Patents by Inventor Walter David

Walter David has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100101234
    Abstract: An evaporative cooler for cooling a gas stream, in particular an air stream, including a number of cooling elements located in a flow channel, is provided. A liquid, preferably water, is supplied by a feed device and will be vaporized or evaporated. In one aspect, the surface of at least one of the cooling elements has hydrophilic properties, at least in one sub-region designed to form a liquid film.
    Type: Application
    Filed: January 30, 2008
    Publication date: April 29, 2010
    Inventors: Jens Birkner, Walter David, Rudolf Gensler, Arne Grassmann, Knut Halberstadt, Beate Heimberg, Bora Kocdemir, Rainer Nies, Jörg Schürhoff, Werner Stamm
  • Patent number: 7703312
    Abstract: The inventive method discloses the local, adapted and controlled introduction of internal compressive stress in convex and concave regions, such as the root region of turbine blades, by means of at least two pressure generators.
    Type: Grant
    Filed: December 15, 2004
    Date of Patent: April 27, 2010
    Assignee: Siement Aktiengesellschaft
    Inventor: Walter David
  • Publication number: 20090194334
    Abstract: This disclosure relates in general to a method and system for controlling a drilling system for drilling a borehole in an earth formation. More specifically, but not by way of limitation, embodiments of the present invention provide systems and methods for controlling dynamic interactions between the drilling system for drilling the borehole and an inner surface of the borehole being drilled to steer the drilling system to directionally drill the borehole. In another embodiment of the present invention, data regarding the functioning of the drilling system as it drills the borehole may be sensed and interactions between the drilling system for drilling the borehole and an inner surface of the borehole may be controlled in response to the sensed data to control the drilling system as the borehole is being drilled.
    Type: Application
    Filed: February 13, 2009
    Publication date: August 6, 2009
    Applicant: Schlumberger Technology Corporation
    Inventors: Ashley Johnson, Walter David Aldred, Geoffrey Downton, Riadh Boualleg, Kjell Haugvaldstad, Michael Sheppard
  • Publication number: 20090188720
    Abstract: This disclosure relates in general to a method and system for controlling a drilling system for drilling a borehole in an earth formation. More specifically, but not by way of limitation, embodiments of the present invention provide systems and methods for controlling dynamic interactions between the drilling system for drilling the borehole and an inner surface of the borehole being drilled to steer the drilling system to directionally drill the borehole. In another embodiment of the present invention, data regarding the functioning of the drilling system as it drills the borehole may be sensed and interactions between the drilling system for drilling the borehole and an inner surface of the borehole may be controlled in response to the sensed data to control the drilling system as the borehole is being drilled.
    Type: Application
    Filed: February 13, 2009
    Publication date: July 30, 2009
    Applicant: Schlumberger Technology Corporation
    Inventors: Ashley Johnson, Walter David Aldred, Geoffrey Downton, Riadh Boualleg, Kjell Haugvaldstad, Michael Sheppard
  • Publication number: 20090177876
    Abstract: A system for generating processor hardware supports a language for significant extensions to the processor instruction set, where the designer specifies only the semantics of the new instructions and the system generates other logic. The extension language provides for the addition of processor state, including register files, and instructions that operate on that state. The language also provides for new data types to be added to the compiler to represent the state added. It allows separate specification of reference semantics and instruction implementation, and uses this to automate design verification. In addition, the system generates formatted instruction set documentation from the language specification.
    Type: Application
    Filed: October 9, 2008
    Publication date: July 9, 2009
    Inventors: Albert Ren-Rui WANG, Richard Ruddell, David William Goodwin, Earl A. Killian, Nupur Bhattacharyya, Marines Puig Medina, Walter David Lichtenstein, Pavlos Konas, Rangarajan Srinivasan, Christopher Mark Songer, Akilesh Parameswar, Dror E. Maydan, Ricardo E. Gonzalez
  • Publication number: 20090172630
    Abstract: A system for generating processor hardware supports a language for significant extensions to the processor instruction set, where the designer specifies only the semantics of the new instructions and the system generates other logic. The extension language provides for the addition of processor state, including register files, and instructions that operate on that state. The language also provides for new data types to be added to the compiler to represent the state added. It allows separate specification of reference semantics and instruction implementation, and uses this to automate design verification. In addition, the system generates formatted instruction set documentation from the language specification.
    Type: Application
    Filed: October 9, 2008
    Publication date: July 2, 2009
    Inventors: Albert Ren-Rui Wang, Richard Ruddell, David William Goodwin, Earl A. Killian, Nupur Bhattacharyya, Marines Puig Medina, Walter David Lichtenstein, Pavlos Konas, Rangarajan Srinivasan, Christopher Mark Songer, Akilesh Parameswar, Dror E. Maydan, Ricardo E. Gonzalez
  • Publication number: 20090125866
    Abstract: A method for decomposing a target pattern containing features to be printed on a wafer into multiple patterns. The method includes the steps of segmenting the target pattern into a plurality of patches; identifying critical features within each patch which violate minimum spacing requirements; generating a critical group graph for each of the plurality of patches having critical features, where the critical group graph of a given patch defines a coloring scheme of the critical features within the given patch, and the critical group graph identifies critical features extending into adjacent patches to the given patch; generating a global critical group graph for the target pattern, where the global critical group graph includes the critical group graphs of each of the plurality of patches, and an identification of the features extending into adjacent patches; and coloring the target pattern based on the coloring scheme defined by the global critical group graph.
    Type: Application
    Filed: November 13, 2008
    Publication date: May 14, 2009
    Inventors: ALBERT REN-RUI WANG, RICHARD RUDDELL, DAVID WILLIAM GOODWIN, EARL A. KILLIAM, NUPUR BHATTACHARYYA, MARINES PUIG MEDINA, WALTER DAVID LICHTENSTEIN, PAVLOS KONAS, RANGARAJAN SRINIVASAN, CHRISTOPHER MARK SONGER, AKILESH PARAMESWAR, DROR E. MAYDAN, RICARDO E. GONZALEZ
  • Publication number: 20090106984
    Abstract: A hand-held scissors for measuring and cutting fabric or other material includes: (a) a pair of cooperating, cross-connected levers movably joined at a fulcrum, each lever including a handle member on one side of the fulcrum, and a blade member on an opposite side of the fulcrum, each blade member including one elongated cutting edge, the cutting edges facing one another, a first one of the substantially ring-shaped handle members including a first handle hole, and a second one of the handle members including a second handle hole, each blade member including a substantially planar upper surface and a substantially planar opposite, lower surface, and (b) a set of measurement indicia permanently marked on the upper surface of a blade member, and the lower surface of a blade member.
    Type: Application
    Filed: October 30, 2007
    Publication date: April 30, 2009
    Inventor: Walter David Braswell
  • Publication number: 20090044977
    Abstract: This disclosure relates in general to a method and system for controlling a drilling system for drilling a borehole in an earth formation. More specifically, but not by way of limitation, embodiments of the present invention provide systems and methods for controlling dynamic interactions between the drilling system for drilling the borehole and an inner surface of the borehole being drilled to steer the drilling system to directionally drill the borehole. In another embodiment of the present invention, data regarding the functioning of the drilling system as it drills the borehole may be sensed and interactions between the drilling system for drilling the borehole and an inner surface of the borehole may be controlled in response to the sensed data to control the drilling system as the borehole is being drilled.
    Type: Application
    Filed: August 15, 2007
    Publication date: February 19, 2009
    Applicant: SCHLUMBERGER TECHNOLOGY CORPORATION
    Inventors: Ashley Johnson, Walter David Aldred, Geoffrey Charles Downton, Riadh Boualleg, Kjell Haugvaldstad, Michael Sheppard
  • Publication number: 20080282983
    Abstract: A filament, heat shield, supporting base comprised of SiC with ceramic insulators and top plate that together form an effusion assembly for use in the vacuum evaporation, molecular beam epitaxy, and ultra high vacuum deposition of epitaxial materials. The effusion assembly used together with a crucible and source material allow for the vacuum evaporation of species above 1250° C. when quantities of reactive gaseous species such as oxygen, sulphur, or reactive nitrogen are present in the deposition chamber. The relative chemical inertness of SiC even at elevated temperatures allows the SiC filament assembly to be used at high temperature especially in the presence of oxygen for the high purity epitaxial nucleation and growth layered electronic materials including semiconductors, metals, oxides, dielectric multilayer stacks, sulfides and oxides.
    Type: Application
    Filed: December 8, 2004
    Publication date: November 20, 2008
    Inventor: Walter David Braddock, IV
  • Patent number: 7437700
    Abstract: A system for generating processor hardware supports a language for significant extensions to the processor instruction set, where the designer specifies only the semantics of the new instructions and the system generates other logic. The extension language provides for the addition of processor state, including register files, and instructions that operate on that state. The language also provides for new data types to be added to the compiler to represent the state added. It allows separate specification of reference semantics and instruction implementation, and uses this to automate design verification. In addition, the system generates formatted instruction set documentation from the language specification.
    Type: Grant
    Filed: November 16, 2005
    Date of Patent: October 14, 2008
    Assignee: Tensilica, Inc.
    Inventors: Albert Ren-Rui Wang, Richard Ruddell, David William Goodwin, Earl A. Killian, Nupur Bhattacharyya, Marines Puig Medina, Walter David Lichtenstein, Pavlos Konas, Rangarajan Srinivasan, Christopher Mark Songer, Akilesh Parameswar, Dror E. Maydan, Ricardo E. Gonzalez
  • Publication number: 20080223099
    Abstract: The inventive method discloses the local, adapted and controlled introduction of internal compressive stress in convex and concave regions, such as the root region of turbine blades, by means of at least two pressure generators.
    Type: Application
    Filed: December 15, 2004
    Publication date: September 18, 2008
    Applicant: SIEMENS AKTIENGESELLSCHAFT
    Inventor: Walter David
  • Publication number: 20080157073
    Abstract: A self-aligned enhancement mode metal-oxide-compound semiconductor field effect transistor (10) includes a lower oxide layer that is a mixture of Ga2O, Ga2O3, and other gallium oxide compounds (30), and a second insulating layer that is positioned immediately on top of the gallium oxygen layer together positioned on upper surface (14) of a III-V compound semiconductor wafer structure (13). Together the lower gallium oxide compound layer and the second insulating layer form a gallium oxide gate insulating structure. The gallium oxide gate insulating structure and underlying compound semiconductor gallium arsenide layer (15) meet at an atomically abrupt interface at the surface of with the compound semiconductor wafer structure (14). The initial essentially gallium oxygen layer serves to passivate and protect the underlying compound semiconductor sure from the second insulating oxide layer. A refractory mal gate electrode layer (17) is positioned on upper surface (18) of the second insulating oxide layer.
    Type: Application
    Filed: December 29, 2006
    Publication date: July 3, 2008
    Inventor: Walter David Braddock
  • Patent number: 7308648
    Abstract: A method and system are provided for filtering harmful HTML content from an electronic document. An application program interface (API) examines the fundamental structure of the HTML content in the document. The HTML content in the electronic document is parsed into HTML elements and attributes by a tokenizer and compared to a content library by a filter in the API. The filter removes unknown HTML content as well as known content that is listed as harmful in the content library. After the harmful HTML content has removed, a new document is encoded which includes the remaining safe HTML content for viewing in a web browser.
    Type: Grant
    Filed: November 27, 2002
    Date of Patent: December 11, 2007
    Assignee: Microsoft Corporation
    Inventors: David Michael Buchthal, Lucas Jason Forschler, Thomas Patrick Gallagher, Christophe Rene Loisey, Walter David Pullen, Andrzej Turski
  • Patent number: 7190037
    Abstract: A self-aligned enhancement mode metal-oxide-compound semiconductor field effect transistor (10) includes a lower oxide layer that is a mixture of Ga2O, Ga2O3, and other gallium oxide compounds (30), and a second insulating layer that is positioned immediately on top of the gallium oxygen layer together positioned on upper surface (14) of a III-V compound semiconductor wafer structure (13). Together the lower gallium oxide compound layer and the second insulating layer form a gallium oxide gate insulating structure. The gallium oxide gate insulating structure and underlying compound semiconductor gallium arsenide layer (15) meet at an atomically abrupt interface at the surface of with the compound semiconductor wafer structure (14). The initial essentially gallium oxygen layer serves to passivate and protect the underlying compound semiconductor surface from the second insulating oxide layer. A refractory metal gate electrode layer (17) is positioned on upper surface (18) of the second insulating oxide layer.
    Type: Grant
    Filed: February 9, 2005
    Date of Patent: March 13, 2007
    Assignee: Osemi, Inc.
    Inventor: Walter David Braddock, IV
  • Patent number: 7191186
    Abstract: A method and computer-readable medium are provided for selectively importing and exporting data in an electronic document. An import application program interface (API) may be implemented to import content from a hierarchically structured document, such an XML file. The import API works in conjunction with a parser to scan the document and extract content from selected elements, nodes, attributes, and text. The import API also utilizes a callback component for processing the extracted content. An export API may also be implemented to export data to create a hierarchically structured document, such as an XML file. The export API works in conjunction with a writer to receive data and export the data as elements, nodes, attributes, and text in the hierarchically structured document.
    Type: Grant
    Filed: November 27, 2002
    Date of Patent: March 13, 2007
    Assignee: Microsoft Corporation
    Inventor: Walter David Pullen
  • Patent number: 7187045
    Abstract: A self-aligned enhancement mode metal-oxide-compound semiconductor field effect transistor includes a gate insulating structure comprised of a first conducting oxide layer comprised of indium oxide compounds positioned immediately on top of the compound semiconductor structure, and a second insulating layer comprised of either gallium oxygen and rare earth elements or gallium sulphur and rare earth elements positioned immediately on top of said first layer.
    Type: Grant
    Filed: July 16, 2002
    Date of Patent: March 6, 2007
    Assignee: OSEMI, Inc.
    Inventor: Walter David Braddock
  • Patent number: 7109729
    Abstract: An on-line method for determining the condition of low conductivity working fluids using alternating current, electro-impedance spectroscopy is provided by making measurements over a range of frequencies at temperatures at or above 50° C.
    Type: Grant
    Filed: May 15, 2003
    Date of Patent: September 19, 2006
    Assignee: ExxonMobil Research and Engineering Company
    Inventors: Alan Mark Schilowitz, Monica M. Lira-Cantu, Limin Song, Walter David Vann
  • Patent number: 7036106
    Abstract: A system for generating processor hardware supports a language for significant extensions to the processor instruction set, where the designer specifies only the semantics of the new instructions and the system generates other logic. The extension language provides for the addition of processor state, including register files, and instructions that operate on that state. The language also provides for new data types to be added to the compiler to represent the state added. It allows separate specification of reference semantics and instruction implementation, and uses this to automate design verification. In addition, the system generates formatted instruction set documentation from the language specification.
    Type: Grant
    Filed: February 17, 2000
    Date of Patent: April 25, 2006
    Assignee: Tensilica, Inc.
    Inventors: Albert Ren-Rui Wang, Richard Ruddell, David William Goodwin, Earl A. Killian, Nupur Bhattacharyya, Marines Puig Medina, Walter David Lichtenstein, Pavlos Konas, Rangarajan Srinivasan, Christopher Mark Songer, Akilesh Parameswar, Dror E. Maydan, Ricardo E. Gonzalez
  • Patent number: 6989556
    Abstract: A self-aligned enhancement mode metal-oxide-compound semiconductor field effect transistor (10) includes a gate insulating structure comprised of a first oxide layer that includes a mixture of indium and gallium oxide compounds (30) positioned immediately on top of the compound semiconductor structure, and a second insulating layer comprised of either gallium oxygen and rare earth elements or gallium sulphur and rare earth elements positioned immediately on top of said first layer. Together the lower indium gallium oxide compound layer and the second insulating layer form a gate insulating structure. The gate insulating structure and underlying compound semiconductor layer (15) meet at an atomically abrupt interface at the surface of with the compound semiconductor wafer structure (14). The first oxide layer serves to passivate and protect the underlying compound semiconductor surface from the second insulating layer and atmospheric contamination.
    Type: Grant
    Filed: June 6, 2002
    Date of Patent: January 24, 2006
    Assignee: Osemi, Inc.
    Inventor: Walter David Braddock