Patents by Inventor Vijay Parihar
Vijay Parihar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120238111Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.Type: ApplicationFiled: May 31, 2012Publication date: September 20, 2012Inventors: Dean Jennings, Haifan Liang, Mark Yam, Vijay Parihar, Abhilash J. Mayur, Aaron Hunter, Bruce Adams, Joseph Michael Ranish
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Publication number: 20120234801Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.Type: ApplicationFiled: May 31, 2012Publication date: September 20, 2012Inventors: Dean JENNINGS, Haifan LIANG, Mark YAM, Vijay PARIHAR, Abhilash J. MAYUR, Aaron HUNTER, Bruce ADAMS, Joseph Michael RANISH
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Patent number: 8242407Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.Type: GrantFiled: June 28, 2010Date of Patent: August 14, 2012Assignee: Applied Materials, Inc.Inventors: Dean Jennings, Haifan Liang, Mark Yam, Vijay Parihar, Abhilash Mayur, Aaron Hunter, Bruce Adams, Joseph Michael Ranish
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Publication number: 20120037181Abstract: Embodiments of the present invention generally relate to methods for cleaning a substrate prior to a deposition process. The methods generally include multiple cleaning solutions for removing contaminants from a surface of a substrate. The multiple solutions generally have different compositions, and each of the solutions contain one or more additives selected to remove a variety of contaminants. Mechanical agitation may also be utilized to remove contaminants from the surface of a substrate. After cleaning a substrate, a material may be deposited on the substrate surface.Type: ApplicationFiled: August 3, 2011Publication date: February 16, 2012Applicant: APPLIED MATERIALS, INC.Inventors: Renhe Jia, Adam Brand, Liming Zhang, Dapeng Wang, Tzay-Fa Su, Vijay Parihar
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Publication number: 20110263068Abstract: Embodiments of the invention generally relate to solar cell devices and methods for manufacturing such solar cell devices. In one embodiment, a method for forming a solar cell device includes depositing a conversion layer over a first surface of a substrate, depositing a first transparent conductive oxide layer over a second surface of the substrate that is opposite the first surface, depositing a first p-doped silicon layer over the first transparent conductive oxide layer, depositing a first intrinsic silicon layer over the first p-doped silicon layer, and depositing a first n-doped silicon layer over the first intrinsic silicon layer. The method further includes depositing a second transparent conductive oxide layer over the first n-doped silicon layer, and depositing an electrically conductive contact layer over the second transparent conductive oxide layer.Type: ApplicationFiled: April 15, 2011Publication date: October 27, 2011Applicant: APPLIED MATERIALS, INC.Inventors: KAUSHAL K. SINGH, Robert Visser, Vijay Parihar, Randhir P. S. Thakur
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Publication number: 20110223773Abstract: A plasma enhanced physical vapor deposition process deposits an amorphous carbon layer on an ion-implanted wafer for use in dynamic surface annealing of the wafer with an intense line beam of a laser wavelength. The deposition process is carried out at a wafer temperature below the dopant clustering threshold temperature, and includes introducing the wafer into a chamber having a carbon-containing target overlying the wafer, and furnishing a carrier gas into the chamber. The process further includes generating a wafer bias voltage and applying target source power to the carbon-containing target sufficient to produce ion bombardment of the carbon-containing target. The wafer bias voltage is set to a level at which the amorphous carbon layer that is deposited has a desired extinction coefficient at the laser wavelength.Type: ApplicationFiled: May 19, 2011Publication date: September 15, 2011Inventors: Vijay Parihar, Christopher Dennis Bencher, Rajesh Kanuri, Marlon E. Menezes
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Patent number: 7989366Abstract: Methods are disclosed for activating dopants in a doped semiconductor substrate. A carbon precursor is flowed into a substrate processing chamber within which the doped semiconductor substrate is disposed. A plasma is formed from the carbon precursor in the substrate processing chamber. A carbon film is deposited over the substrate with the plasma. A temperature of the substrate is maintained while depositing the carbon film less than 500° C. The deposited carbon film is exposed to electromagnetic radiation for a period less than 10 ms, and has an extinction coefficient greater than 0.3 at a wavelength comprised by the electromagnetic radiation.Type: GrantFiled: August 24, 2007Date of Patent: August 2, 2011Assignee: Applied Materials, Inc.Inventors: Jeffrey C. Munro, Srinivas D. Nemani, Young S. Lee, Marlon Menezes, Christopher Dennis Bencher, Vijay Parihar
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Patent number: 7968473Abstract: A plasma enhanced physical vapor deposition process deposits an amorphous carbon layer on an ion-implanted wafer for use in dynamic surface annealing of the wafer with an intense line beam of a laser wavelength. The deposition process is carried out at a wafer temperature below the dopant clustering threshold temperature, and includes introducing the wafer into a chamber having a carbon-containing target overlying the wafer, and furnishing a carrier gas into the chamber. The process further includes generating a wafer bias voltage and applying target source power to the carbon-containing target sufficient to produce ion bombardment of the carbon-containing target. The wafer bias voltage is set to a level at which the amorphous carbon layer that is deposited has a desired extinction coefficient at the laser wavelength.Type: GrantFiled: April 5, 2007Date of Patent: June 28, 2011Assignee: Applied Materials, Inc.Inventors: Vijay Parihar, Christopher Dennis Bencher, Rajesh Kanuri, Marlon E. Menezes
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Publication number: 20100264123Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.Type: ApplicationFiled: June 28, 2010Publication date: October 21, 2010Applicant: APPLIED MATERIALS, INC.Inventors: Dean Jennings, Haifan Liang, Mark Yam, Vijay Parihar, Abhilash J. Mayur, Aaron Hunter, Bruce Adams, Joseph Michael Ranish
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Patent number: 7795124Abstract: Methods for reducing contact resistance in semiconductor devices are provided in the present invention. In one embodiment, the method includes providing a substrate having semiconductor device formed thereon, wherein the device has source and drain regions and a gate structure formed therein, performing a silicidation process on the substrate by a thermal annealing process, and performing a laser anneal process on the substrate. In another embodiment, the method includes providing a substrate having implanted dopants, performing a silicidation process on the substrate by a thermal annealing process, and activating the dopants by a laser anneal process.Type: GrantFiled: June 23, 2006Date of Patent: September 14, 2010Assignee: Applied Materials, Inc.Inventors: Faran Nouri, Eun-Ha Kim, Sunderraj Thirupapuliyur, Vijay Parihar
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Patent number: 7772134Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.Type: GrantFiled: August 24, 2009Date of Patent: August 10, 2010Assignee: Applied Materials, Inc.Inventors: Dean Jennings, Haifan Liang, Mark Yam, Vijay Parihar, Abhilash Mayur, Aaron Hunter, Bruce Adams, Joseph Michael Ranish
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Patent number: 7717617Abstract: A thermal processing system includes a source of laser radiation emitting at a laser wavelength, beam projection optics disposed between the reflective surface and a substrate support capable of holding a substrate to be processed, a pyrometer responsive to a pyrometer wavelength, and a wavelength responsive optical element having a first optical path for light in a first wavelength range including the laser wavelength, the first optical path being between the source of laser radiation and the beam projection optics, and a second optical path for light in a second wavelength range including the pyrometer wavelength, the second optical path being between the beam projection optics and the pyrometer. The system can further include a pyrometer wavelength blocking filter between the source of laser radiation and the wavelength responsive optical element.Type: GrantFiled: September 12, 2008Date of Patent: May 18, 2010Assignee: Applied Materials, Inc.Inventors: Bruce E. Adams, Dean Jennings, Aaron M. Hunter, Abhilash J. Mayur, Vijay Parihar, Timothy N. Thomas
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Patent number: 7674999Abstract: A dynamic surface anneal apparatus for annealing a semiconductor workpiece has a workpiece support for supporting a workpiece, an optical source and scanning apparatus for scanning the optical source and the workpiece support relative to one another along a fast axis. The optical source includes an array of laser emitters arranged generally in successive rows of the emitters, the rows being transverse to the fast axis. Plural collimating lenslets overlie respective ones of the rows of emitters and provide collimation along the fast axis. The selected lenslets have one or a succession of optical deflection angles corresponding to beam deflections along the fast axis for respective rows of emitters. Optics focus light from the array of laser emitters onto a surface of the workpiece to form a succession of line beams transverse to the fast axis spaced along the fast axis in accordance with the succession of deflection angles.Type: GrantFiled: August 23, 2006Date of Patent: March 9, 2010Assignee: Applied Materials, Inc.Inventors: Dean Jennings, Abhilash J. Mayur, Timothy N. Thomas, Vijay Parihar, Vedapuram S. Achutharaman, Randhir P. S. Thakur
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Patent number: 7659187Abstract: A method of forming transistors on a wafer includes forming gates over gate insulators on a surface of the wafer and ion implanting dopant impurity atoms into the wafer to form source and drain regions aligned on opposite sides of each gate. The wafer is then annealed by pre-heating the bulk of the wafer to an elevated temperature over 350 degrees C. but below a temperature at which the dopant atoms tend to cluster. Meanwhile, an intense line beam is produced having a narrow dimension along a fast axis from an array of coherent CW lasers of a selected wavelength. This line beam is scanned across the surface of the heated wafer along the direction of the fast axis, so as to heat, up to a peak surface temperature near a melting temperature of the wafer, a moving localized region on the surface of the wafer having (a) a width corresponding to the narrow beam width and (b) an extremely shallow below-surface depth.Type: GrantFiled: April 16, 2007Date of Patent: February 9, 2010Assignee: Applied Materials, Inc.Inventors: Philip Allan Kraus, Vijay Parihar
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Publication number: 20090311880Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.Type: ApplicationFiled: August 24, 2009Publication date: December 17, 2009Applicant: Applied Materials, Inc.Inventors: Dean JENNINGS, Haifan LIANG, Mark YAM, Vijay PARIHAR, Abhilash J. MAYUR, Aaron HUNTER, Bruce ADAMS, Joseph Michael RANISH
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Publication number: 20090261078Abstract: The time between illumination of adjacent zones of a workpiece edge is extended by a long cool-down period or delay, by interlacing a radiation beam scanning pattern. During the cool-down period, the beam successively scans (along the fast axis) two rows separated by about half the wafer diameter, and travels back and then forth (along the slow axis) across the distance between the two rows, while the radiation beam source continuously generates the beam.Type: ApplicationFiled: September 29, 2008Publication date: October 22, 2009Applicant: Applied Materials, Inc.Inventors: KAI MA, Abhilash J. Mayur, Vijay Parihar
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Patent number: 7595208Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.Type: GrantFiled: August 10, 2007Date of Patent: September 29, 2009Assignee: Applied Materials, Inc.Inventors: Dean Jennings, Haifan Liang, Mark Yam, Vijay Parihar, Abhilash Mayur, Aaron Hunter, Bruce Adams, Joseph Michael Ranish
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Patent number: 7588990Abstract: A plasma enhanced physical vapor deposition process deposits an amorphous carbon layer on an ion-implanted wafer for use in dynamic surface annealing of the wafer with an intense line beam of a laser wavelength. The deposition process is carried out at a wafer temperature below the dopant clustering threshold temperature, and includes introducing the wafer into a chamber and furnishing a hydrocarbon process gas into the chamber, preferably propylene (C3H6) or toluene (C7H8) or acetylene (C2H2) or a mixture of acetylene and methane (C2H4). The process further includes inductively coupling RF plasma source power into the chamber while and applying RF plasma bias power to the wafer. The wafer bias voltage is set to a level at which the amorphous carbon layer that is deposited has a desired stress (compressive or tensile). We have discovered that at a wafer temperature less than or equal to 475 degrees C.Type: GrantFiled: March 28, 2007Date of Patent: September 15, 2009Assignee: Applied Materials, Inc.Inventors: Vijay Parihar, Christopher Dennis Bencher, Rajesh Kanuri, Marlon E. Menezes
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Publication number: 20090152247Abstract: A dynamic surface anneal apparatus for annealing a semiconductor workpiece has a workpiece support for supporting a workpiece, an optical source and scanning apparatus for scanning the optical source and the workpiece support relative to one another along a fast axis. The optical source includes an array of laser emitters arranged generally in successive rows of the emitters, the rows being transverse to the fast axis. Plural collimating lenslets overlie respective ones of the rows of emitters and provide collimation along the fast axis. The selected lenslets have one or a succession of optical deflection angles corresponding to beam deflections along the fast axis for respective rows of emitters. Optics focus light from the array of laser emitters onto a surface of the workpiece to form a succession of line beams transverse to the fast axis spaced along the fast axis in accordance with the succession of deflection angles.Type: ApplicationFiled: November 4, 2008Publication date: June 18, 2009Inventors: Dean Jennings, Abhilash J. Mayur, Timothy N. Thomas, Vijay Parihar, Vedapuram S. Achutharaman, Randhir P.S. Thakur
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Publication number: 20090084986Abstract: A thermal processing system includes a source of laser radiation emitting at a laser wavelength, beam projection optics disposed between the reflective surface and a substrate support capable of holding a substrate to be processed, a pyrometer responsive to a pyrometer wavelength, and a wavelength responsive optical element having a first optical path for light in a first wavelength range including the laser wavelength, the first optical path being between the source of laser radiation and the beam projection optics, and a second optical path for light in a second wavelength range including the pyrometer wavelength, the second optical path being between the beam projection optics and the pyrometer. The system can further include a pyrometer wavelength blocking filter between the source of laser radiation and the wavelength responsive optical element.Type: ApplicationFiled: September 12, 2008Publication date: April 2, 2009Inventors: Bruce E. Adams, Dean Jennings, Aaron M. Hunter, Abhilash J. Mayur, Vijay Parihar, Timothy N. Thomas