Abstract: The present teachings include a process, system and article for forming a printed image on a textile. The process includes coating the solution of an orthosilicate to form a silica network on the textile. The process includes applying an ink composition to the textile having the silica network on the textile, forming an image.

Abstract: The present teachings include a process, system and article for forming a printed image on a textile. In some embodiments, the process includes coating the textile with a layer of polydiallyldimethyl ammonium chloride cationic polymer and coating the textile with the layer of polydiallyldimethyl ammonium chloride cationic polymer with a layer of poly-4-styrene sulfonate anionic polymer. The process can further include applying an ink composition to the textile having the layer of polydiallyldimethyl ammonium chloride cationic polymer layer and the layer of poly-4-styrene sulfonate anionic polymer, forming an image.

Abstract: A multilayered memristor includes a semiconducting n-type layer, a semiconducting p-type layer, and a semiconducting intrinsic layer. The semiconducting n-type layer includes one or both of anion vacancies and metal cations. The semiconducting p-type layer includes one or both of metal cation vacancies and anions. The semiconducting intrinsic layer is coupled between the n-type layer and the p-type layer to form an electrical series connection through the n-type layer, the intrinsic layer, and the p-type layer.

Abstract: In one example, a volatile selector is switched from a low conduction state to a first high conduction state with a first voltage level and then the first voltage level is removed to activate a relaxation time for the volatile selector. The relaxation time is defined as the time the first volatile selector transitions from the high conduction state back to the low conduction state. The volatile selector is switched with a second voltage level of opposite polarity to the first voltage level to significantly reduce the relaxation time of the volatile selector.

Abstract: A nonlinear memristor device with a three-layer selector includes a memristor in electrical series with a three-layer selector. The memristor comprises at least one electrically conducting layer and at least one electrically insulating layer. The three-layer selector comprises a three-layer structure selected from the group consisting of XN—XO—XN; XN—YO—ZN; XN—YO—XN; XO—XN—XO; XO—YN—XO; XO—YN—ZO; XO—YO—XO; XO—YO—ZO; XN—YN—ZN; and XN—YN—XN, X represents a compound-forming metal different from Y and Z.

Abstract: A circuit component that exhibits a region of negative differential resistance includes: a first layer of material; and a second layer of material in contact with the first layer of material, the contact forming a first self-heating interface. The first self-heating interface is structured such that an electrical current flowing from the first layer of material to the second layer of material encounters an electrical impedance occurring at the first interface that is greater than any electrical impedance occurring in the first and second layers of material, wherein heating occurring at the first interface is dominated by Joule heating caused by the electrical impedance occurring at the first interface, and wherein the electrical impedance occurring at the first interface decreases with increasing temperature to induce a region of negative differential resistance.

Abstract: A multilayered memristor includes a semiconducting n-type layer, a semiconducting p-type layer, and a semiconducting intrinsic layer. The semiconducting n-type layer includes one or both of anion vacancies and metal cations. The semiconducting p-type layer includes one or both of metal cation vacancies and anions. The semiconducting intrinsic layer is coupled between the n-type layer and the p-type layer to form an electrical series connection through the n-type layer, the intrinsic layer, and the p-type layer.

Abstract: In one example, a volatile selector is switched from a low conduction state to a first high conduction state with a first voltage level and then the first voltage level is removed to activate a relaxation time for the volatile selector. The relaxation time is defined as the time the first volatile selector transitions from the high conduction state back to the low conduction state. The volatile selector is switched with a second voltage level of opposite polarity to the first voltage level to significantly reduce the relaxation time of the volatile selector.

Abstract: A charge trapping memristor is disclosed. An example charge trapping memristor includes a first electrode and second electrode configured on opposite sides of a channel to generate an electric potential across the channel, and a charge barrier. The example charge trapping memristor also includes a charge trapping material configured to store and release an electric charge therein, wherein storing and releasing the electric charge changes electrical properties of the channel.

Abstract: Systems and methods for protecting a network including providing a mapping between internal addresses as seen by devices of the protected network and external addresses; providing devices with a mapped address for a destination in response to a lookup request; rewriting, at a gateway, destination addresses of packets exiting the protected network based on the mapping; and rewriting, at the destination-network gateway, source addresses of packets entering the protected network based on the mapping. Embodiments include a gateway coupled to a protected network, an external network, and a name server. The name server, in response to a hostname lookup request, configured to provide a network device with the internal address; and the gateway with a mapping including the internal address, the addresses of the device, and the hostname. The gateway configured to rewrite destination addresses of outbound packets, and source addresses of inbound packets, based on the mapping.

Abstract: A memristor device with a thermally-insulating cladding includes a first electrode, a second electrode, a memristor, and a thermally-insulating cladding. The memristor is coupled in electrical series between the first electrode and the second electrode. The thermally-insulating cladding surrounds at least a portion of the memristor.

Abstract: A circuit component that exhibits a region of negative differential resistance includes: a first layer of material; and a second layer of material in contact with the first layer of material, the contact forming a first self-heating interface. The first self-heating interface is structured such that an electrical current flowing from the first layer of material to the second layer of material encounters an electrical impedance occurring at the first interface that is greater than any electrical impedance occurring in the first and second layers of material, wherein heating occurring at the first interface is dominated by Joule heating caused by the electrical impedance occurring at the first interface, and wherein the electrical impedance occurring at the first interface decreases with increasing temperature to induce a region of negative differential resistance.

Abstract: A nonlinear dielectric stack circuit element includes a first layer of material having a first dielectric constant; a second layer of material having a second dielectric constant; and a third layer of material sandwiched between the first layer of material and the second layer of material and having a third dielectric constant. The third dielectric constant has a value less than the first dielectric constant and the second dielectric constant.

Abstract: A charge trapping memristor is disclosed. An example charge trapping memristor includes a first electrode and second electrode configured on opposite sides of a channel to generate an electric potential across the channel, and a charge barrier. The example charge trapping memristor also includes a charge trapping material configured to store and release an electric charge therein, wherein storing and releasing the electric charge changes electrical properties of the channel.

Abstract: A memristor device with a thermally-insulating cladding includes a first electrode, a second electrode, a memristor, and a thermally-insulating cladding. The memristor is coupled in electrical series between the first electrode and the second electrode. The thermally-insulating cladding surrounds at least a portion of the memristor.

Abstract: A nonlinear memristor device with a three-layer selector includes a memristor in electrical series with a three-layer selector. The memristor comprises at least one electrically conducting layer and at least one electrically insulating layer. The three-layer selector comprises a three-layer structure selected from the group consisting of XN—XO—XN; XN—YO—ZN: XN—YO—XN; XO—XN—XO; XO—YN—XO; XO—YN—ZO; XO—YO—XO; XO—YO—ZO; XN—YN—ZN; and XN—YN—XN, X represents a compound-forming metal different from Y and Z.

Abstract: A display system includes a plurality of individual display devices to collectively generate an image on a display surface. At least one camera captures at least one image of the image on the display surface and captures at least one image of an object positioned near the display surface. A controller automatically adjusts a color of an object appearing in the image on the display surface based on the at least one image of an object.

Abstract: A technique to generate a three-dimensional (3D) data visualization from multi-dimensional data. A data set may be grouped into multiple groups based on a function. Data members of the groups may be mapped to respective 3D volumes via graphic elements. A value of the function for each data member may be mapped to at least one of the spatial display variables representing depth. A 3D data visualization including the 3D volumes may be generated.

Abstract: Systems and methods for protecting a network including preventing data traffic from exiting the network unless a domain name request has been performed by a device attempting to transmit the data traffic. In an embodiment, a device within the protected network attempting to send data outside the protected network requests an address for a destination outside the protected network from a domain name server (DNS). In response, the DNS provides an address of the destination to the device and a gateway. In response to receiving the address, the gateway temporarily allows access to the address. In an embodiment, a DNS is coupled to a protected network and the gateway, the DNS provides an external address to a device in response to a request; and a mapping to the gateway; the gateway, coupled to a protected network and an external network, allows traffic according to the mapping.

Abstract: An electronic apparatus is provided that includes a number of first components on a first substrate and a number of second components on a second substrate. A lamination material that includes a conducting material is placed between the first components and the second components. Any one first component can couple to a varied subset of second components.