Abstract: A method for ion implantation of a substrate includes forming a plasma from at least one implant material comprising at least one implant species, implanting the at least one implant species into a surface of the substrate, and directing at least one surface-modifying species at the surface to reduce a surface damage associated with the plasma. An apparatus for ion implantation is configured to implement this method.

Abstract: A method for plasma ion implantation of a substrate includes providing a plasma ion implantation system including a process chamber, a source for producing a plasma in the process chamber, a platen for holding the substrate in the process chamber, and a voltage source for accelerating ions from the plasma into the substrate, depositing on interior surfaces of the process chamber a fresh coating that is similar in composition to a deposited film that results from plasma ion implantation of the substrate, before depositing the fresh coating, cleaning interior surfaces of the process chamber by removing an old film using one or more activated cleaning precursors, plasma ion implantation of the substrate according to a plasma ion implantation process, and repeating the steps of cleaning interior surfaces of the process chamber and depositing a fresh coating following plasma ion implantation of one or more substrates.

Abstract: A plasma source includes a chamber that contains a process gas. The chamber has a chamber top comprising a first section formed of a dielectric material that extends in a horizontal direction. A second section of the chamber top is formed of a dielectric material that extends a height from the first section in a vertical direction. A top section of the chamber top is formed of a conductive material that extends a length across the second section in the horizontal direction. A radio frequency antenna is positioned proximate to at least one of the first section and the second section. The radio frequency antenna induces radio frequency currents into the chamber that excite and ionize the process gas so as to generate a plasma in the chamber.

Abstract: A plasma immersion ion implant apparatus and method, and a plasma chamber, each configured to provide a uniform ion flux and to dissipate the effects of secondary electrons are disclosed. The invention includes a plasma chamber including a dielectric tophat configuration and a conductive top section that may be liquid cooled. In addition, the invention provides a radio frequency (RF) antenna configuration including an active antenna that is coupled to an RF source and a parasitic antenna that is not directly coupled to any RF source, but may be grounded. The RF antenna allows for tuning of the RF coupling.

Abstract: Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of both hydrogen and fluorine as process gases in the reactive mixture of a plasma-containing CVD reactor. The process gas also includes dielectric forming precursors such as silicon and oxygen-containing molecules.

Abstract: Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen as a process gas in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.

Abstract: A system, method and computer readable medium for sampling data from a relational database are disclosed, where an information processing system chooses rows from a table in a relational database for sampling, wherein data values are arranged into rows, rows are arranged into pages, and pages are arranged into tables. Pages are chosen for sampling according to a probability P and rows in a selected page are chosen for sampling according to a probability R, so that the overall probability of choosing a row for sampling is Q=PR. The probabilities P and R are based on the desired precision of estimates computed from a sample, as well as processing speed. The probabilities P and R are further based on either catalog statistics of the relational database or a pilot sample of rows from the relational database.

Abstract: Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen as a process gas in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.

Abstract: The present invention provides plasma processing systems and methods for providing a set-point temperature for substrates during plasma processing by controlling clamping force or RF power. The plasma processing system includes a plasma chamber, a controller, and an electrostatic power supply. The plasma chamber is arranged to receive an RF power and a source gas for producing plasma. The plasma chamber includes an electrostatic chuck for clamping a substrate in place during plasma processing. The electrostatic chuck includes an electrode and a sensor, which is arranged to monitor temperature of the substrate being processed. The controller is coupled to the sensor to receive the substrate temperature and is configured to generate a control signal for driving the substrate temperature to the set-point temperature. The electrostatic power supply is coupled between the controller and the electrode in the electrostatic chuck.

Abstract: A plasma processing system and method for processing substrates such as by chemical vapor deposition or etching. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a primary gas supply supplying a primary gas such as process gas into the chamber, a secondary gas supply supplying a secondary gas such as a substantially inert, a substrate passivating or a reactant scavenging gas into the chamber, and an RF energy source such as a planar coil which inductively couples RF energy through the dielectric member and into the chamber to energize the primary gas into a plasma state. The secondary gas is concentrated near the periphery of the substrate, improving etching/deposition uniformity across the substrate surface.

Abstract: An improved focus ring is configured for use in a plasma processing chamber. The focus ring is configured to overlap at least a portion of a substrate-holding chuck that is powered by radio frequency (RF) power during plasma operation to act as an electrode. The focus ring includes an upper surface that is exposed to a plasma region within the plasma processing chamber during the plasma operation. The focus ring further includes a chuck-overlapping portion that overlaps the portion of the substrate-holding chuck, at least a portion of the chuck-overlapping portion being formed of a first material having a lower dielectric constant than a remainder of the focus ring.

Abstract: A plasma processing system configured for use in processing a substrate after metal etching. The substrate includes a layer of photoresist disposed thereon. The plasma processing system includes a plasma generating region and a baffle plate disposed between the plasma generating region and the substrate. The baffle plate includes a central blocked portion disposed in a center region of the baffle plate. The baffle plate further includes an annular porous portion surrounding the central blocked portion. The annular porous portion includes a plurality of through holes configured for permitting a H.sub.2 O plasma generated in the plasma generating region to pass through the holes to reach a surface of the substrate. The plasma processing system also includes a chuck disposed below the baffle plate to support the substrate during the processing.

Abstract: A new and distinct mutant plant of Lippia alba called ‘Bhurakshak,’ characterized by novel aroma of the oil constituting 7.2% 1, 8 cineole, 42.3% linalool, 12.9% citral (b) and 14.2% citral (a) as a major terpenoids, and having a unique RAPD profile as shown in FIG. 1 of the drawings.

Abstract: A new and distinct hybrid plant named `Himalaya` (Mentha arvensis) characterized by its higher yield of oil which is rich in menthol, improved regeneration potential, vigorous growth, deep green broad thick leaves, pinkish white flowers and tolerance to rust such as alternaria leaf blight, corynespora leaf spot and powdery mildew.