Patents by Inventor Vikram Singh

Vikram Singh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090061605
    Abstract: A method to provide a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that surface peak dopant profiles and retrograde dopant profiles are realized. The method may include an amorphization step in one embodiment.
    Type: Application
    Filed: November 7, 2008
    Publication date: March 5, 2009
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Ludovic GODET, George D. Papasouliotis, Ziwei Fang, Richard Appel, Vincent Deno, Vikram Singh, Harold M. Persing
  • Publication number: 20090017229
    Abstract: A platen for a processing system includes a first and a second thermal region that are separated by at least one boundary. A first fluid conduit is positioned in the first thermal region. A second fluid conduit is positioned in the second thermal region. A fluid reservoir having a first output is coupled to the first fluid conduit and a second output that is coupled to the second fluid conduit. The fluid reservoir provides fluid to the first fluid conduit with first fluid conditions that provides a first thermal conductivity to the first thermal region and provides fluid to the second fluid conduit with second fluid conditions that provides a second thermal conductivity to the second thermal region so that a predetermined thermal conductivity profile is achieved in the platen.
    Type: Application
    Filed: June 20, 2008
    Publication date: January 15, 2009
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Vikram Singh, Richard S. Muka, Timothy J. Miller, Changhoon Choi
  • Patent number: 7476849
    Abstract: An in-situ ion sensor is disclosed for monitoring ion species in a plasma chamber. The ion sensor may comprise: a drift tube; an extractor electrode and a plurality of electrostatic lenses disposed at a first end of the drift tube, wherein the extractor electrode is biased to attract ions from a plasma in the plasma chamber, and wherein the plurality of electrostatic lenses cause at least one portion of the attracted ions to enter the drift tube and drift towards a second end of the drift tube within a limited divergence angle; an ion detector disposed at the second end of the drift tube, wherein the ion detector detects arrival times associated with the at least one portion of the attracted ions; and a housing for the extractor, the plurality of electrostatic lenses, the drift tube, and the ion detector, wherein the housing accommodates differential pumping between the ion sensor and the plasma chamber.
    Type: Grant
    Filed: March 10, 2006
    Date of Patent: January 13, 2009
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Bon-Woong Koo, Ludovic Godet, Vassilis Panayotis Vourloumis, Vikram Singh, Ziwei Fang
  • Publication number: 20090001890
    Abstract: An apparatus for processing a substrate includes a pulsed power supply that generates a waveform having a first period with a first power level and a second period with a second power level. A plasma source generates a first plasma during the first period and a second plasma during the second period. The first plasma may have higher plasma density than the second plasma. A bias voltage power supply generates a bias voltage waveform at an output that is electrically connected to a platen which supports a substrate. The bias voltage waveform having a first voltage and a second voltage may be coupled to the substrate. The first voltage may have more negative potential than the second voltage.
    Type: Application
    Filed: April 7, 2008
    Publication date: January 1, 2009
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Vikram Singh, Timothy J. Miller, Bernard G. Lindsay
  • Publication number: 20090004836
    Abstract: A plasma doping apparatus includes a pulsed power supply that generates a pulsed waveform having a first period with a first power level and a second period with a second power level. A plasma source generates a pulsed plasma with the first power level during the first period and with the second power level during the second period. A bias voltage power supply generates a bias voltage waveform at an output that is electrically connected to a platen which supports a substrate. The bias voltage waveform having a first voltage during a first period and second voltage with a negative potential that attract ions in the plasma to the substrate for plasma doping during a second period. At least one of the first and second power levels of the RF waveform is chosen to at least partially neutralize charge accumulating on the substrate.
    Type: Application
    Filed: June 29, 2007
    Publication date: January 1, 2009
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Vikram Singh, Timothy Miller, Bernard Lindsay
  • Publication number: 20090000946
    Abstract: A plasma processing apparatus includes a platen that supports a substrate for plasma processing. A RF power supply generates a multi-level RF power waveform at an output having at least a first period with a first power level and a second period with a second power level. A RF plasma source having an electrical input that is electrically connected to the output of the RF power supply generates at least a first RF plasma with the first RF power level during the first period and a second RF plasma with the second RF power level during the second period. A bias voltage power supply having an output that is electrically connected to the platen generates a bias voltage waveform that is sufficient to attract ions in the plasma to the substrate for plasma processing.
    Type: Application
    Filed: April 18, 2008
    Publication date: January 1, 2009
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Vikram Singh, Timothy J. Miller, Bernard G. Lindsay
  • Publication number: 20080318345
    Abstract: An approach that determines an ion implantation processing characteristic in a plasma ion implantation of a substrate is described. In one embodiment, there is a light source configured to direct radiation onto the substrate. A detector is configured to measure radiation reflected from the substrate. A processor is configured to correlate the measured radiation reflected from the substrate to an ion implantation processing characteristic.
    Type: Application
    Filed: June 22, 2007
    Publication date: December 25, 2008
    Inventors: Harold M. Persing, Vikram Singh, Edwin Arevalo
  • Publication number: 20080317968
    Abstract: A plasma doping apparatus includes a chamber and a plasma source that generates ions in the chamber from a dopant gas. A grating is positioned in the chamber. A platen for supporting a target is positioned in the chamber. At least one of the grating and the target are oriented so that dopant ions extracted from the grating impact the target at a non-normal angle of incidence.
    Type: Application
    Filed: August 28, 2008
    Publication date: December 25, 2008
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Vikram SINGH, James Steve Buff, Rajesh Dorai
  • Patent number: 7453059
    Abstract: A time-of-flight ion sensor for monitoring ion species in a plasma includes a housing. A drift tube is positioned in the housing. An extractor electrode is positioned in the housing at a first end of the drift tube so as to attract ions from the plasma. A plurality of electrodes is positioned at a first end of the drift tube proximate to the extractor electrode. The plurality of electrodes is biased so as to cause at least a portion of the attracted ions to enter the drift tube and to drift towards a second end of the drift tube. An ion detector is positioned proximate to the second end of the drift tube. The ion detector detects arrival times associated with the at least the portion of the attracted ions.
    Type: Grant
    Filed: February 23, 2007
    Date of Patent: November 18, 2008
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Bon-Woong Koo, Ziwei Fang, Ludovic Godet, Vikram Singh, Vassilis Panayotis Vourloumis, Bernard G. Lindsay
  • Publication number: 20080270461
    Abstract: An apparatus and method for containerization of multiple data objects within a block of a single container. The apparatus and method may pack multiple data objects together in a block of a logical container in a file system. The method may include receiving data in the form of multiple data objects to be stored in a file system, and collectively data packing the multiple data objects together in at least one block of a logical container in the file system. The block is a fundamental unit of storage space of the file system, and each block of the logical container includes multiple extents to store data from at least one data object of the multiple objects. The apparatus may include a plurality of storage devices coupled to a storage server. The storage server is configured to store the multiple data objects in at least one block of the logical container in the file system. Some data objects may be stored in multiple extents of one or more blocks depending on the size of the data object.
    Type: Application
    Filed: April 27, 2007
    Publication date: October 30, 2008
    Applicant: Network Appliance, Inc.
    Inventors: Colin Stebbins Gordon, Pratap Vikram Singh, Donald Alvin Trimmer
  • Publication number: 20080242829
    Abstract: Disclosed herein is a method comprising reacting a phenolphthalein material and a primary hydrocarbyl amine in the presence of an acid catalyst to form a reaction mixture comprising 2-hydrocarbyl-3,3-bis(4-hydroxyaryl)phthalimidine, wherein the phenolphthalein material comprises greater than or equal to 95 weight percent phenolphthalein, based on the total weight of phenolphthalein material; quenching the reaction mixture and treating the quenched reaction mixture to obtain a first solid. The first solid is then triturated with a trituration solvent and washed to obtain a second solid, wherein the second solid comprises greater than or equal to 97 weight percent 2-hydrocarbyl-3,3-bis(4-hydroxyaryl)phthalimidine, based on the total weight of the second solid. The second solid may be polymerized to form a polycarbonate.
    Type: Application
    Filed: March 30, 2007
    Publication date: October 2, 2008
    Applicant: GENERAL ELECTRIC COMPANY
    Inventors: Rajshekhar Basale, Balakrishnan Ganesan, Venkata Rama Narayanan Ganapathy Bholta, Gurram Kishan, Surendra Kulkarni, Pradeep Nadkarni, Suresh Shanmugam, Ravindra Vikram Singh
  • Publication number: 20080242873
    Abstract: Disclosed herein is a method comprising reacting a phenolphthalein material and a primary hydrocarbyl amine in the presence of an acid catalyst to form a reaction mixture comprising 2-hydrocarbyl-3,3-bis(4-hydroxyaryl)phthalimidine, wherein the phenolphthalein material comprises greater than or equal to 99 weight percent phenolphthalein, based on the total weight of the phenolphthalein material; quenching the reaction mixture and treating the quenched reaction mixture to obtain a first solid. The first solid is purified by a combination of techniques to produce a solid comprising 2-hydrocarbyl-3,3-bis(4-hydroxyaryl)phthalimidine with sufficient purity to be used as a monomer in the synthesis of clear polymers.
    Type: Application
    Filed: March 30, 2007
    Publication date: October 2, 2008
    Applicant: GENERAL ELECTRIC COMPANY
    Inventors: Rajshekhar Basale, Hyacinth Mary Bastian, Balakrishnan Ganesan, Venkata Rama Narayana Ganapathy Bhotla, Gurram Kishan, Pushpa Narayanan, Swaminathan Shubashree, Ravindra Vikram Singh
  • Publication number: 20080202914
    Abstract: A de-entrainment device separates entrained liquid from vapor in a fluid stream that flows through a chimney tray in a distillation tower. The separated liquid is collected and shielded from the fluid stream to prevent re-entrainment of the liquid in the vapor flowing upward into the tower. The chimney tray includes risers with hats that have gutters to guide liquid toward the tray deck, channels to collect and drain liquid from the top of the hats to the tray deck, and baffles extending from the risers to shield the liquid collected on the tray deck from the vapor flow.
    Type: Application
    Filed: February 19, 2008
    Publication date: August 28, 2008
    Applicant: ExxonMobil Research and Engineering Company Law Department
    Inventors: Arun K. Sharma, Theodore Sideropoulos, Berne K. Stober, Brian D. Albert, Alvin U. Chen, Vikram Singh
  • Publication number: 20080200015
    Abstract: A method of multi-step plasma doping a substrate includes igniting a plasma from a process gas. A first plasma condition is established for performing a first plasma doping step. The substrate is biased so that ions in the plasma having the first plasma condition impact a surface of the substrate thereby exposing the substrate to a first dose. The first plasma condition transitions to a second plasma condition. The substrate is biased so that ions in the plasma having the second plasma condition impact the surface of the substrate thereby exposing the substrate to a second dose. The first and second plasma conditions are chosen so that the first and second doses combine to achieve a predetermined distribution of dose across at least a portion of the substrate.
    Type: Application
    Filed: February 16, 2007
    Publication date: August 21, 2008
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Timothy Miller, Vikram Singh
  • Publication number: 20080169183
    Abstract: A plasma source having a plasma chamber with metal chamber walls contains a process gas. A dielectric window passes a RF signal into the plasma chamber. The RF signal excites and ionizes the process gas, thereby forming a plasma in the plasma chamber. A plasma chamber liner that is positioned inside the plasma chamber provides line-of-site shielding of the inside of the plasma chamber from metal sputtered by ions striking the metal walls of the plasma chamber.
    Type: Application
    Filed: January 16, 2007
    Publication date: July 17, 2008
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Richard J. Hertel, You Chia Li, Philip J. McGrail, Timothy J. Miller, Harold M. Persing, Vikram Singh
  • Patent number: 7397048
    Abstract: A technique for boron implantation is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for boron implantation. The apparatus may comprise a reaction chamber. The apparatus may also comprise a source of pentaborane coupled to the reaction chamber, wherein the source is capable of supplying a substantially pure form of pentaborane into the reaction chamber. The apparatus may further comprise a power supply that is configured to energize the pentaborane in the reaction chamber sufficiently to produce a plasma discharge having boron-bearing ions.
    Type: Grant
    Filed: September 16, 2005
    Date of Patent: July 8, 2008
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Vikram Singh, Edmund J. Winder, Harold M. Persing, Timothy Jerome Miller, Ziwei Fang, Atul Gupta
  • Publication number: 20080160212
    Abstract: A method and apparatuses for providing improved electrical contact to a semiconductor wafer during plasma processing applications are disclosed. In one embodiment, an apparatus includes a wafer platen for supporting the wafer; and a plurality of electrical contact elements, each of the plurality of electrical contact elements are configured to provide a path for supplying a bias voltage from a bias power supply to the wafer on the wafer platen. The plurality of electrical contact elements are also geometrically arranged such that at least one electrical contact element contacts an inner surface region (e.g., region between a center of wafer and a distance approximately half of the radius of the wafer) and at least one electrical contact element contacts an outer annular surface region (e.g., region between an outer edge of wafer and a distance approximately half of the radius of the wafer).
    Type: Application
    Filed: December 27, 2006
    Publication date: July 3, 2008
    Inventors: Bon-Woong Koo, Steven R. Walther, Christopher J. Leavitt, Justin Tocco, Sung-Hwan Hyun, Timothy J. Miller, Jay T. Scheuer, Atul Gupta, Vikram Singh, Deven Raj
  • Publication number: 20080160170
    Abstract: A technique for using an improved shield ring in plasma-based ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus and method for plasma-based ion implantation, such as radio frequency plasma doping (RF-PLAD). The apparatus and method may comprise a shield ring positioned on a same plane as and around a periphery of a target wafer, wherein the shield ring comprises an aperture-defining device for defining an area of at least one aperture, a Faraday cup positioned under the at least one aperture, and dose count electronics connected the Faraday cup for calculating ion dose rate. The at least one aperture may comprise at least one of a circular, arc-shaped, slit-shaped, ring-shaped, rectangular, triangular, and elliptical shape. The aperture-defining device may comprise at least one of silicon, silicon carbide, carbon, and graphite.
    Type: Application
    Filed: December 28, 2006
    Publication date: July 3, 2008
    Applicant: Varian Semiconductor Equipment Assoicates, Inc.
    Inventors: Timothy Miller, Edmund J. Winder, Richard J. Hetel, Harold M. Persing, Vikram Singh
  • Patent number: 7381786
    Abstract: Disclosed herein is a process for preparing a polymer comprising structural units derived from polycyclic dihydroxy compound having Formula (I), wherein R1 is selected from the group consisting of a cyano functionality, a nitro functionality, an aliphatic functionality having 1 to 10 carbons, an aliphatic ester functionality having 2 to 10 carbons, a cycloaliphatic ester functionality having 4 to 10 carbons and an aromatic ester functionality having 4 to 10 carbons; R2 is selected from the group consisting of a cyano functionality, a nitro functionality, an aliphatic ester functionality having 2 to 10 carbons, a cycloaliphatic ester functionality having 4 to 10 carbons and an aromatic ester functionality having 4 to 10 carbons; and each R3 and R4, at each occurrence, can be the same or different and are independently at each occurrence an aliphatic functionality having 1 to 10 carbons or a cycloaliphatic functionality having 3 to 10 carbons, “n” is an integer having a value 0 to 4 and “m” is an integer ha
    Type: Grant
    Filed: March 29, 2007
    Date of Patent: June 3, 2008
    Assignee: General Electric Company
    Inventors: Jan Henk Kamps, Jan-Pleun Lens, James A. Mahood, Arakali Srinivasarao Radhakrishna, T. Tilak Raj, Ravindra Vikram Singh
  • Patent number: 7383233
    Abstract: A method for designing an electronic transactions system and forming a proposal for doing business on a global communications network is disclosed. The invention includes reviewing existing direct sales screening processes, creating new processes, integrating new and existing screening processes, determining and implementing legal terms and conditions for electronic transactions and forming electronic media for posting. Additional steps may include identifying possible transactions based on available products and services, approaching subject matter experts to obtain data, preparing electronic templates and filter mechanisms, and presentation of proposed methods. Steps dealing with legal issues include incorporating terms and conditions of sales through the site, preparing agreements for financial institutions to govern electronic payments, and developing exclusion clauses for traditional third party contracts. Key project personnel create content for an interactive site on a global communications network.
    Type: Grant
    Filed: November 9, 2000
    Date of Patent: June 3, 2008
    Assignee: General Electric Company
    Inventors: Vikram Singh, Lisa McClung, Gilbert C. L. Leong, Karl-Heinz Hetfleisch-Wenzel