Patents by Inventor Viren KALSEKAR

Viren KALSEKAR has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220130649
    Abstract: Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a lid plate seated on the chamber body along a first surface of the lid plate. The lid plate may define a plurality of apertures through the lid plate. The lid plate may further define a recess about each aperture of the plurality of apertures in the first surface of the lid plate. Each recess may extend partially through a thickness of the lid plate. The systems may include a plurality of lid stacks equal to a number of apertures of the plurality of apertures. Each recess may receive at least a portion of one of the lid stacks of the plurality of lid stacks. The plurality of lid stacks may at least partially define a plurality of processing regions vertically offset from the transfer region.
    Type: Application
    Filed: October 22, 2020
    Publication date: April 28, 2022
    Applicant: Applied Materials, Inc.
    Inventor: Viren Kalsekar
  • Publication number: 20220093426
    Abstract: Exemplary substrate processing systems may include a base. The systems may include a chamber body having a transfer region housing that defines a transfer region. The transfer region housing may include a first portion and a second portion. The systems may include a lid assembly positioned atop the chamber body. The lid assembly may include a lid and a lid stack. The systems may include one or more lift mechanisms that elevate the first portion of the transfer region housing and at least a portion of the lid assembly relative to the base. The first portion and the second portion may mate with one another when the transfer region housing is in an operational configuration. The first portion and the second portion may be separated when the first portion of the transfer region housing is elevated.
    Type: Application
    Filed: September 21, 2020
    Publication date: March 24, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Samuel W. Shannon, Luke Bonecutter, Viren Kalsekar, Chahal Neema
  • Publication number: 20220020615
    Abstract: Exemplary substrate processing systems may include a plurality of processing regions. The systems may include a transfer region housing defining a transfer region fluidly coupled with the plurality of processing regions. The systems may include a plurality of substrate supports. Each substrate support of the plurality of substrate supports may be vertically translatable between the transfer region and an associated processing region of the plurality of processing regions. The systems may include a transfer apparatus including a rotatable shaft extending through the transfer region housing. The transfer apparatus may also include an end effector coupled with the rotatable shaft. The systems may include an exhaust foreline including a plurality of foreline tails. Each foreline tail of the plurality of foreline tails may be fluidly coupled with a separate processing region of the plurality of processing regions. The systems may include a plurality of throttle valves.
    Type: Application
    Filed: July 19, 2020
    Publication date: January 20, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Nitin Pathak, Vinay K. Prabhakar, Badri N. Ramamurthi, Viren Kalsekar, Juan Carlos Rocha-Alvarez
  • Publication number: 20220013373
    Abstract: Exemplary substrate support assemblies may include a platen characterized by a first surface configured to support a semiconductor substrate. The assemblies may include a first stem section coupled with a second surface of the platen opposite the first surface of the platen. The assemblies may include a second stem section coupled with the first stem section. The second stem section may include a housing and a rod holder disposed within the housing. The second stem section may include a connector seated within the rod holder at a first end of the connector. The second stem section may include a heater rod disposed within the first end of the connector and a heater extension rod coupled with the connector at a second end of the connector. The second stem section may include an RF rod and an RF strap coupling the RF rod with an RF extension rod.
    Type: Application
    Filed: July 7, 2020
    Publication date: January 13, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Jian Li, Edward P. Hammond, Viren Kalsekar, Vidyadharan Srinivasa Murthy Bangalore, Juan Carlos Rocha-Alvarez
  • Publication number: 20210335635
    Abstract: Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a first lid plate seated on the chamber body along a first surface of the first lid plate. The first lid plate may define a plurality of apertures through the first lid plate. The systems may include a plurality of lid stacks equal to a number of apertures of the plurality of apertures. The plurality of lid stacks may at least partially define a plurality of processing regions vertically offset from the transfer region. The systems may include a second lid plate coupled with the plurality of lid stacks. The plurality of lid stacks may be positioned between the first lid plate and the second lid plate. A component of each lid stack of the plurality of lid stacks may be coupled with the second lid plate.
    Type: Application
    Filed: April 23, 2020
    Publication date: October 28, 2021
    Applicant: Applied Materials, Inc.
    Inventor: Viren Kalsekar
  • Publication number: 20210320017
    Abstract: Exemplary substrate processing systems may include a plurality of processing regions. The systems may include a transfer region housing defining a transfer region fluidly coupled with the plurality of processing regions. The systems may include a plurality of substrate supports, and each substrate support of the plurality of substrate supports may be vertically translatable between the transfer region and an associated processing region of the plurality of processing regions. The systems may include a transfer apparatus including a rotatable shaft extending through the transfer region housing. The transfer apparatus may include an end effector coupled with the rotatable shaft. The end effector may include a central hub defining a central aperture fluidly coupled with a purge source. The end effector may also include a plurality of arms having a number of arms equal to a number of substrate supports of the plurality of substrate supports.
    Type: Application
    Filed: April 9, 2020
    Publication date: October 14, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Nitin Pathak, Vinay Prabhakar, Badri N. Ramamurthi, Viren Kalsekar, Tuan A. Nguyen, Juan Carlos Rocha-Alvarez
  • Publication number: 20210320018
    Abstract: Exemplary substrate processing systems may include chamber body defining a transfer region. The systems may include a lid plate seated on the chamber body. The lid plate may define a first plurality of apertures through the lid plate and a second plurality of apertures through the lid plate. The systems may include a plurality of lid stacks equal to a number of apertures of the first plurality of apertures defined through the lid plate. Each lid stack of the plurality of lid stacks may include a choke plate seated on the lid plate along a first surface of the choke plate. The choke plate may define a first aperture axially aligned with an associated aperture of the first plurality of apertures. The choke plate may define a second aperture axially aligned with an associated aperture of the second plurality of apertures.
    Type: Application
    Filed: April 14, 2020
    Publication date: October 14, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Siva Chandrasekar, Satish Radhakrishnan, Rajath Kumar Lakkenahalli Hiriyannaiah, Viren Kalsekar, Vinay Prabhakar
  • Publication number: 20210066039
    Abstract: One or more embodiments described herein generally relate to a semiconductor processing apparatus that utilizes high radio frequency (RF) power to improve uniformity. The semiconductor processing apparatus includes an RF powered primary mesh and an RF powered secondary mesh, which are disposed in a substrate supporting element. The secondary RF mesh is positioned underneath the primary RF mesh. A connection assembly is configured to electrically couple the secondary mesh to the primary mesh. RF current flowing out of the primary mesh is distributed into multiple connection junctions. As such, even at high total RF power/current, a hot spot on the primary mesh is prevented because the RF current is spread to the multiple connection junctions. Accordingly, there is less impact on substrate temperature and film non-uniformity, allowing much higher RF power to be used without causing a local hot spot on the substrate being processed.
    Type: Application
    Filed: August 7, 2020
    Publication date: March 4, 2021
    Inventors: Jian LI, Viren KALSEKAR, Paul BRILLHART, Juan Carlos ROCHA-ALVAREZ, Vinay K. PRABHAKAR
  • Patent number: 10923334
    Abstract: One or more embodiments described herein generally relate to selective deposition of substrates in semiconductor processes. In these embodiments, a precursor is delivered to a process region of a process chamber. A plasma is generated by delivering RF power to an electrode within a substrate support surface of a substrate support disposed in the process region of the process chamber. In embodiments described herein, delivering the RF power at a high power range, such as greater than 4.5 kW, advantageously leads to greater plasma coupling to the electrode, resulting in selective deposition to the substrate, eliminating deposition on other process chamber areas such as the process chamber side walls. As such, less process chamber cleans are necessary, leading to less time between depositions, increasing throughput and making the process more cost-effective.
    Type: Grant
    Filed: May 3, 2019
    Date of Patent: February 16, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Satya Thokachichu, Edward P. Hammond, IV, Viren Kalsekar, Zheng John Ye, Sarah Michelle Bobek, Abdul Aziz Khaja, Vinay K. Prabhakar, Venkata Sharat Chandra Parimi, Prashant Kumar Kulshreshtha, Kwangduk Douglas Lee
  • Publication number: 20210043455
    Abstract: In one or more embodiments, a method for depositing a carbon hard-mask material by plasma-enhanced chemical vapor deposition (PECVD) includes heating a substrate contained within a process chamber to a temperature in a range from about 100 C to about 700 C and producing a plasma with a power generator emitting an RF power of greater than 3 kW. In some examples, the temperature is in a range from about 300C to about 700C and the RF power is greater than 3 kW to about 7 kW. The method also includes flowing a hydrocarbon precursor into the plasma within the process chamber and forming a carbon hard-mask layer on the substrate at a rate of greater than 5,000/min, such as up to about 10,000/min or faster.
    Type: Application
    Filed: March 21, 2019
    Publication date: February 11, 2021
    Inventors: Byung Seok KWON, Prashant Kumar KULSHRESHTHA, Kwangduk Douglas LEE, Bushra AFZAL, Sungwon HA, Vinay K. PRABHAKAR, Viren KALSEKAR, Satya Teja Babu THOKACHICHU, Edward P. HAMMOND, IV
  • Publication number: 20210017645
    Abstract: Embodiments of the present invention generally relate to an apparatus for reducing arcing during thick film deposition in a plasma process chamber. In one embodiment, an edge ring including an inner edge diameter that is about 0.28 inches to about 0.38 inches larger than an outer diameter of a substrate is utilized when depositing a thick (greater than two microns) layer on the substrate. The layer may be a dielectric layer, such as a carbon hard mask layer, for example an amorphous carbon layer. With the 0.14 inches to 0.19 inches gap between the outer edge of substrate and the inner edge of the edge ring during the deposition of the thick layer, substrate support surface arcing is reduced while the layer thickness uniformity is maintained.
    Type: Application
    Filed: April 9, 2019
    Publication date: January 21, 2021
    Inventors: Lu XU, Byung Seok KWON, Viren KALSEKAR, Vinay K. PRABHAKAR, Prashant Kumar KULSHRESHTHA, Dong Hyung LEE, Kwangduk Douglas LEE
  • Publication number: 20210013069
    Abstract: Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a first lid plate seated on the chamber body along a first surface of the first lid plate and defining a plurality of apertures through the plate. The first lid plate may also define a recessed ledge about each aperture. The systems may include a plurality of lid stacks equal to a number of apertures of the plurality of apertures. Each lid stack may be seated on the first lid plate on a separate recessed ledge of the first lid plate. The plurality of lid stacks may at least partially define a plurality of processing regions vertically offset from the transfer region. The systems may also include a second lid plate coupled with the plurality of lid stacks.
    Type: Application
    Filed: July 7, 2020
    Publication date: January 14, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Viren Kalsekar, Vinay Prabhakar
  • Publication number: 20200373132
    Abstract: A substrate pedestal includes a thermally conductive substrate support including a mesh, a thermally conductive shaft including a plurality of conductive rods therein, each conductive rod having a first end and a second end, and a sensor. The first end of each conductive rod is electrically coupled to the mesh, and the sensor is disposed between the first and second ends of each conductive rod and configured to detect current flow through each conductive rod.
    Type: Application
    Filed: March 10, 2020
    Publication date: November 26, 2020
    Inventors: Viren KALSEKAR, Vinay K. PRABHAKAR, Venkata Sharat Chandra PARIMI
  • Publication number: 20200362457
    Abstract: The present disclosure relates to systems and methods for reducing the formation of hardware residue and minimizing secondary plasma formation during substrate processing in a process chamber. The process chamber may include a gas distribution member configured to flow a first gas into a process volume and generate a plasma therefrom. A second gas is supplied into a lower region of the process volume. Further, an exhaust port is disposed in the lower region to remove excess gases or by-products from the process volume during or after processing.
    Type: Application
    Filed: April 24, 2020
    Publication date: November 19, 2020
    Inventors: Liangfa HU, Prashant Kumar KULSHRESHTHA, Anjana M. PATEL, Abdul Aziz KHAJA, Viren KALSEKAR, Vinay K. PRABHAKAR, Satya Teja Babu THOKACHICHU, Byung Seok KWON, Ratsamee LIMDULPAIBOON, Kwangduk Douglas LEE, Ganesh BALASUBRAMANIAN
  • Publication number: 20190341232
    Abstract: Embodiments of the present disclosure generally relate to substrate supports for process chambers and RF grounding configurations for use therewith. Methods of grounding RF current are also described. A chamber body at least partially defines a process volume therein. A first electrode is disposed in the process volume. A pedestal is disposed opposite the first electrode. A second electrode is disposed in the pedestal. An RF filter is coupled to the second electrode through a conductive rod. The RF filter includes a first capacitor coupled to the conductive rod and to ground. The RF filter also includes a first inductor coupled to a feedthrough box. The feedthrough box includes a second capacitor and a second inductor coupled in series. A direct current (DC) power supply for the second electrode is coupled between the second capacitor and the second inductor.
    Type: Application
    Filed: April 23, 2019
    Publication date: November 7, 2019
    Inventors: Satya THOKACHICHU, Edward P. HAMMOND, IV, Viren KALSEKAR, Zheng John YE, Abdul Aziz KHAJA, Vinay K. PRABHAKAR
  • Publication number: 20190341227
    Abstract: One or more embodiments described herein generally relate to selective deposition of substrates in semiconductor processes. In these embodiments, a precursor is delivered to a process region of a process chamber. A plasma is generated by delivering RF power to an electrode within a substrate support surface of a substrate support disposed in the process region of the process chamber. In embodiments described herein, delivering the RF power at a high power range, such as greater than 4.5 kW, advantageously leads to greater plasma coupling to the electrode, resulting in selective deposition to the substrate, eliminating deposition on other process chamber areas such as the process chamber side walls. As such, less process chamber cleans are necessary, leading to less time between depositions, increasing throughput and making the process more cost-effective.
    Type: Application
    Filed: May 3, 2019
    Publication date: November 7, 2019
    Inventors: Satya THOKACHICHU, Edward P. HAMMOND, IV, Viren KALSEKAR, Zheng John YE, Sarah Michelle BOBEK, Abdul Aziz KHAJA, Vinay K. PRABHAKAR, Venkata Sharat Chandra PARIMI, Prashant Kumar KULSHRESHTHA, Kwangduk Douglas LEE