Abstract: A wavelength converting material includes a luminous core and a first protective layer. The first protective layer covers the luminous core, in which the first protective layer includes silicon dioxide, and in silicon atoms of the silicon dioxide, the silicon atom of the zeroth configuration (Q0) does not connect with any siloxy group, and the silicon atom of the first configuration (Q1) connects with one siloxy group, and the silicon atom of the second configuration (Q2) connects with two siloxy groups, and the silicon atom of the third configuration (Q3) connects with three siloxy groups, and the silicon atom of the fourth configuration (Q4) connects with four siloxy groups, in which a total amount of the silicon atoms of the third configuration and the fourth configuration is greater than a total amount of the silicon atoms of the zeroth configuration, the first configuration and the second configuration.

Abstract: A quantum dot composite material and a manufacturing method and an application thereof are provided. The quantum dot composite material includes an all-inorganic perovskite quantum dot and a modification protection on a surface of the all-inorganic perovskite quantum dot. The all-inorganic perovskite quantum dot has a chemical formula of CsPb(ClaBr1-a-bIb)3, wherein 0?a?1, 0?b?1.

Abstract: A perovskite luminescent nanocrystal has a chemical formula represented by: Cs4BX6, wherein B includes one or more selected from the group consisting of Ge, Pb, Sn, Sb, Bi, Cu, and Mn, and X includes one or more selected from the group consisting of Cl, Br, and I, wherein the Cs4BX6 perovskite luminescent nanocrystal has a pure phase, and a molar ratio of Cs to B (Cs/B) in the Cs4BX6 perovskite luminescent nanocrystal is greater than 1 and less than 4.

Abstract: An infrared emitting fluoride phosphor and an infrared light emitting device are provided. The infrared emitting fluoride phosphor includes an activation center of Cr3+. The infrared light emitting device includes a light source and the infrared emitting fluoride phosphor. The light source is disposed to emit a first light, and the first light has a wavelength of 400-700 nm. The infrared emitting fluoride phosphor is configured to be excited by the first light to emit a first infrared ray. The first infrared ray has a wavelength of 650-1000 nm. The infrared light emitting device has a broad emission wavelength, such that it can be applied in variety of sensing device.

Abstract: A perovskite luminescent nanocrystal has a chemical formula represented by: Cs4BX6, wherein B includes one or more selected from the group consisting of Ge, Pb, Sn, Sb, Bi, Cu, and Mn, and X includes one or more selected from the group consisting of Cl, Br, and I, wherein the Cs4BX6 perovskite luminescent nanocrystal has a pure phase, and a molar ratio of Cs to B (Cs/B) in the Cs4BX6 perovskite luminescent nanocrystal is greater than 1 and less than 4.

Abstract: A nitride phosphor, and a light emitting device and a backlight module employing the nitride phosphor. The nitride phosphor has the formula (Sr1-x, Bax)LiAl3N4-nOn:Eu3+y, Eu2+z with 0<x<1 and y/z>0.1. The light emitting device includes a light emitting diode configured to emit a first light and the nitride phosphor configured to convert a portion of the first light to a second light. A backlight module includes a printed circuit board and a plurality of the light emitting devices.

Abstract: A light emitting diode package includes a light emitting diode chip, a wavelength conversion layer, and a light attenuating layer. The light emitting diode chip emits a first light. The wavelength conversion layer includes a plurality of quantum dots. The light attenuating layer is disposed between the light emitting diode chip and the wavelength conversion layer. The light attenuating layer is configured to attenuate an intensity of the first light beam and then emits a second light beam which will be partially absorbed by the quantum dots. A wavelength of the first light beam is substantially the same wavelength of the second light beam.

Abstract: A quantum dot composite material and a manufacturing method and an application thereof are provided. The quantum dot composite material includes an all-inorganic perovskite quantum dot and a modification protection on a surface of the all-inorganic perovskite quantum dot. The all-inorganic perovskite quantum dot has a chemical formula of CsPb(ClaBr1-a-bIb)3, wherein 0?a?1, 0?b?1.

Abstract: A wavelength-converting film and a light emitting device and a display device using the same are disclosed. The wavelength converting film comprises a fluoride phosphor powder with a Mn4+ as an activator, wherein the fluoride phosphor powder with the Mn4+ as the activator comprises a sheet-like crystal and has a chemical formula of A2[MF6]:Mn4+, wherein A is Li, Na, K, Rb, Cs, NH4, or a combination thereof, and M is Ge, Si, Sn, Ti, Zr, or a combination thereof.

Abstract: A quantum dot composite material and a manufacturing method and an application thereof are provided. The quantum dot composite material includes an all-inorganic perovskite quantum dot and a modification protection on a surface of the all-inorganic perovskite quantum dot. The all-inorganic perovskite quantum dot has a chemical formula of CsPb(ClaBr1-a-bIb)3, wherein 0?a?1, 0?b?1.

Abstract: A light-enhancement device includes a wavelength conversion member and a wavelength controlling element. The wavelength conversion member includes a light-transmissive substrate and wavelength conversion material which is disposed within the light-transmissive substrate for converting a portion of light with a first wavelength into another light with a second wavelength. The wavelength controlling element is disposed on a surface of the light-transmissive substrate for reflecting another portion of the light with the first wavelength into the light-transmissive substrate and enabling the portion of the light with the second wavelength to pass through the wavelength controlling element. A roughness of the surface of the light-transmissive substrate facing towards the wavelength controlling element is configured to be 0-1 ?m.

Abstract: An infrared emitting fluoride phosphor and an infrared light emitting device are provided. The infrared emitting fluoride phosphor includes an activation center of Cr3+. The infrared light emitting device includes a light source and the infrared emitting fluoride phosphor. The light source is disposed to emit a first light, and the first light has a wavelength of 400-700 nm. The infrared emitting fluoride phosphor is configured to be excited by the first light to emit a first infrared ray. The first infrared ray has a wavelength of 650-1000 nm. The infrared light emitting device has a broad emission wavelength, such that it can be applied in variety of sensing device.

Abstract: The present disclosure provides a method for fabricating a phosphor. A first solution is formed by dissolving potassium hexafluorogermanate (K2GeF6) and either K2MnF6 or KMnO4 in a hydrofluoric acid solution. An anhydrous ethanol is added to the first solution to make a total concentration of fluoride ions of potassium hexafluorogermanate (K2GeF6), hydrofluoric acid, and either K2MnF6 or KMnO4 equal to or less than 48M to form a precipitate. Afterward, the precipitate is collected.

Abstract: A light emitting diode chip scale packaging structure and a direct type backlight module are disclosed. The light emitting diode chip scale packaging structure includes a light emitting diode chip, a wavelength converting layer, a diffusion structure and a lens. The wavelength converting layer is disposed on the light emitting diode chip and directly contacting the light emitting diode chip, and the wavelength converting layer includes phosphor powders. The diffusion structure covers the light emitting diode chip and the wavelength converting layer, a ratio of a height of the diffusion structure to a width of the diffusion structure is 1:2 to 5:4, and the lens covers the diffusion structure. An outer surface of the lens is a free-form surface, and a material of the lens is different from a material of the diffusion structure.

Abstract: An emission spectrum of a manganese-doped red fluoride phosphor includes a zero phonon line crest and a crest. The zero phonon line crest has a first peak emission wavelength and a first intensity (I1). The crest has a second peak emission wavelength and a maximum intensity (Imax) except for the zero phonon line crest. The second peak emission wavelength is greater than the first peak emission wavelength. A ratio (I1/Imax) of the first intensity (I1) to the maximum intensity (Imax) is ranged from about 0.2 to about 8 such that a luminous decay time of the manganese-doped red fluoride phosphor is less than 10 ms.

Abstract: A light emitting diode chip scale packaging structure is disclosed. The light emitting diode chip scale packaging structure comprises a light emitting diode chip and a lens. The lens covers the light emitting diode chip. A curve of an outer surface of the lens in a cross-section view substantially complies with a polynomial of: z=?i=0nai*yi, A center point of the curve corresponding to the light emitting diode chip is a zero point of y-z coordinate axes. z is a variable of vertical axis of the curve. y is a variable of horizontal axis of the curve. ai is a constant coefficient in a term of ith degree. 3<n?6.

Abstract: The present invention provides a phosphor represented by the following formula: K2[Ge1-xF6]:Mnx4+, wherein 0<x<0.2. The phosphor has a hexagonal phase of a P63mc space group. The present invention also provides a method for fabricating the above phosphor. The present invention further provides a light-emitting device and a backlight module employing the same.

Abstract: A fluoride phosphor including a sheet-like crystal and a manufacturing method and an application therefore are disclosed. The fluoride phosphor has a chemical formula A2[MF6]:Mn4+, with Mn4+ as an activator. The A is Li, Na, K, Rb, Cs, NH4 or a combination thereof. The M is Ge, Si, Sn, Ti, Zr or a combination thereof. The sheet-like crystal has a thickness d. A crystal flat surface of the sheet-like crystal has a maximum length a. The maximum length a is defined as a distance between two end points on an edge of the crystal flat surface and farthest from each other. 8?a/d?35.

Abstract: The present invention provides a phosphor with a preferred orientation represented by the following formula: A2[MF6]:Mn4+, wherein A is selected from a group consisting of Li, Na, K, Rb, Cs, and NH4, M is selected from a group consisting of Ge, Si, Sn, Ti, and Zr. The preferred orientation is a (001)/(011) preferred orientation. The present invention also provides a method for fabricating the above phosphor. The present invention further provides a light-emitting element package structure employing the same.

Abstract: A light-emitting diode (LED) module and a lamp using the same are provided. The LED module includes a substrate and several light-emitting packages. Each light-emitting package includes an optical wavelength conversion layer and a light-emitting diode having a first light-output surface, a bonding surface, and several second light-output surfaces. The bonding surface is opposite the first light-output surface and connected to the substrate. The second light-output surfaces are between the first light-output surface and the bonding surface. The optical wavelength conversion layer covers the first and second light-output surfaces. The distance between the bonding surface and the top surface of the optical wavelength conversion layer represents a light source thickness. The distance between two adjacent light-emitting packages represents a spacing of light sources. Specifically, the ratio of the spacing of light sources to the light source thickness is between 1 and 6.3.