Abstract: A microelectronic device comprises a microelectronic device structure comprising a section comprising page buffers, and an additional section horizontally neighboring the section and comprising page buffer drivers and a timing delay chain coupled to the page buffer drivers. Each of the page buffer drivers is coupled to different group of the page buffers than each other of the page buffer drivers. The timing delay chain comprises timing delay circuits coupled in series with one another. Each of the timing delay circuits is configured to adjustably delay propagation of a control signal therethrough. Memory devices, methods of operating memory devices, and electronic systems are also described.

Abstract: The present disclosure includes apparatuses and methods for determining soft data. A number of embodiments include determining soft data associated with a data state of a memory cell. In a number of embodiments, the soft data may be determined by performing a single stepped sense operation on the memory cell.

Abstract: Described are systems and methods for performing partial block erase operations. An example memory device comprises: a memory array comprising a plurality of memory cells electrically coupled to a plurality of wordlines; and a controller coupled to the memory array, the controller to perform operations comprising: identifying, in a memory device, a block comprising a plurality of memory cells; estimating, in the block, a number of pages having a predefined program state; determining, based on the number of pages having the predefined program state, an erase verify voltage to be applied to the block; causing an erase operation to be performed with respect to the block; and causing an erase verify operation to be performed, using the erase verify voltage, with respect to the block.

Abstract: A memory device comprising an array of memory cells organized into a set of sub-blocks and a set of wordlines. Control logic is operatively coupled with the array of memory cells, the control logic to perform operations including: receiving a program command from a processing device, the program command including information indicative of a physical address associated with a retired wordline of the set of wordlines; in response to detecting the information within the program command, generating dummy data that is one of pseudo-random data, all one values, or all zero values; and causing the dummy data to be programmed to memory cells of multiple sub-blocks of the set of sub-blocks that are selectively connected to the retired wordline.

Abstract: A memory system includes a memory device comprising a content addressable memory (CAM) block storing a plurality of stored search keys. The memory system further includes a processing device that receives an input search key and identifies, from the plurality of stored search keys in the CAM block, multiple redundant copies of a stored search key that match the input search key. The processing device further determining whether a number of the multiple redundant copies of the stored search key that match the input search key satisfies a threshold criterion. Responsive to the number of the multiple redundant copies of the stored search key that match the input search key satisfying the threshold criterion, the processing device determines a match result for the input search key.

Abstract: Control logic in a memory device receives a request to read data from a memory array of a memory device, the request comprising an indication of a segment of the memory array where the data is stored, and determines whether a write temperature associated with the data is stored in a flag byte corresponding to the segment of the memory array. Responsive to determining that the write temperature associated with the data is stored in the flag byte, the control logic determines a cross-temperature for the data based on the write temperature and a read temperature at a time when the request to read the data is received, determines a program/erase cycle count associated with the segment of the memory array, and determines, based on the cross-temperature and the program/erase cycle count, whether to perform a corrective action to calibrate a read voltage level to be applied to the memory array to read the data from the segment.

Abstract: Control logic in a memory device causes a first pulse to be applied to a plurality of word lines coupled to respective memory cells in a memory array during an erase operation. The control logic further causes a second pulse to be applied to a first set of word lines of the plurality of word lines to bias the first set of word lines to a first voltage. The control logic can cause a third pulse to be applied to a second set of word lines of the plurality of word lines to bias the second set of word lines to a second voltage and cause a fourth pulse to be applied to a source line of the memory array to erase the respective memory cells coupled to the first set of word lines and to program the respective memory cells coupled to the second set of word lines.

Abstract: Control logic in a memory device initiates a program operation on a memory array comprising a top deck and bottom deck. During a seeding phase of the program operation, the control logic causes a first positive voltage to be applied to a first plurality of wordlines of the memory array, wherein the first plurality of wordlines is associated with memory cells in the bottom deck of the memory array that are in a programmed state, and causes a ground voltage to be applied to a second plurality of wordlines of the memory array, wherein the second plurality of wordlines is associated with memory cells in the top deck of the memory array. At an end of the seeding phase of the program operation, the control logic electrically separates the top deck from the bottom deck and causes a program voltage to be applied to a selected wordline of the memory array during an inhibit phase of the program operation, wherein the selected wordline is associated with respective memory cells in the top deck of the memory array.

Abstract: A method includes receiving, by control logic of a memory device, a copyback clear command from a processing device; causing, in response to the copyback clear command, a page buffer to perform a dual-strobe read operation on first memory cells configured as single-level cells, the dual-strobe read operation including a soft strobe at a first threshold voltage and a hard strobe at a second threshold voltage that are sensed between threshold voltage distributions of the first memory cells; causing the page buffer to determine a number of one bit values within the threshold voltage distributions detected in a threshold voltage range between the first/second threshold voltages; and causing, in response to the number of one bit values not satisfying a threshold criterion, a copyback of data in the first memory cells to second memory cells configured as high-level cells without intervention from the processing device.

Abstract: Described are systems and methods for implementing continuous memory programming operations. An example memory device comprises: a memory array comprising a plurality of memory cells electrically coupled to a plurality of conductive lines; and a controller coupled to the memory array.

Abstract: Described are systems and methods for performing partial block erase operations. An example memory device comprises: a memory array comprising a plurality of memory cells electrically coupled to a plurality of wordlines; and a controller coupled to the memory array, the controller to perform operations comprising: identifying, in a memory device, a block comprising a plurality of memory cells; estimating, in the block, a number of pages having a predefined program state; determining, based on the number of pages having the predefined program state, an erase verify voltage to be applied to the block; causing an erase operation to be performed with respect to the block; and causing an erase verify operation to be performed, using the erase verify voltage, with respect to the block.

Abstract: Processing logic in a memory device receives a command to execute a set of read operations having read voltage levels corresponding to a programming distribution associated with the memory device. A set of memory bit counts is determined, where each memory bit count corresponds to a respective bin of a set of bins associated with the multiple read voltage levels of the set of read operations. A valley center bin having a minimum memory bit count of the set of memory bit counts is determined. The processing logic determines that the minimum memory bit count of the valley center bin satisfies a condition and an adjusted read voltage level associated with the valley center bin is identified in response to the condition being satisfied.

Abstract: A memory device includes a page buffer with multiple registers and a memory array, configured as single-level cell (SLC) memory, including a set of sub-blocks coupled with the page buffer. Control logic is operatively coupled with the page buffer and causes a first page of SLC data to be stored in the multiple registers. The control logic causes a subsequent page of the SLC data to be stored in the multiple registers. The control logic causes the subsequent page and the first page of the SLC data stored in the multiple registers to be concurrently programmed to the set of sub-blocks. The control logic causes at least some of the operations for programming the first page and the subsequent page to the set of sub-blocks to be performed in parallel.

Abstract: Control logic in a memory device receives a request to read data from a memory array of a memory device, the request comprising an indication of a segment of the memory array where the data is stored, and determines whether a write temperature associated with the data is stored in a flag byte corresponding to the segment of the memory array. Responsive to determining that the write temperature associated with the data is stored in the flag byte, the control logic determines a cross-temperature for the data based on the write temperature and a read temperature at a time when the request to read the data is received, determines a program/erase cycle count associated with the segment of the memory array, and determines, based on the cross-temperature and the program/erase cycle count, whether to perform a corrective action to calibrate a read voltage level to be applied to the memory array to read the data from the segment.

Abstract: A microelectronic device comprises a microelectronic device structure comprising a section comprising page buffers, and an additional section horizontally neighboring the section and comprising page buffer drivers and a timing delay chain coupled to the page buffer drivers. Each of the page buffer drivers is coupled to different group of the page buffers than each other of the page buffer drivers. The timing delay chain comprises timing delay circuits coupled in series with one another. Each of the timing delay circuits is configured to adjustably delay propagation of a control signal therethrough. Memory devices, methods of operating memory devices, and electronic systems are also described.

Abstract: An apparatus includes circuitry configured to generate multiple results, each result using a different read voltage, in response to one or each received data access command. The multiple read results may be used to dynamically calibrate a read voltage assigned to generate a read result in response to a read command.

Abstract: A system includes a memory device having one or more planes and a first set of voltage regulators coupled to each plane of the one or more planes, where the first set of voltage regulators is shared by the one or more planes. The system includes a second set of voltage regulators coupled to a plane of the one or more planes configured to supply a respective voltage to one or more conductive lines responsive to a memory access operation request. The system includes a switch, at the plane of the one or more planes, coupled with a first voltage regulator of the first set of voltage regulators, a second voltage regulator of the second set of voltage regulators, and a first conductive line, the switch configured to selectively couple the second voltage regulator of the second set of voltage regulators to the first conductive line.

Abstract: Control logic in a memory device initiates a programming operation to program a set of memory cells of the memory device to a target programming level of a set of programming levels. During execution of the programming operation, a programming status associated with the set of memory cells. In response to determining the programming status satisfies a condition, causing a release of a set of data associated with the programming operation from a cache register.

Abstract: A memory device includes a page buffer with a cache register and data registers, a memory array with a set of sub-blocks of memory cells configured as single-level cell (SLC) memory, and control logic. The control logic performs operations including: causing a first page of SLC data to be stored in the cache register; causing the first page of the SLC data to be moved from the cache register to a first data register; causing a subsequent page of the SLC data to be stored in the cache register; causing the SLC data stored in the cache register and in the data registers to be concurrently programmed to the set of sub-blocks, where the first page is programmed to a first sub-block and the subsequent page is programmed to a subsequent sub-block; and causing a subset of the operations for programming the set of sub-blocks to be performed in parallel.

Abstract: Program verify can be performed simultaneously on multiple subblocks in a storage device. The program verify occurs after a program operation of the storage cells. The program verify can include application of a verify read pulse to multiple subblocks simultaneously and then a count a number of bitlines of the multiple subblocks that do not discharge in response to the verify read pulse. The program verify passes if the count is within an expected range, instead of requiring all storage cells to pass program verify before moving on. If the number of bitlines not discharging is outside the expected range, the system can perform a second program pass.