Abstract: The present disclosure provides a light emitting structure including a blue light source, a first fluorescent material layer and a second fluorescent material layer. The blue light source has a light emitting surface. The first fluorescent material layer covers the light emitting surface of the blue light source. The first fluorescent material layer consists of a first fluorescent material. An excitation band of the first fluorescent material is in a blue wave band, and an emission band of the first fluorescent material is in a green wave band. The second fluorescent material layer covers the first fluorescent material layer. The second fluorescent material layer consists of a second fluorescent material. An excitation band of the second fluorescent material is in a green wave band, and an emission band of the second fluorescent material is in a red wave band. A light device and a backlight module are also provided herein.

Abstract: A wavelength-converting film and a light emitting device and a display device using the same are disclosed. The wavelength converting film comprises a fluoride phosphor powder with a Mn4+ as an activator, wherein the fluoride phosphor powder with the Mn4+ as the activator comprises a sheet-like crystal and has a chemical formula of A2[MF6]:Mn4+, wherein A is Li, Na, K, Rb, Cs, NH4, or a combination thereof, and M is Ge, Si, Sn, Ti, Zr, or a combination thereof.

Abstract: A fluoride phosphor including a sheet-like crystal and a manufacturing method and an application therefore are disclosed. The fluoride phosphor has a chemical formula A2[MF6]:Mn4+, with Mn4+ as an activator. The A is Li, Na, K, Rb, Cs, NH4 or a combination thereof. The M is Ge, Si, Sn, Ti, Zr or a combination thereof. The sheet-like crystal has a thickness d. A crystal flat surface of the sheet-like crystal has a maximum length a. The maximum length a is defined as a distance between two end points on an edge of the crystal flat surface and farthest from each other. 8?a/d?35.

Abstract: A light-enhancement device includes a wavelength conversion member and a wavelength controlling element. The wavelength conversion member includes a light-transmissive substrate and wavelength conversion material which is disposed within the light-transmissive substrate for converting a portion of light with a first wavelength into another light with a second wavelength. The wavelength controlling element is disposed on a surface of the light-transmissive substrate for reflecting another portion of the light with the first wavelength into the light-transmissive substrate and enabling the portion of the light with the second wavelength to pass through the wavelength controlling element. A roughness of the surface of the light-transmissive substrate facing towards the wavelength controlling element is configured to be 0-1 ?m.

Abstract: A light emitting diode chip scale packaging structure and a direct type backlight module are disclosed. The light emitting diode chip scale packaging structure includes a light emitting diode chip, a wavelength converting layer, a diffusion structure and a lens. The wavelength converting layer is disposed on the light emitting diode chip and directly contacting the light emitting diode chip, and the wavelength converting layer includes phosphor powders. The diffusion structure covers the light emitting diode chip and the wavelength converting layer, a ratio of a height of the diffusion structure to a width of the diffusion structure is 1:2 to 5:4, and the lens covers the diffusion structure. An outer surface of the lens is a free-form surface, and a material of the lens is different from a material of the diffusion structure.

Abstract: The present invention provides a method for fabricating a fluoride phosphor. A first solution is formed by dissolving potassium fluoride (KF) and either K2MnF6 or KMnO4 in a hydrofluoric acid solution. A second solution is formed by mixing a surfactant and a silane. The first solution and the second solution are mixed to form a precipitate. The precipitate is collected after the first solution and the second solution are mixed. The present invention also provides a fluoride phosphor represented by the following formula: K2[SiF6]:Mn4+. The fluoride phosphor has a particle size in a range of about 1 ?m to about 10 ?m. The present invention further provides a light-emitting apparatus and backlight module employing the same.

Abstract: A light emitting diode chip scale packaging structure is disclosed. The light emitting diode chip scale packaging structure comprises a light emitting diode chip and a lens. The lens covers the light emitting diode chip. A curve of an outer surface of the lens in a cross-section view substantially complies with a polynomial of: z=?i=0nai*yi, A center point of the curve corresponding to the light emitting diode chip is a zero point of y-z coordinate axes. z is a variable of vertical axis of the curve. y is a variable of horizontal axis of the curve. ai is a constant coefficient in a term of ith degree. 3<n?6.

Abstract: A lighting apparatus includes a wavelength converting apparatus. The wavelength converting apparatus includes a hollow tube and a wavelength converting material. The hollow tube has an accommodating chamber. The wavelength converting material is positioned in the accommodating chamber.

Abstract: The present disclosure provides a method for fabricating a phosphor. A first solution is formed by dissolving potassium hexafluorogermanate (K2GeF6) and either K2MnF6 or KMnO4 in a hydrofluoric acid solution. An anhydrous ethanol is added to the first solution to make a total concentration of fluoride ions of potassium hexafluorogermanate (K2GeF6), hydrofluoric acid, and either K2MnF6 or KMnO4 equal to or less than 48M to form a precipitate. Afterward, the precipitate is collected.

Abstract: A wavelength-converting material and an application thereof are provided. The wavelength-converting material includes an all-inorganic perovskite quantum dot having a chemical formula of CsPb(ClaBr1-a-bIb)3, wherein 0?a?1, 0?b?1.

Abstract: A quantum dot composite material and a manufacturing method and an application thereof are provided. The quantum dot composite material includes an all-inorganic perovskite quantum dot and a modification protection on a surface of the all-inorganic perovskite quantum dot. The all-inorganic perovskite quantum dot has a chemical formula of CsPb(ClaBr1-a-bIb)3, wherein 0?a?1, 0?b?1.

Abstract: The present invention provides a method for fabricating a fluoride phosphor. A first solution is formed by dissolving potassium fluoride (KF) and either K2MnF6 or KMnO4 in a hydrofluoric acid solution. A second solution is formed by mixing a surfactant and a silane. The first solution and the second solution are mixed to form a precipitate. The precipitate is collected after the first solution and the second solution are mixed. The present invention also provides a fluoride phosphor represented by the following formula: K2[SiF6]:Mn4+. The fluoride phosphor has a particle size in a range of about 1 ?m to about 10 ?m. The present invention further provides a light-emitting apparatus and backlight module employing the same.

Abstract: A light-emitting diode package is provided. The light-emitting diode package includes a lead-frame, a reflective cup and a die. The lead-frame is made of a silver-free material. The reflective cup has the cavity. The die is disposed on the lead-frame in a face-down orientation, and is further electrically connected to the lead-frame and located within the cavity.

Abstract: The present disclosure provides a light emitting structure including a blue light source, a first fluorescent material layer and a second fluorescent material layer. The blue light source has a light emitting surface. The first fluorescent material layer covers the light emitting surface of the blue light source. The first fluorescent material layer consists of a first fluorescent material. An excitation band of the first fluorescent material is in a blue wave band, and an emission band of the first fluorescent material is in a green wave band. The second fluorescent material layer covers the first fluorescent material layer. The second fluorescent material layer consists of a second fluorescent material. An excitation band of the second fluorescent material is in a green wave band, and an emission band of the second fluorescent material is in a red wave band. A light device and a backlight module are also provided herein.

Abstract: A light-emitting diode device includes a shell with a recess, wherein the shell does not contain metal oxide. A plurality of lead frames extends from the bottom of the recess to the outside of the shell. At least an UV light-emitting diode (LED) chip is disposed on the bottom of the recess and is electrically connected to the lead frames, wherein the UV LED chip has a wavelength range of 200 nm-400 nm. In addition, an encapsulation adhesive fills the recess to cover the UV LED chip.

Abstract: The present invention provides a phosphor with a preferred orientation represented by the following formula: A2[MF6]:Mn4+, wherein A is selected from a group consisting of Li, Na, K, Rb, Cs, and NH4, M is selected from a group consisting of Ge, Si, Sn, Ti, and Zr. The preferred orientation is a (001)/(011) preferred orientation. The present invention also provides a method for fabricating the above phosphor. The present invention further provides a light-emitting element package structure employing the same.

Abstract: The present invention provides a phosphor represented by the following formula: K2[Ge1-xF6]:Mnx4+, wherein 0<x<0.2. The phosphor has a hexagonal phase of a P63mc space group. The present invention also provides a method for fabricating the above phosphor. The present invention further provides a light-emitting device and a backlight module employing the same.

Abstract: A light-emitting diode (LED) module and a lamp using the same are provided. The LED module includes a substrate and several light-emitting packages. Each light-emitting package includes an optical wavelength conversion layer and a light-emitting diode having a first light-output surface, a bonding surface, and several second light-output surfaces. The bonding surface is opposite the first light-output surface and connected to the substrate. The second light-output surfaces are between the first light-output surface and the bonding surface. The optical wavelength conversion layer covers the first and second light-output surfaces. The distance between the bonding surface and the top surface of the optical wavelength conversion layer represents a light source thickness. The distance between two adjacent light-emitting packages represents a spacing of light sources. Specifically, the ratio of the spacing of light sources to the light source thickness is between 1 and 6.3.

Abstract: The present invention provides a light emitting device, which comprises an epitaxial stack structure, a II/V group compound contact layer directly formed on the epitaxial stack structure, a protrusion or recess type structure directly formed on the II/V group compound contact layer, and a conductive layer covering the protrusion or recess type structure.

Abstract: A method of treating a substrate includes forming a plurality of nicks on an upper surface of the substrate by an electromagnetic wave without using a mask, wherein sidewalls of each nick have fusion formed thereon; roughening the sidewalls by removing the fusion; and forming an epitaxial multi-layer structure on the upper surface and the nicks. The roughened sidewalls of each nick comprise an average roughness equal to or larger than 1 nm.