Abstract: An integrated chip including a gate layer. An insulator layer is over the gate layer. A channel structure is over the insulator layer. A pair of source/drains are over the channel structure and laterally spaced apart by a dielectric layer. The channel structure includes a first channel layer between the insulator layer and the pair of source/drains, a second channel layer between the insulator layer and the dielectric layer, and a third channel layer between the second channel layer and the dielectric layer. The first channel layer, the second channel layer, and the third channel layer include different semiconductors.

Abstract: The present invention relates to variant polypeptides, methods of preparing the variant polypeptides, processes for characterizing the variant polypeptides, compositions and cells comprising the variant polypeptides, and methods of using the variant polypeptides. The invention further relates to complexes comprising the variant polypeptides, methods of producing the complexes, processes for characterizing the complexes, cells comprising the complexes, and methods of using the complexes.

Abstract: The present disclosure provides a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes channel members disposed over a substrate, a gate structure engaging the channel members, and an epitaxial feature adjacent the channel members. At least one of the channel members has an end portion in physical contact with an outer portion of the epitaxial feature. The end portion of the at least one of the channel members includes a first dopant of a first concentration. The outer portion of the epitaxial feature includes a second dopant of a second concentration. The first concentration is higher than the second concentration.

Abstract: In some embodiments, the present disclosure relates to a device having a semiconductor substrate including a frontside and a backside. On the frontside of the semiconductor substrate are a first source/drain region and a second source/drain region. A gate electrode is arranged on the frontside of the semiconductor substrate and includes a horizontal portion, a first vertical portion, and a second vertical portion. The horizontal portion is arranged over the frontside of the semiconductor substrate and between the first and second source/drain regions. The first vertical portion extends from the frontside towards the backside of the semiconductor substrate and contacts the horizontal portion of the gate electrode structure. The second vertical portion extends from the frontside towards the backside of the semiconductor substrate, contacts the horizontal portion of the gate electrode structure, and is separated from the first vertical portion by a channel region of the substrate.

Abstract: In an embodiment, a method includes: forming a fin extending from a substrate, the fin having a first width and a first height after the forming; forming a dummy gate stack over a channel region of the fin; growing an epitaxial source/drain in the fin adjacent the channel region; and after growing the epitaxial source/drain, replacing the dummy gate stack with a metal gate stack, the channel region of the fin having the first width and the first height before the replacing, the channel region of the fin having a second width and a second height after the replacing, the second width being less than the first width, the second height being less than the first height.

Abstract: The present disclosure is directed to methods for the formation of high-voltage nano-sheet transistors and low-voltage gate-all-around transistors on a common substrate. The method includes forming a fin structure with first and second nano-sheet layers on the substrate. The method also includes forming a gate structure having a first dielectric and a first gate electrode on the fin structure and removing portions of the fin structure not covered by the gate structure. The method further includes partially etching exposed surfaces of the first nano-sheet layers to form recessed portions of the first nano-sheet layers in the fin structure and forming a spacer structure on the recessed portions. In addition, the method includes replacing the first gate electrode with a second dielectric and a second gate electrode, and forming an epitaxial structure abutting the fin structure.

Abstract: This disclosure provides systems, methods and apparatus, including computer programs encoded on computer storage media, for switching a secondary cell to a primary cell. A user equipment (UE) monitors a first radio condition of the UE for beams of a primary cell and a second radio condition for beams of one or more secondary cells configured for the UE in carrier aggregation. The UE transmits a request to configure a candidate beam of at least one candidate secondary cell as a new primary cell in response to the first radio condition not satisfying a first threshold and the second radio condition for the at least one candidate secondary cell satisfying a second threshold. A base station determines to reconfigure at least one secondary cell as the new primary cell. The base station and the UE perform a handover of the UE to the new primary cell.

Abstract: An integrated circuit includes a plurality of first layer deep lines, a plurality of first layer shallow lines, a plurality of second layer deep lines, and a plurality of second layer shallow lines. The integrated circuit also includes a first active device and a second active device coupled between a conducting path that has a low resistivity portion and a low capacitivity portion. The first active device has an output coupled to a first layer deep line that is in the low resistivity portion. The second active device has an input coupled to a first layer shallow line that is in the low capacitivity portion. The low resistivity portion excludes the first layer shallow lines and the second layer shallow lines, and the low capacitivity portion excludes the first layer deep lines and the second layer deep lines.

Abstract: A combustion device allowing for an easy wick installation includes a container having a space forming a fuel tank, a wick holder mounted in the container, and a wick insertably mounted on the wick holder. The wick holder, along an outer peripheral edge thereof, has a resilient structure and defines an elastic portion. The elastic portion is resiliently deformable and abuts against an inner peripheral edge of the container, thereby fitting in the container. The wick has a first end inserted into the fuel tank and a second end protruding on a side of the wick holder opposite to the fuel tank.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a semiconductor fin disposed over a substrate, wherein the semiconductor fin includes a channel region and a source/drain region; a gate structure disposed over the channel region of the semiconductor fin, wherein the gate structure includes a gate spacer and a gate stack; a source/drain structure disposed over the source/drain region of the semiconductor fin; and a fin top hard mask vertically interposed between the gate spacer and the semiconductor fin, wherein the fin top hard mask includes a dielectric layer, and wherein a sidewall of the fin top hard mask directly contacts the gate stack, and another sidewall of the fin top hard mask directly contacts the source/drain structure.

Abstract: Provided are improved end-to-end self-supervised pre-training frameworks that leverage a combination of contrastive and masked modeling loss terms. In particular, the present disclosure provides framework that combines contrastive learning and masked modeling, where the former trains the model to discretize input data (e.g., continuous signals such as continuous speech signals) into a finite set of discriminative tokens, and the latter trains the model to learn contextualized representations via solving a masked prediction task consuming the discretized tokens. In contrast to certain existing masked modeling-based pre-training frameworks which rely on an iterative re-clustering and re-training process or other existing frameworks which concatenate two separately trained modules, the proposed framework can enable a model to be optimized in an end-to-end fashion by solving the two self-supervised tasks (the contrastive task and masked modeling) simultaneously.

Abstract: Systems and methods for personalized federated learning. The method may include receiving at a central server local models from a plurality of clients, and aggregating a heterogeneous data distribution extracted from the local models. The method can further include processing the data distribution as a linear mixture of joint distributions to provide a global learning model, and transmitting the global learning model to the clients. The global learning model is used to update the local model.

Abstract: A test strip detecting system includes a test strip, a test strip detecting carrier and a mobile communication apparatus. The test strip detecting carrier includes a container structure, positioning markers and colorimetric calibrating blocks, and the colorimetric calibrating blocks are embedded inside the positioning markers. The test strip is placed in the container structure and reacts with a specimen to generate color blocks. The mobile communication apparatus controls an image capture unit to capture an original image of the test strip placed in the test strip detecting carrier; detects the positioning markers in the original image to obtain a plurality of coordinates of the positioning markers; performs image coordinate calibration according to the plurality of coordinates to generate a calibrated image; and performs a colorimetric calibration for the color blocks and the colorimetric calibrating blocks according to the calibrated image so as to generate a test result.

Abstract: A method of cleaning a semiconductor wafer includes: loading a semiconductor wafer into a cell having an annular trough; moving a plurality of nozzles into operational orientations for spraying a cleaning solution onto a top surface of the loaded semiconductor wafer; spraying the cleaning solution from each nozzle onto the top surface of the loaded semiconductor wafer in a direction defined by each nozzle's operational orientation such that a patterned flow of cleaning solution is formed on the top surface of the loaded semiconductor wafer; and collecting the cleaning solution in the annular trough of the cell as it flows off the top surface of the loaded semiconductor wafer.

Abstract: In an embodiment, a package includes: an interposer having a first side; a first integrated circuit device attached to the first side of the interposer; a second integrated circuit device attached to the first side of the interposer; an underfill disposed beneath the first integrated circuit device and the second integrated circuit device; and an encapsulant disposed around the first integrated circuit device and the second integrated circuit device, a first portion of the encapsulant extending through the underfill, the first portion of the encapsulant physically disposed between the first integrated circuit device and the second integrated circuit device, the first portion of the encapsulant being planar with edges of the underfill and edges of the first and second integrated circuit devices.

Abstract: A semiconductor device includes a semiconductor substrate; a plurality of channel regions, including a p-type channel region and an n-type channel region, disposed over the semiconductor substrate; and a gate structure. The gate structure includes a gate dielectric layer disposed over the plurality of channel regions and a work function metal (WFM) structure disposed over the gate dielectric layer. The WFM structure includes an n-type WFM layer over the n-type channel region and not over the p-type channel region and further includes a p-type WFM layer over both the n-type WFM layer and the p-type channel region. The gate structure further includes a fill metal layer disposed over the WFM structure and in direct contact with the p-type WFM layer.

Abstract: Various embodiments of the present application are directed to an IC, and associated forming methods. In some embodiments, the IC comprises a memory region and a logic region integrated in a substrate. A plurality of memory cell structures is disposed on the memory region. Each memory cell structure of the plurality of memory cell structures comprises a control gate electrode disposed over the substrate, a select gate electrode disposed on one side of the control gate electrode, and a spacer between the control gate electrode and the select gate electrode. A contact etch stop layer (CESL) is disposed along an upper surface of the substrate, extending upwardly along and in direct contact with a sidewall surface of the select gate electrode within the memory region. A lower inter-layer dielectric layer is disposed on the CESL between the plurality of memory cell structures within the memory region.

Abstract: A display panel and a display device are provided. The display panel includes a first substrate, a second substrate, and a liquid crystal layer between the first substrate and the second substrate. The liquid crystal layer comprises a plurality of liquid crystal molecules. When the display panel is in a first display mode, the plurality of liquid crystal molecules rotate in a slanted plane parallel to a first direction and a second direction. The first direction is slanted with respect to a thickness direction of the display panel, and the second direction is perpendicular to the thickness direction of the display panel and the first direction.

Abstract: A method includes receiving a device design layout and a scribe line design layout surrounding the device design layout. The device design layout and the scribe line design layout are rotated in different directions. An optical proximity correction (OPC) process is performed on the rotated device design layout and the rotated scribe line design layout. A reticle includes the device design layout and the scribe line design layout is formed after performing the OPC process.