Patents by Inventor Umesh Kumar

Umesh Kumar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ultra-low phase noise GaAs MOSFETs
    Patent number: 5747838
    Abstract: A gallium arsenide-based field effect transistor has a passivation layer of aluminum oxide below a gallium arsenide channel and aluminum oxide gate oxide layer formed over the channel. The aluminum oxide layers are treated to reduce the density of surface state impurities, particularly arsenic released in the oxide layer as a result of forming the oxide layer. The low surface state gallium arsenide channel has very low phase noise and is suitable for use as a local oscillator in a heterodyne receiver.
    Type: Grant
    Filed: November 27, 1996
    Date of Patent: May 5, 1998
    Assignee: The Regents of the University of California
    Inventors: Umesh Kumar Mishra, Steven P. DenBaars