Abstract: A package structure includes a frontside redistribution layer (RDL) structure with a recessed portion, a lower encapsulation layer on the frontside RDL structure and a plurality of through vias connected to the frontside RDL structure to an upper package, a first semiconductor die on the frontside RDL structure and in the lower encapsulation layer, and an integrated passive device (IPD) connected to the frontside RDL structure in the recessed portion that connects to the first semiconductor die. A method of forming a package structure includes forming a molded portion with a lower encapsulation layer, a plurality of through vias in the lower encapsulation layer and a first semiconductor die in the lower encapsulation layer, forming a RDL structure with a recessed portion on the molded portion, the plurality of through vias connect the frontside RDL structure to an upper package, and attaching an IPD in the recessed portion.

Abstract: A device includes first to third power/ground (PG) elements; a first set of at least three tracks between the first and second PG elements and a second set of at least three tracks between the second and third PG elements, the tracks being arranged in equal numbers between the first and second PG and second and third PG elements; a first row of cells overlapping the first set; and a second row of cells overlapping the second set. In the first row of cells, a first cell has a first height and a second cell has a greater height than the first height; in the second row of cells, a third cell has the first height and a fourth cell has a lesser height less than the first height; and a track configured as an in-cell PG track is aligned with a boundary of the second and fourth cells.

Abstract: A manufacturing method of an electronic package includes the following steps. A first interfacial dielectric layer is formed to cover sides of multiple first conductive vias and multiple second conductive vias. Multiple chips are directly bonded to the first and second conductive vias. A base dielectric layer is formed to fill a gap between the adjacent chips. A bridge element is directly bonded to the first conductive vias, such that the bridge element partially overlaps the adjacent chips respectively. A second interfacial dielectric layer and multiple third conductive vias are formed on the first interfacial dielectric layer and the bridge element. A redistribution circuit structure is formed on the second interfacial dielectric layer and the third conductive vias. Multiple conductive bumps are formed on the redistribution circuit structure. An electronic package is also provided.

Abstract: An electronic device is provided. The electronic device includes a panel, a light-guide plate and an attachment member. The light-guide plate is disposed on the panel. The light-guide plate has a first surface with a plurality of optical units. The attachment member contacts a part of the first surface of the light-guide plate. The loss tangent (tan ?) at 30° C. of the attachment member is greater than 0 and less than or equal to 1.

Abstract: Methods and systems include adapting an initial prompt to a target domain corresponding to an input time series to generate an adapted prompt. The adapted prompt and the input time series are combined. The input time series is processed with the adapted prompt using a modular transformer encoder that has a plurality of sub-encoders, with a policy network selecting a subset of the plurality of encoders that are applied to the input time series and the adapted prompt.

Abstract: In a semiconductor package having a redistribution structure, two or more semiconductor dies are connected to a first side of the redistribution structure and an encapsulant surrounds the two or more semiconductor dies. An integrated passive device (IPD) is connected on a second side of the redistribution structure. The second side is opposite to the first side and the IPD is electrically coupled to the redistribution structure. An interconnect device is connected on the second side of the redistribution structure and is electrically coupled to the redistribution structure. Two or more external connections are on the second side of the redistribution structure and are electrically coupled to the redistribution structure.

Abstract: Methods are taught for creating training data for a learning algorithm, training the learning algorithm with the training data and using the trained learning algorithm to suggest domain names to users. A domain name registrar may store activities of a user on a registrar website. Preferably, domain name searches, selected suggested domain names and domain names registered to the user are stored as the training data in a training database. The training data may be stored so that earlier activities act as inputs to the learning algorithm while later activities are the expected outputs of the learning algorithm.

Abstract: A vehicle violation detection method and vehicle violation detection system are provided. The method includes the following steps. A video clip including a plurality of consecutive frames is obtained, wherein the video clip is generated through photographing an intersection by an image capture device. A traffic sign object corresponding to a traffic sign and a license plate object corresponding to a license plate are detected from each of the frames. According to a sign position of the traffic sign object and a plate position of the license plate object in each of the frames, vehicle behavior information of each of the frames is obtained. By conducting regression analysis to the vehicle behavior information of each of the frames, whether a vehicle violation event has occurred is determined.

Abstract: An interaction point receives an interaction with a wearable device, wherein the interaction includes a data transmission between the wearable device and the first interaction point indicating that a user has interacted with the first interaction point. The interaction point locally processes the interaction between the wearable device and the first interaction point. Further, the interaction point provides information based on the local processing to a second interaction point.

Abstract: A process gas is flowed from an input metal gas line that is electrically grounded to an output metal gas line via a connecting tube which is electrically insulating. Couplings between the metal gas lines and the connecting tube are sealed with gas couplings. Each gas coupling includes a sealing gasket, and a clamp compressing the sealing gasket between an end of the respective metal gas line and a corresponding end of the connecting tube. The process gas is delivered to a semiconductor processing tool via the output metal gas line. At least one operation is performed at the semiconductor processing tool that utilizes both the process gas delivered to the process tool via the output metal gas line and an electrical voltage of at least 2 kilovolts. The connecting tube may be sapphire. The sealing gaskets may be polytetrafluoroethylene (PTFE) sealing gaskets.

Abstract: A semiconductor device includes a pixel array comprising a first pixel and a second pixel. The semiconductor device includes a metal structure overlying a portion of a substrate between the first pixel and the second pixel. The semiconductor device includes a first barrier layer adjacent a sidewall of the metal structure. The semiconductor device includes a passivation layer adjacent a sidewall of the first barrier layer. The first barrier layer is between the passivation layer and the metal structure.

Abstract: An integrated circuit includes a horizontal routing track in a first metal layer, and a backside routing track in a backside metal layer. The backside metal layer and the first metal layer are formed at opposite sides of a semiconductor substrate. The horizontal routing track is conductively connected to a first terminal of a first transistor without passing through a routing track in another metal layer. The backside routing track is conductively connected to a second terminal of the first transistor without passing through a routing track in another metal layer. One of the first terminal and the second terminal is a gate terminal of the first transistor while another one the first terminal and the second terminal is either a source terminal or a drain terminal of the first transistor.

Abstract: Disclosed are methods of detecting myocardial enhancer RNA levels in mammalian cardiomyocytes. In a further embodiment, a method of disrupting assembly of an enhancer DNA-Myh6 promoter-Myh7 promoter complex, is provided wherein the method comprises providing enhancer RNA to a cardiomyocyte.

Abstract: The invention provides a semiconductor structure, the semiconductor structure includes a substrate, a transistor disposed on the substrate, wherein the transistor comprises a gate structure, a source and a drain, and the gate structure of the transistor located on the substrate and extending along a first direction, and a plurality of supporting patterns located in the gate structure of the transistor, wherein the plurality of supporting patterns are separated from each other and arranged along a second direction, wherein the second direction is perpendicular to the first direction, and wherein at least four supporting patterns of the plurality of supporting patterns constitute a supporting pattern dashed line, wherein the supporting pattern dashed line extends along the second direction.

Abstract: Embodiments of the present disclosure provide a display device. The display device includes a backlight module, a first dimming box, a second dimming box, and a liquid crystal display module. The first dimming box is disposed on a light-emitting side of the backlight module. The second dimming box is disposed on a light-emitting side of the first dimming box. The liquid crystal display module is disposed on a light-emitting side of the second dimming box. A color coordinate offset between a color coordinate corresponding to a side viewing angle of 45° under the anti-peep mode and a color coordinate corresponding to a front viewing angle under the anti-peep mode is less than 0.1869.

Abstract: An integrated circuit includes a strip structure having a front side and a back side. The integrated circuit includes a gate structure on the front side of the strip structure. The integrated circuit includes an isolation structure surrounding the strip structure. The integrated circuit includes a backside via in the isolation structure. The integrated circuit includes a contact over the strip structure, wherein a first portion of the contact extends into the isolation structure and contacts the backside via. The integrated circuit includes a backside power rail on the back side of the strip structure and in contact with the backside via.

Abstract: A control device, for controlling an operation of a memory device, wherein the memory device includes a plurality of memory blocks, each of the memory blocks includes a plurality of memory cells, and each of the memory cells stores a bit-data. The control device comprises the following elements. A processor, for classifying the memory cells into a plurality of groups according to an erase count of each of the memory cells, the groups respectively correspond to a plurality of recovery times. A memory interface control circuit, coupled to the processor and the memory device, and the processor controls the memory device to perform a bit recovery operation through the memory interface control circuit. The processor selects one of the groups according to the recovery times, and performs the bit recovery operation on the bit-data of each of the memory cells in the selected group.

Abstract: A toolbox handle structure includes a chamber and a tool slot, and includes an opening on one end. A receiving tube is movably arranged in the chamber. An inner sleeve is inserted in the receiving tube. A bead-holding recess and a hole are disposed on one side adjacent to the opening. A pressing spring is disposed in the inner sleeve to abut against the pressing set. A bead is disposed in the bead-holding recess and pushed by the pressing set to protrude from the hole and abuts the receiving tube. A pressing set is moved by an external force to make the bead fall into the bead-holding recess to be released from abutting against the receiving tube.

Abstract: A method of semiconductor fabrication includes forming a plurality of mandrel recesses in a mandrel layer over a hard mask layer, performing a first patterning process on a spacer layer that is deposited over the mandrel layer to form a first opening pattern, performing a second patterning process to etch portions of the mandrel layer to form a second opening pattern, performing a third patterning process to form a third opening pattern in the hard mask layer based on the first opening pattern and the second opening pattern, and forming, through the hard mask layer, metal lines that are in a semiconductor layer under the hard mask layer and that are arranged in a pattern which corresponds to the third opening pattern.

Abstract: Systems and methods for training a time-series-language (TSLa) model adapted for domain-specific tasks. An encoder-decoder neural network can be trained to tokenize time-series data to obtain a discrete-to-language embedding space. The TSLa model can learn a linear mapping function by concatenating token embeddings from the discrete-to-language embedding space with positional encoding to obtain mixed-modality token sequences. Token augmentation can transform the tokens from the mixed-modality token sequences with to obtain augmented tokens. The augmented tokens can train the TSLa model using a computed token likelihood to predict next tokens for the mixed-modality token sequences to obtain a trained TSLa model. A domain-specific dataset can fine-tune the trained TSLa model to adapt the trained TSLa model to perform a domain-specific task.