Abstract: Topographic planarization methods for a lithography process are provided. The method includes providing a substrate having a topography surface. A planarization stack is formed over the topography surface of the substrate. The optical material stack includes a first optical material layer and an overlying second optical material layer, and the first optical material layer has a higher etching rate than the second optical material layer with respect to an etchant. The planarization stack is etched using the etchant to entirely remove the second optical material layer and partially remove the first optical material layer, such that the remaining first optical material layer has a substantially planar surface over the topography surface of the substrate.

Abstract: A light emitting device includes a first substrate, a second substrate and a plurality of micro epitaxial structures. The second substrate is disposed opposite to the first substrate. The micro epitaxial structures are periodically disposed on the substrate and located between the first substrate and the second substrate. A coefficient of thermal expansion of the first substrate is CTE1, a coefficient of thermal expansion of the second substrate is CTE2, a side length of each of the micro epitaxial structures is W, W is in the range between 1 micrometer and 100 micrometers, and a pitch of any two adjacent micro epitaxial structures is P, wherein W/P=0.1 to 0.95, and CTE2/CTE1=0.8 to 1.2.

Abstract: A light emitting device includes a first substrate, a second substrate and a plurality of micro epitaxial structures. The second substrate is disposed opposite to the first substrate. The micro epitaxial structures are periodically disposed on the substrate and located between the first substrate and the second substrate. A coefficient of thermal expansion of the first substrate is CTE1, a coefficient of thermal expansion of the second substrate is CTE2, a side length of each of the micro epitaxial structures is W, W is in the range between 1 micrometer and 100 micrometers, and a pitch of any two adjacent micro epitaxial structures is P, wherein W/P=0.1 to 0.95, and CTE2/CTE1=0.8 to 1.2.

Abstract: A light emitting device includes a substrate, a plurality of micro light emitting chips and a plurality of conductive bumps. The substrate has a plurality of pads. The micro light emitting chips are disposed on the substrate in dispersion. Each of the micro light emitting chips includes an N-type semiconductor layer, an active layer and a P-type semiconductor layer. The conductive bumps are disposed corresponding to the micro light emitting chips and located between the micro light emitting chips and the substrate. The micro light emitting chips are electrically connected to the pads of the substrate by the conductive bumps. The orthogonal projection area of each of the conductive bumps on the substrate is 1.05 times to 1.5 times of the orthogonal projection area of each of the micro light emitting chips on the substrate.

Abstract: A light emitting device includes a carrier, a plurality of light emitting diode chips and a plurality of buffer pads. Each light emitting diode chip includes a first type semiconductor layer, an active layer, a second type semiconductor layer, a via hole and a plurality of bonding pads. The via hole sequentially penetrates through the first type semiconductor layer, the active layer and a portion of the second type semiconductor layer. The first type semiconductor layer, the active layer, the second type semiconductor layer and the via hole define a epitaxial structure. The buffer pads are disposed between the carrier and the second type semiconductor layer, wherein the buffer pads is with Young's modulus of 2˜10 GPa, the second bonding pad is disposed within the via hole to contact the second type semiconductor layer, and the epitaxial structure is electrically bonded to the receiving substrate through the bonding pads.

Abstract: A light emitting device includes a substrate, a plurality of micro light emitting chips and a plurality of conductive bumps. The substrate has a plurality of pads. The micro light emitting chips are disposed on the substrate in dispersion. Each of the micro light emitting chips includes an N-type semiconductor layer, an active layer and a P-type semiconductor layer. The conductive bumps are disposed corresponding to the micro light emitting chips and located between the micro light emitting chips and the substrate. The micro light emitting chips are electrically connected to the pads of the substrate by the conductive bumps. An orthogonal projection area of each of the conductive bumps on the substrate is greater than an orthogonal projection area of each of the micro light emitting chips on the substrate.

Abstract: The present invention provides a door access management method applicable to a building. The building includes a plurality of areas. The door access management method includes setting access information of an access card, the access information marking accessible entrances of the access card in the building; arranging an electronic lock on a door for controlling access of an entrance of a corresponding area in the building; the electronic lock storing information of the entrance controlled by the electronic lock; the electronic lock sensing the access card for receiving the access information of the access card; the electronic lock comparing the access information with the information of the entrance controlled by the electronic lock; and unlocking the electronic lock when an accessible entrance marked by the access information corresponds to the information of the entrance controlled by the electronic lock.

Abstract: A light emitting device includes a substrate, micro light emitting chips, reflective structures and conductive bumps. The substrate has pads. The micro light emitting chips are disposed on the substrate separately, and each of the micro light emitting chips includes a light emitting layer, a first type electrode and a second type electrode isolated from the first type electrode, wherein the first type electrode and the second type electrode are disposed on one side of the light emitting layer. The reflective structures are physically separated from each other and spaced apart from the substrate. Each of the reflective structures is disposed around one of the micro light emitting chips. The conductive bumps and located between the micro light emitting chips and the substrate, wherein the micro light emitting chips are electrically boned to the pads of the substrate through the conductive bumps.

Abstract: A method for manufacturing a light emitting device is provided. Multiple epitaxial structures and multiple bonding pads formed thereon are formed on a growth substrate. A first adhesive layer is formed on the growth substrate, wherein the first adhesive layer encapsulates the epitaxial structures and the bonding pads. A first substrate is provided on the first adhesive layer. The growth substrate is removed, so as to expose the epitaxial structures and the first adhesive layer. A second substrate and a second adhesive layer disposed thereon are provided, wherein the epitaxial structures are adhered on the second substrate by the second adhesive layer. The first adhesive layer and the first substrate are removed.

Abstract: A light emitting device includes a substrate, a plurality of micro light emitting chips, a plurality of reflective structures and a plurality of conductive bumps. The substrate has a plurality of pads. The micro light emitting chips are disposed on the substrate in dispersion, and each of the micro light emitting chips includes a light emitting layer. The reflective structures are disposed around the micro light emitting chips in dispersion, and at least cover the micro light emitting layers of the light emitting chips. The conductive bumps are disposed corresponding to the micro light emitting chips and located between the micro light emitting chips and the substrate, wherein the micro light emitting chips are electrically connected to the pads of the substrate through the conductive bumps.

Abstract: The present invention relates to a light emitting diode (LED) and a flip-chip packaged LED device. The present invention provides an LED device. The LED device is flipped on and connected electrically with a packaging substrate and thus forming the flip-chip packaged LED device. The LED device mainly has an Ohmic-contact layer and a planarized buffer layer between a second-type doping layer and a reflection layer. The Ohmic-contact layer improves the Ohmic-contact characteristics between the second-type doping layer and the reflection layer without affecting the light emitting efficiency of the LED device and the flip-chip packaged LED device. The planarized buffer layer id disposed between the Ohmic-contact layer and the reflection layer for smoothening the Ohmic-contact layer and hence enabling the reflection layer to adhere to the planarized buffer layer smoothly.

Abstract: A light emitting device includes a first substrate, a second substrate and a plurality of micro epitaxial structures. The second substrate is disposed opposite to the first substrate. The micro epitaxial structures are periodically disposed on the substrate and located between the first substrate and the second substrate. A coefficient of thermal expansion of the first substrate is CTE1, a coefficient of thermal expansion of the second substrate is CTE2, a side length of each of the micro epitaxial structures is W, W is in the range between 1 micrometer and 100 micrometers, and a pitch of any two adjacent micro epitaxial structures is P, wherein W/P=0.1 to 0.95,and CTE2/CTE1=0.8 to 1.2.

Abstract: A method for manufacturing a light emitting device is provided. Multiple epitaxial structures and multiple bonding pads formed thereon are formed on a growth substrate. A first adhesive layer is formed on the growth substrate, wherein the first adhesive layer encapsulates the epitaxial structures and the bonding pads. A first substrate is provided on the first adhesive layer. The growth substrate is removed, so as to expose the epitaxial structures and the first adhesive layer. A second substrate and a second adhesive layer disposed thereon are provided, wherein the epitaxial structures are adhered on the second substrate by the second adhesive layer. The first adhesive layer and the first substrate are removed.

Abstract: A light emitting device includes a carrier, at least one epitaxial structure, at least one buffer pad and at least one bonding pad. The epitaxial structure is disposed on the carrier. The buffer pad is disposed between the carrier and the epitaxial structure, wherein the epitaxial structure is temporarily bonded to the carrier by the buffer pad. The bonding pad is disposed on the epitaxial structure, wherein the epitaxial structure is electrically connected to a receiving substrate by the bonding pad.

Abstract: A method for transferring light-emitting elements onto a package substrate includes: providing a light-emitting unit including a supporting substrate and a plurality of light-emitting elements, each of the light-emitting elements being removably connected to the supporting substrate and having a surface opposite to the supporting substrate; disposing the light-emitting unit spacingly above a package substrate in such a manner that the surface of each of the light-emitting elements faces the package substrate; and disconnecting the light-emitting elements from the supporting substrate to allow the light-emitting elements to fall onto the package substrate by gravity, so as to connect the light-emitting elements with the package substrate in a non-contact transferring method.

Abstract: A method for transferring light-emitting elements onto a package substrate includes: providing a light-emitting unit including a temporary substrate and light-emitting elements; disconnecting the light-emitting elements from the temporary substrate to allow the light-emitting elements to float on a fluid; adjusting spacings between the light-emitting elements to have a predetermined size by controlling flow of the fluid; placing a package substrate into the fluid, followed by aligning the light-emitting elements with connecting pads of the package substrate so as to correspondingly place the light-emitting elements on the connecting pads; and removing the package substrate with the light-emitting elements from the fluid.

Abstract: A light emitting device includes a substrate, a plurality of micro light emitting chips, a plurality of reflective structures and a plurality of conductive bumps. The substrate has a plurality of pads. The micro light emitting chips are disposed on the substrate in dispersion, and each of the micro light emitting chips includes a light emitting layer. The reflective structures are disposed around the micro light emitting chips in dispersion, and at least cover the micro light emitting layers of the light emitting chips. The conductive bumps are disposed corresponding to the micro light emitting chips and located between the micro light emitting chips and the substrate, wherein the micro light emitting chips are electrically connected to the pads of the substrate through the conductive bumps.

Abstract: A method for transferring light-emitting elements onto a package substrate includes: providing a light-emitting unit including a temporary substrate and light-emitting elements; disconnecting the light-emitting elements from the temporary substrate to allow the light-emitting elements to float on a fluid; adjusting spacings between the light-emitting elements to have a predetermined size by controlling flow of the fluid; placing a package substrate into the fluid, followed by aligning the light-emitting elements with connecting pads of the package substrate so as to correspondingly place the light-emitting elements on the connecting pads; and removing the package substrate with the light-emitting elements from the fluid.

Abstract: A light emitting device includes a substrate, a plurality of micro light emitting chips and a plurality of conductive bumps. The substrate has a plurality of pads. The micro light emitting chips are disposed on the substrate in dispersion. Each of the micro light emitting chips includes an N-type semiconductor layer, an active layer and a P-type semiconductor layer. The conductive bumps are disposed corresponding to the micro light emitting chips and located between the micro light emitting chips and the substrate. The micro light emitting chips are electrically connected to the pads of the substrate by the conductive bumps. An orthogonal projection area of each of the conductive bumps on the substrate is greater than an orthogonal projection area of each of the micro light emitting chips on the substrate.

Abstract: A method for transferring light-emitting elements onto a package substrate includes: providing a light-emitting unit including a supporting substrate and a plurality of light-emitting elements, each of the light-emitting elements being removably connected to the supporting substrate and having a surface opposite to the supporting substrate; disposing the light-emitting unit spacingly above a package substrate in such a manner that the surface of each of the light-emitting elements faces the package substrate; and disconnecting the light-emitting elements from the supporting substrate to allow the light-emitting elements to fall onto the package substrate by gravity, so as to connect the light-emitting elements with the package substrate in a non-contact transferring method.