Abstract: A method for operating an assembly tool includes deposing a first component on an assembly surface with a first tool tip of a manipulator having a range of motion defined by a plane and an axis that is substantially normal to the plane, deposing a second component on the assembly surface, changing an orientation of the assembly surface relative to the axis from a first orientation to a second orientation, lifting the first component from the assembly surface with a second tool tip of the manipulator, and deposing the first component on the second component.

Abstract: A method of forming an integrated photonic semiconductor structure having a photonic device and a CMOS device may include depositing a first silicon nitride layer having a first stress property over the photonic device, depositing an oxide layer having a stress property over the deposited first silicon nitride layer, and depositing a second silicon nitride layer having a second stress property over the oxide layer. The deposited first silicon nitride layer, the oxide layer, and the second silicon nitride layer encapsulate the photonic device.

Abstract: A method for assembling a semiconductor photonic package device includes bonding a portion of a first surface of a semiconductor die portion to a portion of a carrier portion, bonding a single mode optical ferrule portion to a portion of the first surface of the semiconductor die portion, and disposing a cover plate assembly in contact with the optical ferrule portion and the carrier portion.

Abstract: A method for assembling a semiconductor photonic package device includes bonding a portion of a first surface of a semiconductor die portion to a portion of a carrier portion, bonding a single mode optical ferrule portion to a portion of the first surface of the semiconductor die portion, and disposing a cover plate assembly in contact with the optical ferrule portion and the carrier portion.

Abstract: A method for operating an assembly tool includes deposing a first component on an assembly surface with a first tool tip of a manipulator having a range of motion defined by a plane and an axis that is substantially normal to the plane, deposing a second component on the assembly surface, changing an orientation of the assembly surface relative to the axis from a first orientation to a second orientation, lifting the first component from the assembly surface with a second tool tip of the manipulator, and deposing the first component on the second component.

Abstract: A method for far back end of the line (FBEOL) protection of a semiconductor device includes forming a patterned layer over a back end of the line (BEOL) stack, depositing a first conformal protection layer on the patterned layer which covers horizontal surfaces of a top surface and sidewalls of openings formed in the patterned layer. A resist layer is patterned over the first conformal protection layer such that openings in the resist layer correspond with the openings in the patterned layer. The first conformal protection layer is etched through the openings in the resist layer to form extended openings that reach a stop position. The resist layer is removed, and a second conformal protection layer is formed on the first conformal protection layer and on sidewalls of the extended openings to form an encapsulation boundary to protect at least the patterned layer and a portion of the BEOL stack.

Abstract: A method for far back end of the line (FBEOL) protection of a semiconductor device includes forming a patterned layer over a back end of the line (BEOL) stack, depositing a first conformal protection layer on the patterned layer which covers horizontal surfaces of a top surface and sidewalls of openings formed in the patterned layer. A resist layer is patterned over the first conformal protection layer such that openings in the resist layer correspond with the openings in the patterned layer. The first conformal protection layer is etched through the openings in the resist layer to form extended openings that reach a stop position. The resist layer is removed, and a second conformal protection layer is formed on the first conformal protection layer and on sidewalls of the extended openings to form an encapsulation boundary to protect at least the patterned layer and a portion of the BEOL stack.

Abstract: An interface device includes a body portion having a single-mode waveguide portion including a substantially optically transparent material, a cladding portion defined by channels contacting the waveguide portion, the cladding portion including a substantially optically transparent polymer material, an engagement feature operative to engage a portion of a wafer, and a guide portion operative to engage a portion of an optical fiber ferrule.

Abstract: A method of forming an integrated photonic semiconductor structure having a photonic device and a CMOS device may include depositing a first silicon nitride layer having a first stress property over the photonic device, depositing an oxide layer having a stress property over the deposited first silicon nitride layer, and depositing a second silicon nitride layer having a second stress property over the oxide layer. The deposited first silicon nitride layer, the oxide layer, and the second silicon nitride layer encapsulate the photonic device.

Abstract: The transparent photodetector includes a substrate; a waveguide on the substrate; a displaceable structure that can be displaced with respect to the substrate, the displaceable structure in proximity to the waveguide; and a silicon nanowire array suspended with respect to the substrate and mechanically linked to the displaceable structure, the silicon nanowire array comprising a plurality of silicon nanowires having piezoresistance. In operation, a light source propagating through the waveguide results in an optical force on the displaceable structure which further results in a strain on the nanowires to cause a change in electrical resistance of the nanowires. The substrate may be a semiconductor on insulator substrate.

Abstract: An assembly tool apparatus includes a manipulator having a range of motion defined by a plane and an axis that is substantially normal to the plane, a jig having an assembly surface operative to move from a first orientation relative to the axis to a second orientation relative to the axis, a first tool tip operative to engage with and be positioned by the manipulator, and a second tool tip operative to engage with and be positioned by the manipulator.

Abstract: A method for operating an assembly tool includes deposing a first component on an assembly surface with a first tool tip of a manipulator having a range of motion defined by a plane and an axis that is substantially normal to the plane, deposing a second component on the assembly surface, changing an orientation of the assembly surface relative to the axis from a first orientation to a second orientation, lifting the first component from the assembly surface with a second tool tip of the manipulator, and deposing the first component on the second component.

Abstract: Techniques for fabricating nanowire-based devices are provided. In one aspect, a method for fabricating a semiconductor device is provided comprising the following steps. A wafer is provided having a silicon-on-insulator (SOI) layer over a buried oxide (BOX) layer. Nanowires and pads are etched into the SOI layer to form a ladder-like structure wherein the pads are attached at opposite ends of the nanowires. The BOX layer is undercut beneath the nanowires. The nanowires and pads are contacted with an oxidizing gas to oxidize the silicon in the nanowires and pads under conditions that produce a ratio of a silicon consumption rate by oxidation on the nanowires to a silicon consumption rate by oxidation on the pads of from about 0.75 to about 1.25. An aspect ratio of width to thickness among all of the nanowires may be unified prior to contacting the nanowires and pads with the oxidizing gas.

Abstract: A fiber to wafer interface system includes an interface device comprising a flexible substrate portion, a flexible cladding portion arranged on the substrate portion, a flexible single-mode waveguide portion arranged on the cladding portion including a substantially optically transparent material, a connector portion engaging a first distal end of the flexible substrate portion, the connector portion operative to engage a portion of an optical fiber ferrule, a wafer portion comprising a single mode waveguide portion arranged on a portion of the wafer, an adhesive disposed between a portion of the single mode waveguide portion of the body portion and the single mode waveguide portion of the wafer portion, the adhesive securing the body portion to the wafer portion.

Abstract: A fiber to wafer interface system includes an interface device comprising a flexible substrate portion, a flexible cladding portion arranged on the substrate portion, a flexible single-mode waveguide portion arranged on the cladding portion including a substantially optically transparent material, a connector portion engaging a first distal end of the flexible substrate portion, the connector portion operative to engage a portion of an optical fiber ferrule, a wafer portion comprising a single mode waveguide portion arranged on a portion of the wafer, an adhesive disposed between a portion of the single mode waveguide portion of the body portion and the single mode waveguide portion of the wafer portion, the adhesive securing the body portion to the wafer portion.

Abstract: An interface device includes a flexible substrate portion, a flexible cladding portion arranged on the substrate portion, a flexible single-mode waveguide portion arranged on the cladding portion including a substantially optically transparent material, a first engagement feature operative to engage a portion of a wafer, and a connector portion engaging a first distal end of the flexible substrate portion, the connector portion operative to engage a portion of an optical fiber ferrule.

Abstract: An interface device includes a flexible substrate portion, a flexible cladding portion arranged on the substrate portion, a flexible single-mode waveguide portion arranged on the cladding portion including a substantially optically transparent material, a first engagement feature operative to engage a portion of a wafer, and a connector portion engaging a first distal end of the flexible substrate portion, the connector portion operative to engage a portion of an optical fiber ferrule.

Abstract: An interface device includes a body portion having a single-mode waveguide portion including a substantially optically transparent material, a cladding portion defined by channels contacting the waveguide portion, the cladding portion including a substantially optically transparent polymer material, an engagement feature operative to engage a portion of a wafer, and a guide portion operative to engage a portion of an optical fiber ferrule.

Abstract: Techniques for preventing bending/buckling of suspended micro/nanostructures during oxidation are provided. In one aspect, a method for oxidizing a structure is provided. The method includes providing the structure having at least one suspended element selected from the group consisting of: a microstructure, a nanostructure and a combination thereof; surrounding the at least one suspended element in a cladding material; and oxidizing the at least one suspended element through the cladding material, wherein the cladding material physically constrains and thereby prevents distortion of the at least one suspended element during the oxidation.

Abstract: A memory device and a method of forming the same are provided. The memory device includes a substrate; a set of electrodes disposed on the substrate; a dielectric layer formed between the set of electrodes; and a transition metal oxide layer formed between the set of electrodes, the transition metal oxide layer configured to undergo a metal-insulator transition (MIT) to perform a read or write operation.