Patents by Inventor Ward D. Parkinson

Ward D. Parkinson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Immunity of phase change material to disturb in the amorphous phase
    Patent number: 9570163
    Abstract: Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
    Type: Grant
    Filed: March 30, 2015
    Date of Patent: February 14, 2017
    Assignee: Ovonyx Memory Technology, LLC
    Inventors: George A. Gordon, Semyon D. Savransky, Ward D. Parkinson, Sergey Kostylev, James Reed, Tyler A. Lowrey, Ilya V. Karpov, Gianpaolo Spadini
  • Seasoning phase change memories
    Patent number: 9536606
    Abstract: A seasoned phase change memory has been subjected to a longer pulse to adjust resistance levels prior to use of the phase change memory.
    Type: Grant
    Filed: November 5, 2014
    Date of Patent: January 3, 2017
    Assignee: Ovonyx Memory Technology, LLC
    Inventors: Ilya V. Karpov, Semyon D. Savransky, Ward D. Parkinson
  • Immunity of phase change material to disturb in the amorphous phase
    Patent number: 9251895
    Abstract: Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
    Type: Grant
    Filed: October 13, 2014
    Date of Patent: February 2, 2016
    Assignee: Carlow Innovations LLC
    Inventors: George A. Gordon, Semyon D. Savransky, Ward D. Parkinson, Sergey Kostylev, James Reed, Tyler A. Lowrey, Ilya V. Karpov, Gianpaolo Spadini
  • Immunity of Phase Change Material to Disturb in the Amorphous Phase
    Publication number: 20150206581
    Abstract: Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
    Type: Application
    Filed: March 30, 2015
    Publication date: July 23, 2015
    Inventors: George A. Gordon, Semyon D. Savransky, Ward D. Parkinson, Sergey Kostylev, James Reed, Tyler A. Lowrey, Ilya V. Karpov, Gianpaolo Spadini
  • Immunity of phase change material to disturb in the amorphous phase
    Patent number: 9036409
    Abstract: Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
    Type: Grant
    Filed: July 21, 2014
    Date of Patent: May 19, 2015
    Assignee: Ovonyx, Inc.
    Inventors: George A. Gordon, Semyon D. Savransky, Ward D. Parkinson, Sergey Kostylev, James Reed, Tyler A. Lowrey, Ilya V. Karpov, Gianpaolo Spadini
  • Immunity of Phase Change Material to Disturb in the Amorphous Phase
    Publication number: 20150109857
    Abstract: Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
    Type: Application
    Filed: October 13, 2014
    Publication date: April 23, 2015
    Inventors: George A. Gordon, Semyon D. Savransky, Ward D. Parkinson, Sergey Kostylev, James Reed, Tyler A. Lowrey, Ilya V. Karpov, Gianpaolo Spadini
  • Seasoning Phase Change Memories
    Publication number: 20150055409
    Abstract: A seasoned phase change memory has been subjected to a longer pulse to adjust resistance levels prior to use of the phase change memory.
    Type: Application
    Filed: November 5, 2014
    Publication date: February 26, 2015
    Inventors: Ilya V. Karpov, Semyon D. Savransky, Ward D. Parkinson
  • Immunity of Phase Change Material to Disturb in the Amorphous Phase
    Publication number: 20140328121
    Abstract: Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
    Type: Application
    Filed: July 21, 2014
    Publication date: November 6, 2014
    Inventors: George A. Gordon, Semyon D. Savransky, Ward D. Parkinson, Sergey Kostylev, James Reed, Tyler A. Lowrey, Ilya V. Karpov, Gianpaolo Spadini
  • Immunity of phase change material to disturb in the amorphous phase
    Patent number: 8861293
    Abstract: Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
    Type: Grant
    Filed: December 11, 2013
    Date of Patent: October 14, 2014
    Assignee: Ovonyx, Inc.
    Inventors: George A. Gordon, Semyon D. Savransky, Ward D. Parkinson, Sergey Kostylev, James Reed, Tyler A. Lowrey, Ilya V. Karpov, Gianpaolo Spadini
  • Method for using a bit specific reference level to read a phase change memory
    Patent number: 8705306
    Abstract: A voltage derived from accessing a selected bit using one read current may be utilized to read a selected bit of an untriggered phase change memory after the read current is changed. As a result, different reference voltages may be used to sense the state of more resistive versus a less resistive selected cells. The resulting read window or margin may be improved in some embodiments.
    Type: Grant
    Filed: July 23, 2012
    Date of Patent: April 22, 2014
    Assignee: Ovonyx, Inc.
    Inventors: Tyler Lowrey, Ward D. Parkinson, Ferdinando Bedeschi, Claudio Resta, Roberto Gastaldi, Giulio Casagrande
  • Immunity of Phase Change Material to Disturb in the Amorphous Phase
    Publication number: 20140098604
    Abstract: Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
    Type: Application
    Filed: December 11, 2013
    Publication date: April 10, 2014
    Applicant: Ovonyx, Inc.
    Inventors: George A. Gordon, Semyon D. Savransky, Ward D. Parkinson, Sergey Kostylev, James Reed, Tyler A. Lowrey, Ilya V. Karpov, Gianpaolo Spadini
  • Using a phase change memory as a high volume memory
    Patent number: 8566674
    Abstract: A phase change memory may be utilized in place of more conventional, higher volume memories such as static random access memory, flash memory, or dynamic random access memory. To account for the fact that the phase change memory is not yet a high volume technology, an error correcting code may be incorporated. The error correcting code may be utilized in ways which do not severely negatively impact read access times, in some embodiments.
    Type: Grant
    Filed: August 11, 2009
    Date of Patent: October 22, 2013
    Assignee: Ovonyx, Inc.
    Inventor: Ward D. Parkinson
  • Reading a phase change memory
    Patent number: 8427862
    Abstract: A phase change memory cell may be read by driving a current through the cell higher than its threshold current. A voltage derived from the selected column may be utilized to read a selected bit of a phase change memory. The read window or margin may be improved in some embodiments. A refresh cycle may be included at periodic intervals.
    Type: Grant
    Filed: November 14, 2011
    Date of Patent: April 23, 2013
    Assignee: Ovonyx, Inc.
    Inventor: Ward D. Parkinson
  • Using a Bit Specific Reference Level to Read a Memory
    Publication number: 20120287698
    Abstract: A voltage derived from accessing a selected bit using one read current may be utilized to read a selected bit of an untriggered phase change memory after the read current is changed. As a result, different reference voltages may be used to sense the state of more resistive versus a less resistive selected cells. The resulting read. window or margin may be improved in some embodiments.
    Type: Application
    Filed: July 23, 2012
    Publication date: November 15, 2012
    Inventors: Tyler Lowrey, Ward D. Parkinson, Ferdinando Bedeschi, Claudio Resta, Roberto Gastaldi, Giulio Casagrande
  • Using a bit specific reference level to read a memory
    Patent number: 8259525
    Abstract: A voltage derived from accessing a selected bit using one read current may be utilized to read a selected bit of an untriggered phase change memory after the read current is changed. As a result, different reference voltages may be used to sense the state of more resistive versus a less resistive selected cells. The resulting read window or margin may be improved in some embodiments.
    Type: Grant
    Filed: January 19, 2012
    Date of Patent: September 4, 2012
    Assignee: Ovonyx, Inc.
    Inventors: Tyler Lowrey, Ward D. Parkinson, Ferdinando Bedeschi, Claudio Resta, Roberto Gastaldi, Giulio Casagrande
  • Using A Bit Specific Reference Level To Read A Memory
    Publication number: 20120113711
    Abstract: A voltage derived from accessing a selected bit using one read current may be utilized to read a selected bit of an untriggered phase change memory after the read current is changed. As a result, different reference voltages may be used to sense the state of more resistive versus a less resistive selected cells.
    Type: Application
    Filed: January 19, 2012
    Publication date: May 10, 2012
    Inventors: Tyler Lowrey, Ward D. Parkinson, Ferdinando Bedeschi, Claudio Resta, Roberto Gastaldi, Giulio Casagrande
  • Reading A Phase Change Memory
    Publication number: 20120057393
    Abstract: A phase change memory cell may be read by driving a current through the cell higher than its threshold current. A voltage derived from the selected column may be utilized to read a selected bit of a phase change memory. The read window or margin may be improved in some embodiments. A refresh cycle may be included at periodic intervals.
    Type: Application
    Filed: November 14, 2011
    Publication date: March 8, 2012
    Inventor: Ward D. Parkinson
  • Read window in chalcogenide semiconductor memories
    Patent number: 8130536
    Abstract: Using a shorter read pulse width may increase read window in some embodiments. This may allow the use of higher voltages with less likelihood of a read disturb where a bit unintentionally changes phase.
    Type: Grant
    Filed: November 9, 2006
    Date of Patent: March 6, 2012
    Assignee: Micron Technology, Inc.
    Inventors: Ilya V. Karpov, Sergey Kostylev, George A. Gordon, Ward D. Parkinson
  • Using a bit specific reference level to read a resistive memory
    Patent number: 8116159
    Abstract: A voltage derived from accessing a selected bit using one read current may be utilized to read a selected bit of an untriggered phase change memory after the read current is changed. As a result, different reference voltages may be used to sense the state of more resistive versus a less resistive selected cells. The resulting read window or margin may be improved in some embodiments.
    Type: Grant
    Filed: March 30, 2005
    Date of Patent: February 14, 2012
    Assignee: Ovonyx, Inc.
    Inventors: Tyler Lowrey, Ward D. Parkinson, Ferdinando Bedeschi, Claudio Resta, Roberto Gastaldi, Giulio Casagrande
  • Reading phase change memories
    Patent number: 8098512
    Abstract: A read current high enough to threshold a phase change memory element may be used to read the element without thresholding the memory element. The higher current may improve performance in some cases. The memory element does not threshold because the element is read and the current stopped prior to triggering the memory element.
    Type: Grant
    Filed: March 28, 2011
    Date of Patent: January 17, 2012
    Assignee: Ovonyx, Inc.
    Inventors: Ward D. Parkinson, Giulio Casagrande, Claudio Resta, Roberto Gastaldi, Ferdinando Bedeschi