Abstract: A method for manufacturing integrated circuits; particularly, a method for fabricating a copper interconnect system and a copper interconnect system, having a layer of CrO, fabricated by the method.

Abstract: A method for manufacturing integrated circuits; particularly, a method for fabricating a copper interconnect system and a copper interconnect system, having a layer of CrO, fabricated by the method.

Abstract: A method for accurately and objectively evaluating stress migration effects on long term reliability of integrated circuits. A sample containing a conductive runner is fabricated according to a given fabrication process. The fabricated sample undergoes a heating step at a first temperature for a first time period to induce material interactions at an accelerated rate, followed by cooling the sample to a second temperature and maintaining the second temperature for a time of sufficient duration such that relaxation occurs. Then the sample undergoes a heating process at a third temperature for a time sufficient to nucleate a predetermined number of voids, followed by heating the sample runner at a fourth temperature, less than than the third temperature, to propagate the voids such that a maximum void size is determined. Void distribution is preferably monitored by optical and scanning electron microscopy.

Abstract: The method of forming runners having superior stress migration characteristics is disclosed. A blanket layer of conductive material is deposited over a dielectric. A blanket layer is subjected to a blanket-etch back procedure, thereby reducing its thickness by approximately half. The remaining layer is then patterned to form runners. Resulting runners have a superior grain structure and greater resistance to electromigration and stress migration.

Abstract: Stress induced grain boundary movement in aluminum lines used as connections in integrated circuits is substantially avoided by doping the aluminum with iron. Through this expedient not only is grain boundary movement avoided but electromigration problems are also decreased.

Abstract: Stress induced grain boundary movement in aluminum lines used as connections in integrated circuits is substantially avoided by doping the aluminum with iron. Through this expedient not only is grain boundary movemenmt avoided but electromigration problems are also decreased.

Abstract: A sol-gel process is utilized for producing silicon oxide glasses useful in the manufacture of devices such as semiconductor devices. These glasses are easily deposited by techniques such as spinning. Not only is the glass easily applied, but also has advantageous electrical, etching, and mechanical properties. Thus, these glasses are useful in applications such as passivating layers for integrated circuit devices and as intermediary layers in trilevel lithography for the production of such devices.