Abstract: An ion uniformity monitoring device is positioned within a plasma process chamber and includes a plurality of sensors located above and a distance away from a workpiece within the chamber. The sensors are configured to detect the number of secondary electrons emitted from a surface of the workpiece exposed to a plasma process. Each sensor outputs a current signal proportional to the detected secondary electrons. A current comparator circuit outputs a processed signal resulting from each of the plurality of current signals. The detection of the secondary electrons emitted from the workpiece during plasma processing is indicative of the uniformity characteristic across the surface of the workpiece and may be performed in situ and during on-line plasma processing.

Abstract: A first species and a second species are implanted into a conductor of a substrate, which may be copper. The first species and second species may be implanted sequentially or at least partly simultaneously. Diffusion of the first species within the conductor of the substrate is prevented by the presence of the second species. In one particular example, the first species is silicon and the second species is nitrogen, although other combinations are possible.

Abstract: An apparatus and method for containerization of multiple data objects within a block of a single container. The apparatus and method may pack multiple data objects together in a block of a logical container in a file system. The method may include receiving data in the form of multiple data objects to be stored in a file system, and collectively data packing the multiple data objects together in at least one block of a logical container in the file system. The block is a fundamental unit of storage space of the file system, and each block of the logical container includes multiple extents to store data from at least one data object of the multiple objects. The apparatus may include a plurality of storage devices coupled to a storage server. The storage server is configured to store the multiple data objects in at least one block of the logical container in the file system. Some data objects may be stored in multiple extents of one or more blocks depending on the size of the data object.

Abstract: Techniques for atomic layer deposition (ALD) are disclosed. In one particular exemplary embodiment, the techniques may be realized as a system for ALD comprising a plurality of reactors in a stacked configuration, wherein each reactor comprises a wafer holding portion for holding a target wafer, a gas assembly coupled to the plurality of reactors and configured to provide at least one gas to at least one of the plurality of reactors, and an exhaust assembly coupled to the plurality of reactors and configured to exhaust the at least one gas from the at least one of the plurality of reactors. The gas assembly may further comprise a valve assembly coupled to each of the first gas inlet, the second gas inlet, and the third gas inlet, where the valve assembly is configured to selectively release at least one of the first gas, the second gas, and the third gas.

Abstract: A method to provide a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that surface peak dopant profiles and retrograde dopant profiles are realized. The method may include an amorphization step in one embodiment.

Abstract: A method of fabricating metal interconnects with reduced electromigration includes depositing metal interconnects on a substrate comprising electronic devices. A layer is deposited on the metal interconnects. The layer is doped with at least one dopant having a dopant concentration that increases an electromigration resistance of the metal atoms.

Abstract: Several embodiments of a method for sealing pores on a porous substrate are disclosed. In one embodiment, the method comprises introducing first particles to the surface of the substrate and damaging the surface to decrease the size of the pores on the surface; introducing second particle to the surface; and forming a film on the surface covering the pores, where the film has a dielectric constant of 4 or less.

Abstract: A time-of-flight ion sensor for monitoring ion species in a plasma includes a housing. A drift tube is positioned in the housing. An extractor electrode is positioned in the housing at a first end of the drift tube so as to attract ions from the plasma. A plurality of electrodes is positioned at a first end of the drift tube proximate to the extractor electrode. The plurality of electrodes is biased so as to selectively attract ions to enter the drift tube and to drift towards a second end of the drift tube. An ion detector is positioned proximate to the second end of the drift tube. The ion detector detects arrival times associated with the at least the portion of the attracted ions.

Abstract: The present invention relates to methods and apparatuses for the operation of a distillation tower containing a controlled freezing zone and at least one distillation section. The process and tower design are utilized for the additional recovery of hydrocarbons from an acid gas. In this process, a separation process is utilized in which a multi-component feedstream is introduced into an apparatus that operates under solids forming conditions for at least one of the feedstream components. The freezable component, although typically CO2, H2S, or another acid gas, can be any component that has the potential for forming solids in the separation system. A dividing wall is added to at least a portion of the lower distillation section of the apparatus to effect the separation of at least some fraction of the hydrocarbons in that portion of the tower.

Abstract: Disclosed herein is a method comprising reacting a phenolphthalein material and a primary hydrocarbyl amine in the presence of an acid catalyst to form a reaction mixture comprising 2-hydrocarbyl-3,3-bis(4-hydroxyaryl)phthalimidine, wherein the phenolphthalein material comprises greater than or equal to 99 weight percent phenolphthalein, based on the total weight of the phenolphthalein material; quenching the reaction mixture and treating the quenched reaction mixture to obtain a first solid. The first solid is purified by a combination of techniques to produce a solid comprising 2-hydrocarbyl-3,3-bis(4-hydroxyaryl)phthalimidine with sufficient purity to be used as a monomer in the synthesis of clear polymers.

Abstract: A method for purifying a 2-aryl-3,3-bis(hydroxyaryl)phthalimidine comprises contacting a crude 2-aryl-3,3-bis(hydroxyaryl)phthalimidine with a purification agent, removing a 2-aryl-3-(aminoaryl)-3-(hydroxyaryl)phthalimidine compound from the crude 2-aryl-3,3-bis(hydroxyaryl)phthalimidine, and producing a purified 2-aryl-3,3-bis(hydroxyaryl)phthalimidine product comprising less than 200 parts per million of the 2-aryl-3-(aminoaryl)-3-(hydroxyaryl)phthalimidine compound. The purification agent is selected from the group consisting of an acidic material, an organic acid chloride, an organic anhydride, or a combination thereof. The 2-aryl-3-(aminoaryl)-3-(hydroxyaryl)phthalimidine compound has a formula: wherein each R1 is independently selected from a group consisting of a hydrocarbyl radical, a nitro radical, and a halogen atom; “a” is an integer from 0 to 4; and Ar1 and Ar2 are independently at each occurrence an aromatic radical.

Abstract: The present invention provides distance-proof N-pass Auto Negotiation systems and methods for Gigabit Ethernet. The present invention distance proofs Auto Negotiation. No matter the distance between two nodes configured according to the systems and methods of the present invention, the link at either end of the two nodes will only come up once each end has negotiated, resolved its link partner's capabilities, and received a similar success signal from the remote node.

Abstract: A first species and a second species are implanted into a conductor of a substrate, which may be copper. The first species and second species may be implanted sequentially or at least partly simultaneously. Diffusion of the first species within the conductor of the substrate is prevented by the presence of the second species. In one particular example, the first species is silicon and the second species is nitrogen, although other combinations are possible.

Abstract: A method and apparatus are directed to providing a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that shallow and abrupt junctions in vertical and lateral directions are realized that are critical to device scaling in plasma doping systems.

Abstract: A method of doping includes depositing a layer of dopant material on nonplanar and planar features of a substrate. Inert ions are generated from an inert feed gas. The inert ions are extracted towards the substrate where they physically knock the dopant material into both the planar and nonplanar features of the substrate.

Abstract: A method of in-situ monitoring of a plasma doping process includes generating a plasma comprising dopant ions in a chamber proximate to a platen supporting a substrate. A platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. A dose of ions attracted to the substrate is measured. At least one sensor measurement is performed to determine the condition of the plasma chamber. In addition, at least one plasma process parameter is modified in response to the measured dose and in response to the at least one sensor measurement.

Abstract: A method of plasma doping includes generating a plasma comprising dopant ions proximate to a platen supporting a substrate in a plasma chamber. The platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. At least one sensor measuring data related to charging conditions favorable for forming an electrical discharge is monitored. At least one plasma process parameter is modified in response to the measured data, thereby reducing a probability of forming an electrical discharge.

Abstract: A combination of differently sized structured packings in the wash zone of distillation towers is provides advantages at high vapor rates. The use of a large crimp structured packing below a smaller crimp size structured packing is advantageous for vacuum crude unit service where fouling resistance is desirable and liquid entrainment into the wash zone is a problem at high vapor rates. The tower may be operated at high vapor flux rates or C 0.4 ft/sec or higher (0.12 m/sec). An unexpected characteristic of the combinations is that the entrainment increases only slowly with increasing vapor flux rate up to Cs values of at least 0.55 ft/sec (0.17 m.sec), as compared to other packings such as random packing, grid packing and combinations of grid packing with structured packing which allow entrainment to increase sharply at high vapor rates.

Abstract: Disclosed herein is a method comprising reacting a phenolphthalein material and a primary hydrocarbyl amine in the presence of an acid catalyst to form a reaction mixture comprising 2-hydrocarbyl-3,3-bis(4-hydroxyaryl)phthalimidine, wherein the phenolphthalein material comprises greater than or equal to 95 weight percent phenolphthalein, based on the total weight of phenolphthalein material; quenching the reaction mixture and treating the quenched reaction mixture to obtain a first solid. The first solid is then triturated with a trituration solvent and washed to obtain a second solid, wherein the second solid comprises greater than or equal to 97 weight percent 2-hydrocarbyl-3,3-bis(4-hydroxyaryl)phthalimidine, based on the total weight of the second solid. The second solid may be polymerized to form a polycarbonate.

Abstract: A plasma processing apparatus includes a process chamber, a source configured to generate a plasma in the process chamber, and a platen configured to support a workpiece in the process chamber. The platen is biased with a pulsed platen signal having pulse ON and OFF time periods to accelerate ions from the plasma towards the workpiece during the pulse ON time periods and not the pulse OFF time periods. A plate is positioned in the process chamber. The plate is biased with a plate signal to accelerate ions from the plasma towards the plate to cause an emission of secondary electrons from the plate during at least a portion of one of the pulse OFF time periods of the pulsed platen signal to at least partially neutralize charge accumulation on the workpiece.