MAGNETIC FIELD CURRENT SENSORS
Embodiments relate to magnetic field current sensors. In an embodiment, a method of forming a conductor clip for a magnetic field current sensor comprises forming a footprint portion; forming first and second contact portions; and forming first and second pillar portions coupling the first and second contact portions, respectively, to the footprint portion, the first and second pillar portions having a constant height and being at approximate right angles to the first and second contact portions and the footprint portion.
This application is a continuation of U.S. application Ser. No. 12/963,787, filed on Dec. 9, 2010, and entitled “MAGNETIC FIELD CURRENT SENSORS,” the entirety of which is incorporated herein by reference.
TECHNICAL FIELDThe invention relates generally to integrated circuits and more particularly to integrated circuit magnetic current sensors.
BACKGROUNDDesired properties of galvanically isolated integrated circuit (IC) magnetic field current sensors include high magnetic sensitivity; high mechanical stability and reliability; low stress influence to Hall sensor elements near chip borders; high thermal uniformity and low thermal gradients; high isolation voltage; minimized electromigration issues; and low manufacturing costs. Conventional current sensors can include one or more features or be manufactured in ways that aim to address these desired properties.
For example, some current sensors use the leadframe as a current lead. Others also include a magnetic core. Such sensors, however, can be expensive to manufacture.
Other current sensors include additional layers, such as special magnetic layers on top of the silicon die or a thick metal layer formed on the isolation layer. These sensors are also expensive, and the former can be sensitive to disturbance fields and can suffer from drawbacks related to the positioning of the current leading wire outside of the IC.
Therefore, there is a need for a galvanically isolated IC magnetic field current sensor having desired properties while minimizing drawbacks.
SUMMARYIn an embodiment, a method of forming a conductor clip for a magnetic field current sensor comprises forming a footprint portion; forming first and second contact portions; and forming first and second pillar portions coupling the first and second contact portions, respectively, to the footprint portion, the first and second pillar portions having a constant height and being at approximate right angles to the first and second contact portions and the footprint portion.
In another embodiment, a magnetic field current sensor comprises a semiconductor die having at least one magnetic field sensor element; an inorganic insulating layer having at least one solderable metal plate on a first surface thereof; and a current conductor coupled to the semiconductor die via the insulating layer by a solder connection between the current conductor and the at least one solderable metal plate such that when a current is applied to the sensor less than about 10% flows through the solder connection.
In another embodiment, a method comprises forming a grid of grooves in a first surface of a copper wafer; coupling the first surface of the copper wafer to a first surface of a semiconductor wafer; forming a grid of grooves in a second surface of the copper wafer, the grid of grooves formed in the first surface aligning with the grid of grooves formed in the second surface such that a portion of the copper wafer can be removed to leave a plurality of copper blocks coupled to the first surface of the semiconductor wafer; and singulate the semiconductor wafer such that each of the plurality of copper blocks is coupled to a semiconductor die.
The invention may be more completely understood in consideration of the following detailed description of various embodiments of the invention in connection with the accompanying drawings, in which:
While the invention is amenable to various modifications and alternative forms, specifics thereof have been shown by way of example in the drawings and will be described in detail. It should be understood, however, that the intention is not to limit the invention to the particular embodiments described. On the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the appended claims.
DETAILED DESCRIPTIONThe invention relates to an IC magnetic field current sensor having a three-dimensional current conductor. In embodiments, three-dimensional conductors can avoid long lateral dimensions that increase internal resistance and can also be positioned closer to the die in order to maximize the magnetic field at sensor element locations. Additionally, a three-dimensional current conductor fabricated from a single piece can reduce or eliminate electromigration issues. Embodiments can also keep the resistance low, such as on the order of about 100μΩ in one embodiment, and provide good galvanic isolation, such as up to about 10 kV in embodiments. Embodiments can also include current contacts and low-voltage sensor pins arranged on different levels. Embodiments can thereby provide significant voltage isolation at relatively low cost.
In an embodiment, footprint portion 102 comprises one or more notches 112. Notch 112 can be configured in size, shape and/or position to shape and amplify current flow through clip 100 and near magnetic field sensors. In the embodiment of
Footprint portion 102 is generally sized and shaped such that it is large enough to make good mechanical contact with a die on which it is mounted and also to support clip 100 during manufacturing without causing it to tip or fall, while remaining smaller than the die as clip 100 should be placed a sufficient lateral distance from the sawing edge of the die in order to achieve a desired or required voltage isolation. In embodiments, the voltage isolation is in a range of about 1 kV to about 10 kV, with footprint portion 102 separated from the sawing edge of the die by about 0.1 mm to about 1 mm. As depicted in
First and second pillar portions 104 and 108 couple footprint portion 102 to first and second contacts 106 and 110, respectively and are at approximately right angles to footprint portion 102 and contacts 106 and 110. In embodiments, first and second pillar portions 104 and 108 are of a monotonic height such that they separate the first and second contacts 106 110, respectively, from the footprint portion by a vertical distance and are long enough to provide a sufficient distance between contacts 106 and 110 and the sawing edge of the die because one or both of contacts 106 and 110 can overlap with the sawing edge without unnecessarily increasing the current path length in clip 100. With respect to the monotonic nature of the first and second pillar portions 104 and 108, clip 100 extends from contacts 106 and 110 to footprint portion 102 only in a single direction, without reversing direction or bending up and then down. In other words, if contacts 106 and 110 are at a first height and footprint portion 102 is at a second height, then a function which describes the height versus lateral dimensions is monotonic in a mathematical sense, meaning that its derivative does not change sign.
In the embodiment of
Contacts 106 and 110 are identical in an embodiment. Contacts 106 and 100 should be large enough to offer a sufficient surface and, desirably, be larger than the die. Thus, as depicted in
As previously mentioned, the thickness of clip 100 in
In general, clip 100 comprises a material that is a good electrical and thermal conductor and nonmagnetic, such as having ferromagnetic impurities that are less than 0.1%. It is helpful for the material to be soft enough to facilitate punching, forming, pressing, trimming and other steps during manufacturing. In one embodiment, clip 100 comprises copper. In another embodiment, clip 100 comprises aluminum.
In
In
Magnetic field sensors 214a, 214b and 214c are positioned on die 202 at locations which the current through clip 100 experiences extreme values, for example along the boundary of clip 100. If clip 100 comprises one or more notches 112, an optimum position for a magnetic field sensor 214a, 214b and/or 214c is adjacent an end of notch 112, as notch 112 causes strongly inhomogeneous current density and consequently the magnetic field is more effectively localized near an end thereof. More information regarding notch 112 and this effect can be found in co-owned U.S. patent application Ser. No. 12/711,471, which is incorporated herein by reference in its entirety.
If the distance between the active volume of magnetic field sensors 214a, 214b and 214c and the opposing surface of clip 100 is small, such as about 5 μm to about 50 μm in embodiments, half of the active volume should overlap clip 100 in an embodiment. In another embodiment comprising notch 112, the active volume can be positioned predominantly or entirely adjacent notch 112, such that only a small part or no part of magnetic field sensor 214a, 214b and/or 214c overlaps the conductive material of clip 100.
To remove undesirable background magnetic field effects on magnetic field sensors 214a, 214b and 214c, higher order differential field measurements can be used, such as are described in co-owned U.S. patent application Ser. No. 12/630,596, which is incorporated herein by reference in its entirety. In essence, magnetic field sensors 214a, 214b and 214c need not each be located at magnetic field extremes, though it can be advantageous for each to experience a strong magnetic field. This is not always possible, however, absent complicated chip design and increased ohmic resistance of clip 100. Therefore, another viable option is to position less than all magnetic field sensors 214a, 214b and 214c at points of maximum field from current through clip 100. Such a configuration is the one depicted in
For compatibility with higher current ranges, clip 100 omits notch 112 which increases the resistance of clip 100, as depicted in
Total signal=(d−a)−3*(c−b)
where a refers to the signal of magnetic field sensor 214a, b refers to the signal of magnetic field sensor 214b, etc., and the magnetic field sensors 214a, 214b, 214c and 214d are equidistantly spaced.
If magnetic field sensors 214a, 214b, 214c and 214d are not equidistantly spaced, each signal is then multiplied by an appropriate scaling factor, such as is described in previously mentioned U.S. patent application Ser. No. 12/630,596, which has been incorporated herein by reference.
As can be seen, at least one advantage relates to the versatility of embodiments of clip 100 and the package concept. Small changes in the thickness, width, notch geometry and/or other characteristics of clip 100 can adjust or customize the resistance of clip 100. Further, as illustrated by
If four magnetic field sensors are used, such as in the embodiment of
Another embodiment of clip 100 is depicted in
Because clip 100 is 400 μm thick in this embodiment, it is not necessary to keep the isolation layers less than 50 μm thick. Therefore, it is possible to attach clip 100 to the rear side of the die if the die is thin, such as about 60 μm in one embodiment. Refer, for example to
In the embodiment of
Advantages of arranging two magnetic field sensors closer together than the width of clip 100, as in
At 1504, a die is provided. The die can have a thickness of about 60 μm in an embodiment, though this can vary in other embodiments.
At 1506, an insulation layer is provided between the die paddle and the bottom side of the die. In an embodiment, the insulation layer is applied to the die surface during a semiconductor manufacturing process on wafer level, before singulation of the dies. The insulation layer can also comprise a ceramic, porcelain, or glass platelet or a KAPTON foil in embodiments. The insulation layer is larger than the die paddle, or even larger than the die, in an embodiment to ensure voltage isolation between the die paddle and the sawing edge of the die.
At 1508, the die is coupled to the die paddle with an interstitial isolation layer. In embodiments, the coupling is by adhesive, soldering or some other suitable means. The top side of the die includes magnetic field sensors and bond pads and is spaced further from the die paddle than from the bottom side of the die.
At 1510, the bond pads are coupled to the pins of the leadframe. In an embodiment, the coupling is by bond wires.
At 1512, the die and a portion of the sensor pins are enclosed with mold compound, such as by transfer molding.
At 1514, the pins of the sensor excluding the ground pin are cut from the leadframe, and at least one of two contacts for the current clip is cut from the leadframe in an embodiment. End-of-line testing and calibration of the current sensor are performed, and remaining connections between the sensor package and the leadframe are cut.
Various customizations are also possible according to embodiments. For example, the contacts can be elongated if it is desired to vary the distance between the solder joints and the magnetic field sensors. It can be necessary to do this if the solder joints need to be plated with nickel, which is magnetic and can therefore affect the magnetic fields and thus the calibration of the current sensor. The magnetism of the nickel can be reduced, for example, by alloying with phosphorous, or the nickel-plated surfaces can be laterally shifted until they are sufficiently distal with respect to the magnetic field sensor element and to the regions of increased magnetic field.
There are also many possibilities for configuring the current contacts and sensor pins. In
In
Contacts 106 and 110 and sensor pins 206 can be accessible on the same surface of package 200 or on different surfaces, as depicted in
In other embodiments, current contacts 106, 110 can project from mold body 212, as depicted in
In embodiments, pillar portions 104 and 108 need not be configured at ninety degrees with respect to the surface of die 202. Angles closer to 90 degrees, however, can be more easily manufactured, such as by pressing sheet metal. Another advantage of pillar portions 104, 108 being perpendicular to the surface of die 202 is that pillar portions 104, 108 are then shorter, which can minimize electrical and thermal resistance between footprint portion 102 and contact portions 106 and 110. Yet another advantage is smaller lateral size of the spacing between contact portions 106 and 110, which can save space, increase the number of devices per strip during production and consequently reduce the cost of manufacturing.
Referring to
To increase the voltage isolation between clip 100 and bond wires 208 and bond pads, a spray coating isolation, such as benzocyclobutane (BCB), maybe applied after bond wires 208 are installed between the bond pads and leads. Additionally or alternatively, the surfaces of clip 100 that face bond wire 208 and the bond pads can be coated with a dielectric isolation film.
In
Referring to
In another embodiment, shoulder 220 is omitted such that mold body 212 fits within the hole in the PCB 222, as in
Another embodiment is depicted in
In general, therefore, embodiments of current sensors benefit from good isolation between current contacts and contact pins. Even if good isolation is achieved by the mold compound and isolating layer with high dielectric strength, clearance distance between the contacts and pins as well as creepage can still present challenges. Standardization rules generally call for certain dimensions, which in applications at more than about 5 kV can result in large packages. In embodiments, however, if the sensor package can offer two planes, one for the current contacts and another for the pins of the low-voltage leads, with some form of sealing therebetween, the sensor package can be very small with creepage and clearance requirements met after the package is installed in the module, such as a PCB in embodiments. In embodiments, the package can also comprise some means, such as tape or a clip, for mechanically coupling the package to the PCB during the assembly process.
Referring to
An option for reducing or eliminating the discontinuities is to reduce the width of bus bar 240, 242 and clip 100 at a constant angle, one embodiment of which is depicted in
In operation, it is important that clip 100 remains securely coupled to die 202. To accomplish secure coupling, embodiments can use adhesive, soldering or some other suitable technique. Regarding soldering, diffusion soldering between footprint portion 102 and a metal layer on top of the surface of die 202 can be used. This metal layer can be isolated from the rest of die 202 by a dielectric isolation layer, comprising polyimide, silicon dioxide or silicon nitride, in embodiments, and, in general, serves merely a mechanical purpose related to adhesion with no electrical function.
In embodiments, however, this on-chip metal layer can be used for alignment of clip 100 with respect to die 202. The on-chip metal layer is typically aligned very accurately with respect to die 202 because of the high accuracy of the semiconductor manufacturing processes. If clip 100 is soldered to this layer, the solder can pull a slightly eccentrically mounted clip 100 into the center of the on-chip metal layer through the action of its surface tension.
Because the area of footprint portion 102 is small, challenges can be presented during assembly. For example, the adhesive force of solder paste or adhesive applied to the bottom of clip 100 and/or the top of die 202 can be too small to hold clip 100 in place before the solder or adhesive has developed full strength, such as after curing. Therefore, it can be advantageous in embodiments to not attach individual clips 100 to individual dies 202 but rather to have several clips 100 arranged in a second leadframe. Dies 202 are attached to a first leadframe according to conventional semiconductor manufacturing techniques, and the second leadframe is then placed on top of the first leadframe.
At 3502, adhesive is applied to the die paddles of the first leadframe.
At 3504, the semiconductor dies are placed on the die paddles. The adhesive is cured.
At 3506, the sensor pins are coupled to the bond areas on the dies by bond wires.
At 3508, adhesive is applied to the dies and/or footprint portions of the clips.
At 3510, a second leadframe having the clips is placed on the first leadframe having the dies. In an embodiment, this is carried out such that the footprint portions of the clips are placed at or near the magnetic field sensor elements on the top surfaces of the dies. In another embodiment, the first and second leadframes can also be connected via secondary means, for example along their circumferential frames. This can be helpful or necessary if the cumulative area of the footprints of all of the devices per strip is too small to take up the mechanical load during the handling process. These additional means can comprise mechanical fixtures such as rivets or nuts; chemical joints such as gluing or soldering; or physical joints such as spot welding, among others. The adhesive between the dies and clips is cured.
At 3512, the mold bodies are molded.
At 3514, the clips of the second leadframe are stamped out, either completely or only on the current input or output side. The sensor pins except for the ground pins of the first leadframe are also stamped out. If an isolation test in which a voltage of several kVs is applied between the current rail and the sensor pins is desired or required, all low voltage pins of the sensor can be stamped out such that no connection to the primary conductor exists. Step 3514 can be omitted or carried out only partly if the devices are large, with full stamping carried out at 3518.
At 3516, end-of-line testing and calibration of the sensor devices are carried out.
At 3518, the remaining sensor pins are stamped out to singulate the sensor devices.
If the contact portions of the clips are large when compared to the size of the footprint portion, in particular if the footprint portions are mechanically fragile because they include one or more notches to shape the current path, it can be helpful or necessary to add non-conducting support structures to the clips. This can be, for example, an adhesive foil attached to the contacts portions, or those parts of the footprint portions not in contact with the isolation layer after clip coupling can be molded in a plastic encapsulation in embodiments.
In other embodiments, the clip comprises multiple layers, such as a contact layer and a footprint layer. Each layer can be stamped out separately from sheet metal and coupled by soldering or welding, such as UV welding, in embodiments. In another embodiment, the contact layer is stamped from sheet metal while the footprint portion is galvanically grown on top of the contact layer, such as via electrolytic deposition. This avoids other materials, such as solder, and can establish a full surface contact between the layers, avoiding spot welding. Advantages include a smaller separation distance, even less than the layer thickness, between the contacts, and the possibility of having different thicknesses of the two layers. Layer thickness is important for voltage isolation, because the thickness of the footprint portion is identical to the vertical distance between the bottom surface of the contacts and the die surface. Also, the current density is related to the ratio of the thicknesses of the contacts and the bus bar. If the bus bar is thick and the contacts are thin, the current is inclined to flow vertically through the central parts of the contacts, leading to strong peaks in the current density distribution near the center of the solder area, as depicted in
If bus bar 602 is thinner than the contact layer, the current is included to flow laterally through the contact layer, which reduces the excessive current densities in solder layer 3602 between bus bar 602 and the contact layer because the current is spread more evenly over solder layer 3602. As depicted in
In embodiments, contact portions 106 and 100 can overlap bond pads on die 202, or not. The length, height and other characteristics of the bond loops can be adjusted in these various embodiments for sufficient vertical distance and isolation. The thickness of the contact layer can be less than or greater than the thickness of the footprint layer in order to pull the peak current density in solder layer 602 out of the vertical center plane, in an embodiment.
Another embodiment is depicted in
Clip 100 can be formed from a contact layer, with each contact portion 106 and 110 separately stamped. Contact portions 106, 110 can then be mounted in a mold cavity, where reinforcement mold 3802 is cast to fill the gap between the portions 106 and 110. The footprint layer, comprising footprint portion 102, can then be electrolytically grown on top. Die 202 can then be mounted, with isolation layer 204 in between. In an embodiment, this manufacturing is carried out with the contact layer fixed in a frame. The frame can then be placed into another mold tool to cover die 202 with mold body 212, which is shown in
In embodiments, such a device can be suitable for currents in a range of about 5 Å to about 500 A or more, such as about 1000 A, depending upon the configuration of notch 212 in footprint portion 102, the thicknesses and configurations of the contact and footprint layers and the size of the contact surfaces. Voltage isolation can be up to about 10 kV in embodiments, with the creepage distance designed by the overlapping parts of the PCB into which package 200 is inserted.
In another embodiment of a coreless magnetic current sensor depicted in
At 4002, a grid of grooves is formed in a first side of the copper wafer. In embodiments, the grooves are formed by etching or sawing. For a 400 μm-thick wafer, the grooves can be about 100 μm deep.
At 4004, the first side of the copper wafer, now grooved, is coupled to a silicon wafer. In embodiments, the copper wafer is coupled to the silicon wafer by soldering, gluing or some other suitable means. The silicon wafer can include an isolation layer, onto which the copper block is coupled, in embodiments. In one embodiment, the isolation layer comprises silicon oxide and is about 12 μm thick.
At 4006, a grid of grooves is formed in the second side of the copper wafer. In an embodiment in which the copper wafer is 400 μm thick, the grooves are 300 μm deep and align with the first grid of grooves formed in the first side of the copper wafer such that a frame structure can be released and discarded, leaving behind an array of spaced-apart copper blocks on the surface of the silicon wafer. In an embodiment, each copper block is about 1.9 mm by about 1.9 mm by about 0.4 mm, though these dimensions can vary in other embodiments.
At 4008, grooves are optionally formed in the remaining copper blocks. Such grooves, about 300 μm deep and about 100 μm wide in an embodiment but having other depths in other embodiments, can be helpful to increase current density in low current applications. The grooves are formed by a sawing blade in an embodiment.
In an embodiment, 4006 and 4008 can be combined, such as if there is no need to keep a lateral distance between copper block 3900 and the sawing edge of the die. This can be suitable for embodiments having low voltage isolation requirements.
At this point, the structure is as is depicted in
At 4010, bond pads 3906 (
The embodiment depicted in
At 4012, copper block 3900 can be coupled to a leadframe 3912, such as is depicted in
At 4014, a copper coating can be applied over leadframe 3912 and copper block 3900. In one embodiment, a copper coating about 50 μm thick is uniformly galvanized over leadframe 3912 and copper block 3900. The copper coating reduces the distance between block 3900 and the sawing edge of silicon die 3910 and bond pads 3906 by about 50 μm in each direction, while leadframe 3912 becomes about 100 μm thicker. The depth and width of groove 3902 are also reduced.
In another embodiment, copper block 3900 can comprise two distinct portions, if groove 3902 is carried through block 3902. A metal layer, such as aluminum or power copper, can be formed below and, if in contact with block 3902, also galvanized, including in between the portions of block 3900. In this embodiment, arbitrary thin layers can be grown and also patterned laterally as desired.
Advantages of embodiments and process 4000 include the ability to produce structures more accurately and cheaply than conventional solutions, in part because the whole silicon wafer can be used and the structures can be formed more accurately at the wafer level. In particular, precise position tolerances can be achieved.
Other variations are also possible in embodiments. For example, the copper blocks can be coupled to the front side, back side or both sides of the wafer. The top sides of the copper blocks can be prepared for soldering, though electromigration can then become a current limiter. Large contacts forming part of the leadframe can be coupled, such as by soldering, to top side of the copper block. This can be carried out during package assembly. If diffusion soldering is used, the solder junction can then tolerate higher current density, such as up to about 60 A. Large contacts can also be coupled by a conductive glue or other solder and coated at least partially to ensure good electrical contact with the copper block, such as in a galvanic bath. In embodiments, the coating is about 10 μm to about 50 μm thick and comprises a good conductor, such as copper.
As previously mentioned, copper block 3900 can be substituted for clip 100. Thus, embodiments for current sensing applications comprising copper block 3900 can also comprise at least one magnetic field sensor. Embodiments can also comprise amplifiers and signal conditioning circuitry. The magnetic field sensors can comprise planar Hall plates, which can be disposed near a straight or curved edge of the copper block and near the part of the copper block having the smallest cross-sectional area (and therefore highest current density).
Following 4008, the die can instead be coupled, such as by gluing, to a die paddle or a leadframe, with connections then made between leads and bond pads with bond wires and mold compound applied.
An example embodiment is depicted in
In
Referring to
The thickness of contacts 4500 can be similar to that of sensor leads 4402, which can reduce the price of leadframe 4408. In an embodiment, leadframe comprises copper with a very low, such as less than 0.1%, iron content. An advantage of copper block 3900, however, is that it can be made of high purity copper, which has a low resistivity, in order to reduce the dissipation and self-heating of the sensor.
As previously mentioned in various contexts and with respect to various embodiments discussed herein throughout, the distance between the conductor and the magnetic field sensor(s) is also important, as is the fact that this distance remain stable over the lifetime of the sensor. Conventional solutions often use thin conductor layers manufactured during semiconductor fabrication, which have well-defined positions and are generally stable over lifetime. Thin conductors, however, are current limiters. Other conventional solutions for higher current applications fix the conductor to the die using an adhesive, glue, mold compound or other material. While such configurations can handle higher currents, the fixing materials are less stable, susceptible to moisture, chemical reactions from long-term exposure to high temperatures and other factors that can alter the material thickness and thereby affect sensor accuracy.
Therefore, embodiments can utilize soldering techniques to couple the primary conductor and semiconductor die, for example in high current applications in which a massive conductor is used. In embodiments, solder is not used to carry current but establishes a mechanical connection between the conductor and the semiconductor die having the magnetic field sensor elements, with current flowing in the conductor. The relative position of the conductor with respect to the magnetic field sensor element(s) is therefore determined only by anorganic, highly stable materials such as semiconductors, metal, ceramic, glass, porcelain, solder and the like.
Referring to
After the individual semiconductor dies 4604 are singulated during manufacturing, the dies 4604 can each be soldered to a primary conductor 4608 at metal layer 4606. In the embodiment depicted in
Referring in particular to
Another embodiment is depicted in
In embodiments, insulating plate 4710 comprises ceramic, glass, porcelain, silicon or some other suitable material. Insulating plate 4710 can be larger than die 4704 and therefore can also provide more reliable voltage isolation. Additionally, plate 4710 need not be perfectly flat in embodiments, as plate 4710 can be profiled by etching or some other technique such that the perimeter area or a portion thereof is thicker or thinner than the center area. For example, in an embodiment in which die 4704 rests in the center of plate 4710, a thicker perimeter portion of plate 4710 can provide increased voltage isolation. In such an embodiment, metal layer 4708 should not extend to the thicker perimeter portion.
In one embodiment of
Metal plates or layers 4702, 4708 and 4712 are prepared to be solderable and, during manufacturing, the soldering of these layers 4702, 4708 and 4712 can be carried out in a single step or in multiple steps. For example, it can be desired in an embodiment to solder consecutively, using different solder processes at different temperatures. In embodiments, high-temperature soldering, such as diffusion soldering, can be used, which is advantageous because it can be thin and subsequently the package contacts can be readily solderable at a lower temperature with conductor 4714 remaining stable with respect to the position of die 4704.
In embodiments, conductor 4714 can comprise a unitary or plurality of components, for example a clip and leads. At the surface of die 4704, however, conductor 4714 comprises a single part.
Various embodiments of systems, devices and methods have been described herein. These embodiments are given only by way of example and are not intended to limit the scope of the invention. It should be appreciated, moreover, that the various features of the embodiments that have been described may be combined in various ways to produce numerous additional embodiments. Moreover, while various materials, dimensions, shapes, configurations and locations, etc. have been described for use with disclosed embodiments, others besides those disclosed may be utilized without exceeding the scope of the invention.
Persons of ordinary skill in the relevant arts will recognize that the invention may comprise fewer features than illustrated in any individual embodiment described above. The embodiments described herein are not meant to be an exhaustive presentation of the ways in which the various features of the invention may be combined. Accordingly, the embodiments are not mutually exclusive combinations of features; rather, the invention may comprise a combination of different individual features selected from different individual embodiments, as understood by persons of ordinary skill in the art.
Any incorporation by reference of documents above is limited such that no subject matter is incorporated that is contrary to the explicit disclosure herein. Any incorporation by reference of documents above is further limited such that no claims included in the documents are incorporated by reference herein. Any incorporation by reference of documents above is yet further limited such that any definitions provided in the documents are not incorporated by reference herein unless expressly included herein.
For purposes of interpreting the claims for the present invention, it is expressly intended that the provisions of Section 112, sixth paragraph of 35 U.S.C. are not to be invoked unless the specific terms “means for” or “step for” are recited in a claim.
Claims
1. A method of forming a conductor clip for a magnetic field current sensor comprising:
- forming a footprint portion;
- forming first and second contact portions; and
- forming first and second pillar portions coupling the first and second contact portions, respectively, to the footprint portion, the first and second pillar portions having a constant height and being at approximate right angles to the first and second contact portions and the footprint portion.
2. The method of claim 1, wherein the footprint portion, the first and second contact portions, and the first and second pillar portions are formed of a single piece of sheet metal.
3. The method of claim 1, further comprising forming a notch in the footprint portion.
4. The method of claim 3, wherein forming the notch comprises forming an end of the notch to have a radius.
5. The method of claim 3, wherein forming the notch further comprises forming the notch to have a length that is equal to or greater than a thickness of the footprint portion.
6. The method of claim 1, further comprising coupling the footprint portion to a first surface of a semiconductor die.
7. The method of claim 6, wherein coupling the footprint portion comprises coupling the footprint portion to a first surface of the die such that the first and second contact portions are separated from the first surface by the height of the first and second pillar portions.
8. The method of claim 1, wherein the constant height is monotonic.
9. A magnetic field current sensor comprising:
- a semiconductor die having at least one magnetic field sensor element;
- an inorganic insulating layer having at least one solderable metal plate on a first surface thereof; and
- a current conductor coupled to the semiconductor die via the insulating layer by a solder connection between the current conductor and the at least one solderable metal plate such that when a current is applied to the sensor less than about 10% flows through the solder connection.
10. The magnetic field current sensor of claim 9, wherein the insulating layer is formed on a surface of the semiconductor die.
11. The magnetic field current sensor of claim 9, wherein the insulating layer comprises a plate coupled to a surface of the die by a solder connection between at least one metal plate on a second surface of the insulating layer and at least one plate on the surface of the die.
12. The magnetic field current sensor of claim 11, wherein the plate comprises one of ceramic, glass, porcelain or silicon.
13. The magnetic field current sensor of claim 11, wherein the plate has a first thickness at a perimeter and second thickness at a center.
14. The magnetic field current sensor of claim 13, wherein the second thickness is less than the first thickness.
15. A method comprising:
- forming a grid of grooves in a first surface of a copper wafer;
- coupling the first surface of the copper wafer to a first surface of a semiconductor wafer;
- forming a grid of grooves in a second surface of the copper wafer, the grid of grooves formed in the first surface aligning with the grid of grooves formed in the second surface such that a portion of the copper wafer can be removed to leave a plurality of copper blocks coupled to the first surface of the semiconductor wafer; and
- singulate the semiconductor wafer such that each of the plurality of copper blocks is coupled to a semiconductor die.
16. The method of claim 15, further comprising forming a groove in the copper blocks before singulation.
17. The method of claim 16, wherein the groove formed in the copper blocks are about 300 μm deep and about 100 μm wide.
18. The method of claim 15, wherein the copper wafer is about 400 μm thick, the first grid of grooves is about 100 μm deep, and the second grid of grooves is about 300 μm deep.
19. The method of claim 15, wherein each of the plurality of copper blocks is about 1.9 mm by about 1.9 mm by about 0.4 mm.
20. The method of claim 15, wherein the copper coating is about 50 μm thick.
21. The method of claim 15, further comprising coupling a copper block to a leadframe.
22. The method of claim 21, further comprising applying a copper coating over the leadframe and copper block.
Type: Application
Filed: Dec 9, 2010
Publication Date: Jun 14, 2012
Inventors: Udo Ausserlechner (Villach), Volker Strutz (Tegernheim), Jochen Dangelmaier (Beratzhausen)
Application Number: 12/963,817
International Classification: H01L 29/82 (20060101); H01L 21/50 (20060101);