Abstract: A method and apparatus for producing full-color luminescent monolithic semiconductor devices. Each portion of the device is bandgap engineered by using different dopants to change the direct bandgap of selected areas of each region, thereby allowing that region to produce different wavelengths of emitted light at high efficiencies.

Abstract: A method for producing Group III nitride films with high indium content and superior optical quality. The Group III nitride film will produce light in the ultraviolet, blue, green, yellow, and red spectral regions. This will enable fabrication of full-color displays and produce a reliable white light source. A metal organic chemical vapor deposition (MOCVD) process in combination with a photochemical process reduces the growth temperature required to produce optical quality Group III nitride films.

Abstract: A germanium-based field effect transistor has a passivation layer of aluminum oxide below a germanium channel and aluminum oxide gate oxide layer formed over the channel. The aluminum oxide layers are treated to reduce the density of surface state impurities, particularly arsenic released in the oxide layer as a result of forming the oxide layer. The low surface state germanium channel has very low phase noise and is suitable for use as a local oscillator in a heterodyne receiver.

Abstract: A relaxor ferroelectric composition that has the components lead magnesium niobate, lead titanate, and lead magnesium tungstate. The components are preferably present in relative molar amounts of (1-x-y) lead magnesium niobate, (x) lead titanate, and (y) lead magnesium tungstate, where 0.11.ltoreq.x.ltoreq.0.13 and 0.01.ltoreq.y.ltoreq.0.03. Also disclosed is a tunable ultrasonic transducer made of a relaxor ferroelectric composition that has the components lead magnesium niobate, lead titanate, and lead magnesium tunstate. A method of making a relaxor ferroelectric material comprising the step of adding an effective amount of lead magnesium tungstate to a lead magnesium niobate-lead titanate composition is also disclosed.

Abstract: A gallium arsenide-based field effect transistor has a passivation layer of aluminum oxide below a gallium arsenide channel and aluminum oxide gate oxide layer formed over the channel. The aluminum oxide layers are treated to reduce the density of surface state impurities, particularly arsenic released in the oxide layer as a result of forming the oxide layer. The low surface state gallium arsenide channel has very low phase noise and is suitable for use as a local oscillator in a heterodyne receiver.