Patents by Inventor Wei Cheng Hsu

Wei Cheng Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240128216
    Abstract: A bonding structure that may be used to form 3D-IC devices is formed using first oblong bonding pads on a first substrate and second oblong bonding pads one a second substrate. The first and second oblong bonding pads are laid crosswise, and the bond is formed. Viewed in a first cross-section, the first bonding pad is wider than the second bonding pad. Viewed in a second cross-section at a right angle to the first, the second bonding pad is wider than the first bonding pad. Making the bonding pads oblong and angling them relative to one another reduces variations in bonding area due to shifts in alignment between the first substrate and the second substrate. The oblong shape in a suitable orientation may also be used to reduce capacitive coupling between one of the bonding pads and nearby wires.
    Type: Application
    Filed: January 4, 2023
    Publication date: April 18, 2024
    Inventors: Hao-Lin Yang, Kuan-Chieh Huang, Wei-Cheng Hsu, Tzu-Jui Wang, Ching-Chun Wang, Hsiao-Hui Tseng, Chen-Jong Wang, Dun-Nian Yaung
  • Patent number: 11955439
    Abstract: A semiconductor package includes a semiconductor die, a redistribution structure and connective terminals. The redistribution structure is disposed on the semiconductor die and includes a first metallization tier disposed in between a pair of dielectric layers. The first metallization tier includes routing conductive traces electrically connected to the semiconductor die and a shielding plate electrically insulated from the semiconductor die. The connective terminals include dummy connective terminals and active connective terminals. The dummy connective terminals are disposed on the redistribution structure and are electrically connected to the shielding plate. The active connective terminals are disposed on the redistribution structure and are electrically connected to the routing conductive traces. Vertical projections of the dummy connective terminals fall on the shielding plate.
    Type: Grant
    Filed: January 17, 2023
    Date of Patent: April 9, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wei-Cheng Wu, Chien-Chia Chiu, Cheng-Hsien Hsieh, Li-Han Hsu, Meng-Tsan Lee, Tsung-Shu Lin
  • Patent number: 11940737
    Abstract: A method includes receiving a device design layout and a scribe line design layout surrounding the device design layout. The device design layout and the scribe line design layout are rotated in different directions. An optical proximity correction (OPC) process is performed on the rotated device design layout and the rotated scribe line design layout. A reticle includes the device design layout and the scribe line design layout is formed after performing the OPC process.
    Type: Grant
    Filed: May 7, 2021
    Date of Patent: March 26, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hsueh-Yi Chung, Yung-Cheng Chen, Fei-Gwo Tsai, Chi-Hung Liao, Shih-Chi Fu, Wei-Ti Hsu, Jui-Ping Chuang, Tzong-Sheng Chang, Kuei-Shun Chen, Meng-Wei Chen
  • Publication number: 20240096918
    Abstract: A device structure according to the present disclosure may include a first die having a first substrate and a first interconnect structure, a second die having a second substrate and a second interconnect structure, and a third die having a third interconnect structure and a third substrate. The first interconnect structure is bonded to the second substrate via a first plurality of bonding layers. The second interconnect structure is bonded to the third interconnect structure via a second plurality of bonding layers. The third substrate includes a plurality of photodiodes and a first transistor. The second die includes a second transistor having a source connected to a drain of the first transistor, a third transistor having a gate connected to drain of the first transistor and the source of the second transistor, and a fourth transistor having a drain connected to the source of the third transistor.
    Type: Application
    Filed: January 17, 2023
    Publication date: March 21, 2024
    Inventors: Hao-Lin Yang, Tzu-Jui Wang, Wei-Cheng Hsu, Cheng-Jong Wang, Dun-Nian Yuang, Kuan-Chieh Huang
  • Publication number: 20240094626
    Abstract: A pellicle for an extreme ultraviolet (EUV) photomask includes a pellicle frame and a main membrane attached to the pellicle frame. The main membrane includes a plurality of nanotubes, and each of the plurality of nanotubes is covered by a coating layer containing Si and one or more metal elements.
    Type: Application
    Filed: April 12, 2023
    Publication date: March 21, 2024
    Inventors: Pei-Cheng HSU, Wei-Hao LEE, Huan-Ling LEE, Hsin-Chang LEE, Chin-Hsiang LIN
  • Patent number: 11929730
    Abstract: An acoustic wave element includes: a substrate; a bonding structure on the substrate; a support layer on the bonding structure; a first electrode including a lower surface on the support layer; a cavity positioned between the support layer and the first electrode and exposing a lower surface of the first electrode; a piezoelectric layer on the first electrode; and a second electrode on the piezoelectric layer, wherein at least one of the first electrode and the second electrode includes a first layer and a second layer that the first layer has a first acoustic impedance and a first electrical impedance, the second layer has a second acoustic impedance and a second electrical impedance, wherein the first acoustic impedance is higher than the second acoustic impedance, and the second electrical impedance is lower than the first electrical impedance.
    Type: Grant
    Filed: February 10, 2021
    Date of Patent: March 12, 2024
    Assignee: EPISTAR CORPORATION
    Inventors: Ta-Cheng Hsu, Wei-Shou Chen, Chun-Yi Lin, Chung-Jen Chung, Wei-Tsuen Ye, Wei-Ching Guo
  • Publication number: 20240079434
    Abstract: Various embodiments of the present disclosure are directed towards an image sensor including first chip and a second chip. The first chip includes a first substrate, a plurality of photodetectors disposed in the first substrate, a first interconnect structure disposed on a front side of the first substrate, and a first bond structure disposed on the first interconnect structure. The second chip underlies the first chip. The second chip includes a second substrate, a plurality of semiconductor devices disposed on the second substrate, a second interconnect structure disposed on a front side of the second substrate, and a second bond structure disposed on the second interconnect structure. A first bonding interface is disposed between the second bond structure and the first bond structure. The second interconnect structure is electrically coupled to the first interconnect structure by way of the first and second bond structures.
    Type: Application
    Filed: January 5, 2023
    Publication date: March 7, 2024
    Inventors: Hao-Lin Yang, Kuan-Chieh Huang, Wei-Cheng Hsu, Tzu-Jui Wang, Chen-Jong Wang, Dun-Nian Yaung, Yu-Chun Chen
  • Publication number: 20230319418
    Abstract: A head-mounted display device and a control method for an eye-tracking operation are provided. The head-mounted display device includes a frame, a track, a sensor and a controller. The track is disposed on a peripheral region of the frame. The sensor is disposed on the track, and is configured to capture a target image of a target area. The controller is coupled to the sensor, is configured to generate a control signal according to the target image, and adjust a position of the sensor on the peripheral region by moving the sensor according to the control signal.
    Type: Application
    Filed: January 3, 2023
    Publication date: October 5, 2023
    Applicant: HTC Corporation
    Inventors: Yan-Min Kuo, Jun-Lin Guo, Wei-Chen Chen, Chih-Lin Chang, Wei-Cheng Hsu, Cheng-Yu Chen
  • Publication number: 20230305296
    Abstract: A head-mounted display device includes a body, an eye tracking module and a face gasket. The body has a first lens and a second lens corresponding to both eyes, and also has a first positioning portion. The eye tracking module is assembled to and electrically connected to the body and includes an outer frame, a first camera, a second camera, a first lens frame and a second lens frame. The outer frame has a second positioning portion. The second positioning portion is used for connecting with the first positioning portion, so that the outer frame is positioned on the body. The first lens frame and the second lens frame are movably arranged on the outer frame. The first lens frame is used for connecting the first lens. The second lens frame is used for connecting the second lens. The first camera is arranged on the first lens frame. The second camera is arranged on the second lens frame. The first camera and the second camera are used to shoot both eyes.
    Type: Application
    Filed: July 28, 2022
    Publication date: September 28, 2023
    Applicant: HTC Corporation
    Inventors: Wei-Cheng Hsu, Cheng-Yu Chen, Syuan-He Shih, Chih-Lin Chang
  • Publication number: 20230290824
    Abstract: A method for forming a semiconductor device structure includes forming first nanostructures and second nanostructures over a substrate. The method also includes forming a first metal gate layer surrounding the first nanostructures and over the first nanostructures and the second nanostructures. The method also includes etching back the first metal gate layer over the first nanostructures and the second nanostructures. The method also includes removing the first metal gate layer over the second nanostructures. The method also includes forming a second metal gate layer surrounding the second nanostructures and over the first nanostructures and the second nanostructures.
    Type: Application
    Filed: March 10, 2022
    Publication date: September 14, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wen-Yao YANG, Chia-Wei CHEN, Wei-Cheng HSU, Jo-Chun HUNG, Yung-Hsiang CHAN, Hui-Chi CHEN, Yen-Ta LIN, Te-Fu YEH, Yun-Chen WU, Yen-Ju CHEN, Chih-Ming SUN
  • Publication number: 20230261021
    Abstract: Various embodiments of the present disclosure are directed towards an image sensor. The image sensor includes a deep trench isolation (DTI) structure disposed in a substrate. A pixel region of the substrate is disposed within an inner perimeter of the DTI structure. A photodetector is disposed in the pixel region of the substrate. A gate electrode structure overlies, at least partially, the pixel region of the substrate. A first gate dielectric structure partially overlies the pixel region of the substrate. A second gate dielectric structure partially overlies the pixel region of the substrate. The gate electrode structure overlies both a portion of the first gate dielectric structure and a portion of the second gate dielectric structure. The first gate dielectric structure has a first thickness. The second gate dielectric structure has a second thickness that is greater than the first thickness.
    Type: Application
    Filed: May 23, 2022
    Publication date: August 17, 2023
    Inventors: Tzu-Jui Wang, Dun-Nian Yaung, Chen-Jong Wang, Ming-Chieh Hsu, Wei-Cheng Hsu, Yuichiro Yamashita
  • Publication number: 20230215929
    Abstract: The present disclosure provides a semiconductor device and a method of forming the same. The semiconductor device includes a first channel members being vertically stacked, a second channel members being vertically stacked, an n-type work function layer wrapping around each of the first channel members, a first p-type work function layer over the n-type work function layer and wrapping around each of the first channel members, a second p-type work function layer wrapping around each of the second channel members, a third p-type work function layer over the second p-type work function layer and wrapping around each of the second channel members, and a gate cap layer over a top surface of the first p-type work function layer and a top surface of the third p-type work function layer such that the gate cap layer electrically couples the first p-type work function layer and the third p-type work function layer.
    Type: Application
    Filed: March 13, 2023
    Publication date: July 6, 2023
    Inventors: Chia-Wei Chen, Wei Cheng Hsu, Hui-Chi Chen, Jian-Hao Chen, Kuo-Feng Yu, Shih-Hang Chiu, Wei-Cheng Wang, Yen-Ju Chen
  • Publication number: 20230109829
    Abstract: In some embodiments, the present disclosure relates to method for forming an image sensor integrated chip. The method includes forming a first photodetector region in a substrate and forming a second photodetector region in the substrate. A floating diffusion node is formed in the substrate between the first photodetector region and the second photodetector region. A pick-up well contact region is formed in the substrate. A first line intersects the floating diffusion node and the pick-up well contact region. One or more transistor gates are formed on the substrate. A second line that is perpendicular to the first line intersects the pick-up well contact region and the one or more transistor gates.
    Type: Application
    Filed: December 9, 2022
    Publication date: April 13, 2023
    Inventors: Seiji Takahashi, Chen-Jong Wang, Dun-Nian Yaung, Feng-Chi Hung, Feng-Jia Shiu, Jen-Cheng Liu, Jhy-Jyi Sze, Chun-Wei Chang, Wei-Cheng Hsu, Wei Chuang Wu, Yimin Huang
  • Patent number: 11605720
    Abstract: The present disclosure provides a semiconductor device and a method of forming the same. The semiconductor device includes a first channel members being vertically stacked, a second channel members being vertically stacked, an n-type work function layer wrapping around each of the first channel members, a first p-type work function layer over the n-type work function layer and wrapping around each of the first channel members, a second p-type work function layer wrapping around each of the second channel members, a third p-type work function layer over the second p-type work function layer and wrapping around each of the second channel members, and a gate cap layer over a top surface of the first p-type work function layer and a top surface of the third p-type work function layer such that the gate cap layer electrically couples the first p-type work function layer and the third p-type work function layer.
    Type: Grant
    Filed: February 26, 2021
    Date of Patent: March 14, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chia-Wei Chen, Wei Cheng Hsu, Hui-Chi Chen, Jian-Hao Chen, Kuo-Feng Yu, Shih-Hang Chiu, Wei-Cheng Wang, Yen-Ju Chen
  • Publication number: 20230010952
    Abstract: A semiconductor device includes stacks of nano-structures that each extend in a first horizontal direction. The stacks each extend in a vertical direction and are separated from one another in a second horizontal direction. A first gate is disposed over a first subset of the stacks. A second gate is disposed over a second subset of the stacks. A first conductive capping layer is disposed over a substantial entirety of an upper surface of the first gate. A second conductive capping layer is disposed over a substantial entirety of an upper surface of the second gate. A dielectric structure is disposed between the first gate and the second gate in the second horizontal direction. The dielectric structure physically and electrically separates the first gate and the second gate. An upper surface of the dielectric structure is substantially free of having the first or second conductive capping layers disposed thereon.
    Type: Application
    Filed: May 5, 2022
    Publication date: January 12, 2023
    Inventors: Chia-Wei Chen, Wei Cheng Hsu, Hui-Chi Chen, Jian-Hao Chen, Kuo-Feng Yu, Shih-Hang Chiu, Wei-Cheng Wang, Yen-Ju Chen, Chun-Chih Cheng
  • Patent number: 11538837
    Abstract: In some embodiments, a pixel sensor is provided. The pixel sensor includes a first photodetector arranged in a semiconductor substrate. A second photodetector is arranged in the semiconductor substrate, where a first substantially straight line axis intersects a center point of the first photodetector and a center point of the second photodetector. A floating diffusion node is arranged in the semiconductor substrate at a point that is a substantially equal distance from the first photodetector and the second photodetector. A pick-up well contact region is arranged in the semiconductor substrate, where a second substantially straight line axis that is substantially perpendicular to the first substantially straight line axis intersects a center point of the floating diffusion node and a center point of the pick-up well contact region.
    Type: Grant
    Filed: May 5, 2021
    Date of Patent: December 27, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Seiji Takahashi, Chen-Jong Wang, Dun-Nian Yaung, Feng-Chi Hung, Feng-Jia Shiu, Jen-Cheng Liu, Jhy-Jyi Sze, Chun-Wei Chang, Wei-Cheng Hsu, Wei Chuang Wu, Yimin Huang
  • Patent number: 11487393
    Abstract: A method for preparing stacking structure includes providing a substrate; disposing a metallic layer and a silver nanowire layer on the substrate; applying flexographic printing technology to print an anti-etching layer on a surface of the metallic layer or the silver nanowire layer so that the anti-etching layer partially covers the metallic layer or the silver nanowire layer; applying an etching technology to remove a part of the metallic layer or the silver nanowire layer that is not covered by the anti-etching layer and the metallic layer or the silver nanowire layer disposed therebelow with an etching liquid so that the metallic layer comprises: metallic wires; a metallic grid; and a metallic plate; and removing the anti-etching layer. A stacking structure comprises: the substrate; the metallic layer; and the silver nanowire layer. The method for preparing stacking structure and the stacking structure can be applied to a touch sensor.
    Type: Grant
    Filed: September 29, 2020
    Date of Patent: November 1, 2022
    Assignee: Cambrios Film Solutions Corporation
    Inventors: Yi-Chen Tsai, Wei-Chia Fang, Chun-Hung Chu, Chung-Chin Hsiao, Meng-Yun Wu, Tsu-Hsuan Lai, Wei-Cheng Hsu
  • Publication number: 20220301739
    Abstract: An optically consistent transparent conductor includes a first region and a second region. The first region includes a plurality of nanostructures. The first region has a first electrical resistivity and a first haze. The second region has a second electrical resistivity and a second haze. A difference in ratio between the first electrical resistivity and the second electrical resistivity is in a range from 5% to 9900%, and a difference in ratio between the first haze and the second haze is in a range from 2% to 500%.
    Type: Application
    Filed: March 16, 2021
    Publication date: September 22, 2022
    Inventors: Shih-Ching Chen, Wei-Chia Fang, En-Chia Chang, Wei-Cheng Hsu, Chung-Chin Hsiao
  • Publication number: 20220285514
    Abstract: A semiconductor device includes a plurality of active region structures that each protrude upwards in a vertical direction. The active region structures each extend in a first horizontal direction. The active region structures are separated from one another in a second horizontal direction different from the first horizontal direction. A gate structure is disposed over the active region structures. The gate structure extends in the second horizontal direction. The gate structure partially wraps around each of the active region structures. A conductive capping layer is disposed over the gate structure. A gate via is disposed over the conductive capping layer. A dimension of the conductive capping layer measured in the second horizontal direction is substantially greater than a maximum dimension of the gate via measured in the second horizontal direction.
    Type: Application
    Filed: September 3, 2021
    Publication date: September 8, 2022
    Inventors: Chia-Wei Chen, Wei Cheng Hsu, Hui-Chi Chen, Jian-Hao Chen, Kuo-Feng Yu, Shih-Hang Chiu, Wei-Cheng Wang, Kuan-Ting Liu, Yen-Ju Chen, Chun-Chih Cheng, Wei-Chen Hsiao
  • Publication number: 20220278218
    Abstract: The present disclosure provides a semiconductor device and a method of forming the same. The semiconductor device includes a first channel members being vertically stacked, a second channel members being vertically stacked, an n-type work function layer wrapping around each of the first channel members, a first p-type work function layer over the n-type work function layer and wrapping around each of the first channel members, a second p-type work function layer wrapping around each of the second channel members, a third p-type work function layer over the second p-type work function layer and wrapping around each of the second channel members, and a gate cap layer over a top surface of the first p-type work function layer and a top surface of the third p-type work function layer such that the gate cap layer electrically couples the first p-type work function layer and the third p-type work function layer.
    Type: Application
    Filed: February 26, 2021
    Publication date: September 1, 2022
    Inventors: Chia-Wei Chen, Wei Cheng Hsu, Hui-Chi Chen, Jian-Hao Chen, Kuo-Feng Yu, Shih-Hang Chiu, Wei-Cheng Wang, Yen-Ju Chen