Abstract: A method includes: after receiving an operation instruction of a first user, generating, by a first device, connection information according to the operation instruction, and providing the connection information to a second device near the first device, so that the second device obtains a first identifier through calculation according to a first information portion of the connection information by using a preset algorithm; receiving a first message that is sent by the second device according to the connection information, where the first message carries the first identifier; determining whether the first identifier matches a second identifier of the first device, where the second identifier is equal to or corresponds to a result that is generated through calculation according to the first information portion; if the first identifier matches the second identifier, sending a second message to the second device; and establishing a wireless connection to the second device.

Abstract: Various embodiments of a compensated photonic device structure and fabrication method thereof are described herein. In one aspect, a photonic device may include a substrate and a functional layer disposed on the substrate. The substrate may be made of a first material and the functional layer may be made of a second material that is different from the first material. The photonic device may also include a compensation region formed at an interface region between the substrate and the functional layer. The compensation region may be doped with compensation dopants such that a first carrier concentration around the interface region of function layer is reduced and a second carrier concentration in a bulk region of functional layer is reduced.

Abstract: A metal-ion energy storage system includes positive and negative electrodes, a separator located between the positive and negative electrodes, an electrolyte including a mixture of imidazole salt and a main metal halogen. The electrolyte includes an additive other than the main metal halogen.

Abstract: Various embodiments of a compensated photonic device structure and fabrication method thereof are described herein. A photonic device may include a silicon-on-insulator (SOI) substrate with a buried oxide (BOX) layer therein, a Si waveguide and an n-type contact layer formed on the BOX layer, a Si multiplication layer disposed on the n-type contact layer, a p-type Si charge layer disposed on the Si multiplication layer, a germanium (Ge) absorption layer disposed on the p-type Si charge layer, a p-type contact layer disposed on the Ge absorption layer, and a metal layer disposed on the p-type contact layer. A compensated region may be formed between the p-type Si charge layer and the Ge absorption layer with a portion of the compensated region in the p-type Si charge layer and another portion of the compensated region in the Ge absorption layer.

Abstract: A non-liquid electrolyte for use in an energy storage device comprising a mixture of ionic liquid and a thickener that interact to evolve into a gel network, wherein the thickener comprises a macromolecule; and a method of making the same.

Abstract: The present invention relates to the communications field, and discloses a Wi-Fi hotspot recommendation method, a terminal, and a graphical user interface, so as to resolve a problem that a Wi-Fi hotspot selected by a user according to information such as an RSSI is not necessarily a Wi-Fi hotspot with optimal Internet surfing experience in an area in which the user is located. A specific solution is as follows: A terminal scans a Wi-Fi hotspot; determines an Internet-accessible hotspot in Wi-Fi hotspots that are obtained by means of scanning; determines network quality obtained when the terminal accesses a network by using the Internet-accessible hotspot; and displays an identifier of the Internet-accessible hotspot and an identifier that indicates the network quality obtained when the terminal accesses the network by using the Internet-accessible hotspot. The present invention is applied to a Wi-Fi hotspot recommendation process.

Abstract: An energy storage system with a cathode and an anode separated by a separator, and an electrolyte. The anode includes a core of a specific metal and a coating on the core. The coating is a material other than an oxide of the specific metal.

Abstract: A metal-ion energy storage system includes positive and negative electrodes, a separator located between the positive and negative electrodes, an electrolyte including a mixture of imidazole salt and a main metal halogen. The electrolyte includes an additive other than the main metal halogen.

Abstract: A method and a system for determining a displacement of an object are provided. The method includes: providing a predetermined modal power distribution characteristic; directing a light onto the object resulting in a reflected light; propagating the reflected light through different propagation modes, receiving a resulting modal power distribution characteristic; and comparing the resulting modal power distribution characteristic with the predetermined modal power distribution characteristic to determine the displacement of the object.

Abstract: The present disclosure is related to a method, a system, a non-transitory computer-readable medium and a computer program product for calibrating time of a physiological data. The method includes providing a physiological monitoring device for storing a physiological data with a first measurement time, and the physiological monitoring device has a first counting time. A wireless communication channel is established between the physiological monitoring device and a time calibration device having a second counting time. The first counting time and the second counting time are compared to obtain a counting time deviation value, and the counting time deviation value is compared with a predetermined time deviation value. If the counting time deviation value exceeds the predetermined time deviation value, the first measurement time and the counting time deviation value are computed to obtain a calibrated measurement time of the physiological data.

Abstract: Various embodiments of a fully integrated avalanche photodiode receiver and manufacturing method thereof are described herein. A photonic device includes a silicon-on-insulator (SOI) substrate with a buried oxide (BOX) layer therein, an avalanche photodiode integrated with the SOI substrate, a capacitor integrated with the SOI substrate, a resistor integrated with the SOI substrate, and silicon passive waveguides as well as bonding pads integrated with the SOI substrate.

Abstract: A curable organopolysiloxane composition and a semiconductor device are described. In a cured state and under conditions that the temperature is 25° C. and the humidity is 60% RH, the composition has the tensile strength of 2 to 8 Mpa, the elongation at break of 35% to 100% and the index of refraction being equal to or greater than 1.45. The composition includes: (A) organopolysiloxane comprising an R13SiO1/2 unit, an R22SiO2/2 unit and an R3SiO3/2 unit; (B) branched polyorganohydrogensiloxane having the viscosity of 300 to 4000 mPa·s, wherein each molecule has on average at least three silicon-bonded hydrogen atoms and at least one aromatic group, and the content of the aromatic group is larger than 10 mol %; and (C) a hydrosilylation catalyst having the content capable of facilitating curing of the composition.

Abstract: A device generates a model associated with a multi-rate system. The multi-rate system includes a system associated with a clock rate and a sample rate, and the clock rate is greater than the sample rate. The device identifies the clock rate of the multi-rate system based on the model, and identifies a portion, of the model, associated with the sample rate. The device applies clock rate pipelining to adjust the sample rate associated with the portion of the model so that the sample rate substantially equals the clock rate, and generates code associated with the model and the applied clock rate pipelining.

Abstract: Avalanche photodiodes (APDs) having at least one top stressor layer disposed on a germanium (Ge) absorption layer are described herein. The top stressor layer can increase the tensile strain of the Ge absorption layer, thus extending the absorption of APDs to longer wavelengths beyond 1550 nm. In one embodiment, the top stressor layer has a four-layer structure, including an amorphous silicon (Si) layer disposed on the Ge absorption layer; a first silicon dioxide (SiO2) layer disposed on the amorphous Si layer, a silicon nitride (SiN) layer disposed on the first SiO2 layer, and a second SiO2 layer disposed on the SiN layer. The Ge absorption layer can be further doped by p-type dopants. The doping concentration of p-type dopants is controlled such that a graded doping profile is formed within the Ge absorption layer to decrease the dark currents in APDs.

Abstract: Various embodiments of a compensated photonic device structure and fabrication method thereof are described herein. A photonic device may include a silicon-on-insulator (SOI) substrate with a buried oxide (BOX) layer therein, a Si waveguide and an n-type contact layer formed on the BOX layer, a Si multiplication layer disposed on the n-type contact layer, a p-type Si charge layer disposed on the Si multiplication layer, a germanium (Ge) absorption layer disposed on the p-type Si charge layer, a p-type contact layer disposed on the Ge absorption layer, and a metal layer disposed on the p-type contact layer. A compensated region may be formed between the p-type Si charge layer and the Ge absorption layer with a portion of the compensated region in the p-type Si charge layer and another portion of the compensated region in the Ge absorption layer.

Abstract: Various embodiments of a compensated photonic device structure and fabrication method thereof are described herein. In one aspect, a photonic device may include a substrate and a functional layer disposed on the substrate. The substrate may be made of a first material and the functional layer may be made of a second material that is different from the first material. The photonic device may also include a compensation region formed at an interface region between the substrate and the functional layer. The compensation region may be doped with compensation dopants such that a first carrier concentration around the interface region of function layer is reduced and a second carrier concentration in a bulk region of functional layer is reduced.

Abstract: A method includes: after receiving an operation instruction of a first user, generating, by a first device, connection information according to the operation instruction, and providing the connection information to a second device near the first device, so that the second device obtains a first identifier through calculation according to a first information portion of the connection information by using a preset algorithm; receiving a first message that is sent by the second device according to the connection information, where the first message carries the first identifier; determining whether the first identifier matches a second identifier of the first device, where the second identifier is equal to or corresponds to a result that is generated through calculation according to the first information portion; if the first identifier matches the second identifier, sending a second message to the second device; and establishing a wireless connection to the second device.

Abstract: Various embodiments of a compensated photonic device structure and fabrication method thereof are described herein. In one aspect, a photonic device may include a substrate and a functional layer disposed on the substrate. The substrate may be made of a first material and the functional layer may be made of a second material that is different from the first material. The photonic device may also include a compensation region formed at an interface region between the substrate and the functional layer. The compensation region may be doped with compensation dopants such that a first carrier concentration around the interface region of function layer is reduced and a second carrier concentration in a bulk region of functional layer is reduced.

Abstract: A curable organopolysiloxane composition and a semiconductor device are described. In a cured state and under conditions that the temperature is 25° C. and the humidity is 60% RH, the composition has the tensile strength of 2 to 8 Mpa, the elongation at break of 35% to 100% and the index of refraction being equal to or greater than 1.45. The composition includes: (A) organopolysiloxane comprising an R13SiO1/2 unit, an R22SiO2/2 unit and an R3SiO3/2 unit; (B) branched polyorganohydrogensiloxane having the viscosity of 300 to 4000 mPa·s, wherein each molecule has on average at least three silicon-bonded hydrogen atoms and at least one aromatic group, and the content of the aromatic group is larger than 10 mol %; and (C) a hydrosilylation catalyst having the content capable of facilitating curing of the composition.