Abstract: A method can include determining candidate sidelink resources by a user equipment (UE) for sidelink transmission on an unlicensed band from a sidelink resource selection window based on results of a sensing operation on the unlicensed band during a sidelink sensing window, selecting a sidelink resource from the candidate sidelink resources, performing a listen-before-talk (LBT) process on the unlicensed band to obtain a channel occupancy time (COT), and performing a sidelink transmission within the COT using the first sidelink resource. The selection of the sidelink resource can be based on an LBT time that is a predicted duration of a random backoff process of the first LBT process. Also, the first sidelink resource can be selected from the candidate sidelink resources without randomization.

Abstract: A method can include determining candidate sidelink resources by a user equipment (UE) for sidelink transmission on an unlicensed band from a sidelink resource selection window based on results of a sensing operation on the unlicensed band during a sidelink sensing window, selecting a sidelink resource from the candidate sidelink resources, performing a listen-before-talk (LBT) process on the unlicensed band to obtain a channel occupancy time (COT), and performing a sidelink transmission within the COT using the first sidelink resource. The selection of the sidelink resource can be based on an LBT time that is a predicted duration of a random backoff process of the first LBT process. Also, the first sidelink resource can be selected from the candidate sidelink resources without randomization.

Abstract: A device is disclosed herein. The device includes a bias generator, an ESD driver, and a logic circuit. The bias generator includes a first transistor. The ESD driver includes a second transistor and a third transistor coupled to each other in series. The logic circuit is configured to generate a logic control signal. When the first transistor is turned on by a detection signal, the first transistor is turned off.

Abstract: Systems and methods are disclosed that provide contextual tracking information to tracking sensor systems to provide accurate and efficient object tracking. Contextual data of a first tracking sensor system is used to identify a tracked object of a second tracking sensor system.

Abstract: A semiconductor structure including a semiconductor substrate and at least one patterned dielectric layer is provided. The semiconductor substrate includes a semiconductor portion, at least one first device, at least one second device and at least one first dummy ring. The at least one first device is disposed on a first region surrounded by the semiconductor portion. The at least one second device and the at least one first dummy ring are disposed on a second region, and the second region surrounds the first region. The at least one patterned dielectric layer covers the semiconductor substrate.

Abstract: In an embodiment, a structure includes: a first device including a first dielectric layer and a first alignment mark in the first dielectric layer, the first alignment mark including a first magnetic cross, the first magnetic cross having a first north pole and a first south pole; and a second device including a second dielectric layer and a second alignment mark in the second dielectric layer, the second alignment mark including a second magnetic cross, the second magnetic cross having a second north pole and a second south pole, the first north pole aligned with the second south pole, the first south pole aligned with the second north pole, the first dielectric layer bonded to the second dielectric layer by dielectric-to-dielectric bonds, the first alignment mark bonded to the second alignment mark by metal-to-metal bonds.

Abstract: A semiconductor device includes a semiconductor substrate, an epitaxial structure, a silicide structure, a conductive structure, and a protection segment. The epitaxial structure is disposed in the semiconductor substrate. The silicide structure is disposed in the epitaxial structure. The conductive structure is disposed over the silicide structure and is electrically connected to the silicide structure. The protection segment is made of metal nitride, is disposed over the silicide structure, and is disposed between the silicide structure and the conductive structure.

Abstract: In an embodiment, a method includes: receiving a first wafer and a second wafer, the first wafer including a first alignment mark, the first alignment mark including a first grid of first magnetic features, the second wafer including a second alignment mark, the second alignment mark including a second grid of second magnetic features; aligning the first alignment mark with the second alignment mark in an optical alignment process; after the optical alignment process, aligning the first alignment mark with the second alignment mark in a magnetic alignment process, north poles of the first magnetic features being aligned with south poles of the second magnetic features, south poles of the first magnetic features being aligned with north poles of the second magnetic features; and forming bonds between the first wafer and the second wafer.

Abstract: A chemical mechanical polishing (CMP) system includes a polishing pad configured to polish a substrate. The CMP system further includes a heating system configured to adjust a temperature of the polishing pad. The heating system comprises at least one heating element spaced apart from the polishing pad. The CMP system further includes a sensor configured to measure the temperature of the polishing pad.

Abstract: The technology of this application relates to the field of filter technologies, and provides a common mode filter and a terminal device. The common mode filter includes a first winding and a second winding. A portion of the first winding and a portion of the second winding are formed, by rotating around a same axis, at a first coil layer. The other portion of the first winding and the other portion of the second winding are formed, by rotating around another same axis, at a second coil layer stacked with the first coil layer. At the first coil layer and the second coil layer, there is one turn of the second winding between each two adjacent turns of the first winding.

Abstract: A device including functional blocks and dummy cells. The functional blocks include a first functional block and a second functional block. Each dummy cell having a cell boundary defined by non-functioning active areas and non-functioning gates for filling space between the functional blocks and including a dummy cell configured to be situated between the first functional block and the second functional block such that the dummy cell directly abuts each of the first functional block and the second functional block.

Abstract: An electronic system is provided. A memory device includes a plurality of bank groups. A controller is coupled to the memory device and includes a request queue. The request queue is configured to store a plurality of requests. When the requests correspond to the different bank groups, the controller is configured to access data of the memory device according to a plurality of long burst commands corresponding to the requests. When the requests correspond to the same bank group, the controller is configured to access the data of the memory device according to a plurality of short burst commands corresponding to the requests. The short burst commands correspond to a short burst length, and the long burst commands correspond to a long burst length. The long burst length is twice the short burst length. The memory device is a low-power double data rate synchronous dynamic random access memory.

Abstract: A package structure and the manufacturing method thereof are provided. The package structure includes a semiconductor die, conductive through vias, an insulating encapsulant, and a redistribution structure. The conductive through vias are electrically coupled to the semiconductor die. The insulating encapsulant laterally encapsulates the semiconductor die and the conductive through vias, wherein the insulating encapsulant has a recess ring surrounding the semiconductor die, the conductive through vias are located under the recess ring, and a vertical projection of each of the conductive through vias overlaps with a vertical projection of the recess ring. The redistribution structure is electrically connected to the semiconductor die and the conductive through vias.

Abstract: A semiconductor device includes first and second semiconductor fins extending from a substrate and a source/drain region epitaxially grown in recesses of the first and second semiconductor fins. A top surface of the source/drain region is higher than a surface level with top surfaces of the first and second semiconductor fins. The source/drain region includes a plurality of buffer layers. Respective layers of the plurality of buffer layers are embedded between respective layers of the source/drain region.

Abstract: A self-sterilizing display device is applied to self-sterilizing with a UV light. The self-sterilizing display device includes a display, a light-incident layer, a light source, and a transparent protective layer. The light-incident layer is disposed above the display. The light source is disposed at a periphery of the light-incident layer, and a light-emitting surface of the light source faces to the light-incident layer. The transparent protective layer is disposed between the light-incident layer and the display. Herein, the light source can emit the UV light toward the light-incident layer for sterilizing an outer surface of the self-sterilizing display device by irradiation, and the transparent protective layer can filter out the UV light. Therefore, the surface can be sterilized by UV light, and the UV light can be prevented or reduced from being incident on the display below and damaging the display.

Abstract: A method of forming a semiconductor device includes: forming a passivation layer over a conductive pad that is disposed over a substrate; and forming an inductive component over the passivation layer, including: forming a first insulation layer and a first magnetic layer successively over the passivation layer; forming a first polymer layer over the first magnetic layer; forming a first conductive feature over the first polymer layer; forming a second polymer layer over the first polymer layer and the first conductive feature; patterning the second polymer layer, where after the patterning, a first sidewall of the second polymer layer includes multiple segments, where an extension of a first segment of the multiple segments intersects the second polymer layer; and after patterning the second polymer layer, forming a second insulation layer and a second magnetic layer successively over the second polymer layer.

Abstract: A semiconductor package includes a first wafer comprising a first substrate, a first device structure, and a first bonding layer having a pattern of first bonding pads. The first bonding layer is disposed over the first substrate and the first device structure. The semiconductor package includes a second wafer comprising a second substrate, a second device structure, and a second bonding layer having a pattern of second bonding pads. The second bonding layer is disposed over the first bonding layer. The second device structure is disposed over the second bonding layer. The second substrate is disposed over the second device structure. The first bonding pads are each aligned with a corresponding one of the second bonding pads. The first device structure is electrically coupled to the second device structure, through at least one of the first bonding pads and at least one of the second bonding pads.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a source/drain region arranged within a substrate. A select gate and a memory gate are arranged over the substrate. An inter-gate dielectric structure is arranged between the memory gate and the select gate. A conductive contact is disposed on the source/drain region and vertically extends from a bottom of the select gate to a top of the select gate. The select gate is closer to the conductive contact than the memory gate. The select gate has a first outermost sidewall that faces away from the memory gate and a second outermost sidewall that faces the memory gate. The first outermost sidewall is taller than the second outermost sidewall.

Abstract: The present invention relates to variant polypeptides, methods of preparing the variant polypeptides, processes for characterizing the variant polypeptides, compositions and cells comprising the variant polypeptides, and methods of using the variant polypeptides. The invention further relates to complexes comprising the variant polypeptides, methods of producing the complexes, processes for characterizing the complexes, cells comprising the complexes, and methods of using the complexes.

Abstract: A semiconductor device with doped shallow trench isolation (STI) structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a superlattice structure with first and second nanostructured layers arranged in an alternating configuration on the fin structure, depositing an oxide liner surrounding the superlattice structure and the fin structure in a first deposition process, forming a dopant source liner on the oxide liner, depositing an oxide fill layer on the dopant source liner in a second deposition process different from the first deposition process, performing a doping process to form a doped oxide liner and a doped oxide fill layer, removing portions of the doped oxide liner, the doped oxide fill layer, and the dopant source liner from sidewalls of the superlattice structure, and forming a gate structure on the fin structure and surrounding the first nanostructured layers.