Patents by Inventor Vijay Parihar

Vijay Parihar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200040349
    Abstract: Methods and materials for increasing abiotic stress tolerance in plants are disclosed. For example, nucleic acids encoding abiotic stress tolerance-increasing polypeptides are disclosed as well as methods for using such nucleic acids to transform plant cells. Also disclosed are plants having increased tolerance to abiotic stress and methods of increasing plant yield under abiotic stress conditions.
    Type: Application
    Filed: September 19, 2019
    Publication date: February 6, 2020
    Inventors: ROGER I. PENNELL, WUYI WANG, CHUAN-YIN WU, DWARKESH PARIHAR, PARESH VERMA, VIJAY R. KUMAR, SHRIDHAR J. RAO
  • Patent number: 10480000
    Abstract: Methods and materials for increasing abiotic stress tolerance in plants are disclosed. For example, nucleic acids encoding abiotic stress tolerance-increasing polypeptides are disclosed as well as methods for using such nucleic acids to transform plant cells. Also disclosed are plants having increased tolerance to abiotic stress and methods of increasing plant yield under abiotic stress conditions.
    Type: Grant
    Filed: July 15, 2015
    Date of Patent: November 19, 2019
    Assignee: CERES, INC.
    Inventors: Roger I. Pennell, Wuyi Wang, Chuan-Yin Wu, Dwarkesh Parihar, Paresh Verma, Vijay R. Kumar, Shridhar J. Rao
  • Publication number: 20180099353
    Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.
    Type: Application
    Filed: December 11, 2017
    Publication date: April 12, 2018
    Inventors: Dean JENNINGS, Haifan LIANG, Mark YAM, Vijay PARIHAR, Abhilash J. MAYUR, Aaron Muir HUNTER, Bruce E. ADAMS, Joseph M. RANISH
  • Patent number: 9879341
    Abstract: Embodiments described herein provide a remote plasma system utilizing a microwave source. Additionally, generation and deposition techniques for 2D transition metal chalcogenides with large area uniformity utilizing microwave assisted generation of radicals is disclosed. Plasma may be generated remotely utilizing the microwave source. A processing platform configured to deposit 2D transition metal chalcogenides is also disclosed.
    Type: Grant
    Filed: June 21, 2016
    Date of Patent: January 30, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Kaushal K. Singh, Deepak Jadhav, Ashutosh Agarwal, Ashish Goel, Vijay Parihar, Er-Xuan Ping, Randhir P. S. Thakur
  • Patent number: 9839976
    Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.
    Type: Grant
    Filed: November 5, 2014
    Date of Patent: December 12, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Dean Jennings, Haifan Liang, Mark Yam, Vijay Parihar, Abhilash J. Mayur, Aaron Muir Hunter, Bruce E. Adams, Joseph Michael Ranish
  • Publication number: 20160372351
    Abstract: Embodiments described herein provide a remote plasma system utilizing a microwave source. Additionally, generation and deposition techniques for 2D transition metal chalcogenides with large area uniformity utilizing microwave assisted generation of radicals is disclosed. Plasma may be generated remotely utilizing the microwave source. A processing platform configured to deposit 2D transition metal chalcogenides is also disclosed.
    Type: Application
    Filed: June 21, 2016
    Publication date: December 22, 2016
    Inventors: Kaushal K. SINGH, Deepak JADHAV, Ashutosh AGARWAL, Ashish GOEL, Vijay PARIHAR, Er-Xuan PING, Randhir P.S. THAKUR
  • Publication number: 20150069028
    Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.
    Type: Application
    Filed: November 5, 2014
    Publication date: March 12, 2015
    Inventors: Dean JENNINGS, Haifan LIANG, Mark YAM, Vijay PARIHAR, Abhilash J. MAYUR, Aaron Muir HUNTER, Bruce E. ADAMS, Joseph Michael RANISH
  • Patent number: 8907247
    Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.
    Type: Grant
    Filed: May 31, 2012
    Date of Patent: December 9, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Dean Jennings, Haifan Liang, Mark Yam, Vijay Parihar, Abhilash J. Mayur, Aaron Hunter, Bruce Adams, Joseph Michael Ranish
  • Patent number: 8890024
    Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.
    Type: Grant
    Filed: May 31, 2012
    Date of Patent: November 18, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Dean Jennings, Haifan Liang, Mark Yam, Vijay Parihar, Abhilash J. Mayur, Aaron Hunter, Bruce Adams, Joseph Michael Ranish
  • Patent number: 8864915
    Abstract: A method of processing a substrate having a transparent conductive oxide disposed thereon, including: exposing the substrate to a first cleaning solution comprising hydrogen peroxide and ammonium citrate; exposing the substrate to a second cleaning solution having a pH within a range from about 6 to about 7, the second cleaning solution different than the first cleaning solution; agitating the second cleaning solution; and depositing a silicon-containing film on the transparent conductive oxide.
    Type: Grant
    Filed: August 3, 2011
    Date of Patent: October 21, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Renhe Jia, Adam Brand, Liming Zhang, Dapeng Wang, Tzay-Fa Su, Vijay Parihar
  • Patent number: 8822259
    Abstract: Embodiments of the invention generally relate to solar cell devices and methods for manufacturing such solar cell devices. In one embodiment, a method for forming a solar cell device includes depositing a conversion layer over a first surface of a substrate, depositing a first transparent conductive oxide layer over a second surface of the substrate that is opposite the first surface, depositing a first p-doped silicon layer over the first transparent conductive oxide layer, depositing a first intrinsic silicon layer over the first p-doped silicon layer, and depositing a first n-doped silicon layer over the first intrinsic silicon layer. The method further includes depositing a second transparent conductive oxide layer over the first n-doped silicon layer, and depositing an electrically conductive contact layer over the second transparent conductive oxide layer.
    Type: Grant
    Filed: April 15, 2011
    Date of Patent: September 2, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Kaushal K. Singh, Robert Visser, Vijay Parihar, Randhir P. S. Thakur
  • Patent number: 8765618
    Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.
    Type: Grant
    Filed: May 31, 2012
    Date of Patent: July 1, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Dean Jennings, Haifan Liang, Mark Yam, Vijay Parihar, Abhilash J. Mayur, Aaron Muir Hunter, Bruce E. Adams, Joseph M. Ranish
  • Patent number: 8653408
    Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.
    Type: Grant
    Filed: May 31, 2012
    Date of Patent: February 18, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Dean Jennings, Haifan Liang, Mark Yam, Vijay Parihar, Abhilash J. Mayur, Aaron Hunter, Bruce Adams, Joseph Michael Ranish
  • Patent number: 8586893
    Abstract: A system for thermal processing of a substrate includes a source of radiation, optics disposed between the source and the substrate to receive light from the source of radiation at the optics proximate end, and a housing holding the optics and having a void inside the housing isolated from light emitted from the source. A light detector is disposed within the void in the housing to detect light from the optics emitted into the housing and send a deterioration signal. The system further includes a power supply for the source of radiation, and a controller to control the power supply based on the deterioration signal from the light detector.
    Type: Grant
    Filed: March 12, 2008
    Date of Patent: November 19, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Bruce E. Adams, Dean Jennings, Aaron Muir Hunter, Abhilash J. Mayur, Vijay Parihar
  • Patent number: 8338316
    Abstract: A plasma enhanced physical vapor deposition process deposits an amorphous carbon layer on an ion-implanted wafer for use in dynamic surface annealing of the wafer with an intense line beam of a laser wavelength. The deposition process is carried out at a wafer temperature below the dopant clustering threshold temperature, and includes introducing the wafer into a chamber having a carbon-containing target overlying the wafer, and furnishing a carrier gas into the chamber. The process further includes generating a wafer bias voltage and applying target source power to the carbon-containing target sufficient to produce ion bombardment of the carbon-containing target. The wafer bias voltage is set to a level at which the amorphous carbon layer that is deposited has a desired extinction coefficient at the laser wavelength.
    Type: Grant
    Filed: May 19, 2011
    Date of Patent: December 25, 2012
    Assignee: Applied Materials, Inc.
    Inventors: Vijay Parihar, Christopher Dennis Bencher, Rajesh Kanuri, Marlon E. Menezes
  • Patent number: 8319149
    Abstract: The time between illumination of adjacent zones of a workpiece edge is extended by a long cool-down period or delay, by interlacing a radiation beam scanning pattern. During the cool-down period, the beam successively scans (along the fast axis) two rows separated by about half the wafer diameter, and travels back and then forth (along the slow axis) across the distance between the two rows, while the radiation beam source continuously generates the beam.
    Type: Grant
    Filed: September 29, 2008
    Date of Patent: November 27, 2012
    Assignee: Applied Materials, Inc.
    Inventors: Kai Ma, Abhilash J. Mayur, Vijay Parihar
  • Publication number: 20120261395
    Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.
    Type: Application
    Filed: May 31, 2012
    Publication date: October 18, 2012
    Inventors: Dean Jennings, Haifan Liang, Mark Yam, Vijay Parihar, Abhilash J. Mayur, Aaron Hunter, Bruce Adams, Joseph Michael Ranish
  • Patent number: 8288683
    Abstract: A dynamic surface anneal apparatus for annealing a semiconductor workpiece has a workpiece support for supporting a workpiece, an optical source and scanning apparatus for scanning the optical source and the workpiece support relative to one another along a fast axis. The optical source includes an array of laser emitters arranged generally in successive rows of the emitters, the rows being transverse to the fast axis. Plural collimating lenslets overlie respective ones of the rows of emitters and provide collimation along the fast axis. The selected lenslets have one or a succession of optical deflection angles corresponding to beam deflections along the fast axis for respective rows of emitters. Optics focus light from the array of laser emitters onto a surface of the workpiece to form a succession of line beams transverse to the fast axis spaced along the fast axis in accordance with the succession of deflection angles.
    Type: Grant
    Filed: November 4, 2008
    Date of Patent: October 16, 2012
    Assignee: Applied Materials, Inc.
    Inventors: Dean Jennings, Abhilash J. Mayur, Timothy N. Thomas, Vijay Parihar, Vedapuram S. Achutharaman, Randhir P. S. Thakur
  • Publication number: 20120234801
    Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.
    Type: Application
    Filed: May 31, 2012
    Publication date: September 20, 2012
    Inventors: Dean JENNINGS, Haifan LIANG, Mark YAM, Vijay PARIHAR, Abhilash J. MAYUR, Aaron HUNTER, Bruce ADAMS, Joseph Michael RANISH
  • Publication number: 20120238111
    Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.
    Type: Application
    Filed: May 31, 2012
    Publication date: September 20, 2012
    Inventors: Dean Jennings, Haifan Liang, Mark Yam, Vijay Parihar, Abhilash J. Mayur, Aaron Hunter, Bruce Adams, Joseph Michael Ranish