Abstract: A self-aligned enhancement mode metal-oxide-compound semiconductor field effect transistor (10) includes a lower oxide layer that is a mixture of Ga2O, Ga2O3, and other gallium oxide compounds (30), and a second insulating layer that is positioned immediately on top of the gallium oxygen layer together positioned on upper surface (14) of a III-V compound semiconductor wafer structure (13). Together the lower gallium oxide compound layer and the second insulating layer form a gallium oxide gate insulating structure. The gallium oxide gate insulating structure and underlying compound semiconductor gallium arsenide layer (15) meet at an atomically abrupt interface at the surface of with the compound semiconductor wafer structure (14). The initial essentially gallium oxygen layer serves to passivate and protect the underlying compound semiconductor surface from the second insulating oxide layer. A refractory metal gate electrode layer (17) is positioned on upper surface (18) of the second insulating oxide layer.

Abstract: A synthetic lubricant base stock is provided having a kinematic viscosity at 100° C. of from 5 to about 300 cS and a VI greater than 100. The base stock comprises random co-oligomers of an alpha olefin or mixtures thereof and an olefinic substituted aromatic compound which co-oligomers are prepared in the presence of a Friedel-Crafts catalyst.

Abstract: A self-aligned enhancement mode metal-oxide-compound semiconductor field effect transistor (10) includes a gate insulating structure comprised of a first conducting oxide layer comprised of indium oxide compounds (30) positioned immediately on top of the compound semiconductor structure, and a second insulating layer comprised of either gallium oxygen and rare earth elements or gallium sulphur and rare earth elements positioned immediately on top of said first layer. Together the lower indium oxide compound layer and the second insulating layer form a gate insulating structure. The gate insulating structure and underlying compound semiconductor layer (15) meet at an atomically abrupt interface at the surface of with the compound semiconductor wafer structure (14). The first conductive oxide layer serves to passivate and protect the underlying compound semiconductor surface from the second insulating layer and atmospheric contamination.

Abstract: A self-aligned enhancement mode metal-oxide-compound semiconductor field effect transistor (10) includes a gate insulating structure comprised of a first oxide layer that includes a mixture of indium and gallium oxide compounds (30) positioned immediately on top of the compound semiconductor structure, and a second insulating layer comprised of either gallium oxygen and rare earth elements or gallium sulphur and rare earth elements positioned immediately on top of said first layer. Together the lower indium gallium oxide compound layer and the second insulating layer form a gate insulating structure. The gate insulating structure and underlying compound semiconductor layer (15) meet at an atomically abrupt interface at the surface of with the compound semiconductor wafer structure (14). The first oxide layer serves to passivate and protect the underlying compound semiconductor surface from the second insulating layer and atmospheric contamination.

Abstract: A method and system for real time updating of an earth model. The efficiency with which an oil or gas well is constructed can be enhanced by updating the relevant earth model using real-time measurements of the effective density of the drilling fluid and other parameters. The method includes generating an earth model used for predicting potential problems in drilling of a borehole having a predetermined trajectory. Evaluations of the state of the borehole and local geological features are obtained which are based on the earth model. Real time data is used to create a diagnosis of the state of the borehole and local geological features. The evaluations are compared with a diagnosis to identify inconsistencies. A component of the earth model is identified that is both related to the identified inconsistency and has a high degree of uncertainty. The selected component of the earth model is then updated prior to completing construction of the borehole using the received data.

Abstract: An on-line method for determining the condition of low conductivity working fluids using alternating current, electro-impedance spectroscopy is provided by making measurements over a range of frequencies at temperatures at or above 50° C.

Abstract: The present invention provides an improved tension mask frame assembly 10 in which mask support members 40 are provided with side walls 42, 46 and a back wall 44 that are held together primarily by means of either tabs formed along an edge of the back wall 48 received into respective apertures 50 in the side wall 42 or by means of a ridge 69 formed in the side wall 62 which abuts the back wall 64.

Abstract: A self-aligned enhancement mode metal-sulfide-oxide-compound semiconductor field effect transistor (10) includes a lower sulfide layer that is a mixture of Ga2S, Ga2S3, and other gallium sulfide compounds (30), and a second insulating layer that is positioned immediately on top of the gallium sulphur layer together positioned on upper surface (14) of a III-V compound semiconductor wafer structure (13). Together the lower gallium sulfide compound layer and the second insulating layer form a gallium sulfide-oxide gate insulating structure. The gallium sulfide-oxide gate insulating structure and underlying compound semiconductor gallium arsenide layer (15) meet at an atomically abrupt interface at the surface of with the compound semiconductor wafer structure (14). The initial essentially gallium sulphur layer serves to passivate and protect the underlying compound semiconductor surface from the second insulating sulfide layer.

Abstract: An apparatus and method for reconciling resources in a managed region of a resource management system. With the apparatus and method, an object database storing objects associated with resources managed by the resource management server is queried to generate a resource file. The resource file identifies the resources managed or available in the managed region of the resource management server. A resource file is also generated for a target resource management server. The differences between the two resource files are then identified and stored in a differences file. The differences file is then used to duplicate those resources that are managed by the first resource management server but are not managed by the target resource management server. In this way, the resources available through the first resource management server will also be available through the target resource management server and services may be obtained across managed region boundaries without a change in the way the service is implemented.

Abstract: A synthetic lubricant base stock is provided hang a kinematic viscosity at 100° C. of from 5 to about 300 cS and a VI greater than 100. The base stock comprises random co-oligomers of an alpha olefin or mixtures thereof and an olefinic substituted aromatic compound which co-oligomers are prepared in the presence of a Friedel-Crafts catalyst.

Abstract: This patent is generally directed towards a method and device for providing a diode structure that has a barrier height that may be readily engineered with a series resistance that may be independently varied while simultaneously providing for the complete characterization and discernment of the barrier height in a microwave and millimeter-wave rectifying diode without the need for device fabrication and electrical measurement. The present invention generally relates to microwave and millimeterwave diodes, and more particularly to low barrier structures within these diodes that are capable of rectification of microwave and millimeterwave radiation.

Abstract: The present invention provides an improved tension mask frame assembly 10 in which mask support members 40 are provided with side walls 42, 46 and a back wall 44 that are held together primarily by means of either tabs formed along an edge of the back wall 48 received into respective apertures 50 in the side wall 42 or by means of a ridge 69 formed in the side wall 62 which abuts the back wall 64.

Abstract: A separable loadbreak connector cuff venting tool having a handle formed of an electrical insulator material. An electrically insulating head is fixed on the handle's forward end. Two or more wedges, sized and shaped for slidable insertion within the cuff, are formed on the head. A rearwardly directed force applied along the handle's longitudinal axis gradually slides the wedges within the cuff, thereby venting partial vacua from within the cuff to the surrounding atmosphere and reducing the likelihood of flashover. Optionally, a clamp may be provided on a rearward portion of the handle for use in clamping the tool's handle to a hotstick handle. As another option, a pivot fulcrum may be provided on the rearward portion of the tool's handle for use in pivotally levering the tool's handle away from the hotstick handle. The tool's head, clamp and pivot fulcrum extend transversely away from the cuff venting tool, in the same direction.

Abstract: A separable loadbreak connector cuff venting tool having a handle formed of an electrical insulator material. An electrically insulating head is fixed on the handle's forward end. Two or more wedges, sized and shaped for slidable insertion within the cuff, are formed on the head. A rearwardly directed force applied along the handle's longitudinal axis gradually slides the wedges within the cuff, thereby venting partial vacua from within the cuff to the surrounding atmosphere and reducing the likelihood of flashover. Optionally, a clamp may be provided on a rearward portion of the handle for use in clamping the tool's handle to a hotstick handle. As another option, a pivot fulcrum may be provided on the rearward portion of the tool's handle for use in pivotally levering the tool's handle away from the hotstick handle. The tool's head, clamp and pivot fulcrum extend transversely away from the cuff venting tool, in the same direction.

Abstract: A system for coating the surface of compound semiconductor wafers includes providing a single-wafer epitaxial production system in a cluster-tool architecture with a loading, storage, and transfer modules, a III-V deposition chamber, and an insulator deposition chamber. The compound semiconductor wafer is placed in the loading and transfer module and the pressure is reduced to less than 5×10−10 Torr, after which the wafer is moved to the III-V growth chamber and layers of compound semiconductor material are epitaxially grown on the surface of the wafer. The single wafer is then moved through the transfer module to the insulator chamber and an insulating cap layer is formed by thermally evaporating molecules, consisting essentially of gallium and oxygen, from an effusion cell using a thermal evaporation source that utilizes a metallic iridium crucible that is manufactured using the electroforming process.

Abstract: A self-aligned enhancement mode metal-sulfide-compound semiconductor field effect transistor (10) includes a lower sulfide layer that is a mixture of Ga2S, Ga2S3, and other gallium sulfide compounds (30), and a second insulating layer that is positioned immediately on top of the gallium sulphur layer together positioned on upper surface (14) of a III-V compound semiconductor wafer structure (13). Together the lower gallium sulfide compound layer and the second insulating layer form a gallium sulfide gate insulating structure. The gallium sulfide gate insulating structure and underlying compound semiconductor gallium arsenide layer (15) meet at an atomically abrupt interface at the surface of with the compound semiconductor wafer structure (14). The initial essentially gallium sulphur layer serves to passivate and protect the underlying compound semiconductor surface from the second insulating sulfide layer.

Abstract: This patent is generally directed towards a method and device for providing a diode structure that has a barrier height that may be readily engineered with a series resistance that may be independently varied while simultaneously providing for the complete characterization and discernment of the barrier height in a microwave and millimeter-wave rectifying diode without the need for device fabrication and electrical measurement. The present invention generally relates to microwave and millimeterwave diodes, and more particularly to low barrier structures within these diodes that are capable of rectification of microwave and millimeterwave radiation.

Abstract: A color picture tube comprises an evacuated envelope having an electron gun therein for generating at least one electron beam, a faceplate panel having a luminescent screen with phosphor lines on an interior surface thereof, and a tension focus mask. The mask has spaced apart first metal strands which are adjacent to an effective picture area of the screen and define a plurality of slots substantially parallel to the phosphor lines. Each of the first metal strands across the effective picture area have a substantially continuous insulator layer on a screen-facing side thereof. The mask also includes a plurality of second metal strands oriented substantially perpendicular to the first metal strands. The second metal strands are spaced from the insulator layer when the tube is not energized and are in contact with the insulator layer when the tube is energized.

Abstract: A preseparation processor for use in capillary electrophoresis is described. The preseparation processor contains sample processing material, preferably in the form of a membrane, for use in concentrating or chemically processing a sample, or catalyzing a chemical reaction. It is particularly suited to the concentration of dilute samples or the purification of contaminated samples. The preseparation processor facilitates reliable and reproducible separation of analytes by eliminating inconsistencies caused by a reversal of the electroosmotic flow otherwise induced by the sample processing material.

Abstract: The tube is improved by the shadow mask having an apertured active portion of parallel corrugations and integral corrugated skirt portions extending from the two opposite corrugated edges of the mask. In one embodiment, the skirt corrugations are equal in periodicity but of opposite phase to the mask corrugations.