Abstract: A one time programmable memory includes isolated gate transistors that may be programmed by subjecting the isolated gate transistors to voltage conditions that degrade characteristics of the isolated gate transistors. The degraded characteristics may be sensed to read the memory.

Abstract: In some embodiments, a circuit is provided that comprises a dynamic circuit and a body bias circuit. The dynamic circuit has a keeper transistor. The body bias circuit is coupled to the keeper transistor and is configured to body bias the keeper transistor in accordance with a leakage associated with the dynamic circuit. Other embodiments are disclosed herein.

Abstract: In some embodiments, a chip is provided that comprises a group of transistors and a body bias generator. The group of transistors is coupled to the body bias generator. The body bias generator is configured to body bias the transistors at a level based on one or more measured parameters associated with the chip and on an operating mode. Other embodiments are disclosed herein and/or are otherwise claimed.

Abstract: In one embodiment, a memory array is provided comprising one or more columns each comprising a plurality of bit cells divided into groups of bit cells with each group of bit cells controllably coupled to a separate bit line.

Abstract: An interconnect architecture is provided to reduce power consumption. A first driver may drive signals on a first interconnect and a second driver may drive signals on a second interconnect. The first driver may be powered by a first voltage and the second driver may be powered by a second voltage different than the first voltage.

Abstract: An apparatus and method are provided for limiting a drop of a supply voltage in an SRAM device to retain the state of the memory during an IDLE state. The apparatus may include a memory array, a sleep device, and a clamping circuit. The clamping circuit may be configured to activate the sleep device when a voltage drop across the memory array falls below a preset voltage and the memory array is in an IDLE state.

Abstract: Embodiments relate to a Floating Body Dynamic Random Access Memory (FBDRAM). The FBDRAM utilizes a purge line to reset a FBDRAM cell, prior to writing data to the FBDRAM cell.

Abstract: A central processing unit (CPU) is disclosed. The CPU includes a CPU die; and a voltage regulator die bonded to the CPU die in a three dimensional packaging layout.

Abstract: Different embodiments of a one-time-programmable antifuse cell are provided in this disclosure. In one embodiment, a circuit is provided that includes an antifuse element, a high voltage device, and a sense circuit. The antifuse element has a voltage supply terminal to be at a sense voltage during sensing/reading and a higher programming voltage during programming. The sense circuit is configured to enable programming the antifuse element during programming and to sense the state of the antifuse element during sensing. The high voltage device is coupled between the antifuse element and the sense circuit to couple the antifuse element to the sense circuit during programming and sensing and to protectively shield the sense circuit from the higher programming voltage during programming.

Abstract: Apparatuses and methods for delaying thermal throttling of processor devices by decreasing threshold voltages are disclosed.

Abstract: A method is described that comprises flowing current from one region of a coil to another region of the coil. The flowing induces—through flux linkage—a voltage across a second coil. A second current substantially does not flow through the second coil. The method also includes measuring the current with a first voltage at the another region of the coil and a second voltage at the second coil.

Abstract: A DRAM memory cell uses a single transistor to perform the data storage and switching functions of a conventional cell. The transistor has a floating channel body which stores a potential that corresponds to one of two digital data values. The transistor further includes a gate connected to a first word line, a drain connected to a second word line, and a source connected to a bit line. By setting the word and bit lines to specific voltage states, the channel body stores a digital one potential as a result of impact ionization and a digital zero value as a result of forward bias of body-to-source junction.

Abstract: A timing circuit independently controls placement of the positive and negative edges of a periodic signal. This signal may then be used to control a wide variety of integrated circuit applications. The timing circuit includes separate programmable delay lines and a signal processor. Each delay line delays an input clock signal by a different increment of time. The signal processor then generates a timing signal from the clock signal, where the timing signal has a first edge controlled by the first delayed clock signal and a second edge controlled by the second delayed clock signal. The edges may be controlled so that the timing signal assumes different logical values for different amounts of time, thereby customizing the signal to any application. An example of one application includes using the timing signal control switching in a DC-DC converter.

Abstract: A method is described that induced dielectric breakdown within a capacitor's dielectric material while driving a current through the capacitor. The current is specific to data that is being written into the capacitor. The method also involves reading the data by interpreting behavior of the capacitor that is determined by the capacitor's resistance, where, the capacitor's resistance is a consequence of the inducing and the driving.

Abstract: A central processing unit (CPU) is disclosed. The CPU includes a CPU die; and a voltage regulator/converter die bonded to the CPU die in a three dimensional packaging layout.

Abstract: A method and apparatus for multi-phase transformers are described. In one embodiment, a coupled inductor topology for the multi-phase transformers comprising N primary inductors. In one embodiment, each primary inductor is coupled to one of N input nodes and a common output node. The transformer further includes N?1 secondary inductors coupled in series between one input node and the common output node. In one embodiment, the N?1 secondary inductors are arranged to couple energy from N?1 of the primary inductors to provide a common node voltage as an average of N input node voltages, wherein N is an integer greater than two. Other embodiments are described and claimed.

Abstract: A central processing unit (CPU) is disclosed. The CPU includes a CPU die; and a power management die bonded to the CPU die in a three dimensional packaging layout.

Abstract: A controller for providing within-die body bias includes a signal generator for generating different bias signals and a selector to route the bias signals to one or more specific types of transistors within the sections of the die. The controller may further include a plurality of secondary body bias generators, each disposed in a respective one of the die sections for translating the signals from the generator into local bias values. Through this controller, adaptive body bias techniques may be implemented which improve the bin split and overall performance of fabricated processors or other types of circuits formed on the die.

Abstract: A system to write to a plurality of memory cells coupled to a word line, each of the plurality of memory cells comprising a transistor having a source, a drain, a body and a gate coupled to the word line. Some embodiments provide biasing of one or more of the plurality of memory cells in saturation to inject charge carriers into the body of the one or more of the plurality of memory cells, and biasing of each of the plurality of memory cells in accumulation to tunnel charge carriers from the body of each of the plurality of memory cells to the gate of each of the plurality of memory cells.

Abstract: Apparatus, system and method for managing power of a main circuitry disposed on a main substrate using a control circuitry disposed on a control substrate, in a stacked relationship with the main substrate, are described herein.