Abstract: A light emitting module including a circuit carrier and a plurality of light emitting devices is provided. The circuit carrier includes a first circuit layer, a second circuit layer, a dielectric layer and a plurality of conductive vias. The first circuit layer and the second circuit layer are located at two opposite sides of the dielectric layer. The conductive vias pass through the dielectric layer and two opposite end portions of each of the conductive vias are respectively connected to the first circuit layer and the second circuit layer. The light emitting devices are electrically bonded to the first circuit layer. Moreover, the light emitting devices are disposed in a device disposing area of the circuit carrier and the conductive vias are arranged outside the device disposing area. A display device is also provided.

Abstract: A micro light emitting diode including an epitaxial layer, an insulation layer, a first electrode, and a second electrode is provided. The insulation layer is located on a surface of the epitaxial layer and has a first through hole and a second through hole. The first electrode is electrically connected to a first-type semiconductor layer of the epitaxial layer through the first through hole and has a plurality of first-electrode flat portions. The first-electrode flat portions respectively have different horizontal heights relative to the epitaxial layer. The second electrode is electrically connected to a second-type semiconductor layer of the epitaxial layer through the second through hole and has a plurality of second-electrode flat portions. The second-electrode flat portions respectively have different horizontal heights relative to the epitaxial layer. A display panel is also provided.

Abstract: A light emitting device includes a carrier, a plurality of light emitting diode chips and a plurality of buffer pads. Each light emitting diode chip includes a first type semiconductor layer, an active layer, a second type semiconductor layer, a via hole and a plurality of bonding pads. The via hole sequentially penetrates through the first type semiconductor layer, the active layer and a portion of the second type semiconductor layer. The first type semiconductor layer, the active layer, the second type semiconductor layer and the via hole define a epitaxial structure. The buffer pads are disposed between the carrier and the second type semiconductor layer, wherein the buffer pads is with Young's modulus of 2˜10 GPa, the second bonding pad is disposed within the via hole to contact the second type semiconductor layer, and the epitaxial structure is electrically bonded to the receiving substrate through the bonding pads.

Abstract: A light emitting diode (LED) chip has an inclined notch. The inclined notch has at least one inclined surface. The LED chip includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, a light emitting layer, a first electrode, and a second electrode. The light emitting layer is located between the first-type doped semiconductor layer and the second-type doped semiconductor layer. The inclined surface is inclined with respect to the light emitting layer. The first electrode is electrically connected to the first-type doped semiconductor layer. The second electrode is electrically connected to the second-type doped semiconductor layer. The inclined notch is disposed in the light emitting layer.

Abstract: The present disclosure provides NTD developers and corresponding lithography techniques that can overcome resolution, line edge roughness (LER), and sensitivity (RLS) tradeoff barriers particular to extreme ultraviolet (EUV) technologies, thereby achieving high patterning fidelity for advanced technology nodes. An exemplary lithography method includes forming a negative tone resist layer over a workpiece; exposing the negative tone resist layer to EUV radiation; and removing an unexposed portion of the negative tone resist layer in a negative tone developer, thereby forming a patterned negative tone resist layer. The negative tone developer includes an organic solvent having a log P value greater than 1.82. The organic solvent is an ester acetate derivative represented by R1COOR2. R1 and R2 are hydrocarbon chains having four or less carbon atoms. In some implementations, R1, R2, or both R1 and R2 are propyl functional groups, such as n-propyl, isopropyl, or 2-methylpropyl.

Abstract: A display panel including a backplane, a first bonding layer, a plurality of micro light-emitting diodes, a first insulation layer, and a second bonding layer is provided. The first bonding layer is disposed on the backplane. The micro light-emitting diodes are disposed on the first bonding layer and are electrically connected to the first bonding layer. The first insulation layer is located between any adjacent two of the micro light-emitting diodes. The first insulation layer has a concave-convex surface. The second bonding layer is disposed on the micro light-emitting diodes and the first insulation layer and is electrically connected to the micro light-emitting diodes. A micro light-emitting diode apparatus including a substrate, a plurality of micro light-emitting diodes, and a first insulation layer is provided. The first insulation layer is located between any adjacent two of the micro light-emitting diodes. The first insulation layer has a concave-convex surface.

Abstract: A method of transferring micro devices is provided. A carrier substrate including a buffer layer and a plurality of micro devices is provided. The buffer layer is located between the carrier substrate and the micro devices. The micro devices are separated from one another and positioned on the carrier substrate through the buffer layer. A receiving substrate contacts the micro devices disposed on the carrier substrate. A temperature of at least one of the carrier substrate and the receiving substrate is changed after the micro devices contact the receiving substrate. At least a portion of the micro devices are transferred from the carrier substrate onto the receiving substrate after changing the temperature of at least one of the carrier substrate and the receiving substrate.

Abstract: A method of transferring micro devices is provided. A carrier substrate including a buffer layer and a plurality of micro devices is provided. The buffer layer is located between the carrier substrate and the micro devices. The micro devices are separated from one another and positioned on the carrier substrate through the buffer layer. A receiving substrate contacts the micro devices disposed on the carrier substrate. A temperature of at least one of the carrier substrate and the receiving substrate is changed, so that at least a portion of the micro devices are released from the carrier substrate and transferred onto the receiving substrate. A number of the at least a portion of the micro devices is between 1000 and 2000000.

Abstract: A micro LED including an epitaxial stack layer, a first electrode and a second electrode is provided. A lower surface of the first electrode is in contact with an upper surface of a first semiconductor layer of the epitaxial stack layer. An upper surface of the second electrode is in contact with a lower surface of a second semiconductor layer of the epitaxial stack layer. The lower surface of the first electrode substantially coincides with the upper surface of the first semiconductor layer. The upper surface of the second electrode substantially coincides with the lower surface of the second semiconductor layer. Furthermore, a display panel is also provided.

Abstract: A display panel including a backplane, a first bonding layer, a plurality of micro light-emitting diodes, a first insulation layer, and a second bonding layer is provided. The first bonding layer is disposed on the backplane. The micro light-emitting diodes are disposed on the first bonding layer and are electrically connected to the first bonding layer. The first insulation layer is located between any adjacent two of the micro light-emitting diodes. The first insulation layer has a concave-convex surface. The second bonding layer is disposed on the micro light-emitting diodes and the first insulation layer and is electrically connected to the micro light-emitting diodes. A micro light-emitting diode apparatus including a substrate, a plurality of micro light-emitting diodes, and a first insulation layer is provided. The first insulation layer is located between any adjacent two of the micro light-emitting diodes. The first insulation layer has a concave-convex surface.

Abstract: A method for expanding spacings in a light-emitting element array includes the following steps of: providing a light-emitting element array unit including a stretchable supporting film, and a plurality of light-emitting elements disposed on the stretchable supporting film and arranged into a two-dimensional array; stretching the stretchable supporting film along a first direction and a second direction. The first direction and the second direction respectively correspond to a row direction and a column direction of the two-dimensional array.

Abstract: A light emitting device includes a substrate, a plurality of micro light emitting chips and a plurality of conductive bumps. The substrate has a plurality of pads. The micro light emitting chips are disposed on the substrate in dispersion. Each of the micro light emitting chips includes an N-type semiconductor layer, an active layer and a P-type semiconductor layer. The conductive bumps are disposed corresponding to the micro light emitting chips and located between the micro light emitting chips and the substrate. The micro light emitting chips are electrically connected to the pads of the substrate by the conductive bumps. The orthogonal projection area of each of the conductive bumps on the substrate is 1.05 times to 1.5 times of the orthogonal projection area of each of the micro light emitting chips on the substrate.

Abstract: A light emitting component includes an epitaxial structure, a first electrode and a second electrode. The epitaxial structure includes a first type semiconductor layer, a second type semiconductor layer and a light emitting layer. The light emitting layer is located between the first type semiconductor layer and the second type semiconductor layer. The first electrode is connected to the first type semiconductor layer and at least part of the first electrode is located at a first side of the epitaxial structure. The second electrode is connected to the second type semiconductor layer and located at the first side of the epitaxial structure. A part of the second electrode is located between the second type semiconductor layer and a part of the first electrode.

Abstract: A display panel including a backplane and a plurality of micro LEDs is provided. The backplane includes a plurality of sub-pixels. Each of the sub-pixels has N sets of bonding pad. Each set of bonding pads includes a first electrical pad and X second electrical pads. N is an integer of 1˜3, X is an integer of 2˜4. The micro LEDs are respectively disposed in the sub-pixels, and the micro LED is electrically connected to one corresponding set of bonding pads of the N bonding pad sets. A first electrical carrier and a second electrical carrier are provided by the backplane to each of the micro LEDs through the one corresponding set of bonding pads.

Abstract: A micro light-emitting diode chip includes an epitaxial structure, a first electrode, and a second electrode. The epitaxial structure includes a first type doped semiconductor layer, a light emitting layer, and a second type doped semiconductor layer, and the epitaxial structure further includes a first surface, side surface and a second surface opposite to the first surface. The first electrode is disposed on the first surface, and is electrically connected to the first type doped semiconductor layer and contacted the first type doped semiconductor layer on a portion of the first surface. The second electrode is disposed on the first surface and the side surface, and is electrically connected to the second type doped semiconductor layer and contacted the second type doped semiconductor layer on a portion of the side surface. A length of a diagonal of the micro light-emitting diode chip is greater than 1 micrometer and is less than or equal to 140 micrometers.

Abstract: A micro light emitting diode chip having a plurality of light-emitting regions, including a semiconductor epitaxial structure, a first electrode and a plurality of second electrodes disposed at interval is provided. The semiconductor epitaxial structure includes a first-type doped semiconductor layer, a plurality of second-type doped semiconductor layers and a plurality of light-emitting layers disposed at interval. The light-emitting layers are located between the first-type doped semiconductor layer and the second-type doped semiconductor layer. The light-emitting layers are located in the light-emitting regions respectively and electrically contact to the first-type doped semiconductor layer. The first electrode is electrically connected and contacts to the first-type doped semiconductor layers. The second electrodes are electrically connected to the second-type doped semiconductor layers. Furthermore, a display panel is also provided.

Abstract: A display device including a backplane, a plurality of light-emitting devices, a first distributed Bragg reflector layer and a second distributed Bragg reflector layer is provided. The light-emitting devices are disposed on the backplane. The first distributed Bragg reflector layer is disposed between the backplane and the light-emitting devices. The light-emitting devices are disposed between the first distributed Bragg reflector layer and the second distributed Bragg reflector layer. A projected area of the first distributed Bragg reflector layer on the backplane is larger than a projected area of one of the light-emitting devices on the backplane or a projected area of the second distributed Bragg reflector layer on the backplane is larger than a projected area of one light-emitting device on the backplane.

Abstract: A light emitting diode (LED) chip has an inclined notch. The inclined notch has at least one inclined surface. The LED chip includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, a light emitting layer, a first electrode, and a second electrode. The light emitting layer is located between the first-type doped semiconductor layer and the second-type doped semiconductor layer. The inclined surface is inclined with respect to the light emitting layer. The first electrode is electrically connected to the first-type doped semiconductor layer. The second electrode is electrically connected to the second-type doped semiconductor layer. The inclined notch is disposed in the light emitting layer.

Abstract: A manufacturing method of a display including the following steps is provided. Firstly, a back plate, a first transfer platform and a second transfer platform are provided, wherein a plurality of first light-emitting devices are disposed on the first transfer platform, and a plurality of second light-emitting devices are disposed on the second transfer platform. Secondly, a plurality of first bonding layers are formed at a plurality of first positions of the back plate. Then, the first transfer platform and the back plate are correspondingly docked, so that the first light-emitting devices are bonded on the first positions through the first bonding layers. After that, a plurality of second bonding layers are formed at a plurality of second positions of the back plate. Finally, the second transfer platform and the back plate are correspondingly docked, so that the second light-emitting devices are bonded on the second positions through the second bonding layers.

Abstract: A display including a back plate, a plurality of light emitting devices and a plurality of compensating light emitting devices is provided. The back plate has a plurality of pixels and at least one compensated region. The compensated region includes some of the pixels. The light emitting devices are arranged in all the pixels on the back plate. The compensated light emitting devices are disposed on the back plate and located in each pixel in the compensated region respectively. At least one of the pixels in the compensated region is dead pixel. Besides, a repair method of the display is also provided.