Abstract: An object of the present invention is to solve the technical task of enhancing the performance in micro-photofabrication using far ultraviolet light, particularly ArF excimer laser at a wavelength of 193 nm, and more specifically, provide a negative resist composition hardly allowing occurrence of pattern collapse and exhibiting good resolution even in the formation of a fine pattern, and a resist pattern forming method using the composition, which are a negative resist composition comprising (A) an alkali-soluble resin, (B) a compound that contains a low molecular compound having a molecular weight of 2,000 or less and having an oxetane structure, and (C) a cationic photopolymerization initiator, and a resist pattern forming method using the composition.

Abstract: A pattern forming method comprising a step of applying a resist composition whose solubility in a negative tone developer decreases upon irradiation with an actinic ray or radiation and which contains a resin having an alicyclic hydrocarbon structure and a dispersity of 1.7 or less and being capable of increasing the polarity by the action of an acid, an exposure step, and a development step using a negative tone developer; a resist composition for use in the method; and a developer and a rinsing solution for use in the method, are provided, whereby a pattern with reduced line edge roughness and high dimensional uniformity can be formed.

Abstract: A pattern forming method comprising a step of applying a resist composition whose solubility in a negative tone developer decreases upon irradiation with an actinic ray or radiation and which contains a resin having an alicyclic hydrocarbon structure and a dispersity of 1.7 or less and being capable of increasing the polarity by the action of an acid, an exposure step, and a development step using a negative tone developer; a resist composition for use in the method; and a developer and a rinsing solution for use in the method, are provided, whereby a pattern with reduced line edge roughness and high dimensional uniformity can be formed.

Abstract: A pattern forming method includes (a) coating a substrate with a resist composition including a resin that includes a repeating unit represented by a following general formula (NGH-1), and, by the action of an acid, increases the polarity and decreases the solubility in a negative developing solution; (b) exposing; and (d) developing with a negative developing solution: wherein RNGH1 represents a hydrogen atom or an alkyl group; and RNGH2 to RNGH4 each independently represents a hydrogen atom or a hydroxyl group, provided that at least one of RNGH2 to RNGH4 represents a hydroxyl group.

Abstract: A surface-treating agent for forming a resist pattern, includes: a compound represented by formula (1) as defined in the specification, wherein the surface-treating agent is used in a step between a formation of a first resist pattern on a first resist film and a formation of a second resist film on the first resist pattern to form a second resist pattern, and a pattern-forming method uses the surface-treating agent.

Abstract: A negative resist composition includes: (A) a compound having at least one episulfide structure (a three-membered ring structure comprising two C atoms and one S atom); (B) an alkali-soluble resin; and (C) a compound capable of generating an acid upon irradiation with actinic rays or radiation, and a pattern forming method using the composition.

Abstract: A resist composition includes: (A) a resin containing a repeating unit having a specific secondary benzyl structure; and (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation, and a pattern forming method using the composition.