Abstract: A semiconductor device used for high voltage applications is disclosed. The disclosed semiconductor device is an amplifying gate thyristor having a gate region, a pilot thyristor, a main thyristor and a compensation region. The compensation region in conjunction with a circuit arrangement and contact regions disposed on the amplifying gate thyristor, supplies a bias voltage developed by dv/dt currents flowing within the compensation region that is of equal potential to a voltage developed within the gate region by the dv/dt currents flowing within the gate region. The circuit arrangement, in conjunction with the contact regions, improves the dv/dt capability of the pilot thyristor without causing subsequent degradation of the dv/dt capability of the main thyristor. The circuit may be further arranged to provide an improvement to the dv/dt capability of the main thyristor.

Abstract: A semiconductor device for operation at high switching speeds includes a region of reduced carrier lifetime situated in the portion of the device in which the peak amount of carrier recombination occurs during device turn-off. This region of reduced carrier lifetime causes fast carrier recombination during device turn-off such that device switching speed is correspondingly increased over that of comparable conventional devices.

Abstract: The invention is a package for radiation triggered semiconductor devices and a method for directing radiation to the radiation receiving region of a semiconductor device mounted in such a package. The package is of the type which has a side wall formed of an electrically insulating material surrounding a central cavity, and top and bottom walls formed of conductive material. The package is hermetically sealable and constructed to withstand externally applied compression. The means and method for radiation triggering of a semiconductor device in the package include optical conduit means extending through and hermetically sealed to the insulating side wall of the enclosure. Radiation is caused to enter the package along a first optical path in said optical conduit means. A prism or other similar means in the cavity redirects the radiation from the first optical path toward a predetermined region in the cavity to trigger a radiation triggered semiconductor device mounted in the package.

Abstract: A precisely formed region of semiconductor material which correspondingly contains a precisely controlled amount of charge when depleted is provided in the proximity of a p-n junction in several kinds of semiconductor devices. This region is located within the selected semiconductor device in such a manner as to increase avalanche breakdown voltage of a p-n junction to near its ideal value and to reduce both peak bulk and peak surface electric fields.

Abstract: A light-fired thyristor is provided with a plurality of discrete light-receiving regions widely separated over the top surface of a semiconductor body. Each light-receiving region serves as a separate source of gate current for turning on the thyristor. The method of firing includes simultaneously illuminating the light-receiving regions preferably by means of multiple light fibers.

Abstract: A radiation responsive thyristor device is provided with a relatively large radiation receiving region in which numerous interconnected emitter shorts are provided. A metalization pattern overlies the radiation receiving region. Openings in the metalization pattern admit incident radiation to the underlying semiconductor surface. The metalization pattern connects with an adjacent contact which may be either a main emitter electrode or an amplifying stage gate electrode. Light fibers carrying radiation of sufficient intensity to fire the thyristor are coupled at non-specific locations adjacent the radiation receiving region. At least some of the light fibers will supply incident radiation to the thyristor through the openings in the metalization pattern, producing substantially simultaneous thyristor turn-on at a plurality of separate locations.

Abstract: A thyristor is protected against voltage breakover turn-on failure by selective control of the minority charge carrier lifetime in the base region and in the gate region to establish a predictable location of the voltage breakover turn-on in the gate region. Carrier lifetime modification in the selected gate region is achieved by shielding the gate region during electron irradiation of the high-lifetime silicon substrate to protect against lifetime-killing radiation defect centers, by annealling the gate region after electron irradiation to a temperature threshold known to eliminate the radiation-induced defects, or by introducing lifetime killing defects, such as gold or platinum, external to the gate region, typically by selective diffusion or localized ion implantation.

Abstract: Optoelectronic devices perform functions under control of light energy striking a light-sensitive area of the device. A flexible light pipe with a connector matching a counterpart at the optoelectronic device guides light energy from a light source to the optoelectronic device, avoiding the requirement for a fixed arrangement of light source and optoelectronic device.

Abstract: A self-protecting semiconductor device is provided wherein a region of localized increased avalanche multiplication factor is provided to insure that the maximum current density at the onset of avalanche voltage breakdown will occur in a known region. This current is utilized to turn-on the device in a controlled manner. In accordance with a presently preferred embodiment of this invention, the avalanche multiplication factor is increased by providing an etched down region in the gate region of the device, the etch extending at least into the depleted region proximate to the forward blocking semiconductor junction underlying the gate region of the device.

Abstract: Self-protection against breakover turn-on failure is achieved for a thyristor by providing for adjustment of the curvature of the planar junction termination in the gate region. In addition, breakdown of the outer edge of the device at the junctions is maintained at a relatively higher breakdown voltage by the techniques of beveling, floating field rings or by etching around the cathode emitter region.

Abstract: A radiation sensitive semiconductor device includes a light sensitive region and an independently selectable gate region isolated therefrom. High sensitivity in combination with large permissible light gathering areas are features.

Abstract: A self-protected thyristor structure is provided having an auxiliary gate region peripherally located with respect to the semiconductor device so as to provide for the controlled turn-on of the device at the edge thereof in response to increasing edge current densities at the onset of avalanche breakdown. An auxiliary pilot thyristor is provided substantially surrounding the main thyristor structure and including an annular gate electrode surrounding the auxiliary pilot thyristor structure to insure that turn-on occurs substantially simultaneously throughout the extent of the pilot thyristor region.