Abstract: In sophisticated semiconductor devices, an asymmetric transistor configuration may be obtained on the basis of an asymmetric well implantation while avoiding a tilted implantation process. For this purpose, a graded implantation mask may be formed, such as a graded resist mask, which may have a higher ion blocking capability at the drain side compared to the source side of the asymmetric transistor. For instance, the asymmetric configuration may be obtained on the basis of a non-tilted implantation process with a high degree of performance gain and may be accomplished irrespective of the technology standard under consideration.

Abstract: Different strain-inducing semiconductor alloys may be incorporated into the drain and source areas of different transistors in sophisticated semiconductor devices by at least patterning the corresponding cavities in a common manufacturing sequence. Thus, the etch process may be performed on the basis of a high degree of uniformity and the subsequent epitaxial growth processes may, in some illustrative embodiments, be accomplished on the basis of only one additional lithography step.

Abstract: In a sophisticated semiconductor device, FINFET elements may be provided with individually accessible semiconductor fins which may be connected to a controllable interconnect structure for appropriately adjusting the transistor configuration, for instance with respect to current drive capability, replacing defective semiconductor fins and the like. Consequently, different transistor configurations may be obtained on the basis of a standard transistor cell architecture, which may result in increased production yield of highly complex manufacturing strategies in forming non-planar transistor devices.

Abstract: A semiconductor device includes a gate electrode structure of a transistor, the gate electrode structure being positioned above a semiconductor region and having a gate insulation layer that includes a high-k dielectric material, a metal-containing cap material positioned above the gate insulation layer, and a gate electrode material positioned above the metal-containing cap material. A bottom portion of the gate electrode structure has a first length and an upper portion of the gate electrode structure has a second length that is different than the first length, wherein the first length is approximately 50 nm or less. A strain-inducing semiconductor alloy is embedded in the semiconductor region laterally adjacent to the bottom portion of the gate electrode structure, and drain and source regions are at least partially positioned in the strain-inducing semiconductor alloy.

Abstract: A semiconductor device includes a gate electrode structure of a transistor, the gate electrode structure being positioned above a semiconductor region and having a gate insulation layer that includes a high-k dielectric material, a metal-containing cap material positioned above the gate insulation layer, and a gate electrode material positioned above the metal-containing cap material. A bottom portion of the gate electrode structure has a first length and an upper portion of the gate electrode structure has a second length that is different than the first length, wherein the first length is approximately 50 nm or less. A strain-inducing semiconductor alloy is embedded in the semiconductor region laterally adjacent to the bottom portion of the gate electrode structure, and drain and source regions are at least partially positioned in the strain-inducing semiconductor alloy.

Abstract: A semiconductor device includes a first transistor having first drain and source regions and a first channel region and a second transistor having second drain and source regions and a second channel region. A first silicon/carbon alloy material is embedded in the first drain and source regions, the first silicon/carbon alloy material inducing a first strain component along a first channel length direction of the first channel region. A second silicon/carbon alloy material is embedded in the second drain and source regions, the second silicon/carbon alloy material inducing a second strain component along a second channel length direction of the second channel region, wherein the second strain component is of an opposite type of the first strain component.

Abstract: Performance of P-channel transistors may be enhanced on the basis of an embedded strain-inducing semiconductor alloy by forming a gate electrode structure on the basis of a high-k dielectric material in combination with a metal-containing cap layer in order to obtain an undercut configuration of the gate electrode structure. Consequently, the strain-inducing semiconductor alloy may be formed on the basis of a sidewall spacer of minimum thickness in order to position the strain-inducing semiconductor material closer to a central area of the channel region.

Abstract: A silicon/germanium material and a silicon/carbon material may be provided in transistors of different conductivity type on the basis of an appropriate manufacturing regime without unduly contributing to overall process complexity. Furthermore, appropriate implantation species may be provided through exposed surface areas of the cavities prior to forming the corresponding strained semiconductor alloy, thereby additionally contributing to enhanced overall transistor performance. In other embodiments a silicon/carbon material may be formed in a P-channel transistor and an N-channel transistor, while the corresponding tensile strain component may be overcompensated for by means of a stress memorization technique in the P-channel transistor. Thus, the advantageous effects of the carbon species, such as enhancing overall dopant profile of P-channel transistors, may be combined with an efficient strain component while enhanced overall process uniformity may also be accomplished.

Abstract: The concentration of a non-silicon species in a semiconductor alloy, such as a silicon/germanium alloy, may be increased after a selective epitaxial growth process by oxidizing a portion of the semiconductor alloy and removing the oxidized portion. During the oxidation, preferably the silicon species may react to form a silicon dioxide material while the germanium species may be driven into the remaining semiconductor alloy, thereby increasing the concentration thereof. Consequently, the threshold adjustment of sophisticated transistors may be accomplished with enhanced process uniformity on the basis of a given parameter setting for the epitaxial growth process while nevertheless providing a high degree of flexibility in adjusting the composition of the threshold adjusting material.

Abstract: The PN junction of a substrate diode in a sophisticated SOI device may be formed on the basis of an embedded in situ doped semiconductor material, thereby providing superior diode characteristics. For example, a silicon/germanium semiconductor material may be formed in a cavity in the substrate material, wherein the size and shape of the cavity may be selected so as to avoid undue interaction with metal silicide material.

Abstract: By providing a test structure for evaluating the patterning process and/or the epitaxial growth process for forming embedded semiconductor alloys in sophisticated semiconductor devices, enhanced statistical relevance in combination with reduced test time may be accomplished.

Abstract: In a transistor, a strain-inducing semiconductor alloy, such as silicon/germanium, silicon/carbon and the like, may be positioned very close to the channel region by providing gradually shaped cavities which may then be filled with the strain-inducing semiconductor alloy. For this purpose, two or more “disposable” spacer elements of different etch behavior may be used in order to define different lateral offsets at different depths of the corresponding cavities. Consequently, enhanced uniformity and, thus, reduced transistor variability may be accomplished, even for sophisticated semiconductor devices.

Abstract: In a sophisticated semiconductor device, FINFET elements may be provided with individually accessible semiconductor fins which may be connected to a controllable inter-connect structure for appropriately adjusting the transistor configuration, for instance with respect to current drive capability, replacing defective semiconductor fins and the like. Consequently, different transistor configurations may be obtained on the basis of a standard transistor cell architecture, which may result in increased production yield of highly complex manufacturing strategies in forming non-planar transistor devices.

Abstract: Performance of P-channel transistors may be enhanced on the basis of an embedded strain-inducing semiconductor alloy by forming a gate electrode structure on the basis of a high-k dielectric material in combination with a metal-containing cap layer in order to obtain an undercut configuration of the gate electrode structure. Consequently, the strain-inducing semiconductor alloy may be formed on the basis of a sidewall spacer of minimum thickness in order to position the strain-inducing semiconductor material closer to a central area of the channel region.

Abstract: In sophisticated semiconductor devices, an asymmetric transistor configuration may be obtained on the basis of a strain-inducing semiconductor alloy. To this end, strain relaxation implantation processes may be performed at the drain side according to some illustrative embodiments, while, in other cases, the deposition of the strain-inducing alloy may be performed in an asymmetric manner with respect to the drain side and the source side of the transistor.

Abstract: The dopant profile of a transistor may be obtained on the basis of an in situ doped strain-inducing semiconductor alloy wherein a graded dopant concentration may be established along the height direction. Consequently, the semiconductor alloy may be positioned in close proximity to the channel region, thereby enhancing the overall strain-inducing efficiency, while not unduly compromising the finally obtained dopant profile. Furthermore, additional implant species may be incorporated prior to selectively growing the semiconductor alloy, thereby avoiding implantation-induced relaxation of the internal strain.

Abstract: By providing a test structure for evaluating the patterning process and/or the epitaxial growth process for forming embedded semiconductor alloys in sophisticated semiconductor devices, enhanced statistical relevance in combination with reduced test time may be accomplished.

Abstract: In a transistor, a strain-inducing semiconductor alloy, such as silicon/germanium, silicon/carbon and the like, may be positioned very close to the channel region by providing gradually shaped cavities which may then be filled with the strain-inducing semiconductor alloy. For this purpose, two or more “disposable” spacer elements of different etch behavior may be used in order to define different lateral offsets at different depths of the corresponding cavities. Consequently, enhanced uniformity and, thus, reduced transistor variability may be accomplished, even for sophisticated semiconductor devices.

Abstract: By providing a test structure for evaluating the patterning process and/or the epitaxial growth process for forming embedded semiconductor alloys in sophisticated semiconductor devices, enhanced statistical relevance in combination with reduced test time may be accomplished.

Abstract: In a transistor, a strain-inducing semiconductor alloy, such as silicon/germanium, silicon/carbon and the like, may be positioned very close to the channel region by providing gradually shaped cavities which may then be filled with the strain-inducing semiconductor alloy. For this purpose, two or more “disposable” spacer elements of different etch behavior may be used in order to define different lateral offsets at different depths of the corresponding cavities. Consequently, enhanced uniformity and, thus, reduced transistor variability may be accomplished, even for sophisticated semiconductor devices.