Abstract: Compressing data from a markup language document such as an XML document includes the steps of creating from the document a path based statistical tree built according to a given set of rules, and compressing the document by using the statistical tree. In an embodiment, the statistical tree includes a multitude of paths, and a single bit represents each of said paths. Also, the document may include both enumerated data and non-enumerated data, and the enumerated data is compressed by using the statistical tree. In an embodiment, the document includes a multitude of document nodes, and the step of creating the path based statistical tree includes the step of forming said tree with a multitude of tree nodes, each of the tree nodes representing one of the document nodes.

Abstract: A statistical tree representing an extensible Markup Language (XML) Schema document (XSD) is generated. The statistical tree captures information defined by the XSD by representing elements, attributes, and enumerations of the XSD as branches, nodes, and leaves of the statistical tree. The statistical tree has bits corresponding to nodes of the statistical tree. An XML document defined by the XSD is adaptively encoded, or compressed, as a number of bits based on the statistical tree that has been generated. The number of bits encoding the XML document are decoded, or decompressed, to yield the XML document also based on the statistical tree that has been generated.

Abstract: A dictionary for compressing and decompressing textual data has a number of keys. Each key is associated with an identifier. The keys include static word or phrase keys, where each static word or phrase key lists one or more unchanging words in a particular order. The keys further include dynamic phrase keys, where each dynamic phrase key lists a number of words and one or more placeholders in a particular order, and each placeholder denotes a place where a word or phrase other than the words of the dynamic phrase key is to be inserted. At least one of the dynamic phrase keys may identify one or more of the words by identifiers for corresponding static words or phrase keys. At least one of the static word or phrase keys may identify one or more of the words by identifiers for corresponding other static words or phrase keys.

Abstract: A dictionary for compressing and decompressing textual data has a number of keys. Each key is associated with an identifier. The keys include static word or phrase keys, where each static word or phrase key lists one or more unchanging words in a particular order. The keys further include dynamic phrase keys, where each dynamic phrase key lists a number of words and one or more placeholders in a particular order, and each placeholder denotes a place where a word or phrase other than the words of the dynamic phrase key is to be inserted. At least one of the dynamic phrase keys may identify one or more of the words by identifiers for corresponding static words or phrase keys. At least one of the static word or phrase keys may identify one or more of the words by identifiers for corresponding other static words or phrase keys.

Abstract: Methods for the heteroepitaxial growth of smooth, high quality films of N-face GaN film grown by MOCVD are disclosed. Use of a misoriented substrate and possibly nitridizing the substrate allow for the growth of smooth N-face GaN and other Group III nitride films as disclosed herein. The present invention also avoids the typical large (?m sized) hexagonal features which make N-face GaN material unacceptable for device applications. The present invention allows for the growth of smooth, high quality films which makes the development of N-face devices possible.

Abstract: A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.

Abstract: A method and apparatus for generating a statistical tree representing an extensible markup language Schema (XSD) is disclosed. Components of the XSD are prioritized according to predefined rules. A root node representing the XSD is created. Pairs of child nodes are generated from the root node. Each pair comprises at least one genuine node, and each pair of generated child nodes is appended to a parent node which is a genuine node. The path to each of the child nodes from a respective parent genuine node is represented with a binary sequence. At least one genuine node is allocated to a corresponding component of the XSD, the allocation being based on the prioritization of the component. Methods, apparatus and computer program products for generating a statistical tree representing XSD, for encoding an extensible markup language (XML) document utilizing a statistical tree representing XSD, and for decoding an XML document represented by a binary encoded sequence also are disclosed.

Abstract: Methods for the heteroepitaxial growth of smooth, high quality films of N-face GaN film grown by MOCVD are disclosed. Use of a misoriented substrate and possibly nitridizing the substrate allow for the growth of smooth N-face GaN and other Group III nitride films as disclosed herein. The present invention also avoids the typical large (?m sized) hexagonal features which make N-face GaN material unacceptable for device applications. The present invention allows for the growth of smooth, high quality films which makes the development of N-face devices possible.

Abstract: A reduction resistant lead-free and cadmium-free glass composition that is particularly suitable for use in conductive ink applications is disclosed. The invention includes a capacitor, which includes a conductive copper termination. The copper termination is made by firing an ink including a glass component, which may include ZnO, provided the amount does not exceed about 65 mole %; B2O3, provided the amount does not exceed about 61 mole %; and, SiO2, provided the amount does not exceed about 63 mole %. The molar ratio of B2O3 to SiO2 is from about 0.05 to about 3.

Abstract: A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.

Abstract: A reduction resistant lead-free and cadmium-free glass composition that is particularly suitable for use in conductive ink applications. The invention includes a capacitor comprising a conductive copper termination, the copper termination is made by firing an ink including a glass component, the glass component may comprise ZnO, provided the amount does not exceed about 65 mole %; B2O3, provided the amount does not exceed about 61 mole %; and, SiO2, provided the amount does not exceed about 63 mole %. The molar ratio of B2O3 to SiO2 is from about 0.05 to about 3.

Abstract: Lead-free and cadmium-free glass composition that is particularly suitable for use in conductive ink applications. The invention includes a capacitor comprising a copper termination, the copper termination is made by firing an ink including a glass component, the glass component may comprise up to about 65 mole % ZnO, up to about 51 mole % SrO, about 0.1 to about 61 mole % B2O3, up to about 17 mole % Al2O3, about 0.1 to about 63 mole % Sio2, up to about 40 mole % BaO+CaO, and up to about 20 mole % MgO.

Abstract: Lead-free and cadmium-free glass composition that is particularly suitable for use in conductive ink applications. The invention includes a capacitor comprising a copper termination, the copper termination is made by firing an ink including a glass component, the glass component may comprise up to about 65 mole % ZnO, up to about 51 mole % SrO, about 0.1 to about 61 mole % B2O3, up to about 17 mole % Al2O3, about 0.1 to about 63 mole % SiO2, up to about 40 mole % BaO+CaO, and up to about 20 mole % MgO.

Abstract: The present invention discloses a semiconductor film having a reduced dislocation density. The film comprises at least one interlayer structure, including a group III-nitride layer, a passivation interlayer disposed on the group III-nitride layer, interrupting the group III-nitride layer, and an island growth interlayer disposed on the passivation interlayer, and interrupting the group III-nitride layer. A method of making a semiconductor film of the present invention comprises producing a semiconductor film including at least one interlayer structure, each interlayer structure produced by the substeps of growing a group III-nitride layer, depositing a passivation interlayer on the group III-nitride layer, depositing an island growth interlayer on the passivation interlayer and continuing growing the group III-nitride layer.

Abstract: The present invention discloses a semiconductor film having a reduced dislocation density. The film comprises at least one interlayer structure, including a group III-nitride layer, a passivation interlayer disposed on the group III-nitride layer, interrupting the group III-nitride layer, and an island growth interlayer disposed on the passivation interlayer, and interrupting the group III-nitride layer. A method of making a semiconductor film of the present invention comprises producing a semiconductor film including at least one interlayer structure, each interlayer structure produced by the substeps of growing a group III-nitride layer, depositing a passivation interlayer on the group III-nitride layer, depositing an island growth interlayer on the passivation interlayer and continuing growing the group III-nitride layer.

Abstract: A method for growing high-quality gallium nitride over a substrate is disclosed. The method comprises growing first layer with a high dislocation density over the substrate, a second layer having a high number of point defects and a reduced dislocation density as compared to the dislocation density of the first layer over the first layer, and a third layer having a reduced number of point defects as compared to the second layer over the second layer. The resulting gallium nitride is semi-insulating, which inhibits parasitic current flow and parasitic capacitive effects, yet it not so insulating that electron flow in adjacent transistor channels is inhibited.

Abstract: Hydrothermal BaTiO3 crystallites were coated with Bismuth solutions prepared from Bismuth metal-organics and anhydrous solvents. The Bismuth metal-organics were Bi 2-ethylhexanoate and Bi-neodecanoate. Bismuth oxide was also used as a comparison to the Bismuth solutions. BaTiO3 ceramics with either 3.0 wt % equivalent Bismuth oxide or 5.0 wt % equivalent Bismuth oxide were made by sintering the compacts between 700° C. and 1000° C. BaTiO3 ceramics that were coated by Bi-neodecanoate densified >90% theoretical as low as 800° C. for 3.0 wt % equivalent Bi2O3. Average grain sizes of 0.2-0.4 &mgr;m were observed for Bi-coated BaTiO3 ceramics, for sintering temperatures below 950° C. Dielectric K versus temperature measurements of Bismuth-coated BaTiO3 ceramics, sintered in the lower temperature ranges, showed consistently superior dielectric characteristics.

Abstract: The present invention discloses a method of forming an oxide layer on a layer of gallium arsenide, including the steps of depositing a layer of aluminum arsenide on the layer of gallium arsenide, of exposing the layer of aluminum arsenide to an oxidizing gas mixture so that the aluminum arsenide is oxidized to aluminum oxide, and of controlling excess arsenic released in the aluminum oxide during the exposing step, so as to ensure enhanced electrical properties in the aluminum oxide. The method is used to provide an insulating gate layer for a GaAs field effect transistor by forming an oxide layer on GaAs and controlling excess arsenic so as to maintain high resistivity in the oxide layer and to avoid the formation of interface surface states which degrade transistor performance. The method is also used to provide complementary metal-insulator-semiconductor logic devices based on the gallium arsenide field effect transistor.

Abstract: The present invention discloses a method of forming an oxide layer on a layer of germanium including the steps of depositing a layer of aluminum arsenide on the layer of germanium, of exposing the layer of aluminum arsenide to an oxidizing gas mixture so that the aluminum arsenide is oxidized to aluminum oxide, and of controlling excess arsenic released in the aluminum oxide by the exposing step, so as to ensure enhanced electrical properties in the aluminum oxide. The method is used to provide an insulating gate layer for a Ge field effect transistor by forming an oxide layer on Ge and controlling excess arsenic so as to maintain high resistivity in the oxide layer and to avoid the formation of interface surface states which degrade transistor performance. The method is also used to provide complementary metal-insulator-semiconductor logic devices based on the germanium field effect transistor.

Abstract: A method and apparatus for producing full-color luminescent monolithic semiconductor devices. Each portion of the device is bandgap engineered by using different dopants to change the direct bandgap of selected areas of each region, thereby allowing that region to produce different wavelengths of emitted light at high efficiencies.