Abstract: A method for making a semiconductor device includes forming a patterned dielectric overlying active circuitry, the patterned dielectric having a plurality of cavities. A diffusion barrier is formed over the patterned dielectric. A conductive layer is formed over the diffusion barrier in the plurality of cavities. The conductive layer is etched back to be below a top surface of the dielectric, forming recessed areas over the conductive layers in the plurality of cavities. The recessed areas are then filled with a capping film. The capping film and the diffusion barrier are removed to provide a relatively smooth planarized surface. Providing a relatively smooth planarized surface reduces leakage currents between conductors.

Abstract: An electroless metal deposition process to make a semiconductor device uses a plating bath solution having a reducing agent. A sample of the bath solution is taken and the pH of the sample is increased. The hydrogen evolved from the sample is measured. The hydrogen evolved is used to determine the concentration of the reducing agent present in the sample. Based on the determined reducing agent concentration, the plating bath solution is modified.

Abstract: A method for making a semiconductor device includes cleaning a semiconductor wafer after a chemical mechanical polishing (CMP) process to remove or reduce particles of copper, a corrosion inhibitor such as triazole, and a copper oxide layer on the copper layer. In order to prepare for plating the copper layer with a layer that functions as a barrier to copper migration or diffusion, the surface of the copper layer and the dielectric layer are treated with an oxidant, a surfactant, and copper-chelating agent. The copper-chelating is preferably a mild acid such as an organic acid. The oxidant is particularly useful in removing the corrosion inhibitor. The barrier layer, preferably conductive, is then plated on the surface of the copper layer. Subsequent interlayer dielectric layers and copper layers follow that can use the same process.

Abstract: A diffusion barrier stack is formed by forming a layer comprising a metal over a conductor that includes copper; and forming a first dielectric layer over the layer, wherein the dielectric layer is of a thickness that alone it can not serve as a diffusion barrier layer to the conductor and the first dielectric layer prevents oxidation of the layer. In one embodiment, the diffusion barrier stack includes two layers; the first layer is a conductive layer and the second layer is a dielectric layer. The diffusion barrier stack minimizes electromigration and copper diffusion from the conductor.

Abstract: An electroless metal deposition process to make a semiconductor device uses a plating bath solution having a reducing agent. A sample of the bath solution is taken and the pH of the sample is increased. The hydrogen evolved from the sample is measured. The hydrogen evolved is used to determine the concentration of the reducing agent present in the sample. Based on the determined reducing agent concentration, the plating bath solution is modified.

Abstract: A conductive spacer (36, 122) in a sidewall region (30, 16) of a device (10, 100) is formed. The conductive spacer is formed adjacent sidewalls of the current electrode regions (18, 12). In one embodiment, a thin silicide layer (34) is formed at a top surface and a sidewall of the current electrode regions followed by an anisotropic etch of the conductive layer (32) used to form the thin silicide layer. The anisotropic etch of the conductive layer results in conductive spacers (36) adjacent sidewalls of the current electrode regions where these conductive spacers may allow for reduced contact resistance thus improving device performance. The conductive spacers may be formed adjacent current electrode regions of a MOSFET device, FINFET device, bipolar device, or Shotky-Barrier device.

Abstract: An electroless plating process for forming a barrier film such as a cobalt tungsten boron film on copper interconnects lines of semiconductor wafers uses a plating bath of morpholine borane which provides higher thermal stability and range, allowing for greater compatibility with low k dielectric materials. Mixed chelating agents with different stability constants with a metal source are used to complex base metal such as copper which dissolves into solution, if any. A fluorosurfactant is used as a wetting agent and stabilizer.

Abstract: An electroless plating process for forming a barrier film such as a cobalt tungsten boron film on copper interconnects lines of semiconductor wafers uses a plating bath of morpholine borane which provides higher thermal stability and range, allowing for greater compatibility with low k dielectric materials. Mixed chelating agents with different stability constants with a metal source are used to complex base metal such as copper which dissolves into solution, if any. A fluorosurfactant is used as a wetting agent and stabilizer.

Abstract: A passive integrated component (10) is formed overlying a semiconductor substrate by etching a composite conductive layer using a solution of sodium persulfate or ceric ammonium nitrate to remove a lower portion of the composite copper layer (64) exposed by an upper portion of the composite copper layer (74, 76, 78) to expose an underlying surface (62).

Abstract: A passive integrated component (10) is formed overlying a semiconductor substrate by etching a composite conductive layer using a solution of sodium persulfate or ceric ammonium nitrate to remove a lower portion of the composite copper layer (64) exposed by an upper portion of the composite copper layer (74, 76, 78) to expose an underlying surface (62).