Abstract: A new relatively high-k gate dielectric gate material comprising calcium oxide will reduce leakage from the silicon substrate to the polysilicon gate, prevent boron penetration in p-channel devices, and reduce electron trapping in the dielectric. The surface of a silicon wafer is saturated with hydroxyl groups. A calcium halide, preferably calcium bromide, is heated to a temperature sufficient to achieve atomic layer deposition, and is transported to the silicon wafer. The calcium halide reacts with the hydroxyl groups. Water is added to carry away the resultant hydrogen halide. Gaseous calcium and water are then added to form a calcium oxide gate dielectric, until the desired thickness has been achieved. In an alternative embodiment of the method, the calcium halide is transported to the silicon wafer to react with the hydroxyl groups, followed by transport of gaseous water to the silicon wafer. These two steps are repeated until the desired thickness has been achieved.

Abstract: A method of forming a reticle is provided. In general, a metal containing material is vaporized through simple vaporization. The metal containing material is condensed on a substrate to form a metal containing layer on the substrate. A patterned photoresist layer is formed over the metal containing layer, defining exposed metal containing layer regions and covered metal containing layer regions. The metal containing layer in the exposed metal containing layer regions is removed from the substrate, while the metal containing layer in the covered metal containing layer regions remains on the substrate to form a metal containing mask. The substrate is plasma etched. The remaining metal containing layer is removed from the substrate.

Abstract: A method of chemically altering a silicon surface and associated dielectric materials are disclosed.

Abstract: The invention provides a process for forming a low k fluorine and carbon-containing silicon oxide dielectric material by reacting with an oxidizing agent one or more silanes containing one or more organofluoro silanes having the formula SiR1R2R3R4, where: (a) R1 is selected from H, a 3 to 10 carbon alkyl, and an alkoxy; (b) R2 contains at least one C atom bonded to at least one F atom, and no aliphatic C—H bonds; and (c) R3 and R4 are selected from H, alkyl, alkoxy, a moiety containing at least one C atom bonded to at least one F atom, and ((L)Si(R5)(R6))n(R7); where n ranges from 1 to 10; L is O or CFR8; each n R5 and R6 is selected from H, alkyl, alkoxy, and a moiety containing at least one C atom bonded to at least one F atom; R7 is selected from H, alkyl, alkoxy, and a moiety containing at least one C atom bonded to at least one F atom; and each R8 is selected from H, alkyl, alkoxy, and a moiety containing at least one C atom bonded to at least one F atom.

Abstract: A process is provided for forming a low k fluorine and carbon-containing silicon oxide dielectric material by reacting with an oxidizing agent one or more silanes including one or more organofluoro silanes characterized by the absence of aliphatic C—H bonds. In one embodiment, the process is carried out using a mild oxidizing agent. Also provided is a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material for use in an integrated circuit structure containing silicon atoms bonded to oxygen atoms, silicon atoms bonded to carbon atoms, and carbon atoms bonded to fluorine atoms, where the dielectric material is characterized by the absence of aliphatic C—H bonds and where the dielectric material has a ratio of carbon atoms to silicon atoms of C:Si greater than about 1:3.

Abstract: A method of chemically altering a silicon surface and associated dielectric materials are disclosed.

Abstract: A process is provided for forming a low k fluorine and carbon-containing silicon oxide dielectric material by reacting with an oxidizing agent one or more silanes including one or more organofluoro silanes characterized by the absence of aliphatic C—H bonds. In one embodiment, the process is carried out using a mild oxidizing agent. Also provided is a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material for use in an integrated circuit structure containing silicon atoms bonded to oxygen atoms, silicon atoms bonded to carbon atoms, and carbon atoms bonded to fluorine atoms, where the dielectric material is characterized by the absence of aliphatic C—H bonds and where the dielectric material has a ratio of carbon atoms to silicon atoms of C:Si greater than about 1:3.

Abstract: Embodiments of the invention include a capping layer of alloy material formed over a copper-containing layer, the alloy configured to prevent diffusion of copper through the capping layer. In another embodiment the alloy capping layer is self-aligned to the underlying conducting layer. Specific embodiments include capping layers formed of alloys of copper with materials including but not limited to calcium, strontium, barium, and other alkaline earth metals, as well as materials from other groups, for example, cadmium or selenium. The invention also includes methods for forming an alloy capping layer on a copper-containing conducting structure. One such method includes providing a substrate having formed thereon electrically conducting layer comprised of a copper-containing material and forming an alloy capping layer on the electrically conducting layer. In another method embodiment, forming the alloy capping layer includes forming a self-aligned capping layer over the conducting layer.

Abstract: In accordance with the invention a high-k gate dielectric is formed by the steps of first forming a silicon oxide layer over a silicon substrate and then exposing the silicon oxide to a flux of low energy plasma containing metal ions which, when inserted into silicon oxide, form a high-k dielectric material suitable for use as a high-k gate dielectric. In one embodiment, the silicon oxide is exposed to a first plasma containing a first species of metal ions and then to a plasma of another species of metal ions which, when inserted into the silicon oxide with the metal ions in the first plasma, further increase the dielectric constant of the silicon oxide.

Abstract: The invention provides a process for forming a low k fluorine and carbon-containing silicon oxide dielectric material by reacting with an oxidizing agent one or more silanes that include one or more organofluoro silanes selected from: (a) an organofluoro silane containing two silicon atoms linked by one oxygen atom; (b) an organofluoro silane containing two silicon atoms linked by one or more carbon atoms, where the one or more carbon atoms each are bonded to one or more fluorine atoms, or to one or more organofluoro moieties, or to a combination thereof; and (c) an organofluoro silane containing a silicon atom bonded to an oxygen atom. The invention also provides a process for forming a low k fluorine and carbon-containing silicon oxide dielectric material by reacting with an oxidizing agent one or more silanes that include one or more organofluoro silanes characterized by the presence of Si—O bonds.

Abstract: A process is provided for forming a low k fluorine and carbon-containing silicon oxide dielectric material by reacting with an oxidizing agent one or more silanes including one or more organofluoro silanes characterized by the absence of aliphatic C—H bonds. In one embodiment, the process is carried out using a mild oxidizing agent. Also provided is a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material for use in an integrated circuit structure containing silicon atoms bonded to oxygen atoms, silicon atoms bonded to carbon atoms, and carbon atoms bonded to fluorine atoms, where the dielectric material is characterized by the absence of aliphatic C—H bonds and where the dielectric material has a ratio of carbon atoms to silicon atoms of C:Si greater than about 1:3.

Abstract: The invention provides a process for forming a low k fluorine and carbon-containing silicon oxide dielectric material by reacting with an oxidizing agent one or more silanes containing one or more organofluoro silanes having the formula SiR1R2R3R4, where: (a) R1 is selected from H, a 3 to 10 carbon alkyl, and an alkoxy; (b) R2 contains at least one C atom bonded to at least one F atom, and no aliphatic C-H bonds; and (c) R3 and R4 are selected from H, alkyl, alkoxy, a moiety containing at least one C atom bonded to at least one F atom, and ((L)Si(R5)(R6))n(R7); where n ranges from 1 to 10; L is O or CFR8; each n R5 and R6 is selected from H, alkyl, alkoxy, and a moiety containing at least one C atom bonded to at least one F atom; R7 is selected from H, alkyl, alkoxy, and a moiety containing at least one C atom bonded to at least one F atom; and each R8 is selected from H, alkyl, alkoxy, and a moiety containing at least one C atom bonded to at least one F atom.

Abstract: A low temperature process is described for forming a low dielectric constant (k) fluorine and carbon-containing silicon oxide dielectric material for integrated circuit structures. A reactor has a semiconductor substrate mounted on a substrate support which is maintained at a low temperature not exceeding about 25° C., preferably not exceeding about 10° C., and most preferably not exceeding about 0° C. A low k fluorine and carbon-containing silicon oxide dielectric material is formed on the surface of the substrate by reacting together a vaporous source of a mild oxidizing agent, such as a vaporized hydrogen peroxide, and a vaporous substituted silane having the formula (CFmHn)—Si—(R)xHy wherein m is 1-3; n is 3-m; R is an alkyl selected from the group consisting of ethyl (—C2H5), methyl (—CH3), and mixtures thereof; x is 1-3; and y is 3-x.

Abstract: A low dielectric constant multiple carbon-containing silicon oxide dielectric material for an integrated circuit structure is described which comprises a silicon oxide material including silicon atoms which are each bonded to a multiple carbon-containing group consisting of carbon atoms and primary hydrogens. Preferably such multiple carbon-containing groups have the general formula —(C)y(CH3)z, where y is an integer from 1 to 4 for a branched alkyl group and from 3 to 5 for a cyclic alkyl group, and z is 2y+1 for a branched alkyl group and 2y−1 for a cyclic alkyl group.

Abstract: The invention relates to the cutting tools for machining of holes.The claimed drill has helical chip flutes wherein the leading (5) and flank (8) surfaces and their mating surface (10) represent, each, a part of the circular helical surface.