Abstract: A semiconductor device includes a recess defined in a dielectric layer, the recess having an upper sidewall portion extending to an upper corner of the recess and a lower sidewall portion below the upper sidewall portion. An interconnect structure is positioned in the recess. The interconnect structure includes a continuous liner layer having upper and lower layer portions positioned laterally adjacent to the upper and lower sidewall portions, respectively. The upper layer portion includes an alloy of a first transition metal and a second transition metal and the lower layer portion includes the second transition metal but not the first transition metal. The interconnect structure also includes a fill material substantially filling the recess, wherein the second transition metal has a higher wettability for the fill material than the alloy.

Abstract: The present disclosure is generally directed to multi-layer barrier layer stacks for interconnect structures that may be used to reduce mechanical stress levels between the interconnect structure and a dielectric material layer in which the interconnect structure is formed. One illustrative method disclosed herein includes forming a recess in a dielectric layer of a substrate and forming an adhesion barrier layer including an alloy of tantalum and at least one transition metal other than tantalum to line the recess, wherein forming the adhesion barrier layer includes creating a first stress level across a first interface between the adhesion barrier layer and the dielectric layer. The method also includes forming a stress-reducing barrier layer including tantalum over the adhesion barrier layer, wherein the stress-reducing barrier layer reduces the first stress level to a second stress level less than the first stress level, and filling the recess with a fill layer.

Abstract: A semiconductor chip includes at least one integrated circuit device and a bond pad that is electrically connected to the at least one integrated circuit device. The bond pad has an irregular configuration when viewed from above that corresponds to a first area portion that is defined by a first substantially regular geometric shape when viewed from above and a second area portion adjacent to the first area portion. The second area portion is located at a greater distance from a centerline of the semiconductor chip than any part of the first area portion when viewed from above, and two sides of the first area portion are substantially aligned with and substantially flush with two respective sides of the second area portion.

Abstract: A method for forming an interconnect structure includes forming a recess in a dielectric layer of a substrate. An adhesion barrier layer is formed to line the recess. A first stress level is present across a first interface between the adhesion barrier layer and the dielectric layer. A stress-reducing barrier layer is formed over the adhesion barrier layer. The stress-reducing barrier layer reduces the first stress level to provide a second stress level, less than the first stress level, across a second interface between the adhesion barrier layer, the stress-reducing barrier layer, and the dielectric layer. The recess is filled with a fill layer.

Abstract: A method for forming an interconnect structure includes forming a recess in a dielectric layer of a substrate, forming a first transition metal layer in the recess on corner portions of the recess, and forming a second transition metal layer in the recess over the first transition metal layer to line the recess. The method further includes filling the recess with a fill layer and annealing the substrate so that the first transition metal layer and the second transition metal layer form an alloy portion proximate the corner portions during the annealing, the alloy portion having a reduced wettability for a material of the fill layer than the second transition metal. Additionally, the method includes polishing the substrate to remove portions of the fill layer extending above the recess.

Abstract: A semiconductor chip includes a composite bond pad that is electrically connected to at least one integrated circuit device. The composite bond pad includes a first bond pad portion having a first upper surface corresponding to a first surface area that is defined by a first substantially regular geometric shape when viewed from above that has a first area centroid that is located a first distance from a center of the semiconductor chip, and further includes a second bond pad portion positioned above the first upper surface and having a second upper surface that extends above the first upper surface, the second portion corresponding to a second surface area that is defined by at least a part of a second substantially regular geometric shape when viewed from above that has a second area centroid that is located a second distance from the center that is greater than the first distance.

Abstract: A system for repairing pillar bumps includes a pillar bump repair device that is adapted to form a plurality of strain-relieving notches in a pillar bump that is positioned above a metallization system of a semiconductor chip. The system further includes a pillar bump support device that is adapted to substantially support the pillar bump while the pillar bump repair device is forming each of the plurality of strain-relieving notches.

Abstract: Generally, the subject matter disclosed herein relates to repairing anomalous stiff pillar bumps that may be detected above a metallization system of a semiconductor chip or wafer. One illustrative method disclosed herein includes, among other things, forming a pillar bump above a metallization system of a semiconductor chip, and forming a plurality of notches in the pillar bump, wherein the plurality of notches are adapted to adjust a flexibility of the pillar bump when the pillar bump is exposed to a lateral force.

Abstract: Generally, the subject matter herein relates to detecting the presence of weak BEOL sites in a metallization system. One disclosed method includes performing a lateral force test on a pillar bump formed above a metallization system of a semiconductor chip, which includes contacting the pillar bump with a test probe while moving the test probe at a substantially constant speed that is less than approximately 1 ?m/sec along a path that is oriented at a substantially non-zero angle relative to a plane of the metallization system. Furthermore, the test probe is moving substantially away from the metallization system so that a force imposed on the pillar bump by the test probe has an upward component that induces a tensile load on the metallization system. The disclosed method also includes determining a behavioral interaction between the pillar bump and the metallization system during the lateral force test.

Abstract: Generally, the subject matter disclosed herein relates to testing pillar bumps formed on a semiconductor chip so as to detect the presence of anomalous stiff pillar bumps. One illustrative method disclosed herein includes positioning a test probe adjacent to a side of a pillar bump formed above a metallization system of a semiconductor chip, and performing a lateral force test on the pillar bump by contacting the side of the pillar bump with the test probe while moving the test probe at a substantially constant speed that is less than approximately 1 ?m/sec.

Abstract: A method for forming an interconnect structure includes forming a recess in a dielectric layer of a substrate, forming a first transition metal layer in the recess on corner portions of the recess, and forming a second transition metal layer in the recess over the first transition metal layer to line the recess. The method further includes filling the recess with a fill layer and annealing the substrate so that the first transition metal layer and the second transition metal layer form an alloy portion proximate the corner portions during the annealing, the alloy portion having a reduced wettability for a material of the fill layer than the second transition metal. Additionally, the method includes polishing the substrate to remove portions of the fill layer extending above the recess.

Abstract: The present disclosure is generally directed to multi-layer barrier layer stacks for interconnect structures that may be used to reduce mechanical stress levels between the interconnect structure and a dielectric material layer in which the interconnect structure is formed. One illustrative method disclosed herein includes forming a recess in a dielectric layer of a substrate and forming an adhesion barrier layer including an alloy of tantalum and at least one transition metal other than tantalum to line the recess, wherein forming the adhesion barrier layer includes creating a first stress level across a first interface between the adhesion barrier layer and the dielectric layer. The method also includes forming a stress-reducing barrier layer including tantalum over the adhesion barrier layer, wherein the stress-reducing barrier layer reduces the first stress level to a second stress level less than the first stress level, and filling the recess with a fill layer.

Abstract: A method for forming an interconnect structure includes forming a recess in a dielectric layer of a substrate. An adhesion barrier layer is formed to line the recess. A first stress level is present across a first interface between the adhesion barrier layer and the dielectric layer. A stress-reducing barrier layer is formed over the adhesion barrier layer. The stress-reducing barrier layer reduces the first stress level to provide a second stress level, less than the first stress level, across a second interface between the adhesion barrier layer, the stress-reducing barrier layer, and the dielectric layer. The recess is filled with a fill layer.

Abstract: A method for forming an interconnect structure includes forming a recess in a dielectric layer of a substrate. An adhesion barrier layer is formed to line the recess. A first stress level is present across a first interface between the adhesion barrier layer and the dielectric layer. A stress-reducing barrier layer is formed over the adhesion barrier layer. The stress-reducing barrier layer reduces the first stress level to provide a second stress level, less than the first stress level, across a second interface between the adhesion barrier layer, the stress-reducing barrier layer, and the dielectric layer. The recess is filled with a fill layer.

Abstract: Generally, the subject matter disclosed herein relates to repairing anomalous stiff pillar bumps that may be detected above a metallization system of a semiconductor chip or wafer. One illustrative method disclosed herein includes, among other things, forming a pillar bump above a metallization system of a semiconductor chip, and forming a plurality of notches in the pillar bump, wherein the plurality of notches are adapted to adjust a flexibility of the pillar bump when the pillar bump is exposed to a lateral force.

Abstract: A method includes forming an adhesion barrier layer over a dielectric layer formed on a substrate. A first stress level is present across a first interface between the adhesion barrier layer and the dielectric layer. A stress-reducing barrier layer is formed over the adhesion barrier layer. The stress-reducing barrier layer reduces the first stress level to provide a second stress level, less than the first stress level, across a second interface between the adhesion barrier layer, the stress-reducing barrier layer, and the dielectric layer. A metal layer is formed over the stress-reducing barrier layer. The metal layer, adhesion barrier layer, and stress-reducing barrier layer define an interconnect metal stack. Recesses are defined in the interconnect metal stack to expose the dielectric layer. The recesses are filled with a dielectric material, wherein a portion of the interconnect metal stack disposed between adjacent recessed filled with dielectric material defines an interconnect structure.

Abstract: In one example, a stress gauge for an integrated circuit product is disclosed that includes a layer of insulating material, a body positioned at least partially in the layer of insulating material, wherein the body is comprised of a material having a piezoelectric constant of at least about 0.1 pm/V, and a plurality of spaced apart conductive contacts, each of which is conductively coupled to the body.

Abstract: Generally, the subject matter disclosed herein relates to sophisticated semiconductor chips that may be less susceptible to the occurrence of white bumps during semiconductor chip packaging operations, such as flip-chip or 3D-chip assembly, and the like. One illustrative semiconductor chip disclosed herein includes, among other things, a bond pad and a metallization layer below the bond pad, wherein the metallization layer is made up of a bond pad area below the bond pad and a field area surrounding the bond pad area. Additionally, the semiconductor device also includes a plurality of device features in the metallization layer, wherein the plurality of device features has a first feature density in the bond pad area and a second feature density in the field area that is less than the first feature density.

Abstract: Generally, the subject matter disclosed herein relates to sophisticated semiconductor chips that may be less susceptible to the occurrence of white bumps during semiconductor chip packaging operations, such as flip-chip or 3D-chip assembly, and the like. One illustrative semiconductor chip disclosed herein includes, among other things, a bond pad and a metallization layer below the bond pad, wherein the metallization layer is made up of a bond pad area below the bond pad and a field area surrounding the bond pad area. Additionally, the semiconductor device also includes a plurality of device features in the metallization layer, wherein the plurality of device features has a first feature density in the bond pad area and a second feature density in the field area that is less than the first feature density.

Abstract: Generally, the subject matter disclosed herein relates to sophisticated semiconductor chips that may be less susceptible to the occurrence of white bumps during semiconductor chip packaging operations, such as flip-chip or 3D-chip assembly, and the like. One illustrative semiconductor chip disclosed herein includes at least one integrated circuit device and a bond pad that is electrically connected to the at least one integrated circuit device. Furthermore, the bond pad has an irregular overall configuration when viewed from above that corresponds to a first area portion that is defined by a first substantially regular geometric shape when viewed from above and a second area portion adjacent to the first area portion. Additionally, the second area portion is located at a greater distance from a centerline of the semiconductor chip than any part of the first area portion when viewed from above, and the bond pad is electrically connected to the at least one integrated circuit device.