the pinch-off oxide and the thin oxide on the trapping layer on the STI oxide. The trapping layer is then partially etched between the core cells. A dip-off of the oxide on the trapping layer is performed. And a top oxide is formed. The top oxide converts the remaining trap layer to oxide and thus isolate the trap layer.

Abstract: A liquid crystal display and a shift register device thereof are provided. The shift register device includes a plurality of shift registers connected in series. In the invention, the channel lengths of the transistors, which are responsible to stop outputting scan signal, in the shift register are manufactured greater than the channel lengths of the transistors, which are responsible to output the scan signal, in the shift register. As a result, the degree of influence that the leakage currents of the N-type transistors being responsible to stop outputting the scan signal in the shift register affect the transistors being responsible to output the scan signal when the transistors being responsible to stop outputting the scan signal are in the sub-threshold region is reduced. And thus each of the shift registers is able to output the scan signal normally.

Abstract: Embodiments of the present invention disclose a memory device having an array of flash memory cells with source contacts that facilitate straight word lines, and a method for producing the same. The array is comprised of a plurality of non-intersecting shallow trench isolation (STI) regions that isolate a plurality of memory cell columns. A source column is implanted with n-type dopants after the formation of a tunnel oxide layer and a first polysilicon layer. The implanted source column is coupled to a plurality of common source lines that are coupled to a plurality of source regions associated with memory cells in the array. A source contact is coupled to the implanted source column for providing electrical coupling with the plurality of source regions. The source contact is collinear with a row of drain contacts that are coupled to drain regions associated with a row of memory cells. The arrangement of source contacts collinear with the row of drain contacts allows for straight word line formation.