Abstract: A quantum dot composite structure and a method for forming the same are provided. The quantum dot composite structure includes: a glass particle including a glass matrix and a plurality of quantum dots located in the glass matrix, wherein at least one of the plurality of quantum dots includes an exposed surface in the glass matrix; and an inorganic protective layer disposed on the glass particle and covering the exposed surface.

Abstract: In the present disclosure embodiments, a phosphate phosphor including an activation center of trivalent chromium and a light emitting device are provided. The light emitting device includes a light source and the above mentioned phosphate phosphor, such that the phosphate phosphor is excited by the light source and emits a wide spectrum of the infrared light. The light emitting device with wide emission spectrum of the infrared light may be widely applied in detecting devices.

Abstract: A pixel package is provided. The pixel package includes a flexible redistribution layer and a plurality of LED chips arranged on the surface of the flexible redistribution layer in a flip-chip manner. The pixel package also includes a plurality of light-adjusting layers respectively disposed on the LED chips. The pixel package further includes a plurality of flexible composite laminates disposed on the surface of the flexible redistribution layer and between the LED chips.

Abstract: A light-emitting diode device is provided. First and second green conversion materials are respectively configured to convert a blue light emitted from a blue light-emitting diode to generate a first green light with a first wavelength range and a first wavelength FWHM, and a second green light with a second wavelength range and a second wavelength FWHM. The second wavelength FWHM is smaller than the first wavelength FWHM. A lower bound of the first wavelength range is smaller than a lower bound of the second wavelength range, and an upper bound of the second wavelength range is greater than an upper bound of the first wavelength range. An output light emitted from the light-emitting diode device has a spectral characteristic of less than 50% of TÜV Rheinland and more than 90% of wide color gamut.

Abstract: A display device includes a substrate, a plurality of white light-emitting units, and a color filter layer. The white light-emitting units are arranged on the substrate at intervals, and the white light-emitting units are chip scale package (CSP). The color filter layer is above the white light-emitting units. Each of the white light-emitting units includes a light-emitting diode chip and a wavelength conversion film. The wavelength conversion film directly covers a top surface and side surfaces of the light-emitting diode chip, and the wavelength conversion film converts light emitted by the light-emitting diode chip into white light.

Abstract: The disclosure provides a light emitting diode structure, including a substrate, a first semiconductor layer, a light emitting layer, a second semiconductor layer, a semiconductor contacting layer, a first conductive layer and a second conductive layer. The first semiconductor layer is disposed on the substrate. The first semiconductor includes a first thickness structure and a second thickness structure, in which the first thickness structure is thicker than the second thickness structure. The light emitting layer is disposed on the first thickness structure. The second semiconductor layer is disposed on the light emitting layer The semiconductor contacting layer is disposed on the second thickness structure, in which the vertical projections of the semiconductor contacting layer and the light emitting layer on the substrate don't overlap nor contact. A doping type of the semiconductor contacting layer is the same as the first semiconductor layer.

Abstract: A wavelength conversion material comprises a luminous core and a covering layer. The luminous core comprises a quantum dot or a fluorescent powder. The covering layer covers the luminous core. The covering layer is an amorphous material, and an outer surface of the covering layer has at least one sharp corner.

Abstract: A wavelength converting material includes a luminous core and a first protective layer. The first protective layer covers the luminous core, in which the first protective layer includes silicon dioxide, and in silicon atoms of the silicon dioxide, the silicon atom of the zeroth configuration (Q0) does not connect with any siloxy group, and the silicon atom of the first configuration (Q1) connects with one siloxy group, and the silicon atom of the second configuration (Q2) connects with two siloxy groups, and the silicon atom of the third configuration (Q3) connects with three siloxy groups, and the silicon atom of the fourth configuration (Q4) connects with four siloxy groups, in which a total amount of the silicon atoms of the third configuration and the fourth configuration is greater than a total amount of the silicon atoms of the zeroth configuration, the first configuration and the second configuration.

Abstract: A display device includes a substrate, a plurality of white light-emitting units, and a color filter layer. The white light-emitting units are arranged on the substrate at intervals, and the white light-emitting units are chip scale package (CSP). The color filter layer is above the white light-emitting units. Each of the white light-emitting units includes a light-emitting diode chip and a wavelength conversion film. The wavelength conversion film directly covers a top surface and side surfaces of the light-emitting diode chip, and the wavelength conversion film converts light emitted by the light-emitting diode chip into white light.

Abstract: A light-emitting package structure includes a light transmissive adhesive layer, a substrate, and at least one light-emitting diode chip. The light transmissive adhesive layer includes a first surface and a second surface facing away from the first surface. The substrate is on the first surface of the light transmissive adhesive layer. The light-emitting diode chip is on the second surface of the light transmissive adhesive layer. The light transmissive adhesive layer has a first portion and a second portion on the second surface, the first portion surrounds the second portion, a vertical projection area of the second portion on the substrate at least entirely covers a vertical projection area of the light-emitting diode chip on the substrate, and a thickness of the second portion is smaller than or equal to a thickness of the first portion.

Abstract: A low blue light backlight module configured to emit a white light is provided. The low blue light backlight module includes a first light-emitting element, a second light-emitting element, a third light-emitting element and a fourth light-emitting element. The first light-emitting element is configured to emit a first light having a peak emission wavelength of about 610-660 nm. The second light-emitting element is configured to emit a second light having a peak emission wavelength of about 520-550 nm. The third light-emitting element is configured to emit a third light having a peak emission wavelength of about 480-580 nm. The fourth light-emitting element is configured to emit a fourth light having a peak emission wavelength of about 445-470 nm. The white light has an emission spectrum, and an area ratio of the spectrum under wavelength of 415-455 nm to the spectrum under wavelength of 400-500 nm is below 50%.

Abstract: In the present disclosure embodiments, a phosphate phosphor including an activation center of trivalent chromium and a light emitting device are provided. The light emitting device includes a light source and the above mentioned phosphate phosphor, such that the phosphate phosphor is excited by the light source and emits a wide spectrum of the infrared light. The light emitting device with wide emission spectrum of the infrared light may be widely applied in detecting devices.

Abstract: A wavelength converting material includes a luminous core and a first protective layer. The first protective layer covers the luminous core, and the first protective layer includes aluminum silicate. The aluminum silicate includes a plurality of silicon atoms, each of the silicon atoms is one of a zeroth configuration Q4(0Al), first configuration Q4(1Al), second configuration Q4(2Al), third configuration Q4(3Al), and fourth configuration Q4(4Al). The silicon atoms of the zeroth configuration do not connect with aluminum oxide group, and the silicon atoms of the first, second, third, and fourth configurations respectively connect with one, two, three, and four aluminum oxide group(s). A total number of the silicon atoms of the third configuration and the fourth configuration is larger than a total number of the silicon atoms of the zeroth configuration, the first configuration, and the second configuration.

Abstract: A light-emitting diode device is provided. First and second green conversion materials are respectively configured to convert a blue light emitted from a blue light-emitting diode to generate a first green light with a first wavelength range and a first wavelength FWHM, and a second green light with a second wavelength range and a second wavelength FWHM. The second wavelength FWHM is smaller than the first wavelength FWHM. A lower bound of the first wavelength range is smaller than a lower bound of the second wavelength range, and an upper bound of the second wavelength range is greater than an upper bound of the first wavelength range. An output light emitted from the light-emitting diode device has a spectral characteristic of less than 50% of TÜV Rheinland and more than 90% of wide color gamut.

Abstract: The wavelength conversion material includes a general formula (I) MmAaBbCcDdEe:ESxREy and satisfies a condition (II) that a proportion of D for the wavelength conversion material greater than or equal to 50%. M is selected from a group consisting of Ca, Sr and Ba. A is selected from a group consisting of elements Mg, Mn, Zn and Cd. B is selected from a group consisting of elements B, Al, Ga and In. C is selected from a group consisting of Si, Ge, Ti and Hf. D is selected from a group consisting of elements O, S and Se. E is selected from a group consisting of elements N and P. ES is selected from a group consisting of divalent Eu, Sm and Yb. RE is selected from a group consisting of trivalent Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Tm.

Abstract: A light conversion material includes a general formula and complies with a condition. The general formula is MmAaCcEe:ESxREy. M is at least one element selected from a group, and 2?m?3. A is at least one element selected from a group, and 0.01?a?1. C is at least one element selected from a group, and 1?c?9, E is at least one element selected from a group, and 5?e?7. ES is at least one element selected from a group, and 0?x?3. RE is at least one element selected from a group, and 0?y?3. The condition (2) is m+x+y=3.

Abstract: A light-emitting package structure includes a light transmissive adhesive layer, a substrate, and at least one light-emitting diode chip. The light transmissive adhesive layer includes a first surface and a second surface facing away from the first surface. The substrate is on the first surface of the light transmissive adhesive layer. The light-emitting diode chip is on the second surface of the light transmissive adhesive layer. The light transmissive adhesive layer has a first portion and a second portion on the second surface, the first portion surrounds the second portion, a vertical projection area of the second portion on the substrate at least entirely covers a vertical projection area of the light-emitting diode chip on the substrate, and a thickness of the second portion is smaller than or equal to a thickness of the first portion.

Abstract: A display device includes a substrate, a plurality of white light-emitting units, and a color filter layer. The white light-emitting units are arranged on the substrate at intervals, and the white light-emitting units are chip scale package (CSP). The color filter layer is above the white light-emitting units. Each of the white light-emitting units includes a light-emitting diode chip and a wavelength conversion film. The wavelength conversion film directly covers a top surface and side surfaces of the light-emitting diode chip, and the wavelength conversion film converts light emitted by the light-emitting diode chip into white light.

Abstract: A wavelength converting material includes a luminous core and a first protective layer. The first protective layer covers the luminous core, and the first protective layer includes aluminum silicate. The aluminum silicate includes a plurality of silicon atoms, each of the silicon atoms is one of a zeroth configuration Q4(0Al), first configuration Q4(1Al), second configuration Q4(2Al), third configuration Q4(3Al), and fourth configuration Q4(4Al). The silicon atoms of the zeroth configuration do not connect with aluminum oxide group, and the silicon atoms of the first, second, third, and fourth configurations respectively connect with one, two, three, and four aluminum oxide group(s). A total number of the silicon atoms of the third configuration and the fourth configuration is larger than a total number of the silicon atoms of the zeroth configuration, the first configuration, and the second configuration.

Abstract: A nitride phosphor, and a light emitting device and a backlight module employing the nitride phosphor. The nitride phosphor has the formula (Sr1-x, Bax)LiAl3N4-nOn:Eu3+y, Eu2+z with 0<x<1 and y/z>0.1. The light emitting device includes a light emitting diode configured to emit a first light and the nitride phosphor configured to convert a portion of the first light to a second light. A backlight module includes a printed circuit board and a plurality of the light emitting devices.