Patents by Inventor Walid M. Hafez

Walid M. Hafez has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9087719
    Abstract: Snapback ESD protection device employing one or more non-planar metal-oxide-semiconductor transistors (MOSFETs) are described. The ESD protection devices may further include lightly-doped extended drain regions, the resistances of which may be capacitively controlled through control gates independent of a gate electrode held at a ground potential. Control gates may be floated or biased to modulate ESD protection device performance. In embodiments, a plurality of core circuits are protected with a plurality of non-planar MOSFET-based ESD protection devices with control gate potentials varying across the plurality.
    Type: Grant
    Filed: September 28, 2012
    Date of Patent: July 21, 2015
    Assignee: Intel Corporation
    Inventors: Akm Ahsan, Walid M. Hafez
  • Publication number: 20150187709
    Abstract: Embodiments of the present disclosure describe techniques and configurations for overcurrent fuses in integrated circuit (IC) devices. In one embodiment, a device layer of a die may include a first line structure with a recessed portion between opposite end portions and two second line structures positioned on opposite sides of the first line structure. An isolation material may be disposed in the gaps between the line structures and in a first recess defined by the recessed portion. The isolation material may have a recessed portion that defines a second recess in the first recess, and a fuse structure may be disposed in the second recess. Other embodiments may be described and/or claimed.
    Type: Application
    Filed: December 27, 2013
    Publication date: July 2, 2015
    Inventors: Chen-Guan Lee, Walid M. Hafez, Chia-Hong Jan
  • Publication number: 20150179525
    Abstract: High voltage three-dimensional devices having dielectric liners and methods of forming high voltage three-dimensional devices having dielectric liners are described. For example, a semiconductor structure includes a first fin active region and a second fin active region disposed above a substrate. A first gate structure is disposed above a top surface of, and along sidewalls of, the first fin active region. The first gate structure includes a first gate dielectric, a first gate electrode, and first spacers. The first gate dielectric is composed of a first dielectric layer disposed on the first fin active region and along sidewalls of the first spacers, and a second, different, dielectric layer disposed on the first dielectric layer and along sidewalls of the first spacers. The semiconductor structure also includes a second gate structure disposed above a top surface of, and along sidewalls of, the second fin active region.
    Type: Application
    Filed: March 6, 2015
    Publication date: June 25, 2015
    Inventors: Walid M. Hafez, Jeng-Ya D. Yeh, Curtis Tsai, Joodong Park, Chia-Hong Jan, Gopinath Bhimarasetti
  • Patent number: 8993401
    Abstract: An apparatus includes a first device with a metal gate and a drain well that experiences a series resistance that drops a drain contact voltage from 10 V to 4-6 V at a junction between the drain well and a channel under the gate. The apparatus includes an interlayer dielectric layer (ILD0) disposed above and on the drain well and a salicide drain contact in the drain well. The apparatus also includes a subsequent device that is located in a region different from the first device that operates at a voltage lower than the first device.
    Type: Grant
    Filed: June 26, 2013
    Date of Patent: March 31, 2015
    Inventors: Walid M. Hafez, Chia-Hong Jan, Anisur Rahman
  • Patent number: 8981481
    Abstract: High voltage three-dimensional devices having dielectric liners and methods of forming high voltage three-dimensional devices having dielectric liners are described. For example, a semiconductor structure includes a first fin active region and a second fin active region disposed above a substrate. A first gate structure is disposed above a top surface of, and along sidewalls of, the first fin active region. The first gate structure includes a first gate dielectric composed of a first dielectric layer disposed on the first fin active region, and a second, different, dielectric layer disposed on the first dielectric layer. The semiconductor structure also includes a second gate structure disposed above a top surface of, and along sidewalls of, the second fin active region. The second gate structure includes a second gate dielectric composed of the second dielectric layer disposed on the second fin active region.
    Type: Grant
    Filed: June 28, 2012
    Date of Patent: March 17, 2015
    Assignee: Intel Corporation
    Inventors: Walid M. Hafez, Jeng-Ya D. Yeh, Curtis Tsai, Joodong Park, Chia-Hong Jan, Gopinath Bhimarasetti
  • Patent number: 8889508
    Abstract: Precision resistors for non-planar semiconductor device architectures are described. In a first example, a semiconductor structure includes first and second semiconductor fins disposed above a substrate. A resistor structure is disposed above the first semiconductor fin but not above the second semiconductor fin. A transistor structure is formed from the second semiconductor fin but not from the first semiconductor fin. In a second example, a semiconductor structure includes first and second semiconductor fins disposed above a substrate. An isolation region is disposed above the substrate, between the first and second semiconductor fins, and at a height less than the first and second semiconductor fins. A resistor structure is disposed above the isolation region but not above the first and second semiconductor fins. First and second transistor structures are formed from the first and second semiconductor fins, respectively.
    Type: Grant
    Filed: June 24, 2014
    Date of Patent: November 18, 2014
    Assignee: Intel Corporation
    Inventors: Jeng-Ya D. Yeh, Peter J. Vandervoorn, Walid M. Hafez, Chia-Hong Jan, Curtis Tsai, Joodong Park
  • Publication number: 20140319623
    Abstract: Two or more types of fin-based transistors having different gate structures and formed on a single integrated circuit are described. The gate structures for each type of transistor are distinguished at least by the thickness or composition of the gate dielectric layer(s) or the composition of the work function metal layer(s) in the gate electrode. Methods are also provided for fabricating an integrated circuit having at least two different types of fin-based transistors, where the transistor types are distinguished by the thickness and composition of the gate dielectric layer(s) and/or the thickness and composition of the work function metal in the gate electrode.
    Type: Application
    Filed: December 28, 2011
    Publication date: October 30, 2014
    Inventors: Curtis Tsai, Chia-Hong Jan, Jeng-Ya David Yeh, Joodong Park, Walid M. Hafez
  • Publication number: 20140308785
    Abstract: Precision resistors for non-planar semiconductor device architectures are described. In a first example, a semiconductor structure includes first and second semiconductor fins disposed above a substrate. A resistor structure is disposed above the first semiconductor fin but not above the second semiconductor fin. A transistor structure is formed from the second semiconductor fin but not from the first semiconductor fin. In a second example, a semiconductor structure includes first and second semiconductor fins disposed above a substrate. An isolation region is disposed above the substrate, between the first and second semiconductor fins, and at a height less than the first and second semiconductor fins. A resistor structure is disposed above the isolation region but not above the first and second semiconductor fins. First and second transistor structures are formed from the first and second semiconductor fins, respectively.
    Type: Application
    Filed: June 24, 2014
    Publication date: October 16, 2014
    Inventors: Jeng-Ya D. Yeh, Peter J. Vandervoorn, Walid M. Hafez, Chia-Hong Jan, Curtis Tsai, Joodong Park
  • Publication number: 20140291766
    Abstract: Techniques are disclosed for forming a planar-like transistor device on a fin-based field-effect transistor (finFET) architecture during a finFET fabrication process flow. In some embodiments, the planar-like transistor can include, for example, a semiconductor layer which is grown to locally merge/bridge a plurality of adjacent fins of the finFET architecture and subsequently planarized to provide a high-quality planar surface on which the planar-like transistor can be formed. In some instances, the semiconductor merging layer can be a bridged-epi growth, for example, comprising epitaxial silicon. In some embodiments, such a planar-like device may assist, for example, with analog, high-voltage, wide-Z transistor fabrication.
    Type: Application
    Filed: March 30, 2013
    Publication date: October 2, 2014
    Inventors: Walid M. Hafez, Peter J. Vandervoorn, Chia-Hong Jan
  • Publication number: 20140291737
    Abstract: Techniques are disclosed for forming transistor architectures having extended recessed spacer and source/drain (S/D) regions. In some embodiments, a recess can be formed, for example, in the top of a fin of a fin-based field-effect transistor (finFET), such that the recess allows for forming extended recessed spacers and S/D regions in the finFET that are adjacent to the gate stack. In some instances, this configuration provides a higher resistance path in the top of the fin, which can reduce gate-induced drain leakage (GIDL) in the finFET. In some embodiments, precise tuning of the onset of GIDL can be provided. Some embodiments may provide a reduction in junction leakage (Lb) and a simultaneous increase in threshold voltage (VT). The disclosed techniques can be implemented with planar and non-planar fin-based architectures and can be used in standard metal-oxide-semiconductor (MOS) and complementary MOS (CMOS) process flows, in some embodiments.
    Type: Application
    Filed: March 29, 2013
    Publication date: October 2, 2014
    Inventors: Walid M. Hafez, Joodong Park, Jeng-Ya D. Yeh, Chia-Hong Jan, Curtis Tsai
  • Patent number: 8829592
    Abstract: A non-volatile storage element and a method of forming the storage element. The non-volatile storage element comprises: a first electrode including a first material having a first work function; a second electrode including a second material having a second work function higher than the first work function; a first dielectric disposed between the first electrode and the second electrode, the first dielectric having a first bandgap; a second dielectric disposed between the first dielectric and the second electrode, the second dielectric having a second bandgap wider than the first bandgap and being disposed such that a quantum well is created in the first dielectric; and a third dielectric disposed between the first electrode and the first dielectric, the third dielectric being thinner than the second dielectric and having a third bandgap wider than the first bandgap.
    Type: Grant
    Filed: December 14, 2010
    Date of Patent: September 9, 2014
    Assignee: Intel Corporation
    Inventors: Walid M. Hafez, Anisur Rahman
  • Patent number: 8796772
    Abstract: Precision resistors for non-planar semiconductor device architectures are described. In a first example, a semiconductor structure includes first and second semiconductor fins disposed above a substrate. A resistor structure is disposed above the first semiconductor fin but not above the second semiconductor fin. A transistor structure is formed from the second semiconductor fin but not from the first semiconductor fin. In a second example, a semiconductor structure includes first and second semiconductor fins disposed above a substrate. An isolation region is disposed above the substrate, between the first and second semiconductor fins, and at a height less than the first and second semiconductor fins. A resistor structure is disposed above the isolation region but not above the first and second semiconductor fins. First and second transistor structures are formed from the first and second semiconductor fins, respectively.
    Type: Grant
    Filed: September 24, 2012
    Date of Patent: August 5, 2014
    Assignee: Intel Corporation
    Inventors: Jeng-Ya D. Yeh, Peter J. Vandervoorn, Walid M. Hafez, Chia-Hong Jan, Curtis Tsai, Joodong Park
  • Publication number: 20140175566
    Abstract: A dielectric constant of spacer material in a transistor is changed from a high-? dielectric material to a low-? dielectric material. The process uses oxidation treatments to enable the transformation of the high-? dielectric material to a low-? dielectric material.
    Type: Application
    Filed: December 20, 2012
    Publication date: June 26, 2014
    Inventors: Gopinath Bhimarasetti, Walid M. Hafez, Weimin C. Han
  • Patent number: 8741720
    Abstract: A semiconductor device and method to form a semiconductor device is described. The semiconductor includes a gate stack disposed on a substrate. Tip regions are disposed in the substrate on either side of the gate stack. Halo regions are disposed in the substrate adjacent the tip regions. A threshold voltage implant region is disposed in the substrate directly below the gate stack. The concentration of dopant impurity atoms of a particular conductivity type is approximately the same in both the threshold voltage implant region as in the halo regions. The method includes a dopant impurity implant technique having sufficient strength to penetrate a gate stack.
    Type: Grant
    Filed: April 5, 2013
    Date of Patent: June 3, 2014
    Assignee: Intel Corporation
    Inventors: Giuseppe Curello, Ian R. Post, Nick Lindert, Walid M. Hafez, Chia-Hong Jan, Mark T. Bohr
  • Publication number: 20140103448
    Abstract: Methods of forming and using a microelectronic structure are described. Embodiments include forming a diode between a metal fuse gate and a PMOS device, wherein the diode is disposed between a contact of the metal fuse gate and a contact of the PMOS device, and wherein the diode couples the contact of the metal fuse gate to the contact of the PMOS device.
    Type: Application
    Filed: December 19, 2013
    Publication date: April 17, 2014
    Inventors: Xianghong Tong, Zhanping Chen, Walid M. Hafez, Zhiyong Ma, Sarvesh H. Kulkarni, Kevin X. Zhang, Matthew B. Pedersen, Kevin D. Johnson
  • Publication number: 20140092506
    Abstract: Snapback ESD protection device employing one or more non-planar metal-oxide-semiconductor transistors (MOSFETs) are described. The ESD protection devices may further include lightly-doped extended drain regions, the resistances of which may be capacitively controlled through control gates independent of a gate electrode held at a ground potential. Control gates may be floated or biased to modulate ESD protection device performance. In embodiments, a plurality of core circuits are protected with a plurality of non-planar MOSFET-based ESD protection devices with control gate potentials varying across the plurality.
    Type: Application
    Filed: September 28, 2012
    Publication date: April 3, 2014
    Inventors: AKM AHSAN, Walid M. HAFEZ
  • Publication number: 20140084381
    Abstract: Precision resistors for non-planar semiconductor device architectures are described. In a first example, a semiconductor structure includes first and second semiconductor fins disposed above a substrate. A resistor structure is disposed above the first semiconductor fin but not above the second semiconductor fin. A transistor structure is formed from the second semiconductor fin but not from the first semiconductor fin. In a second example, a semiconductor structure includes first and second semiconductor fins disposed above a substrate. An isolation region is disposed above the substrate, between the first and second semiconductor fins, and at a height less than the first and second semiconductor fins. A resistor structure is disposed above the isolation region but not above the first and second semiconductor fins. First and second transistor structures are formed from the first and second semiconductor fins, respectively.
    Type: Application
    Filed: September 24, 2012
    Publication date: March 27, 2014
    Inventors: Jeng-Ya D. Yeh, Peter J. Vandervoorn, Walid M. Hafez, Chia-Hong Jan, Curtis Tsai, Joodong Park
  • Patent number: 8681573
    Abstract: Techniques and circuitry are disclosed for implementing non-volatile storage that exploit bias temperature instability (BTI) effects of high-k/metal-gate n-type or p-type metal oxide semiconductor (NMOS or PMOS) transistors. A programmed bitcell of, for example, a memory or programmable logic circuit exhibits a threshold voltage shift resulting from an applied programming bias used to program bitcells. In some cases, applying a first programming bias causes the device to have a first state, and applying a second programming bias causes the device to have a second state that is different than the first state. Programmed bitcells can be erased by applying an opposite polarity stress, and re-programmed through multiple cycles. The bitcell configuration can be used in conjunction with column/row select circuitry and/or readout circuitry, in accordance with some embodiments.
    Type: Grant
    Filed: April 25, 2013
    Date of Patent: March 25, 2014
    Assignee: Intel Corporation
    Inventors: Walid M. Hafez, Anisur Rahman, Chia-Hong Jan
  • Patent number: 8669617
    Abstract: Provided are devices having at least three and at least four different types of transistors wherein the transistors are distinguished at least by the thicknesses and or compositions of the gate dielectric regions. Methods for making devices having three and at least four different types of transistors that are distinguished at least by the thicknesses and or compositions of the gate dielectric regions are also provided.
    Type: Grant
    Filed: December 23, 2010
    Date of Patent: March 11, 2014
    Assignee: Intel Corporation
    Inventors: Chia-Hong Jan, Curtis Tsai, Joodong Park, Jeng-Ya D. Yeh, Walid M. Hafez
  • Publication number: 20140001569
    Abstract: High voltage three-dimensional devices having dielectric liners and methods of forming high voltage three-dimensional devices having dielectric liners are described. For example, a semiconductor structure includes a first fin active region and a second fin active region disposed above a substrate. A first gate structure is disposed above a top surface of, and along sidewalls of, the first fin active region. The first gate structure includes a first gate dielectric composed of a first dielectric layer disposed on the first fin active region, and a second, different, dielectric layer disposed on the first dielectric layer. The semiconductor structure also includes a second gate structure disposed above a top surface of, and along sidewalls of, the second fin active region. The second gate structure includes a second gate dielectric composed of the second dielectric layer disposed on the second fin active region.
    Type: Application
    Filed: June 28, 2012
    Publication date: January 2, 2014
    Inventors: Walid M. Hafez, Jeng-Ya D. Yeh, Curtis Tsai, Joodong Park, Chia-Hong Jan, Gopinath Bhimarasetti