Patents by Inventor Tze-Liang Lee

Tze-Liang Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Via patterning using multiple photo multiple etch
    Patent number: 10340178
    Abstract: A method includes forming a dielectric layer, forming a photo resist over the dielectric layer, forming a first mask layer over the photo resist, and forming a second mask layer over the first mask layer. A first-photo-first-etching is performed to form a first via pattern in the second mask layer, wherein the first-photo-first-etching stops on a top surface of the first mask layer. A second-photo-second-etching is performed to form a second via pattern in the second mask layer, wherein the second-photo-second-etching stops on the top surface of the first mask layer. The first mask layer is etched using the second mask layer as an etching mask. The photo resist and the dielectric layer are etched to simultaneously transfer the first via pattern and the second via pattern into the dielectric layer.
    Type: Grant
    Filed: November 26, 2018
    Date of Patent: July 2, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jung-Hau Shiu, Chung-Chi Ko, Tze-Liang Lee, Wen-Kuo Hsieh, Yu-Yun Peng
  • Semiconductor device and method of forming vertical structure
    Patent number: 10325994
    Abstract: According to an exemplary embodiment, a method of forming a vertical structure with at least two barrier layers is provided. The method includes the following operations: providing a substrate; providing a vertical structure over the substrate; providing a first barrier layer over a source, a channel, and a drain of the vertical structure; and providing a second barrier layer over a gate and the drain of the vertical structure.
    Type: Grant
    Filed: April 23, 2018
    Date of Patent: June 18, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chih-Tang Peng, Tai-Chun Huang, Teng-Chun Tsai, Cheng-Tung Lin, De-Fang Chen, Li-Ting Wang, Chien-Hsun Wang, Huan-Just Lin, Yung-Cheng Lu, Tze-Liang Lee
  • Injector for forming films respectively on a stack of wafers
    Patent number: 10316411
    Abstract: An injector for forming films respectively on a stack of wafers is provided. The injector includes a plurality of hole structures. Every adjacent two of the wafers have therebetween a wafer spacing, and each of the wafers has a working surface. The hole structures respectively correspond to the respective wafer spacings. The working surface and a respective hole structure have therebetween a parallel distance. The parallel distance is larger than a half of the wafer spacing. A wafer processing apparatus and a method for forming films respectively on a stack of wafers are also provided.
    Type: Grant
    Filed: March 23, 2015
    Date of Patent: June 11, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Wei-Che Hsieh, Brian Wang, Tze-Liang Lee, Yi-Hung Lin, Hao-Ming Lien, Shiang-Rung Tsai, Tai-Chun Huang
  • Treatment system and method
    Patent number: 10312075
    Abstract: A method of descumming a dielectric layer is provided. In an embodiment the dielectric layer is deposited over a substrate, and a photoresist is applied, exposed, and developed after the photoresist has been applied. Once the pattern of the photoresist is transferred to the underlying dielectric layer, a descumming process is performed, wherein the descumming process utilizes a mixture of a carbon-containing precursor, a descumming precursor, and a carrier gas. The mixture is ignited into a treatment plasma, and the treatment plasma is applied to the dielectric layer in order to descum the dielectric layer.
    Type: Grant
    Filed: January 6, 2016
    Date of Patent: June 4, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wan-Yi Kao, Kuang-Yuan Hsu, Tze-Liang Lee
  • Apparatus and Method for Spatial Atomic Layer Deposition
    Publication number: 20190136378
    Abstract: A semiconductor fabrication apparatus includes a processing chamber; a wafer stage configured in the processing chamber; a first chemical delivery mechanism configured in the processing chamber to provide a first chemical to a first reaction zone in the processing chamber; and air edge mechanisms configured on both sides of the first reaction zone to isolate the first reaction zone from other reaction zones in the processing chamber.
    Type: Application
    Filed: December 17, 2018
    Publication date: May 9, 2019
    Inventors: Anthony Lin, Ching-Lun Lai, Pei-Ren Jeng, Tze-Liang Lee
  • FinFETs and Methods of Forming the Same
    Publication number: 20190140076
    Abstract: A method includes forming a dummy gate stack on a substrate, forming a spacer layer on the dummy gate stack, forming an etch stop layer over the spacer layer and the dummy gate stack, the etch stop layer comprising a vertical portion and a horizontal portion, and performing a densification process on the etch stop layer, wherein the horizontal portion is denser than the vertical portion after the densification process The method also includes forming an oxide layer over the etch stop layer, performing an anneal process on the oxide layer and the etch stop layer, wherein the vertical portion has a greater concentration of oxygen than the horizontal portion after the anneal process.
    Type: Application
    Filed: December 17, 2018
    Publication date: May 9, 2019
    Inventors: Bor Chiuan Hsieh, Chung-Ting Ko, Ting-Gang Chen, Chien Chung Huang, Tai-Chun Huang, Tze-Liang Lee
  • Wafer Holder with Tapered Region
    Publication number: 20190124721
    Abstract: An apparatus, a system and a method are disclosed. An exemplary method includes providing a wafer process chamber and a plurality of radiant heat elements under the wafer process chamber, receiving a wafer holder configured to be used in the wafer process chamber, and processing a wafer located on the wafer holder in the wafer process chamber. The wafer holder includes: a wafer contact portion including an upper surface and a lower surface, an exterior portion including an upper surface and a lower surface, and a tapered region formed in the wafer contact portion.
    Type: Application
    Filed: December 17, 2018
    Publication date: April 25, 2019
    Inventors: Yi-Hung Lin, Li-Ting Wang, Tze-Liang Lee
  • Semiconductor strips with undercuts and methods for forming the same
    Patent number: 10269937
    Abstract: An integrated circuit device includes a semiconductor substrate, and a semiconductor strip extending into the semiconductor substrate. A first and a second dielectric region are on opposite sides of, and in contact with, the semiconductor strip. Each of the first dielectric region and the second dielectric region includes a first portion level with the semiconductor strip, and a second portion lower than the semiconductor strip. The second portion further includes a portion overlapped by the semiconductor strip.
    Type: Grant
    Filed: January 8, 2018
    Date of Patent: April 23, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tai-Chun Huang, Chih-Tang Peng, Chia-Wei Chang, Ming-Hua Yu, Hao-Ming Lien, Chao-Cheng Chen, Tze-Liang Lee
  • Interconnect structure and method
    Patent number: 10269627
    Abstract: A device, structure, and method are provided whereby an insert layer is utilized to provide additional support for surrounding dielectric layers. The insert layer may be applied between two dielectric layers. Once formed, trenches and vias are formed within the composite layers, and the insert layer will help to provide support that will limit or eliminate undesired bending or other structural motions that could hamper subsequent process steps, such as filling the trenches and vias with conductive material.
    Type: Grant
    Filed: August 25, 2017
    Date of Patent: April 23, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Cheng Chou, Chih-Chien Chi, Chung-Chi Ko, Yao-Jen Chang, Chen-Yuan Kao, Kai-Shiang Kuo, Po-Cheng Shih, Tze-Liang Lee, Jun-Yi Ruan
  • MOS Devices with Non-Uniform P-type Impurity Profile
    Publication number: 20190115470
    Abstract: An integrated circuit structure include a semiconductor substrate, a gate stack over the semiconductor substrate, and a recess extending into the semiconductor substrate, wherein the recess is adjacent to the gate stack. A silicon germanium region is disposed in the recess, wherein the silicon germanium region has a first p-type impurity concentration. A silicon cap substantially free from germanium is overlying the silicon germanium region. The silicon cap has a second p-type impurity concentration greater than the first p-type impurity concentration.
    Type: Application
    Filed: December 7, 2018
    Publication date: April 18, 2019
    Inventors: Hsueh-Chang Sung, Tsz-Mei Kwok, Kun-Mu Li, Tze-Liang Lee, Chii-Horng Li
  • Method for Manufacturing a Semiconductor Device
    Publication number: 20190103272
    Abstract: A method of manufacturing a semiconductor device includes depositing a dielectric layer over a substrate, performing a first patterning to form an opening in the dielectric layer, and depositing an oxide film over and contacting the dielectric layer and within the opening in the dielectric layer. The oxide film is formed from multiple precursors that are free of O2, and depositing the oxide film includes forming a plasma of a first precursor of the multiple precursors.
    Type: Application
    Filed: April 30, 2018
    Publication date: April 4, 2019
    Inventors: Wan-Lin Tsai, Jung-Hau Shiu, Ching-Yu Chang, Jen Hung Wang, Shing-Chyang Pan, Tze-Liang Lee
  • Via Patterning Using Multiple Photo Multiple Etch
    Publication number: 20190096752
    Abstract: A method includes forming a dielectric layer, forming a photo resist over the dielectric layer, forming a first mask layer over the photo resist, and forming a second mask layer over the first mask layer. A first-photo-first-etching is performed to form a first via pattern in the second mask layer, wherein the first-photo-first-etching stops on a top surface of the first mask layer. A second-photo-second-etching is performed to form a second via pattern in the second mask layer, wherein the second-photo-second-etching stops on the top surface of the first mask layer. The first mask layer is etched using the second mask layer as an etching mask. The photo resist and the dielectric layer are etched to simultaneously transfer the first via pattern and the second via pattern into the dielectric layer.
    Type: Application
    Filed: November 26, 2018
    Publication date: March 28, 2019
    Inventors: Jung-Hau Shiu, Chung-Chi Ko, Tze-Liang Lee, Wen-Kuo Hsieh, Yu-Yun Peng
  • Semiconductor Device and Method
    Publication number: 20190088499
    Abstract: A method includes forming a metal gate structure over a first fin, where the metal gate structure is surrounded by a first dielectric material, and forming a capping layer over the first dielectric material, where an etch selectivity between the metal gate structure and the capping layer is over a pre-determined threshold. The method also includes forming a patterned hard mask layer over the first fin and the first dielectric material, where an opening of the patterned hard mask layer exposes a portion of the metal gate structure and a portion of the capping layer. The method further includes removing the portion of the metal gate structure exposed by the opening of the patterned hard mask layer.
    Type: Application
    Filed: November 2, 2018
    Publication date: March 21, 2019
    Inventors: Ming-Jie Huang, Syun-Ming Jang, Ryan Chia-Jen Chen, Ming-Ching Chang, Shu-Yuan Ku, Tai-Chun Huang, Chunyao Wang, Tze-Liang Lee, Chi On Chui
  • SOURCE AND DRAIN STRESSORS WITH RECESSED TOP SURFACES
    Publication number: 20190035931
    Abstract: An integrated circuit structure includes a gate stack over a semiconductor substrate, and a silicon germanium region extending into the semiconductor substrate and adjacent to the gate stack. The silicon germanium region has a top surface, with a center portion of the top surface recessed from edge portions of the top surface to form a recess. The edge portions are on opposite sides of the center portion.
    Type: Application
    Filed: September 24, 2018
    Publication date: January 31, 2019
    Inventors: Kun-Mu Li, Tsz-Mei Kwok, Hsueh-Chang Sung, Chii-Horng Li, Tze-Liang Lee
  • MOS Devices Having Epitaxy Regions with Reduced Facets
    Publication number: 20190013405
    Abstract: An integrated circuit structure includes a gate stack over a semiconductor substrate, and an opening extending into the semiconductor substrate, wherein the opening is adjacent to the gate stack. A first silicon germanium region is disposed in the opening, wherein the first silicon germanium region has a first germanium percentage. A second silicon germanium region is over the first silicon germanium region. The second silicon germanium region comprises a portion in the opening. The second silicon germanium region has a second germanium percentage greater than the first germanium percentage. A silicon cap substantially free from germanium is over the second silicon germanium region.
    Type: Application
    Filed: August 27, 2018
    Publication date: January 10, 2019
    Inventors: Hsueh-Chang Sung, Kun-Mu Li, Tze-Liang Lee, Chii-Horng Li, Tsz-Mei Kwok
  • HIGH ASPECT RATIO GAP FILL
    Publication number: 20190006227
    Abstract: The present disclosure describes a method of forming a dielectric layer or a dielectric stack on a photoresist layer while minimizing or avoiding damage to the photoresist. In addition, the dielectric layer or dielectric stack can till high-aspect ratio openings and can be removed with etching. The dielectric layer or dielectric stack can be deposited with a conformal, low-temperature chemical vapor deposition process or a conformal, low-temperature atomic layer deposition process that utilizes a number of precursors and plasmas or reactant gases.
    Type: Application
    Filed: October 5, 2017
    Publication date: January 3, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wan-Lin TSAI, Shing-Chyang Pan, Sung-En Lin, Tze-Liang Lee, Jung-Hau Shiu, Jen Hung Wang
  • Apparatus and method for spatial atomic layer deposition
    Patent number: 10161039
    Abstract: A semiconductor fabrication apparatus includes a processing chamber, a wafer stage configured in the processing chamber, a first chemical delivery mechanism configured in the processing chamber to provide a first chemical to a first reaction zone in the processing chamber, and a second chemical delivery mechanism configured in the processing chamber to provide a second chemical to a second reaction zone in the processing chamber. The second chemical delivery mechanism includes an edge chemical injector and a first radial chemical injector both configured to deliver the second chemical to the second reaction zone.
    Type: Grant
    Filed: January 22, 2018
    Date of Patent: December 25, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Anthony Lin, Ching-Lun Lai, Pei-Ren Jeng, Tze-Liang Lee
  • MOS devices with non-uniform p-type impurity profile
    Patent number: 10158016
    Abstract: An integrated circuit structure include a semiconductor substrate, a gate stack over the semiconductor substrate, and a recess extending into the semiconductor substrate, wherein the recess is adjacent to the gate stack. A silicon germanium region is disposed in the recess, wherein the silicon germanium region has a first p-type impurity concentration. A silicon cap substantially free from germanium is overlying the silicon germanium region. The silicon cap has a second p-type impurity concentration greater than the first p-type impurity concentration.
    Type: Grant
    Filed: March 6, 2017
    Date of Patent: December 18, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsueh-Chang Sung, Tsz-Mei Kwok, Kun-Mu Li, Tze-Liang Lee, Chii-Horng Li
  • Wafer holder with tapered region
    Patent number: 10159112
    Abstract: An apparatus, a system and a method are disclosed. An exemplary method includes providing a wafer process chamber and a plurality of radiant heat elements under the wafer process chamber, receiving a wafer holder configured to be used in the wafer process chamber, and processing a wafer located on the wafer holder in the wafer process chamber. The wafer holder includes: a wafer contact portion including an upper surface and a lower surface, an exterior portion including an upper surface and a lower surface, and a tapered region formed in the wafer contact portion.
    Type: Grant
    Filed: June 25, 2015
    Date of Patent: December 18, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yi-Hung Lin, Li-Ting Wang, Tze-Liang Lee
  • FinFETs and methods of forming the same
    Patent number: 10157997
    Abstract: A method includes forming a dummy gate stack on a substrate, forming a spacer layer on the dummy gate stack, forming an etch stop layer over the spacer layer and the dummy gate stack, the etch stop layer comprising a vertical portion and a horizontal portion, and performing a densification process on the etch stop layer, wherein the horizontal portion is denser than the vertical portion after the densification process The method also includes forming an oxide layer over the etch stop layer, performing an anneal process on the oxide layer and the etch stop layer, wherein the vertical portion has a greater concentration of oxygen than the horizontal portion after the anneal process.
    Type: Grant
    Filed: August 2, 2017
    Date of Patent: December 18, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Bor Chiuan Hsieh, Chung-Ting Ko, Ting-Gang Chen, Chien Chung Huang, Tai-Chun Huang, Tze-Liang Lee