Abstract: A heat-dissipating substrate with a coating structure is provided. The heat-dissipating substrate includes at least two layers. A base layer is a heat dissipation layer, and one or more sputtered layers are formed on the heat dissipation layer. The sputtered layer has a corrosion resistant property, a soldering ability, or a sintering ability. A thickness of the sputtered layer is less than 5000 nm.

Abstract: A water-cooling device with a composite heat-dissipating structure is provided, which includes a casing, a main heat-dissipating structure and a layered heat-dissipating structure. The casing is used for accommodating a working fluid, and the casing includes a heat-dissipating substrate. The main heat-dissipating structure includes a plurality of heat-dissipating fins arranged vertically and in parallel to each other that are connected to the heat-dissipating substrate. The layered heat-dissipating structure includes a plurality of horizontal heat-dissipating bodies arranged horizontally and in parallel to each other that are connected to the plurality of heat-dissipating fins arranged vertically and in parallel to each other, and a distance between the plurality of horizontal heat-dissipating bodies arranged horizontally and in parallel to each other is greater than or equal to a distance between the plurality of heat-dissipating fins arranged vertically and in parallel to each other.

Abstract: An IGBT module with a heat dissipation structure having a specific layer thickness ratio includes a layer of IGBT chips, an upper bonding layer, a circuit layer, an insulating layer, and a heat dissipation layer. The insulating layer is disposed on the heat dissipation layer, the circuit layer is disposed on the insulating layer, the upper bonding layer is disposed on the circuit layer, and the layer of IGBT chips is disposed on the upper bonding layer. A thickness of the insulating layer is less than 0.2 mm, a thickness of the circuit layer is between 1.5 mm and 3 mm, and a thickness ratio of the circuit layer to the insulating layer is greater than or equal to 7.5:1.

Abstract: A heat-dissipating substrate structure with built-in conductive circuits is provided. The heat-dissipating substrate structure includes an electrically insulating layer, a first metal layer, a second metal layer, and a heat-dissipating layer. The first metal layer and the second metal layer are disposed on the heat-dissipating layer at an interval. The electrically insulating layer encloses and is in contact with side walls of the first metal layer and side walls of the second metal layer, such that a top wall of the first metal layer and a top wall of the second metal layer are exposed from the electrically insulating layer, and at least one of the conductive circuits extends through at least one of the side wall of the first metal layer and the side wall of the second metal layer and is embedded in the electrically insulating layer.

Abstract: A power module package structure includes, from top to bottom, a layer of power chips, an upper bonding layer, a thermally-conductive and electrically-insulating composite layer, and a heat dissipation layer. The thermally-conductive and electrically-insulating composite layer contains an insulating layer and an upper copper layer that is formed on the insulating layer. One or more layers of upper packaging materials are covered over the layer of power chips and the upper bonding layer and are in contact with an upper surface of the upper copper layer. One or more layers of lower packaging materials are in contact with the insulating layer and are in contact with sidewalls of the upper copper layer. The lower packaging material has a higher rigidity than the upper packaging material.

Abstract: A lift-off structure for a sprayed thin layer on a substrate surface and a method for the same are provided. The lift-off structure for the sprayed thin layer on the substrate surface includes a base layer and a lifted-off sprayed thin layer. The lifted-off sprayed thin layer is formed on the base layer. The lifted-off sprayed thin layer has at least one ablated new side surface formed thereon, and the at least one ablated new side surface has an inclination angle.

Abstract: A copper-alloy heat-dissipation structure with a milled surface includes a heat-dissipation main body. The heat-dissipation main body has a first milled surface and a second milled surface that are opposite to each other, where heat-dissipation fins are formed on the first milled surface, and the maximum height roughness Rz of the second milled surface ranges from 2.5 ?m to 5.4 ?m.

Abstract: An IGBT module with a heat dissipation structure and a method for manufacturing the same are provided. The IGBT module with a heat dissipation structure includes a layer of IGBT chips, a bonding layer, a thick copper layer, a thermally-conductive and electrically-insulating layer, and a heat dissipation layer. A portion of the thermally-conductive and electrically-insulating layer is made of a polymer composite material, and a remaining portion of the thermally-conductive and electrically-insulating layer is made of a ceramic material. The thick copper layer is bonded onto the thermally-conductive and electrically-insulating layer by hot pressing. A fillet is formed at a bottom edge of the thick copper layer, and the bottom edge of the thick copper layer is embedded into the thermally-conductive and electrically-insulating layer.

Abstract: An enclosed heat sink with a brazed structure is provided. The enclosed heat sink with the brazed structure includes a first brazing plane formed on a top surface of a first brazing body, and a second brazing plane formed on a bottom surface of a second brazing body. The first brazing plane and the second brazing plane are pressed and brazed together, so that the first brazing body and the second brazing body enclose a cavity. A plurality of channels are formed on the first brazing plane, and each of the channels is neither perpendicular nor parallel to the first brazing plane.

Abstract: An enclosed heat sink with a side wall structure is provided. The side wall structure includes a welding body having a first welding plane and a side wall structure having a second welding plane. The first welding plane and the second welding plane are pressured and welded to each other, such that the welding body and the side wall structure encapsulate a cavity. A width of the second welding plane is smaller than a width between two side surfaces of the side wall structure.

Abstract: An IGBT module with a heat dissipation structure includes a first layer of chips, a second layer of chips, a first bonding layer, a second bonding layer, a first copper layer, a second copper layer, a first polymer composite layer, a second polymer composite layer, a first ceramic layer, a second ceramic layer, and a heat dissipation layer. The first ceramic layer is partially formed on the heat dissipation layer and corresponds in position and in area to the first layer of chips, and the second ceramic layer is partially formed on the heat dissipation layer and corresponds in position and in area to the second layer of chips.

Abstract: An alloy structure having a low magnesium content surface includes an alloy layer having an original magnesium content and a magnesium-deficient layer formed on the alloy layer, and the magnesium-deficient layer has a low magnesium content surface.

Abstract: An IGBT module with a heat dissipation structure includes a first layer of chips, a second layer of chips, a first bonding layer, a second bonding layer, a first copper layer, a second copper layer, a first polymer composite layer, a second polymer composite layer, a first ceramic layer, a second ceramic layer, and a heat dissipation layer. The first ceramic layer is partially formed on the heat dissipation layer and corresponds in position and in area to the first layer of chips, and the second ceramic layer is partially formed on the heat dissipation layer and corresponds in position and in area to the second layer of chips.

Abstract: An IGBT module with a heat dissipation structure includes a first layer of chips, a second layer of chips, a first bonding layer, a second bonding layer, a first copper layer, a second copper layer, a thermally-conductive and electrically-insulating layer, and a heat dissipation layer. The first copper layer and the second copper layer are disposed on the thermally-conductive and electrically-insulating layer at intervals. The first layer of chips and the second layer of chips are disposed on the first bonding layer and the second bonding layer, respectively. The number of chips of the first layer of chips is larger than that of the second layer of chips such that the first copper layer has a greater thickness than the second copper layer.

Abstract: A copper-alloy heat-dissipation structure with a milled surface includes a heat-dissipation main body. The heat-dissipation main body has a first milled surface and a second milled surface that are opposite to each other, where heat-dissipation fins are formed on the first milled surface, and the maximum height roughness Rz of the second milled surface ranges from 1.5 ?m to 5.4 ?m.

Abstract: An IGBT module with a heat dissipation structure includes a first layer of chips, a second layer of chips, a first bonding layer, a second bonding layer, a first copper layer, a second copper layer, a thermally-conductive and electrically-insulating layer, and a heat dissipation layer. The first copper layer and the second copper layer are disposed on the thermally-conductive and electrically-insulating layer at intervals. The first layer of chips and the second layer of chips are disposed on the first bonding layer and the second bonding layer, respectively. The number of chips of the first layer of chips is larger than that of the second layer of chips such that the first copper layer has a greater thickness than the second copper layer.

Abstract: An IGBT module with an improved heat dissipation structure includes a layer of IGBT chips, a bonding layer, a thick copper layer, a polymer composite layer, a thermal spray layer, and a heat dissipation layer. The thermal spray layer is disposed on the heat dissipation layer. The polymer composite layer is disposed on the thermal spray layer. The thick copper layer is disposed on the polymer composite layer. The bonding layer is disposed on the thick copper layer. The layer of IGBT chips is disposed on the bonding layer.

Abstract: An IGBT module with an improved heat dissipation structure includes a layer of IGBT chips, a bonding layer, a thick copper layer, a polymer composite layer, a thermal spray layer, and a heat dissipation layer. The thermal spray layer is disposed on the heat dissipation layer. The polymer composite layer is disposed on the thermal spray layer. The thick copper layer is disposed on the polymer composite layer. The bonding layer is disposed on the thick copper layer. The layer of IGBT chips is disposed on the bonding layer.

Abstract: An IGBT heat dissipation structure includes a layer of IGBT chips, a bonding layer, a cold spray layer, a thermal spray layer, and a heat dissipation layer. The thermal spray layer is disposed on top of the heat dissipation layer. The cold spray layer is disposed on top of the thermal spray layer. The bonding layer is disposed on top of the cold spray layer, and the layer of IGBT chips is disposed on top of the bonding layer.

Abstract: An IGBT heat dissipation structure includes a layer of IGBT chips, a bonding layer, a cold spray layer, a thermal spray layer, and a heat dissipation layer. The thermal spray layer is disposed on top of the heat dissipation layer. The cold spray layer is disposed on top of the thermal spray layer. The bonding layer is disposed on top of the cold spray layer, and the layer of IGBT chips is disposed on top of the bonding layer.