Abstract: A semiconductor device includes a substrate having an active region, a first gate structure over a top surface of the substrate, a second gate structure over the top surface of the substrate, a pair of first spacers on each sidewall of the first gate structure, a pair of second spacers on each sidewall of the second gate structure, an insulating layer over at least the first gate structure, a first conductive feature over the active region and a second conductive feature over the substrate. Further, the second gate structure is adjacent to the first gate structure and a top surface of the first conductive feature is coplanar with a top surface of the second conductive feature.

Abstract: A conductive line structure includes two conductive lines in a layout. The two cut lines are over at least a part of the two conductive lines in the layout. The cut lines designate cut sections of the two conductive lines and the cut lines are spaced from each other within a fabrication process limit. The two cut lines are connected in the layout. The two conductive lines are patterned over a substrate in a physical integrated circuit using the two connected parallel cut lines. The two conductive lines are electrically conductive.

Abstract: A semiconductor device includes two elongated active regions that include source/drain regions for multiple transistor devices, a first contact layer that includes an electrical connection between the two active regions, a second contact layer that includes a connection between two gate lines, and a gate contact layer that provides connections to the gate lines.

Abstract: A device includes an active region in a semiconductor substrate, a gate strip over and crossing the active region, and a jog over the active region and connected to the gate strip to form a continuous region. The jog is on a side of the gate strip. A first contact plug is at a same level as the gate strip, wherein the first contact plug is on the side of the gate strip. A second contact plug is over the jog and the first contact plug. The second contact plug electrically interconnects the first contact plug and the jog.

Abstract: A method of forming a layout design for fabricating an integrated circuit (IC) is disclosed. The method includes identifying one or more areas in the layout design occupied by one or more segments of a plurality of gate structure layout patterns of the layout design; and generating a set of layout patterns overlapping the identified one or more areas. The plurality of gate structure layout patterns has a predetermined pitch smaller than a spatial resolution of a predetermined lithographic technology. A first layout pattern of the set of layout patterns has a width less than twice the predetermined pitch.

Abstract: A method of processing a gate electrode cutting (CUT) layout usable for fabricating an integrated circuit (IC) is disclosed. The method includes determining if a first CUT layout pattern and a second CUT layout pattern are in compliance with a predetermined spatial resolution requirement. If the first CUT layout pattern and the second CUT layout pattern are not in compliance with the predetermined spatial resolution requirement, a merged CUT layout pattern is generated based on the first CUT layout pattern, the second CUT layout pattern, and a stitching layout pattern, and a remedial connecting layout pattern is added to a conductive layer layout. The stitching layout pattern corresponds to a carved-out portion of a third gate electrode structure. The remedial connecting layout pattern corresponds to fabricating a conductive feature electrically connecting two portions of the third gate electrode structure that are separated by the corresponding carved-out portion.

Abstract: An integrated circuit comprises a first layer on a first level. The first layer comprises a set of first lines. The first lines each have a length and a width. The length of each of the first lines is greater than the width. The integrated circuit also comprises a second layer on a second level different from the first level. The second layer comprises a set of second lines. The second lines each have a length and a width. The length of each of the second lines is greater than the width. The integrated circuit further comprises a coupling configured to connect at least one first line of the set of first lines with at least one second line of the set of second lines. The coupling has a length and a width. The set of second lines has a pitch measured between the lines of the set of second lines in the first direction. The length of the first coupling is greater than or equal to the pitch.

Abstract: Methods and apparatus for polysilicon MOS capacitors in a replacement gate process. A method includes disposing a gate dielectric layer over a semiconductor substrate; disposing a polysilicon gate layer over the dielectric layer; patterning the gate dielectric layer and the polysilicon gate layer to form a plurality of polysilicon gates spaced by at least a minimum polysilicon to polysilicon pitch; defining a polysilicon resistor region containing at least one of the polysilicon gates and not containing at least one other of the polysilicon gates, which form dummy gates; depositing a mask layer over an inter-level dielectric layer; patterning the mask layer to expose the dummy gates; removing the dummy gates and the gate dielectric layer underneath the dummy gates to leave trenches in the inter-level dielectric layer; and forming high-k metal gate devices in the trenches in the inter-level dielectric layer. An apparatus produced by the method is disclosed.

Abstract: A semiconductor device includes a substrate having an active region, a first gate structure over a top surface of the substrate, a second gate structure over the top surface of the substrate, a pair of first spacers on each sidewall of the first gate structure, a pair of second spacers on each sidewall of the second gate structure, an insulating layer over at least the first gate structure, a first conductive feature over the active region and a second conductive feature over the substrate. Further, the second gate structure is adjacent to the first gate structure and a top surface of the first conductive feature is coplanar with a top surface of the second conductive feature.

Abstract: A method for mask optimization, the method including moving any features of a gate contact mask that are in violation of a spacing rule to a second layer contact mask, splitting an elongated feature of the second layer mask that is too close to a feature moved to the second layer mask from the gate contact mask, and connecting two split features of a first layer contact mask, the split features corresponding to the elongated feature of the second layer mask.

Abstract: Provided is an integrated circuit (IC) testline layout. The layout has a device boundary and a main pattern boundary inside the device boundary. The layout includes at least one main pattern inside the main pattern boundary. The layout further includes a plurality of dummy patterns in a region that is between the main pattern boundary and the device boundary. The plurality of dummy patterns is printable in a photolithography process and is arranged in a ring with a uniform spacing between two adjacent dummy patterns.

Abstract: A device includes an active region in a semiconductor substrate, a gate strip over and crossing the active region, and a jog over the active region and connected to the gate strip to form a continuous region. The jog is on a side of the gate strip. A first contact plug is at a same level as the gate strip, wherein the first contact plug is on the side of the gate strip. A second contact plug is over the jog and the first contact plug. The second contact plug electrically interconnects the first contact plug and the jog.

Abstract: A method of forming a layout design for fabricating an integrated circuit (IC) is disclosed. The method includes identifying one or more areas in the layout design occupied by one or more segments of a plurality of gate structure layout patterns of the layout design; and generating a set of layout patterns overlapping the identified one or more areas. The plurality of gate structure layout patterns has a predetermined pitch smaller than a spatial resolution of a predetermined lithographic technology. A first layout pattern of the set of layout patterns has a width less than twice the predetermined pitch.

Abstract: A semiconductor device includes a substrate having an active region, a first gate structure over a top surface of the substrate, a second gate structure over the top surface of the substrate, a pair of first spacers on each sidewall of the first gate structure, a pair of second spacers on each sidewall of the second gate structure, an insulating layer over at least the first gate structure, a first conductive feature over the active region and a second conductive feature over the substrate. Further, the second gate structure is adjacent to the first gate structure and a top surface of the first conductive feature is coplanar with a top surface of the second conductive feature.

Abstract: An integrated circuit comprises a first layer on a first level. The first layer comprises a set of first lines. The first lines each have a length and a width. The length of each of the first lines is greater than the width. The integrated circuit also comprises a second layer on a second level different from the first level. The second layer comprises a set of second lines. The second lines each have a length and a width. The length of each of the second lines is greater than the width. The integrated circuit further comprises a coupling configured to connect at least one first line of the set of first lines with at least one second line of the set of second lines. The coupling has a length and a width. The set of second lines has a pitch measured between the lines of the set of second lines in the first direction. The length of the first coupling is greater than or equal to the pitch.

Abstract: A method of processing a gate electrode cutting (CUT) layout usable for fabricating an integrated circuit (IC) is disclosed. The method includes determining if a first CUT layout pattern and a second CUT layout pattern are in compliance with a predetermined spatial resolution requirement. If the first CUT layout pattern and the second CUT layout pattern are not in compliance with the predetermined spatial resolution requirement, a merged CUT layout pattern is generated based on the first CUT layout pattern, the second CUT layout pattern, and a stitching layout pattern, and a remedial connecting layout pattern is added to a conductive layer layout. The stitching layout pattern corresponds to a carved-out portion of a third gate electrode structure. The remedial connecting layout pattern corresponds to fabricating a conductive feature electrically connecting two portions of the third gate electrode structure that are separated by the corresponding carved-out portion.

Abstract: A semiconductor device includes a substrate having an active area, a gate structure over the active area, a lower conductive layer over and electrically coupled to the active area, and an upper conductive layer over and electrically coupled to the lower conductive layer. The lower conductive layer is at least partially co-elevational with the gate structure. The lower conductive layer includes first and second conductive segments spaced from each other. The upper conductive layer includes a third conductive segment overlapping the first and second conductive segments. The third conductive segment is electrically coupled to the first conductive segment, and electrically isolated from the second conductive segment.

Abstract: A method of forming a layout design for fabricating an integrated circuit (IC) is disclosed. The method includes identifying one or more areas in the layout design occupied by one or more segments of a plurality of gate structure layout patterns of the layout design; and generating a set of layout patterns overlapping the identified one or more areas. The plurality of gate structure layout patterns has a predetermined pitch smaller than a spatial resolution of a predetermined lithographic technology. A first layout pattern of the set of layout patterns has a width less than twice the predetermined pitch.

Abstract: A post placement abutment treatment for cell row design is provided. In an embodiment a first cell and a second cell are placed in a first cell row and a third cell and a fourth cell are placed into a second cell row. After placement vias connecting power and ground rails to the underlying structures are analyzed to determine if any can be merged or else removed completely. By merging and removing the closely placed vias, the physical limitations of photolithography may be by-passed, allowing for smaller structures to be formed.

Abstract: Methods and apparatus for hybrid MOS capacitors in replacement gate process. A method is disclosed including patterning a gate dielectric layer and a polysilicon gate layer to form a polysilicon gate region over a substrate; forming an inter-level dielectric layer over the substrate and surrounding the polysilicon gate region; defining polysilicon resistor regions each containing at least one portion of the polysilicon gate region and not containing at least one other portion of the polysilicon gate region, forming dummy gate regions removing the dummy gate regions and the gate dielectric layer underneath the dummy gate regions to leave trenches; and forming high-k metal gate devices in the trenches. A capacitor region including a high-k metal gate and a polysilicon gate next to the high-k metal gate is disclosed. Additional hybrid capacitor apparatuses are disclosed.