Patents by Inventor Tze-Yang Yeh

Tze-Yang Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • COPPER-ALLOY HEAT-DISSIPATION STRUCTURE WITH MILLED SURFACE
    Publication number: 20210180889
    Abstract: A copper-alloy heat-dissipation structure with a milled surface includes a heat-dissipation main body. The heat-dissipation main body has a first milled surface and a second milled surface that are opposite to each other, where heat-dissipation fins are formed on the first milled surface, and the maximum height roughness Rz of the second milled surface ranges from 1.5 ?m to 5.4 ?m.
    Type: Application
    Filed: December 12, 2019
    Publication date: June 17, 2021
    Inventors: MIN-HORNG LIU, TZE-YANG YEH, CHUN-LUNG WU
  • ALLOY STRUCTURE HAVING A LOW MAGNESIUM CONTENT SURFACE
    Publication number: 20210180166
    Abstract: An alloy structure having a low magnesium content surface includes an alloy layer having an original magnesium content and a magnesium-deficient layer formed on the alloy layer, and the magnesium-deficient layer has a low magnesium content surface.
    Type: Application
    Filed: December 13, 2019
    Publication date: June 17, 2021
    Inventors: CHING-MING YANG, TZE-YANG YEH, CHUN-LUNG WU
  • IGBT module with heat dissipation structure having copper layers of different thicknesses
    Patent number: 11037857
    Abstract: An IGBT module with a heat dissipation structure includes a first layer of chips, a second layer of chips, a first bonding layer, a second bonding layer, a first copper layer, a second copper layer, a thermally-conductive and electrically-insulating layer, and a heat dissipation layer. The first copper layer and the second copper layer are disposed on the thermally-conductive and electrically-insulating layer at intervals. The first layer of chips and the second layer of chips are disposed on the first bonding layer and the second bonding layer, respectively. The number of chips of the first layer of chips is larger than that of the second layer of chips such that the first copper layer has a greater thickness than the second copper layer.
    Type: Grant
    Filed: December 12, 2019
    Date of Patent: June 15, 2021
    Assignee: AMULAIRE THERMAL TECHNOLOGY, INC.
    Inventors: Tzu-Hsuan Wang, Tze-Yang Yeh, Chun-Lung Wu
  • IGBT module with improved heat dissipation structure
    Patent number: 10861768
    Abstract: An IGBT module with an improved heat dissipation structure includes a layer of IGBT chips, a bonding layer, a thick copper layer, a polymer composite layer, a thermal spray layer, and a heat dissipation layer. The thermal spray layer is disposed on the heat dissipation layer. The polymer composite layer is disposed on the thermal spray layer. The thick copper layer is disposed on the polymer composite layer. The bonding layer is disposed on the thick copper layer. The layer of IGBT chips is disposed on the bonding layer.
    Type: Grant
    Filed: June 16, 2019
    Date of Patent: December 8, 2020
    Assignee: AMULAIRE THERMAL TECHNOLOGY, INC.
    Inventors: Tze-Yang Yeh, Chun-Lung Wu
  • IGBT MODULE WITH IMPROVED HEAT DISSIPATION STRUCTURE
    Publication number: 20200185303
    Abstract: An IGBT module with an improved heat dissipation structure includes a layer of IGBT chips, a bonding layer, a thick copper layer, a polymer composite layer, a thermal spray layer, and a heat dissipation layer. The thermal spray layer is disposed on the heat dissipation layer. The polymer composite layer is disposed on the thermal spray layer. The thick copper layer is disposed on the polymer composite layer. The bonding layer is disposed on the thick copper layer. The layer of IGBT chips is disposed on the bonding layer.
    Type: Application
    Filed: June 16, 2019
    Publication date: June 11, 2020
    Inventors: TZE-YANG YEH, CHUN-LUNG WU
  • IGBT HEAT DISSIPATION STRUCTURE
    Publication number: 20190363033
    Abstract: An IGBT heat dissipation structure includes a layer of IGBT chips, a bonding layer, a cold spray layer, a thermal spray layer, and a heat dissipation layer. The thermal spray layer is disposed on top of the heat dissipation layer. The cold spray layer is disposed on top of the thermal spray layer. The bonding layer is disposed on top of the cold spray layer, and the layer of IGBT chips is disposed on top of the bonding layer.
    Type: Application
    Filed: November 6, 2018
    Publication date: November 28, 2019
    Inventors: TZE-YANG YEH, CHUN-LUNG WU
  • IGBT heat dissipation structure
    Patent number: 10475723
    Abstract: An IGBT heat dissipation structure includes a layer of IGBT chips, a bonding layer, a cold spray layer, a thermal spray layer, and a heat dissipation layer. The thermal spray layer is disposed on top of the heat dissipation layer. The cold spray layer is disposed on top of the thermal spray layer. The bonding layer is disposed on top of the cold spray layer, and the layer of IGBT chips is disposed on top of the bonding layer.
    Type: Grant
    Filed: November 6, 2018
    Date of Patent: November 12, 2019
    Assignee: Amulaire thermal technology, INC.
    Inventors: Tze-Yang Yeh, Chun-Lung Wu