Patents by Inventor Vibhu Jindal

Vibhu Jindal has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220011663
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; and an absorber layer comprising tantalum and iridium or ruthenium and antimony.
    Type: Application
    Filed: July 8, 2021
    Publication date: January 13, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Shuwei Liu, Shiyu Liu, Vibhu Jindal
  • Patent number: 11209727
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer including an alloy of tantalum and copper on the capping layer.
    Type: Grant
    Filed: October 24, 2019
    Date of Patent: December 28, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Shuwei Liu, Vibhu Jindal, Abbas Rastegar
  • Publication number: 20210381967
    Abstract: Apparatus, methods and are disclosed for measuring refractive index of a material film. The method and apparatus utilize a reference measurement and as series of reflectance measurements at a range of wavelengths and thickness values for the material film to determine the refractive index of the material film.
    Type: Application
    Filed: June 5, 2020
    Publication date: December 9, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Wen Xiao, Vibhu Jindal, Huajun Liu, Herng Yau Yoong
  • Publication number: 20210382398
    Abstract: Apparatus, methods and are disclosed for measuring refractive index of an absorber material used in EUV phase shift masks. The method and apparatus utilize a reference measurement and as series of reflectance measurements at a range of EUV wavelengths and thickness values for the absorber material to determine the refractive index of the absorber material.
    Type: Application
    Filed: June 5, 2020
    Publication date: December 9, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Wen Xiao, Vibhu Jindal, Huajun Liu, Herng Yau Yoong
  • Patent number: 11194244
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from amorphous tantalum nitride formed by non-reactive sputtering.
    Type: Grant
    Filed: December 19, 2019
    Date of Patent: December 7, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Shuwei Liu, Chang Ke, Wen Xiao, Vibhu Jindal
  • Publication number: 20210341828
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate, a multilayer stack of reflective layers on the substrate, a capping layer on the multilayer stack of reflecting layers, and an absorber on the capping layer. The absorber comprising a plurality of bilayers comprising a first layer of silicon and a second layer selected from the group consisting of TaSb, CSb, TaNi, TaCu, SbN, CrN, Cr, Ir, Pd, Re, Os, Cd, Co, Ag, Pt, oxides of TaSb, CSb, TaNi, TaCu, SbN, CrN, Cr, Ir, Pd, Re, Os, Cd, Co, Ag, Pt, and nitrides of TaSb, CSb, TaNi, TaCu, Cr, Ir, Pd, Re, Os, Cd, Co, Ag, and Pt.
    Type: Application
    Filed: April 29, 2020
    Publication date: November 4, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Shiyu Liu, Shuwei Liu, Vibhu Jindal, Azeddine Zerrade
  • Publication number: 20210333703
    Abstract: Extreme ultraviolet (EUV) mask blanks and methods for their manufacture, and production systems therefor are disclosed. The method for forming an EUV mask blank comprises smoothing out surface defects on a surface of a substrate.
    Type: Application
    Filed: April 20, 2021
    Publication date: October 28, 2021
    Applicant: Applied Materials, Inc
    Inventors: Wen Xiao, Vibhu Jindal, Weimin Li, Sanjay Bhat, Azeddine Zerrade
  • Publication number: 20210325771
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from carbon and antimony.
    Type: Application
    Filed: April 13, 2021
    Publication date: October 21, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Shuwei Liu, Vibhu Jindal
  • Publication number: 20210302826
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate,; a multilayer stack of reflective layers on the substrate, a capping layer on the multilayer stack of reflecting layers, and an absorber on the capping layer. The absorber comprises a first layer selected from the group consisting of Mo, Nb, V, alloys of Mo, Nb and V, oxides of Mo, oxides of Nb, oxides of V, nitrides of Mo, nitrides of Nb and nitrides of V and a second layer selected from the group consisting of TaSb, CSb, SbN, TaNi, TaCu and TaRu.
    Type: Application
    Filed: March 23, 2021
    Publication date: September 30, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Shuwei Liu, Shiyu Liu, Azeddine Zerrade, Vibhu Jindal
  • Publication number: 20210272785
    Abstract: Physical vapor deposition target assemblies and methods of manufacturing such target assemblies are disclosed. An exemplary target assembly comprises a flow pattern including a plurality of arcs and bends fluidly connected to an inlet end and an outlet end.
    Type: Application
    Filed: May 11, 2021
    Publication date: September 2, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Sanjay Bhat, Vibhu Jindal, Vishwas Kumar Pandey
  • Publication number: 20210232042
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from antimony and nitrogen.
    Type: Application
    Filed: January 25, 2021
    Publication date: July 29, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Shuwei Liu, Shiyu Liu, Vibhu Jindal, Azeddine Zerrade, Ramya Ramalingam
  • Publication number: 20210232041
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; an absorber layer on the capping layer, the absorber layer comprising a tantalum-containing material; and a hard mask layer on the absorber layer, the hard mask layer comprising a hard mask material selected from the group consisting of CrO, CrON, TaNi, TaRu and TaCu.
    Type: Application
    Filed: January 25, 2021
    Publication date: July 29, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Shuwei Liu, Wen Xiao, Vibhu Jindal, Azeddine Zerrade
  • Publication number: 20210232040
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; an absorber layer on the capping layer, the absorber layer comprising an antimony-containing material; and a hard mask layer on the absorber layer, the hard mask layer comprising a hard mask material selected from the group consisting of CrO, CrON, TaNi, TaRu and TaCu.
    Type: Application
    Filed: January 25, 2021
    Publication date: July 29, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Shuwei Liu, Wen Xiao, Vibhu Jindal, Azeddine Zerrade
  • Publication number: 20210232039
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from tantalum and ruthenium.
    Type: Application
    Filed: January 19, 2021
    Publication date: July 29, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Shuwei Liu, Wen Xiao, Vibhu Jindal, Azeddine Zerrade
  • Patent number: 11037769
    Abstract: Physical vapor deposition target assemblies and methods of manufacturing such target assemblies are disclosed. An exemplary target assembly comprises a flow pattern including a plurality of arcs and bends fluidly connected to an inlet end and an outlet end.
    Type: Grant
    Filed: May 6, 2020
    Date of Patent: June 15, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Sanjay Bhat, Vibhu Jindal, Vishwas Kumar Pandey
  • Publication number: 20210173295
    Abstract: Provided herein are apparatus, systems and methods for processing reticle blanks. A reticle processing system includes a support assembly having a plate coupled to a frame, and a carrier base assembly supported on the support assembly. The carrier base assembly comprises a wall extending from a top surface of the carrier base and defining a containment region for a reticle.
    Type: Application
    Filed: December 3, 2020
    Publication date: June 10, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Sanjay Bhat, Vibhu Jindal
  • Publication number: 20210172054
    Abstract: A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising a deposition ring assembly comprising an inner and outer deposition ring which reduces particle defects.
    Type: Application
    Filed: December 3, 2020
    Publication date: June 10, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Sanjay Bhat, Vibhu Jindal
  • Patent number: 11022876
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a multilayer stack of absorber layers on the capping layer, the multilayer stack of absorber layers including a plurality of absorber layer pairs.
    Type: Grant
    Filed: March 17, 2020
    Date of Patent: June 1, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventor: Vibhu Jindal
  • Publication number: 20210124253
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture, and production systems therefor are disclosed. A method for forming an EUV mask blank comprises placing a substrate in a multi-cathode physical vapor deposition chamber, depositing a multilayer stack, removing the substrate from the chamber and passivating the PVD chamber.
    Type: Application
    Filed: October 22, 2020
    Publication date: April 29, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Herng Yau Yoong, Wen Xiao, Vibhu Jindal, Shuwei Liu, Sanjay Bhat, Azeddine Zerrade
  • Publication number: 20210124252
    Abstract: Methods for the manufacture of extreme ultraviolet (EUV) mask blanks and production systems therefor are disclosed. A method for forming an EUV mask blank comprises forming a bilayer on a portion of a multi-cathode PVD chamber interior and then forming a multilayer stack of Si/Mo on a substrate in the multi-cathode PVD chamber.
    Type: Application
    Filed: October 22, 2020
    Publication date: April 29, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Wen Xiao, Sanjay Bhat, Shiyu Liu, Binni Varghese, Vibhu Jindal, Azeddine Zerrade