Abstract: A method for growth of strain free epitaxial layers of semiconductors on highly lattice mismatched substrates is suggested using a buffer layer with a solid-liquid phase transition to accommodate high mismatch between substrate and semiconductor.

Abstract: Parallel cathode electrodes extend across the base plate of a display. Each electrode has teeth projecting from both sides, the teeth of adjacent electrodes being closely spaced from one another by a gap that is bridged by a dot of an electron emitter material. A glass screen spaced by a vacuum gap above the base plate carries transparent anode stripes extending transversely of the cathode electrodes and a fluorescent layer of coloured phosphors on the anode stripes. A voltage applied between adjacent cathode electrodes and gates conduction via each electron emitter dot. A voltage applied to an anode stripe causes a part of the current from the emitter directly below the stripe to be directed towards the anode, thereby illuminating the phosphor pixel above the emitter.

Abstract: A diamond grit surface is formed on a substrate (1) having a metal surface (2), such as nickel, by applying a paste (4) of low-grade diamond grit in a binder to the surface. After driving off the binder, the diamond coated surface is placed in a reactor chamber (10) having a microwave plasma reactor (11) and connected to a hydrogen gas pump (12). The substrate (1) is heated in the hydrogen atmosphere at a reduced pressure. The metal surface (2) acts as a catalyst in the presence of the hydrogen plasma to cause regrowth of the diamond (6), giving an improved size, shape and adhesion. The method may be used to make diamond surfaces in electron emitter devices, circuit boards or abrasive devices.

Abstract: A semiconductor light emitting device includes two AlGaAs and AlGaInP Bragg reflector layers below an active layer.

Abstract: An electron emitter (2) has a semiconductor substrate (20) doped with an n-type region (21). A diamond layer (24) is doped by ion implantation with a p-type dopant to form a graded dopant profile region (27) that increases away from the upper surface of the diamond layer (24) and a thin insulating region (28) separating the p-type region (27) from the n-type region (21). The emitter (2) has a first electrical contact (23) on a lower surface of the substrate (20) and a second electrical contact (25) on the upper surface of the diamond layer (24) such that a voltage can be applied across the emitter (2) to cause tunneling of electrons from the n-type region (21) through the insulating region (28) into the p-type region (27), causing emission of electrons from an exposed surface (29).

Abstract: A two-part adhesive composition having superior adhesive strength at cryogenic temperatures contains a urethane resin composition part and a hardener part. The urethane resin composition part comprises 50 to 99% by weight of a modified polyurethane prepolymer having an epoxy group at each of its respective ends and 1 to 50% by weight of a modified urethane compound having substantially no ether cyanate (NCO) groups and at least two epoxy groups per molecule and a molecular weight of less than 800 daltons. The hardener part is a polyamine containing primary or secondary amine groups. The equivalent ratio of the amine groups of the polyamine to the epoxy groups of the urethane resin composition part is 0.5 to 2.0.

Abstract: A citrate/ethylenediamine gel method for forming oxide superconductors of the Y-Ba-Cu-O, Bi-Ca-Sr-Cu-O, Tl-Ca-Ba-Cu-O system by employing the nitrates of the individual metals and citric acid. Ethylenediamine is then added to form gels. These materials then undergo calcination and sintering processes. The respective superconductors obtained possess a superconducting zero resistance temperature at 93K, 78K and 118K respectively.