Abstract: A multiple current sensor device or a multiple current shunt device includes at least two resistive sections comprising a first resistive section and a second resistive section, at least two connecting sections comprising a first connecting section and a second connecting section and a common connecting section. The first resistive section is electrically coupled in between the first connecting section and the common connecting section. The second resistive section is electrically coupled in between the second connecting section and the common connecting section. Using an embodiment may improve a trade-off between an efficient integration, a compact integration, a compact implementation and an accurate determination of at least one value indicative of at least one of multiple currents.

Abstract: An electrical circuit includes a first circuit part and a second circuit part. A first electrical potential is applicable to the first circuit part, wherein a second electrical potential is applicable to the second circuit part. The two circuit parts are galvanically isolated from each other by an insulator, wherein the insulator includes a conducting portion. This conducting portion can be safely sensed by an additional circuitry, to detect if a full or partial contact to the first electrical potential or the second electrical potential has occurred due to a voltage shift or a current flow on the conducting portion, which is itself insulated. This sensing circuitry can incorporate protection elements to clamp voltages and limit currents to prevent destruction of connected circuitries in case of a fail of the insulation.

Abstract: In one embodiment, a method of forming a current sensor device includes forming a device region comprising a magnetic sensor within and/or over a semiconductor substrate. The device region is formed adjacent a front side of the semiconductor substrate. The back side of the semiconductor substrate is attached over an insulating substrate, where the back side is opposite the front side. Sidewalls of the semiconductor substrate are exposed by dicing the semiconductor substrate from the front side without completely dicing the insulating substrate. An isolation liner is formed over all of the exposed sidewalls of the semiconductor substrate. The isolation liner and the insulating substrate include a different material. The method further includes separating the insulating substrate to form diced chips, removing at least a portion of the isolation liner from over a top surface of the device region, and forming contacts over the top surface of the device region.

Abstract: In one embodiment, a semiconductor device includes a glass substrate, a semiconductor substrate disposed on the glass substrate, and a magnetic sensor disposed within and/or over the semiconductor substrate.

Abstract: An electronic array may include a first electronic component which has a first operation voltage, a second electronic component which has a second operation voltage, wherein the second operation voltage is different from the first operation voltage and wherein the first electronic component and the second electronic component are arranged over each other, an isolation layer between the first electronic component and the second electronic component, wherein the isolation layer electrically isolates the first electronic component from the second electronic component, at least one connection layer formed at least partially between the isolation layer and the first electronic component or between the isolation layer and the second electronic component, wherein the connection layer includes a first portion and a second portion, wherein the first portion and the second portion each extend from the corresponding electronic component to the isolation layer, wherein the first portion includes an electrically isolating

Abstract: An electronic array may include a first electronic component which has a first operation voltage, a second electronic component which has a second operation voltage, wherein the second operation voltage is different from the first operation voltage and wherein the first electronic component and the second electronic component are arranged over each other, an isolation layer between the first electronic component and the second electronic component, wherein the isolation layer electrically isolates the first electronic component from the second electronic component, at least one connection layer formed at least partially between the isolation layer and the first electronic component or between the isolation layer and the second electronic component, wherein the connection layer includes a first portion and a second portion, wherein the first portion and the second portion each extend from the corresponding electronic component to the isolation layer, wherein the first portion includes an electrically isolating

Abstract: In one embodiment, a semiconductor package includes an isolating container having a recess, which forms an inner membrane portion and an outer rim portion. The rim portion is thicker than the membrane portion. The package includes a semiconductor chip disposed in the recess and a backplane disposed under the membrane portion of the isolating container.

Abstract: A current sensor device for sensing a measuring current includes a semiconductor chip having a magnetic field sensitive element. The current sensor device further includes an encapsulant embedding the semiconductor chip. A conductor configured to carry the measuring current is electrically insulated from the magnetic field sensitive element. A redistribution structure includes a first metal layer having a first structured portion which forms part of the conductor.

Abstract: A semiconductor chip package and a method to manufacture a semiconductor chip package are disclosed. An embodiment of the present invention comprises a substrate and a semiconductor chip disposed on the substrate and laterally surrounded by a packaging material. The package further comprises a current rail adjacent the semiconductor chip, the current rail isolated from the semiconductor chip by an isolation layer, a first external pad, and a via contact contacting the current rail with the first external pad.

Abstract: A current sensor device includes a casing having a cavity and a conductor fixedly mounted to the casing. A semiconductor chip configured to sense a magnetic field is arranged in the cavity. An electrically insulating medium is configured to at least partially fill the cavity of the casing.

Abstract: An electrical circuit includes a first circuit part and a second circuit part. A first electrical potential is applicable to the first circuit part, wherein a second electrical potential is applicable to the second circuit part. The two circuit parts are galvanically isolated from each other by an insulator, wherein the insulator includes a conducting portion. This conducting portion can be safely sensed by an additional circuitry, to detect if a full or partial contact to the first electrical potential or the second electrical potential has occurred due to a voltage shift or a current flow on the conducting portion, which is itself insulated. This sensing circuitry can incorporate protection elements to clamp voltages and limit currents to prevent destruction of connected circuitries in case of a fail of the insulation.

Abstract: In accordance with an embodiment of the present invention, a semiconductor package includes a current rail comprising a first contact area and a second contact area, a first groove and a second groove, and a magnetic field generating portion. Along a current flow direction, the first groove is disposed between the first contact area and the magnetic field generating portion and the second groove is disposed between the magnetic field generating portion and the second contact area. The thickness of the current rail at the first groove is smaller than the thickness of the current rail at the first contact area.

Abstract: A multiple current sensor device or a multiple current shunt device includes at least two resistive sections comprising a first resistive section and a second resistive section, at least two connecting sections comprising a first connecting section and a second connecting section and a common connecting section. The first resistive section is electrically coupled in between the first connecting section and the common connecting section. The second resistive section is electrically coupled in between the second connecting section and the common connecting section. Using an embodiment may improve a trade-off between an efficient integration, a compact integration, a compact implementation and an accurate determination of at least one value indicative of at least one of multiple currents.

Abstract: In one embodiment, a semiconductor device includes a glass substrate, a semiconductor substrate disposed on the glass substrate, and a magnetic sensor disposed within and/or over the semiconductor substrate.

Abstract: In accordance with an embodiment of the present invention, a semiconductor package includes a current rail comprising a first contact area and a second contact area, a first groove and a second groove, and a magnetic field generating portion. Along a current flow direction, the first groove is disposed between the first contact area and the magnetic field generating portion and the second groove is disposed between the magnetic field generating portion and the second contact area. The thickness of the current rail at the first groove is smaller than the thickness of the current rail at the first contact area.

Abstract: In one embodiment, a semiconductor device includes a glass substrate, a semiconductor substrate disposed on the glass substrate, and a magnetic sensor disposed within and/or over the semiconductor substrate.

Abstract: A semiconductor chip package and a method to manufacture a semiconductor chip package are disclosed. An embodiment of the present invention comprises a substrate and a semiconductor chip disposed on the substrate and laterally surrounded by a packaging material. The package further comprises a current rail adjacent the semiconductor chip, the current rail isolated from the semiconductor chip by an isolation layer, a first external pad, and a via contact contacting the current rail with the first external pad.

Abstract: In one embodiment, a semiconductor device includes a glass substrate, a semiconductor substrate disposed on the glass substrate, and a magnetic sensor disposed within and/or over the semiconductor substrate.

Abstract: Embodiments relate to magnetic field current sensors. In an embodiment, a method of forming a conductor clip for a magnetic field current sensor comprises forming a footprint portion; forming first and second contact portions; and forming first and second pillar portions coupling the first and second contact portions, respectively, to the footprint portion, the first and second pillar portions having a constant height and being at approximate right angles to the first and second contact portions and the footprint portion.

Abstract: In one embodiment, a semiconductor package includes an isolating container having a recess, which forms an inner membrane portion and an outer rim portion. The rim portion is thicker than the membrane portion. The package includes a semiconductor chip disposed in the recess and a backplane disposed under the membrane portion of the isolating container.