Patents by Inventor Tung-Heng Hsieh

Tung-Heng Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming silicide and semiconductor device formed thereby
    Publication number: 20060231910
    Abstract: A method for forming silicide and a semiconductor device formed thereby. A Si-containing polycrystalline region is converted to an amorphous region, and annealed to form a regrown polycrystalline region having an increased grain size. A silicide layer is formed by reacting a metal and the regrown polycrystalline region having the increased grain size.
    Type: Application
    Filed: April 15, 2005
    Publication date: October 19, 2006
    Inventors: Tung-Heng Hsieh, Chien-Li Cheng, Yi-Shien Mor, Yung-Shun Chen