Patents by Inventor Wei Cheng Lin

Wei Cheng Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12006749
    Abstract: A displaceable rotating shaft structure and a foldable device having the rotating shaft structure are disclosed. The displaceable rotating shaft structure comprises a support, a rotating shaft, a connecting rod assembly, a guide assembly, and a torsion assembly. The support has a supporting portion. The connecting rod assembly has a first outer end that is rotatably connected to the linking section of the rotating shaft and a second outer end that is pivotally connected to the supporting portion. The guide assembly has a guide rod. The guide rod is configured to displace relative to the supporting portion. When the rotating shaft is rotated, the rotating shaft drives the connecting rod assembly to adjust the angle and the total length of a joint of connecting rods of the connecting rod assembly, a distance between the rotating shaft and the support is changed through the guide assembly.
    Type: Grant
    Filed: October 25, 2022
    Date of Patent: June 11, 2024
    Assignee: Fositek Corporation
    Inventors: Wen-Yen Lin, Wei-Cheng Chien
  • Publication number: 20240180294
    Abstract: A method for manufacturing a recycled carbon fiber underlay, which mixes recycled carbon fiber material with nylon or composite plastic and forms an elastic recycled carbon fiber injection particle material, and under an injection process condition, the recycled carbon fiber injection particle material is injected and molded into a recycled carbon fiber underlay. The recycled carbon fiber arch insole comprises a recycled carbon fiber underlay manufactured by the aforementioned manufacturing method, together with the data of podiatric medical big numeric database of human factors engineering for the innovative design of mechanical insole products and the application development of recycled materials to encourage recycling to reduce carbon emissions, while improving the function, durability, and comfort of insole inserts.
    Type: Application
    Filed: February 13, 2023
    Publication date: June 6, 2024
    Inventor: WEI-CHENG LIN
  • Patent number: 12003242
    Abstract: An integrated circuit includes a first inverter, a first transmission gate, and a second inverter constructed with wide type-one transistors and wide type-two transistors. The integrated circuit also includes a first clocked inverter and a second clocked inverter constructed with narrow type-one transistors and narrow type-two transistors. A master latch is formed with the first inverter and the first clocked inverter. A slave latch is formed with the second inverter and the second clocked inverter. The first transmission gate is coupled between the master latch and the slave latch. The wide type-one transistors are formed in a wide type-one active-region structure and the narrow type-one transistors are formed in a narrow type-one active-region structure. The wide type-two transistors are formed in a wide type-two active-region structure and the narrow type-two transistors are formed in in a narrow type-two active-region structure.
    Type: Grant
    Filed: January 27, 2023
    Date of Patent: June 4, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ching-Yu Huang, Jiann-Tyng Tzeng, Wei-Cheng Lin
  • Publication number: 20240178214
    Abstract: An integrated circuit includes a horizontal routing track in a first metal layer, and a backside routing track in a backside metal layer. The backside metal layer and the first metal layer are formed at opposite sides of a semiconductor substrate. The horizontal routing track is conductively connected to a first terminal of a first transistor without passing through a routing track in another metal layer. The backside routing track is conductively connected to a second terminal of the first transistor without passing through a routing track in another metal layer. One of the first terminal and the second terminal is a gate terminal of the first transistor while another one the first terminal and the second terminal is either a source terminal or a drain terminal of the first transistor.
    Type: Application
    Filed: February 1, 2024
    Publication date: May 30, 2024
    Inventors: Wei-An LAI, Shih-Wei PENG, Wei-Cheng LIN, Jiann-Tyng TZENG
  • Publication number: 20240178139
    Abstract: Apparatus and methods for generating a physical layout for a high density routing circuit are disclosed. An exemplary semiconductor structure includes: a gate structure; a plurality of first metal lines formed in a first dielectric layer below the gate structure; at least one first via formed in a second dielectric layer between the gate structure and the first dielectric layer; a plurality of second metal lines formed in a third dielectric layer over the gate structure; and at least one second via formed in a fourth dielectric layer between the gate structure and the third dielectric layer. Each of the at least one first via is electrically connected to the gate structure and a corresponding one of the plurality of first metal lines. Each of the at least one second via is electrically connected to the gate structure and a corresponding one of the plurality of second metal lines.
    Type: Application
    Filed: February 8, 2024
    Publication date: May 30, 2024
    Inventors: Wei-An LAI, Shih-Wei PENG, Wei-Cheng LIN, Jiann-Tyng TZENG
  • Patent number: 11993782
    Abstract: Provided is a lentivirus packaging system, which comprises: a transfer plasmid comprising a nucleotide sequence of TAR-reserved-chimeric 5? long terminal repeat (LTR); at least one packaging plasmid comprising a nucleotide sequence encoding TAR RNA binding protein, a nucleotide sequence of rev gene, a nucleotide sequence of gag gene, and a nucleotide sequence of pol gene; and an envelope plasmid. Due to the expression of gene of TAR RNA binding protein by the packaging plasmids, the produced lentivirus has higher virus titer and can improve the transduction rate and the gene delivery efficiency during cell transduction. The present invention further provides a method of improving lentivirus production in a host cell, which comprises using the lentivirus packaging system to transfect the host cell. The present invention further provides a cell transduced by the lentivirus and a method of using the cell for treating cancer.
    Type: Grant
    Filed: July 16, 2021
    Date of Patent: May 28, 2024
    Assignee: PELL BIO-MED TECHNOLOGY CO., LTD.
    Inventors: Wei-Chi Lin, Ssu-Yu Chou, Yao-Cheng Yang, Chien-Ting Lin, Chen-Lung Lin
  • Patent number: 11996481
    Abstract: A semiconductor device includes a semiconductor layer. A gate structure is disposed over the semiconductor layer. A spacer is disposed on a sidewall of the gate structure. A height of the spacer is greater than a height of the gate structure. A liner is disposed on the gate structure and on the spacer. The spacer and the liner have different material compositions.
    Type: Grant
    Filed: May 17, 2021
    Date of Patent: May 28, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Huan-Chieh Su, Chih-Hao Wang, Kuo-Cheng Chiang, Wei-Hao Wu, Zhi-Chang Lin, Jia-Ni Yu, Yu-Ming Lin, Chung-Wei Hsu
  • Publication number: 20240170551
    Abstract: A semiconductor device includes a semiconductor substrate, a control gate, a select gate, a charge trapping structure, a dielectric structure, and a spacer. The control gate and the select gate are over a channel region of the semiconductor substrate and separated from each other. The charge trapping structure is between the control gate and the semiconductor substrate. The dielectric structure is between the select gate and the semiconductor substrate. The dielectric structure has a first part and a second part, the first part is between the charge trapping structure and the second part, and the second part is thicker than the first part. The select gate is between the spacer and the control gate, and the select gate is separated from the spacer by the second part of the dielectric structure.
    Type: Application
    Filed: February 1, 2024
    Publication date: May 23, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Meng-Han LIN, Wei-Cheng WU, Te-Hsin CHIU
  • Patent number: 11990477
    Abstract: In one embodiment, an integrated circuit cell includes a first circuit component and a second circuit component. The first circuit component includes fin field-effect transistors (finFETs) formed in a high fin portion of the integrated circuit cell, the high fin portion of the integrated circuit including a plurality of fin structures arranged in rows. The second circuit component that includes finFETs formed in a less fin portion of the integrated circuit cell, the less fin portion of the integrated circuit including a lesser number of fin structures than the high fin portion of the integrated circuit cell.
    Type: Grant
    Filed: September 24, 2020
    Date of Patent: May 21, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Wei-An Lai, Hui-Zhong Zhuang, Jiann-Tyng Tzeng, Wei-Cheng Lin, Lipen Yuan, Yan-Hao Chen
  • Patent number: 11982866
    Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.
    Type: Grant
    Filed: December 15, 2022
    Date of Patent: May 14, 2024
    Assignee: TDK TAIWAN CORP.
    Inventors: Chao-Chang Hu, Liang-Ting Ho, Chen-Er Hsu, Yi-Liang Chan, Fu-Lai Tseng, Fu-Yuan Wu, Chen-Chi Kuo, Ying-Jen Wang, Wei-Han Hsia, Yi-Hsin Tseng, Wen-Chang Lin, Chun-Chia Liao, Shou-Jen Liu, Chao-Chun Chang, Yi-Chieh Lin, Shang-Yu Hsu, Yu-Huai Liao, Shih-Wei Hung, Sin-Hong Lin, Kun-Shih Lin, Yu-Cheng Lin, Wen-Yen Huang, Wei-Jhe Shen, Chih-Shiang Wu, Sin-Jhong Song, Che-Hsiang Chiu, Sheng-Chang Lin
  • Patent number: 11984443
    Abstract: An integrated circuit includes a first pair of power rails and a second pair of power rails that are disposed in a first layer, conductive lines disposed in a second layer above the first layer, and a first active area disposed in a third layer above the second layer. The first active area is arranged to overlap the first pair of power rails. The first active area is coupled to the first pair of power rails through a first line of the conductive lines and a first group of vias, and the first active area is coupled to the second pair of power rails through at least one second line of the conductive lines and a second group of vias different from the first group of vias.
    Type: Grant
    Filed: August 8, 2022
    Date of Patent: May 14, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kam-Tou Sio, Jiann-Tyng Tzeng, Wei-Cheng Lin
  • Publication number: 20240148301
    Abstract: The present invention provides a smart wearable device, which is held on an upper body of a wearer by a plurality of contact pad sets, and has a connection unit, a first sensing module, a second sensing module, and an extension unit.
    Type: Application
    Filed: November 7, 2022
    Publication date: May 9, 2024
    Inventors: Chien-Hsiang Chang, Yang-Cheng Lin, Wei-Chih Lien, Tseng-Ping Chiu, Pei-Yun Wu, Bo Liu
  • Publication number: 20240152880
    Abstract: A multi-channel payment method for a multi-channel payment system comprises the payer or the payee who initiated the payment request logs in to the multi-channel payment system; the payer or the payee who initiated the payment request placing an order in the multi-channel payment system, wherein the order comprises a designated payment gateway; the multi-channel payment system determining a predicted fee of the order according to the designated payment gateway, past order records, and a real-time exchange rate; the multi-channel payment system performing an anti-money laundering verification of the order; the payer reviewing the order and the predicted fee through a multiple auditing method; and the multi-channel payment system executing payment from the payer to the payee according to the order and the designated payment gateway, and storing a payment detail of the order.
    Type: Application
    Filed: February 13, 2023
    Publication date: May 9, 2024
    Applicant: OBOOK INC.
    Inventors: Chun-Kai Wang, Chung-Han Hsieh, Chun-Jen Chen, Po-Hua Lin, Wei-Te Lin, Pei-Hsuan Weng, Mei-Su Wang, I-Cheng Lin, Cheng-Wei Chen
  • Patent number: 11978740
    Abstract: A layer stack including a first bonding dielectric material layer, a dielectric metal oxide layer, and a second bonding dielectric material layer is formed over a top surface of a substrate including a substrate semiconductor layer. A conductive material layer is formed by depositing a conductive material over the second bonding dielectric material layer. The substrate semiconductor layer is thinned by removing portions of the substrate semiconductor layer that are distal from the layer stack, whereby a remaining portion of the substrate semiconductor layer includes a top semiconductor layer. A semiconductor device may be formed on the top semiconductor layer.
    Type: Grant
    Filed: February 17, 2022
    Date of Patent: May 7, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Harry-Hak-Lay Chuang, Kuo-Ching Huang, Wei-Cheng Wu, Hsin Fu Lin, Henry Wang, Chien Hung Liu, Tsung-Hao Yeh, Hsien Jung Chen
  • Patent number: 11976374
    Abstract: A method and device of removing and recycling metals from a mixing acid solution, includes adsorbing a mixing acid solution with a pH value of ?1 to 4 and a cobalt ion concentration of 100 to 1,000 mg/L by at least two cation resins in series setting to the cobalt ion concentration in the mixing acid solution is less than 10 mg/L, and then adjusting the pH value of the mixing acid solution after adsorption to meet a discharge standard, wherein the particle size of the at least two cation resins in series setting is 150˜1,200 ?m. After the cation resins are saturated by adsorption, regenerating the cation resins by sulfuric acid to form a cobalt sulfate solution, and then electrolytically treating the cobalt sulfate solution to obtain electrolytic cobalt and sulfuric acid electrolyte. The operation process is simple without complicated equipment, and it can effectively recycle metals from mixing acid solutions.
    Type: Grant
    Filed: September 10, 2020
    Date of Patent: May 7, 2024
    Assignee: MEGA UNION TECHNOLOGY INCORPORATED
    Inventors: Kuo-Ching Lin, Yung-Cheng Chiang, Shr-Han Shiu, Wei-Rong Tey, Yu-Hsuan Li
  • Patent number: 11978678
    Abstract: A display device includes a first substrate, a light-emitting element, a light conversion layer, and a color filter layer. The light-emitting element is disposed on the first substrate. The light conversion layer is disposed on the light-emitting element. In addition, the color filter layer is overlapped the light-emitting element and the light conversion layer.
    Type: Grant
    Filed: August 5, 2022
    Date of Patent: May 7, 2024
    Assignee: INNOLUX CORPORATION
    Inventors: Tung-Kai Liu, Tsau-Hua Hsieh, Wei-Cheng Chu, Chun-Hsien Lin, Chandra Lius, Ting-Kai Hung, Kuan-Feng Lee, Ming-Chang Lin, Tzu-Min Yan, Hui-Chieh Wang
  • Publication number: 20240146286
    Abstract: An integrated circuit includes a first inverter, a first transmission gate, and a second inverter constructed with wide type-one transistors and wide type-two transistors. The integrated circuit also includes a first clocked inverter and a second clocked inverter constructed with narrow type-one transistors and narrow type-two transistors. A master latch is formed with the first inverter and the first clocked inverter. A slave latch is formed with the second inverter and the second clocked inverter. The first transmission gate is coupled between the master latch and the slave latch. The wide type-one transistors are formed in a wide type-one active-region structure and the narrow type-one transistors are formed in a narrow type-one active-region structure. The wide type-two transistors are formed in a wide type-two active-region structure and the narrow type-two transistors are formed in in a narrow type-two active-region structure.
    Type: Application
    Filed: January 27, 2023
    Publication date: May 2, 2024
    Inventors: Ching-Yu HUANG, Jiann-Tyng TZENG, Wei-Cheng LIN
  • Publication number: 20240144467
    Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.
    Type: Application
    Filed: January 8, 2024
    Publication date: May 2, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chien-Huei Chen, Pei-Chao Su, Xiaomeng Chen, Chan-Ming Chang, Shih-Yung Chen, Hung-Yi Chung, Kuang-Shing Chen, Li-Jou Lee, Yung-Cheng Lin, Wei-Chen Wu, Shih-Chang Wang, Chien-An Lin
  • Patent number: 11974083
    Abstract: An electronic device including a protection layer, a display panel, and a sound broadcasting element is provided. The protection layer has an inner surface and a side surface directly connected to the inner surface. The display panel is disposed on the inner surface of the protection layer and has a back surface and a side surface directly connected to the back surface. The sound broadcasting element is located adjacent to the side surface of the display panel, and the sound broadcasting element includes a piezoelectric component and a connection component.
    Type: Grant
    Filed: January 12, 2023
    Date of Patent: April 30, 2024
    Assignee: Innolux Corporation
    Inventors: Tzu-Pin Hsiao, Wei-Cheng Lee, Jiunn-Shyong Lin, I-An Yao
  • Patent number: 11973117
    Abstract: Methods of forming contacts for source/drain regions and a contact plug for a gate stack of a finFET device are disclosed herein. Methods include etching a contact opening through a dielectric layer to expose surfaces of a first source/drain contact and repairing silicon oxide structures along sidewall surfaces of the contact opening and along planar surfaces of the dielectric layer to prevent selective loss defects from occurring during a subsequent selective deposition of conductive fill materials and during subsequent etching of other contact openings. The methods further include performing a selective bottom-up deposition of conductive fill material to form a second source/drain contact. According to some of the methods, once the second source/drain contact has been formed, the contact plug may be formed over the gate stack.
    Type: Grant
    Filed: August 3, 2021
    Date of Patent: April 30, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Hsien Huang, Chang-Ting Chung, Wei-Cheng Lin, Wei-Jung Lin, Chih-Wei Chang