Patents by Inventor Vishnu K. Khemka

Vishnu K. Khemka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6528849
    Abstract: A MOSFET includes a source region, a first channel region proximate to the source region, a first gate region adjacent to the first base region, a drain region, a second channel region proximate to the drain region, and a second gate region adjacent to the second channel region. A first channel is formed within the first channel region in dependence upon a first voltage applied to the first gate region with respect to at least a first portion of the source region, and a second channel is formed within the second channel region in dependence upon a second voltage applied to the second gate region with respect to at least a second portion of the drain region. The MOSFET further includes a drift region coupled between the first channel region and the second channel region, where the drift region includes a set of alternating columns, each of which is also coupled between the first base region and the second base region.
    Type: Grant
    Filed: August 31, 2000
    Date of Patent: March 4, 2003
    Assignee: Motorola, Inc.
    Inventors: Vishnu K. Khemka, Vijay Parthasarathy, Ronghua Zhu, Amitava Bose